Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to
base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - 1.0 V
Collector saturation current f=16kHz 4.5 - A
Fall time I
= 4.5 A;f=16kHz 0.4 0.6 µs
Csat
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current average over any 20 ms period - 100 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
2
1
3
e
-5A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
September 1997 1 Rev 1.100
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
CEOsust
V
CEsat
V
BEsat
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - - 1.0 V
Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 V
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
h
FE
h
FE
DC current gain IC = 100 mA;VCE = 5 V - 13 -
IC = 4.5 A;VCE = 1 V 4 5.5 7.0
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line I
= 4.5 A; I
Csat
= 1.1 A; LB = 6 µH;
B(end)
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
Turn-off storage time 5.0 6.0 µs
Turn-off fall time 0.4 0.6 µs
Switching times (38 kHz line I
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
= 4.0 A; I
Csat
= 0.9 A; LB = 6 µH;
B(end)
Turn-off storage time 4.7 5.7 µs
Turn-off fall time 0.25 0.35 µs
100-200R
+ 50v
Horizontal
Oscilloscope
Vertical
IC / mA
250
200
100
100R
30-60 Hz
6V
Fig.1. Test circuit for V
2 Measured with half sine-wave voltage (curve tracer).
1R
sust. Fig.2. Oscilloscope display for V
CEO
0
VCE / V
min
VCEOsust
sust.
CEO
September 1997 2 Rev 1.100
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AW
h
BU2508A
IC
DIODE
ICsat
t
100
FE
5V
IB
26us20us
64us
VCE
Fig.3. Switching times waveforms.
IC
10 %
IB
ts
IBend
tf
Fig.4. Switching times definitions.
ICsat
90 %
IBend
- IBM
t
t
10
1V
Tj = 25 C
Tj = 125 C
1
0.01 1
0.1 10
IC / A
Fig.6. Typical DC current gain. hFE = f (IC)
parameter V
VBESAT / V BU2508A
1.2
1.1
1
0.9
0.8
t
0.7
0.6
t
0.5
0.4
0.1 1 10
Tj = 25 C
Tj = 125 C
CE
IC/IB=
3
4
5
IC / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/I
B
IBend
-VBB
LB
BU2508A
+ 150 v nominal
adjust for ICsat
1mH
12nF
BY228
VCESAT / V BU2508A
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
5
4
3
0.3
0.2
0.1
0
0.1 1 10
IC / A
Fig.5. Switching times test circuit
(BU2508A).
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/I
B
September 1997 3 Rev 1.100
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AW
VBESAT / V BU2508A
1.2
1.1
1
0.9
0.8
0.7
0.6
0 1 2 3 4
Tj = 25 C
Tj = 125 C
IB / A
IC=
6A
4.5A
3A
2A
Fig.9. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
VCESAT / V BU2508A
10
6A
1
IC=2A
0.1
0.1 1 10
4.5A
3A
IB / A
C
Tj = 25 C
Tj = 125 C
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter I
C
ts, tf / us BU2508A
12
11
10
ts
9
8
7
6
5
4
3
2
1
0
0.1 1 10
3.5A
IC =
4.5A
tf
IB / A
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
Zth / (K/W)
10
1
0.5
0.2
0.1
0.1
0.05
0.02
D = 0
0.01
1E-06 1E-04 1E-02 1E+00
t / s
t
p
P
D
t
p
D =
T
T
t
Fig.13. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
Eoff / uJ BU2508A
1000
IC = 4.5A
3.5A
100
10
0.1 1 10
IB / A
Fig.11. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 16 kHz
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Fig.14. Normalised power dissipation.
PD% = 100⋅PD/P
Normalised Power Derating
Tmb / C
= f (Tmb)
D 25˚C
September 1997 4 Rev 1.100
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AW
IC / A
100
= 0.01
10
ICM max
IC max
(1)
II
tp =
5 us
10
20
I
1
(2)
0.1
50
100
200
500
1 ms
2
5
10
20
DC
0.01
1
10
100
1000
VCE / V
Fig.15. Forward bias safe operating area. Tmb = 25˚C
(1)
P
max line.
tot
(2)
Second-breakdown limits
(independent of temperature).
I
Region of DC operation.
II
Extension for repetitive pulse operation.
September 1997 5 Rev 1.100
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AW
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
21
max
15.5
min
3.5
4.0
max
2.2 max
3.2 max
16 max
5.3
15.5
max
1
2
5.45
3
1.1
5.45
7.3
seating
plane
0.4
5.3 max
1.8
o
2.5
0.9 max
M
Fig.16. SOT429; pin 2 connected to mounting base.
3.5
max
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
September 1997 6 Rev 1.100
Page 7
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AW
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 7 Rev 1.100
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