Page 1
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
SILICON THYRISTORS
The BTX18 series is a range of p-gate reverse blocking thyristors, in a
TO-39 metal enveloppe, intended for use in general low power
applications up to a A average on-state current.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Anode to Cathode - Ratings
Voltage 1)
Symbol Ratings
V
R
V
RWM
V
RRM
V
RSM
V
DWM
V
D
V
DRM
V
DSM
Currents
Continuous Reverse Voltage 100 200
Crest Working Reverse Voltage 100 200
Repetitive Peak Reverse Voltage
(δ = 0.01 ; f=50Hz)
Non-repetitive peak reverse voltage
(t<10ms)
Crest Working off-state Voltage 100 200
Continuous off-state Voltage 100 200
Repetitive peak off-state voltage
(δ = 0.01 ; f=50Hz)
Non-repetitive peak off-state voltage
(t<10ms)
Symbol Ratings
Average on-state current
I
T(AV)
I
T
I
T(RMS)
(averaged over any 20
ms period)
On-state Current (D.C.)
T
=100°C
CASE
RMS on-state Current
T
CASE
T
=60°C, in
AMB
free air
=105°C
BTX18-
100
BTX18-
120 240
120 240
120 240
120 240
BTX18-
100
BTX18-
200
BTX18-
300
BTX18-
400
BTX18-
300 400 500 V
300 400 500 V
350 500 600 V
350 500 600 V
300 400 500 V
300 400 500 V
350 500 600 V²)
350 500 600 V²)
200
BTX18-
300
BTX18-
400
BTX18-
Max : 1.0 A
Max : 250 mA
Max : 1.6 A
Max : 1.6 A
500
500
COMSET SEMICONDUCTORS 1/4
Page 2
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
Symbol Ratings
I
TRM
I
TSM
T
T
J
stg
Repetitive Peak on-state Current
Non-repetitive peak on-state current
t=10ms ; T
=125°C prior to surge
J
Junction Temperature
Storage Temperature
BTX18-
100
BTX18-
200
BTX18-
Max : 10 A
Max : 125°C
-55 to +125°C
300
BTX18-
400
BTX18-
500
10 A V
1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a
resistor R<1 kΩ is connected between gate and cathode
2) The device is not suitable for operation in the forward breakover mode.
Gate to Cathode - Ratings
With 1
V
V
resistor between gate and cathode
ΩΩΩΩ
Symbol Ratings
FGM
RGM
Forward Peak Voltage
Reverse Peak Voltage
BTX18
-100
BTX18
-200
BTX18
-300
Max : 10 V
Max : 5 V
BTX18
-400
BTX18
-500
°C
V
V
I
FGM
P
P
G(AV)
GM
Forward Peak Current
Average Power Dissipation (averaged over
any 20 ms period)
Peak Power Dissipation
Temperatures
Symbol Ratings
R
R
Z
th j-c
th j-a
th j-c
From Junction to Case 10 °C/W
From Junction to Ambient 200 °C/W
Transient Thermal Resistance (t=10 ms) 2.5 °C/W
Anode to Cathode - Characteristics
Symbol Ratings
V
T
On State Voltage
I
=1.0 A, Tj=25°C
T
Max : 0.2
Max : 0.05
Max : 0.5
BTX18
-100
BTX18
-100
< 1.5 1.5 1.5 1.5 1.5 V
BTX18
-200
BTX18
-200
BTX18
-300
BTX18
-300
BTX18
-400
BTX18
-400
BTX18
-500
BTX18
-500
W
W
A
1
)
COMSET SEMICONDUCTORS 2/4
Page 3
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
Symbol Ratings
I
RM
I
DM
I
L
I
H
Peak Reverse Current
V
RM=VRWmax
; Tj=125°C
Peak off-state Current
V
DM=VDWmax
; Tj=125°C
Latching current, Tj=125°C Typ : 10 mA
Holding Current ; Tj=25°C < 5.0 ²) mA
Gate to Cathode – Characteristics
Symbol Ratings
V
GT
V
GD
I
GT
Voltage that will trigger all devices
T
=25°C
j
Voltage that will not trigger any device
T
=125°C
j
Current that vill trigger all devices
=25°C
T
j
Switching Characteristics
Symbol Ratings
BTX18
-100
< 800 400 275 200 160
< 800 400 275 200 160
BTX18
-100
BTX18
-200
BTX18
-200
BTX18
-300
BTX18
-300
BTX18
-400
BTX18
-400
BTX18
-500
BTX18
-500
µ
A
µ
A
>2.0V
< 200 mV
>5.0mA
BTX18
-100
BTX18
-200
BTX18
-300
BTX18
-400
BTX18
-500
Turn off time when switched from
IT=300 mA to IR=175 mA
Peak off-state Current
V
DM=VDWmax
; Tj=125°C
1)
I
DM
V
is measured along the leads at 1 cm from the case
T
Tj=25°C Type : 20
=125°C
T
j
2) Measurer under the following conditiond :
Anode sypply voltage= +6.0V
Initial on-state current after gate triggering= 50mA
The current is reduced until the device turns of.
t
q
Typ : 35
< 800 400 275 200 160
µ
s
µ
s
COMSET SEMICONDUCTORS 3/4
Page 4
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
MECHANICAL DATA CASE TO-39
DIMENSIONS
mm inches
A 6,71 0,26
B 13,2 0,51
C 9,23 0,36
D 8,34 0,32
E 0,8 0,03
F 0,8 0,03
G 0,42 0,016
H 45°
L 4,97 0,2
Pin 1 : Kathode
Pin 2 : Gate
Pin 3 : Anode
COMSET SEMICONDUCTORS 4/4
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