Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT199 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 4 A; IB = 0.8 A - 5.0 V
Collector saturation current f = 16kHz 4 - A
Diode forward voltage IF = 4 A 1.7 2.0 V
Fall time I
= 4 A; f = 16kHz 0.25 0.5 µs
Csat
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current average over any 20 ms period - 100 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
Rbe
e
-5A
1 Turn-off current.
September 1997 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507DF
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
V
CEOsust
I
EBO
BV
EBO
R
be
V
CEsat
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
Emitter cut-off current VEB = 7.5 V; IC = 0 A - 160 - mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V - 45 - Ω
Collector-emitter saturation voltages IC = 4 A; IB = 0.8 A - - 5 V
V
h
h
V
BEsat
FE
FE
F
Base-emitter saturation voltage IC = 4 A; IB = 0.8 A - - 1.1 V
DC current gain IC = 1 A; VCE = 5 V - 14 -
IC = 4 A; VCE = 5 V 5 7 9
Diode forward voltage IF = 4 A - 1.7 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
2 Measured with half sine-wave voltage (curve tracer).
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 68 - pF
Switching times (16 kHz line I
deflection circuit) -VBB = 4 V
= 4 A; I
Csat
= 0.7 A; LB = 6 µH;
B(end)
Turn-off storage time 5.0 6.0 µs
Turn-off fall time 0.25 0.5 µs
September 1997 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507DF
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.1. Switching times waveforms.
90 %
IC
10 %
IB
ts
IBend
tf
ICsat
ICsat
IBend
hFE
100
VCE = 1 V
t
t
t
10
1
0.01 0.1 1 10
BU2507DF/X
Ths = 25 C
Ths = 85 C
IC / A
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE
100
VCE = 5 V
t
10
BU2507DF/X
Ths = 25 C
Ths = 85 C
Fig.2. Switching times definitions.
IBend
-VBB
LB
D.U.T.
Fig.3. Switching times test circuit
+ 150 v nominal
adjust for ICsat
Rbe
- IBM
1mH
12nF
t
1
0.01 0.1
1
IC / A
10
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
VCESAT / V
10
Ths = 25 C
Ths = 85 C
1
0.1
0.01
0.1 1 10 100
.
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/I
BU2507DF/X
IC/IB = 3
IC/IB = 4
IC/IB = 5
IC / A
B
September 1997 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507DF
1.2
1.1
1
0.9
0.8
0.7
0.6
0 0.5 1 1.5 2
BU2507DF/DXVBEsat / V
Ths = 25 C
Ths = 85 C
IC = 4 A
IC = 3 A
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
Ptot / W
10
1
0.1
0 0.5 1 1.5 2
IB / A
C
BU2507AF/DF/AX/DX
Ths = 25 C
Ths = 85 C
Fig.8. Typical losses.
P
= f (IB); IC = 4 A; f = 16 kHz
TOT
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/P
Zth / K/W
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
D = 0
0.001
1E-06 1E-4 10E-2 1E+00
D 25˚C
t / s
= f (Tmb)
BU2507AF/X/DF/X
t
p
P
D
T
Fig.11. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
D =
t
p
T
t
ts/tf/ us
10
8
6
4
2
0
0 0.5 1 1.5 2
BU2507AF/AX/Df/DX85ts/tf
IB / A
Fig.9. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); IC = 4.0 A; Tj = 85˚C; f = 16 kHz
September 1997 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507DF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
21.5
max
15.7
0.7
3.5
7.3
15.3 max
3.1
3.3
6.2
5.8
5.2 max
3.2
o
45
seating
plane
3.5 max
not tinned
min
12
2.1 max
5.45
Fig.12. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
3
1.2
1.0
5.45
0.4
M
0.7 max
2.0
September 1997 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507DF
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 6 Rev 1.200
Loading...