Datasheet BU2508D Datasheet (Philips)

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508D

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
V
I
I
P
V
V
I
V
t

C
CM

Csat

f

CESM
CEO

tot
CEsat
CEsat

F

Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.29 A - 1.0 V
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 5.0 V
Collector saturation current 4.5 - A
Diode forward voltage IF = 4.5 A 1.6 2.0 V
Fall time ICM = 4.5 A; I

= 1.1 A 0.4 0.6 µs

B(end)

PINNING - SOT93 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

tab

1 base
2 collector

c

b

3 emitter

tab collector

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

I

B

I

BM

-I

B(AV)

-I

BM

P

tot

T

stg

T

j

Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current average over any 20 ms period - 100 mA
Reverse base current peak value

1

Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C

Rbe

e

-5A

1 Turn-off current.

December 1995 1 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508D

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

CES

I

EBO

BV

EBO

R

be

V

CEOsust

V

CEsat

V

CEsat

V

BEsat

h

FE

h

FE

V

F

Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W

Collector cut-off current

2

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

Emitter cut-off current VEB = 7.5 V; IC = 0 A 140 - 390 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V - 33 - Ω
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V

L = 25 mH

Collector-emitter saturation voltages IC = 4.5 A; IB = 1.1 A - - 5.0 V

IC = 4.5 A; IB = 1.29 A - - 1.0 V
Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.3 V
DC current gain IC = 1 A; VCE = 5 V 7 13 23

IC = 4.5 A; VCE = 1 V 4 5.5 7.5
Diode forward voltage IF = 4.5 A - 1.6 2.0 V

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

C

c

t

s

t

f

t

s

t

f

Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line ICM = 4.5 A; I

deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)

= 1.1 A; LB = 6 µH;

B(end)

Turn-off storage time 5.0 6.0 µs
Turn-off fall time 0.4 0.6 µs

Switching times (38 kHz line ICM = 4.0 A; I
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)

= 0.9 A; LB = 6 µH;

B(end)

Turn-off storage time 4.7 5.7 µs
Turn-off fall time 0.25 0.35 µs

2 Measured with half sine-wave voltage (curve tracer).

December 1995 2 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508D

TRANSISTOR

IC

IB

VCE

DIODE

26us20us

64us

Fig.1. Switching times waveforms.

90 %

IC

10 %

IB

ts

IBend

tf

Fig.2. Switching times definitions.

ICM

IBend

- IBM

ICM

h

FE

100

t

t

10

Tj = 25 C
Tj = 125 C

BU2508D

5V

1V

1

t

0.01 1

0.1 10
IC / A

Fig.4. Typical DC current gain. hFE = f (IC)

parameter V

VBESAT / V BU2508D

1.2

1.1
1

0.9

t

t

0.8

0.7

0.6

0.5

0.4

0.1 1 10

Tj = 25 C
Tj = 125 C

CE

IC/IB=

3
4
5

IC / A

Fig.5. Typical base-emitter saturation voltage.

VBEsat = f (IC); parameter IC/I

B

VCESAT / V BU2508D

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

0.1 1 10

Tj = 25 C
Tj = 125 C

IC/IB=

5
4
3

IC / A

VCEsat = f (IC); parameter IC/I

B

IBend

LB

D.U.T.

-VBB

Fig.3. Switching times test circuit

+ 150 v nominal
adjust for ICM

Rbe

1mH

12nF

.

Fig.6. Typical collector-emitter saturation voltage.

December 1995 3 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508D

VBESAT / V

1.2

1.1

1

0.9

0.8

0.7

0.6
0 1 2 3 4

Tj = 25 C
Tj = 125 C

IB / A

BU2508D

IC=

6A

4.5A
3A
2A

Fig.7. Typical base-emitter saturation voltage.

VBEsat = f (IB); parameter I

VCESAT / V BU2508D

10

6A

1

IC=2A

0.1

0.1 1 10

4.5A

3A

IB / A

C

Tj = 25 C

Tj = 25 C
Tj = 125 C

Tj = 125 C

Fig.8. Typical collector-emitter saturation voltage.

VCEsat = f (IB); parameter I

C

ts, tf / us BU2508D

12
11
10

ts

9
8
7
6

3.5A

IC =

4.5A

tf

5
4
3
2
1
0

0.1 1 10
IB / A

Fig.10. Typical collector storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz

Zth / (K/W)

10

1

0.5

0.2

0.1

0.1

0.05

0.02

D = 0

0.01
1E-06 1E-04 1E-02 1E+00

t / s

t

p

P

D

t

p

D =

T

T

t

Fig.11. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

Eoff / uJ BU2508D

1000

IC = 4.5A

3.5A

100

10

0.1 1 10
IB / A

Fig.9. Typical turn-off losses. Tj = 85˚C

Eoff = f (IB); parameter IC; f = 16 kHz

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Fig.12. Normalised power dissipation.

PD% = 100⋅PD/P

Normalised Power Derating

Tmb / C

= f (Tmb)

D 25˚C

December 1995 4 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508D

IC / A

100

= 0.01

10

ICM max

IC max

(1)

II

tp =
5 us

10

20

I

1

(2)

0.1

50
100
200

500
1 ms

2
5

10
20

DC

0.01
1

10

100

1000

VCE / V

Fig.13. Forward bias safe operating area. Tmb = 25˚C

(1)

P

max line.

tot

(2)

Second-breakdown limits
(independent of temperature).

I

Region of DC operation.

II

Extension for repetitive pulse operation.

December 1995 5 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508D

MECHANICAL DATA

Dimensions in mm
Net Mass: 5 g

2 max

2.2 max

dimensions within
this zone are
uncontrolled

15.2
max

14

13.6

4.25

4.15

0.5
min

123

4.6

max

2

4.4

21

max

12.7
max

13.6
min

Fig.14. SOT93; pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT93 envelope.

2. Epoxy meets UL94 V0 at 1/8".

5.5

11

1.15

0.95

0.5

M

0.4

1.6

December 1995 6 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508D

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

December 1995 7 Rev 1.200