Page 1
FEATURES
.HIGHSURGECAPABILITY
.HIGH ON-STATECURRENT
.HIGH STABILITYAND RELIABILITY
.ISOLATEDPACKAGE:
INSULATEDVOLTAGE= 2500V
(ULRECOGNIZED: E81734)
DESCRIPTION
The BTW 66 and BTW 67 Family Silicon Controlled
Rectifiers are high performance glass passivated
chips technology.
This general purpose Family Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
(RMS)
BTW 6 6
BTW 6 7
SCR
A
G
K
RD 91
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
TSM
I2tI
dI/dt Critical rate of rise of on-state current
Tstg
Tj
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
Symbol Parameter BTW 66- / BTW 67- Unit
RMS on-state current
(180° conduction angle)
Average on-state current (180° conduction
angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C)
2
t value BTW 66
Gate supply : IG= 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range - 40 to + 150
from case
BTW 66
BTW 67
BTW 66
BTW 67
BTW 66
BTW 67
BTW 66
BTW 67
BTW 67
Tc=75°C
Tc=75°C
Tc=75°C
Tc=75°C
tp=8.3 ms 420
tp=10 ms 400
tp=10 ms 800
30
40
20
25
525
500
1250
100 A/µs
- 40 to + 125
230 °C
A
A
A
A2s
°C
°C
V
DRM
V
RRM
March 1995
Repetitive peak off-state voltage
Tj = 125 °C
200 400 600 800 1000 1200
200 400 600 800 1000 1200 V
1/6
Page 2
BTW 66 / BTW 67
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (c-h) Contact (case to heatsink) 0.10 °C/W
Rth (j-c) DC Junction to case for DC BTW 66 1.2 °C/W
BTW 67 1.0
GATECHARACTERISTICS (maximumvalues)
P
ELECTRICAL CHARACTERISTICS
=1W PGM= 40W (tp = 20 µs) I
G (AV)
Symbol Test Conditions Value Unit
= 8A (tp = 20 µs) V
FGM
RGM
=5V.
BTW 66 BTW 67
I
GT
V
GT
V
GD
tgt VD=V
I
L
I
H
V
TM
I
DRM
I
RRM
dV/dt Linear slope up to
tq VD=67%V
VD=12V (DC) RL=33Ω Tj=25°C MAX 50 80 mA
VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
VD=V
DRMRL
DRMIG
dIG/dt = 1.5A/µs
IG= 1.2 I
IT= 500mA gate open Tj=25°C MAX 75 150 mA
BTW 66 ITM= 60A
BTW 67 ITM= 80A tp= 380µs
V
V
VD=67%V
gate open
dITM/dt=30 A/µsdV
DRM
RRM
GT
Rated
Rated
DRM
DRMITM
=3.3kΩ Tj= 125°C MIN 0.2 V
= 200mA
= 60A VR= 75V
/dt= 20V/µs
D
V
V
DRM
DRM
≤ 800V
≥ 1000V
Tj=25°C TYP 2 µs
Tj=25°C TYP 50 mA
Tj=25°C MAX 2.2 2.0 V
Tj=25°C MAX 0.02 mA
Tj= 125°C6
Tj= 125°C MIN 500
250
Tj= 125°C TYP 100 µs
V/µs
2/6
Page 3
BTW66 / BTW 67
Package I
BTW 66
(Insulated)
BTW 67
(Insulated)
Fig.1 : Maximum average power dissipation versus
average on-state current (BTW 66).
T(RMS)
A V BTW
30 200 X
40 200 X
V
DRM/VRRM
Sensitivity Specification
400 X
600 X
800 X
1000 X
1200 X
400 X
600 X
800 X
1000 X
1200 X
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
and T
contact (BTW 66).
) for different thermal resistances heatsink +
case
amb
Fig.3 : Maximum average power dissipation versus
average on-state current (BTW 67).
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
and T
contact (BTW 67).
) for different thermal resistances heatsink +
case
amb
3/6
Page 4
BTW 66 / BTW 67
Fig.5 : Average on-state current versus case
temperature (BTW 66).
Fig.7 : Relative variation of thermal impedance junction
to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1
Fig.6 : Average on-state current versus case
temperature (BTW 67).
Fig.8 : Relative variation of gate trigger current versus
junction temperature.
0.1
tp(s)
0.01
1E-3 1E-2 1E-1 1E+0 1E+1
Fig.9 : Non repetitive surge peak on-state current
versus number of cycles (BTW 66).
Fig10 : Non repetitive surge peak on-state current
versus number of cycles (BTW 67).
4/6
Page 5
BTW66 / BTW 67
Fig.11 : Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t ≤ 10 ms, and
corresponding value of I2t (BTW 66).
Fig.13 : On-state characteristics (maximum values)
(BTW 66).
Fig.12 : Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t ≤ 10 ms, and
corresponding value of I2t (BTW 67).
Fig.14 : On-state characteristics (maximum values)
(BTW 67).
5/6
Page 6
BTW 66 / BTW 67
PACKAGE MECHANICAL DATA
RD 91 Plastic
b2
C
N2
E
Marking : type number
Weight : 20 g
a2
a1
A
LIL2
d1
c1c2
N1
B
F
I
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 40.00 1.575
a1 29.90 30.30 1.177 1.193
a2 22.00 0.867
B 27.00 1.063
b1 13.50 16.50 0.531 0.650
b2 24.00 0.945
C 14.00 0.551
c1 3.50 0.138
c2 1.95 3.00 0.077 0.118
E 0.70 0.90 0.027 0.035
F 4.00 4.50 0.157 0.177
I 11.20 13.60 0.441 0.535
L1 3.10 3.50 0.122 0.138
L2 1.70 1.90 0.067 0.075
N1 33° 43° 33° 43°
N2 28° 38° 28° 38°
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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