Datasheet BU2508DW Datasheet (Philips)

Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DW

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f

PINNING - SOT429 PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 1500 V Collector-emitter voltage (open base) - 700 V Collector current (DC) - 8 A Collector current peak value - 15 A Total power dissipation Tmb 25 ˚C - 125 W Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - 1.0 V Collector saturation current f=16kHz 4.5 - A Diode forward voltage IF = 4.5 A 1.6 2.0 V Fall time I
= 4.5 A; f=16kHz 0.4 0.6 µs
Csat
PIN DESCRIPTION
c
1 base 2 collector
b
3 emitter
tab collector
2
1
3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V Collector-emitter voltage (open base) - 700 V Collector current (DC) - 8 A Collector current peak value - 15 A Base current (DC) - 4 A Base current peak value - 6 A Reverse base current average over any 20 ms period - 100 mA Reverse base current peak value
1
Total power dissipation Tmb 25 ˚C - 125 W Storage temperature -65 150 ˚C Junction temperature - 150 ˚C

THERMAL RESISTANCES

Rbe
e
-5A
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - - 1.0 K/W Junction to ambient in free air 45 - K/W
September 1997 1 Rev 1.100
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DW

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified
I
CES
I
CES
I
EBO
BV R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A 140 - 390 mA Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V Base-emitter resistance VEB = 7.5 V - 33 - Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - - 1.0 V Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 V DC current gain IC = 1 A; VCE = 5 V - 13 -
Diode forward voltage IF = 4.5 A - 1.6 2.0 V

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified
C
c
t
s
t
f
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF Switching times (16 kHz line I
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs) Turn-off storage time 5.0 6.0 µs Turn-off fall time 0.4 0.6 µs
Switching times (38 kHz line I deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs) Turn-off storage time 4.7 5.7 µs Turn-off fall time 0.25 0.35 µs
2
VBE = 0 V; VCE = V VBE = 0 V; VCE = V Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 4.5 A; VCE = 1 V 4 5.5 7.0
= 4.5 A; I
Csat
= 4.0 A; I
Csat
= 1.1 A; LB = 6 µH;
B(end)
= 0.9 A; LB = 6 µH;
B(end)
VCE
TRANSISTOR
IC
IB
DIODE
26us20us
64us
ICsat
IBend
t
t
t
IC
IB
ts
IBend
ICsat
90 %
10 %
tf
t
t
- IBM
Fig.1. Switching times waveforms. Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DW
IBend
LB
D.U.T.
-VBB
Fig.3. Switching times test circuit
h
FE
100
Tj = 25 C Tj = 125 C
10
Rbe
1V
+ 150 v nominal adjust for ICsat
1mH
12nF
.
BU2508D
5V
VCESAT / V BU2508D
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 0
0.1 1 10
Tj = 25 C Tj = 125 C
IC/IB=
5 4 3
IC / A
Fig.6. Typical collector-emitter saturation voltage.
1.2
1.1
1
0.9
0.8
0.7
VCEsat = f (IC); parameter IC/I
VBESAT / V
Tj = 25 C Tj = 125 C
B
BU2508D
IC=
6A
4.5A 3A 2A
1
0.01 1
0.1 10 IC / A
Fig.4. Typical DC current gain. hFE = f (IC)
parameter V
VBESAT / V BU2508D
1.2
1.1 1
0.9
0.8
0.7
0.6
0.5
0.4
0.1 1 10
Tj = 25 C Tj = 125 C
CE
IC/IB=
3 4 5
IC / A
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/I
B
0.6 0 1 2 3 4
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
VCESAT / V BU2508D
10
6A
1
IC=2A
0.1
0.1 1 10
4.5A
3A
IB / A
C
Tj = 25 C
Tj = 25 C Tj = 125 C
Tj = 125 C
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter I
C
September 1997 3 Rev 1.100
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DW
Eoff / uJ BU2508D
1000
IC = 4.5A
3.5A
100
10
0.1 1 10 IB / A
Fig.9. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 16 kHz
ts, tf / us BU2508D
12 11 10
ts
9 8 7 6
3.5A
IC =
4.5A
tf
5 4 3 2 1 0
0.1 1 10 IB / A
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
Zth / (K/W)
10
1
0.5
0.2
0.1
0.1
0.05
0.02
D = 0
0.01 1E-06 1E-04 1E-02 1E+00
t / s
t
p
P
D
D =
T
Fig.11. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
PD%
120 110 100
90 80 70 60 50 40 30 20 10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
Fig.12. Normalised power dissipation.
PD% = 100⋅PD/P
D 25˚C
= f (Tmb)
t
p
T
t
September 1997 4 Rev 1.100
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DW
IC / A
100
= 0.01
10
ICM max
IC max
(1)
II
tp = 5 us
10
20
I
1
(2)
0.1
50 100 200
500 1 ms
2 5
10 20
DC
0.01 1
10
100
1000
VCE / V
Fig.13. Forward bias safe operating area. Tmb = 25˚C
(1)
P
max line.
tot
(2)
Second-breakdown limits (independent of temperature).
I
Region of DC operation.
II
Extension for repetitive pulse operation.
September 1997 5 Rev 1.100
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DW

MECHANICAL DATA

Dimensions in mm Net Mass: 5 g
21
max
15.5 min
3.5
4.0 max
2.2 max
3.2 max
16 max
5.3
15.5 max
1
2
5.45
3
1.1
5.45
7.3
seating
0.4
5.3 max
1.8 o
plane
2.5
0.9 max
M
Fig.14. SOT429; pin 2 connected to mounting base.
3.5 max
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
September 1997 6 Rev 1.100
Page 7
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508DW

DEFINITIONS

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997 7 Rev 1.100
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