Datasheet BTS621L1 E3128A Specification

PROFET

Smart Two Channel Highside Power Switch

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

1

)

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

protection

bb

Application

•

µC compatible power switch with diagnostic

feedback for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays, fuses and discrete circuits

Product Summary Overvoltage protection V Operating voltage

V

bb(AZ)

bb(on)

channels: each

On-state resistance RON 100 50 Load current (ISO) Current limitation

I

L(ISO)

I

L(SCr)

TO-220AB/7

7

Standard

1

Straight leads

1

®

BTS621L1

43 V

5.0 ... 34 V

both parallel

mΩ

4.4 8.5 A 8 8 A

7

SMD

7

1

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS

Voltage

source

V

Logic

Voltage

sensor

IN1

3

IN2

6

ESD

5

ST

PROFET

Logic



Overvoltage

protection

Level shifter

Rectifier 1

Charge

pump 1

Charge

pump 2

Level shifter

Rectifier 2

GND

2

Signal GND



technology. Providing embedded protective functions.

+ V

bb

OUT1

4

1

7

Load

O2

Load GND

Current

limit 1

Current

limit 2

Gate 1

protection

Limit for unclamped ind. loads 1

Open load

Short to Vbb

detection 1

Gate 2

protection

Limit for unclamped ind. loads 2

Open load

Short to Vbb

detection 2

Temperature

sensor 1

Temperature

sensor 2

OUT2

RR

O1

GND

1)

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Semiconductor Group 1 of 15 2003-Oct-01

PROFET

®

BTS621L1

Pin Symbol Function

1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1

2 GND Logic ground

3 IN1 Input 1, activates channel 1 in case of logical high signal

4 Vbb Positive power supply voltage,

the tab is shorted to this pin

5 ST

Diagnostic feedback: open drain, low on failure

6 IN2 Input 2, activates channel 2 in case of logical high signal

7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

Load dump protection2) V

3)

R

= 2 Ω, RL= 2.7 Ω, t

I

d

LoadDump

= 200 ms, IN= low or high

= UA + Vs, UA = 13.5 V

Vbb 34 V

4

V

Load dump

)

60 V

Load current (Short circuit current, see page 5) IL self-limited A Operating temperature range Storage temperature range Power dissipation (DC), T

≤ 25 °C P

C

Inductive load switch-off energy dissipation, single pulse V

= 12V, T

bb

one channel, IL = 4.4 A, Z both channels parallel, IL = 8.5 A, Z

= 150°C, TC = 150°C const.

j,start

= 32 mH, 0 Ω:

L

= 17 mH, 0 Ω: 790

L

Tj T

stg

75 W

tot

-40 ...+150

-55 ...+150

°C

EAS 395 mJ

see diagrams on page 9 Electrostatic discharge capability (ESD) IN:

(Human Body Model) all other pins:

V

1.0

ESD

kV

2.0

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 7

IIN IST

±2.0 ±5.0

mA

2)

Supply voltages higher than V

150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the

protection of the input is integrated.

3)

RI = internal resistance of the load dump test pulse generator

4)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

Semiconductor Group 2 2003-Oct-01

PROFET

Thermal Characteristics

®

BTS621L1

Parameter and Conditions Symbol Values Unit

min typ max Thermal resistance chip - case, both channels:

each channel:

junction - ambient (free air):

SMD version, device on PCB5):

R

thJC

thJA

--

35

1.7

3.4 75

K/W

Electrical Characteristics

Parameter and Conditions, each channel Symbol Values Unit

at Tj = 25 °C, V

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1 or 7) IL = 2 A Tj=25 °C:

each channel Tj=150 °C:

= 12 V unless otherwise specified

bb

RON

min typ max

--

80

160

100

200

mΩ

Nominal load current, ISO Norm (pin 4 to 1 or 7)

VON = 0.5 V, TC = 85 °C each channel:

both channels parallel:

Output current (pin 1 or 7) while GND disconnected

or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8

Turn-on time IN to 90% V Turn-off time IN to 10% V R

= 12 Ω, T

L

=-40...+150°C

j

OUT

: :

Slew rate on 10 to 30% V

OUT

= 12 Ω, T

L

=-40...+150°C

j

, R

Slew rate off 70 to 40% V

OUT

, R

L

= 12 Ω, T

=-40...+150°C

j

I

L(ISO)

I

L(GNDhigh)

ton t

off

dV /dt

on

-dV/dt

3.5

6.8

4.4

8.5

--

-- -- 10 mA

80 80

200 200

400 400

0.1 -- 1 V/µs

off

A

µs

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air.

2

(one layer, 70µm thick) copper area for V

bb

Semiconductor Group 3 2003-Oct-01

PROFET

®

BTS621L1

Parameter and Conditions, each channel Symbol Values Unit

at Tj = 25 °C, V

= 12 V unless otherwise specified

bb

min typ max

Operating Parameters

Operating voltage6) Tj =-40...+150°C: V Undervoltage shutdown Tj =-40...+150°C: V Undervoltage restart Tj =-40...+25°C:

V

5.0 -- 34 V

bb(on)

bb(under)

bb(u rst)

3.5 -- 5.0 V

-- -- 5.0

Tj =+150°C: Undervoltage restart of charge pump

V

bb(ucp)

--

5.6 7.0 V

see diagram page 13 Tj =-40...+150°C: Undervoltage hysteresis

∆V

bb(under)

= V

bb(u rst)

- V

bb(under)

Overvoltage shutdown Tj =-40...+150°C: V Overvoltage restart Tj =-40...+150°C: V Overvoltage hysteresis T Overvoltage protection

7)

Tj =-40...+150°C:

=-40...+150°C: ∆V

j

∆V

bb(over)

bb(o rst)

V

bb(AZ)

bb(under)

-- 0.2 -- V

34 -- 43 V 33 -- -- V

-- 0.5 -- V

bb(over)

42 47 -- V Ibb=40 mA Standby current (pin 4)

I

VIN=0 T T

Leakage output current (included in I

VIN=0

=-40...+25°C:

j

= 150°C:

j

)

bb(off)

Operating current (Pin 2)8), VIN=5 V

bb(off)

I

-- -- 12 µA

L(off)

I

-- 4 6 mA

GND

--

14 17

both channels on, Tj =-40...+150°C Operating current (Pin 2)8) one channel on, Tj =-40...+150°C:

I

-- 2 3 mA

GND

7.0

30 35

V

µA

6)

At supply voltage increase up to Vbb= 5.6 V typ without charge pump, V

7)

See also V

8)

Add I

, if IST > 0, add IIN, if VIN>5.5 V

ST

in table of protection functions and circuit diagram page 8.

ON(CL)

OUT

≈V

- 2 V

bb

Semiconductor Group 4 2003-Oct-01

PROFET

®

BTS621L1

Parameter and Conditions, each channel Symbol Values Unit

at Tj = 25 °C, V

= 12 V unless otherwise specified

bb

min typ max

Protection Functions9)

Initial peak short circuit current limit (pin 4 to 1

I

L(SCp)

or 7)

Repetitive short circuit shutdown current limit I

=-40°C:

Tj

=25°C:

Tj

=+150°C:

Tj

11

9 5

L(SCr)

18 14

8

25 22 14

A

Tj = Tjt (see timing diagrams, page 11) -- 8 -- A

Output clamp (inductive load switch off) at V

= Vbb - V

OUT

ON(CL)

I

= 40 mA, Tj =-40..+150°C: V

L

ON(CL)

41

47 53 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis Reverse battery (pin 4 to 2) Reverse battery voltage drop (V

10)

-Vbb -- -- 32 V

)

> V

out

bb

IL = -2.9 A, each channel Tj=150 °C: -V

∆

Tjt -- 10 -- K

ON(rev)

--

610 --

mV

Diagnostic Characteristics

Open load detection current Tj=-40 °C:

(on-condition) Tj=25 ..150°C:

Open load detection voltage

T

11)

(off-condition)

=-40..150°C:

j

Internal output pull down

(pin 1 or 7 to 2), V

=5 V, Tj=-40..150°C

OUT

I

20

L (OL)

V

OUT(OL)

RO

--

20

--

400 300

mA

2 3 4V

4

10 30 kΩ

9)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

10)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8).

11)

External pull up resistor required for open load detection in off state.

Semiconductor Group 5 2003-Oct-01

PROFET

®

BTS621L1

Parameter and Conditions, each channel Symbol Values Unit

at Tj = 25 °C, V

Input and Status Feedback

Input resistance

Tj=-40..150°C, see circuit page 7 Input turn-on threshold voltage Tj =-40..+150°C: V Input turn-off threshold voltage Tj =-40..+150°C: V

Input threshold hysteresis ∆ V

Off state input current (pin 3 or 6), VIN = 0.4 V,

= 12 V unless otherwise specified

bb

12)

min typ max

R

2.5 3.5 6 kΩ

I

1.7 -- 3.5 V

IN(T+)

1.5 -- -- V

IN(T-)

-- 0.5 -- V

IN(T)

I

1 -- 50 µA

IN(off)

Tj =-40..+150°C

On state input current (pin 3 or 6), VIN = 3.5 V,

I

20 50 90 µA

IN(on)

Tj =-40..+150°C

Delay time for status with open load after switch

t

d(ST OL4)

100 320 800 µs

off (other channel in off state) (see timing diagrams, page 12), Tj =-40..+150°C

Delay time for status with open load after switch

t

d(ST OL5)

-- 5 20 µs

off (other channel in on state) (see timing diagrams, page 12), Tj =-40..+150°C

Status invalid after positive input slope (open load) Tj=-40 ... +150°C:

t

d(ST)

-- 200 600 µs

Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+25°C, IST = +1.6 mA:

T

= +150°C, IST = +1.6 mA:

j

V

ST(high)

V

ST(low)

5.4

--

6.1

--

0.4

0.6

V

12)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Semiconductor Group 6 2003-Oct-01

PROFET

®

BTS621L1

Truth Table

Normal operation

Open load

Short circuit to V

bb

Overtemperature

Undervoltage/ Overvoltage X X L L H

Channel 1

Channel 2

Channel 1

Channel 2

both channel

Channel 1

Channel 2

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)

IN1 IN2 OUT1 OUT2 ST

BTS621L1

L L H H L L H

L H X L L H

L H X L X H L H X X

L H L H L H X

L L H L H X

L L H L H X X X L H

L L H H Z Z H

L H X H H H

L H X L L L L L X X

L

H

L

H

L

H

X

Z Z

H

L

H

X

H H H

L L L X X L L

H(L

L

H(L

L

H(L

H H H H

13)

H L

13)

H L

14)

H

15)

14)

H

15)

H L L H L H L

)

Terms

V

bb

V

IN1

I

bb

IN1

R

GND

4

V

bb

PROFET

GND

2

I

GND

OUT1

OUT2

I

IN1

3

I

IN2

6

I

ST

V

IN2

ST

5

V

ST

V

ON1

V

ON2

I

L1

1

I

L2

7

V

OUT1

V

OUT2

Input circuit (ESD protection)

R

IN

I

ESD-ZD

I

GND

I

ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

13)

With additional external pull up resistor

14)

An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R is used, an offset voltage at the GND and ST pins will occur and the V

15)

Low resistance to

V

may be detected in the ON-state by the no-load-detection

bb

signal may be errorious.

ST low

GND

Semiconductor Group 7 2003-Oct-01

PROFET

®

BTS621L1

Status output

R

ST(ON)

GND

ESD-Zener diode: 6.1 V typ., max 5 mA; R

ST(ON)

< 380 Ω at 1.6 mA, ESD zener diodes are not

to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Inductive and overvoltage output clamp

V

Z

PROFET

V

clamped to 47 V typ.

ON

GND

ESD-

ZD

ST

+5V

+ V

OUT

bb

V

ON

Overvolt. and reverse batt. protection

+ V

bb

V

R

I

IN1

IN2

ST

R

ST

V

Z1

= 6.1 V typ., VZ2 = 47 V typ., R

V

Z1

R

= 150 Ω

GND

Logic

Signal GND

Z2

GND

R

GND

= 3.5 kΩ typ,

I

Open-load detection

ON-state diagnostic condition: VON < R high

ON

3

6

5

ST

Open load

detection

Open load

detection

IN1

PROFET

IN2

ST

GND

Signal GND

I

bb

4

V

bb

2

V

GND

> 3 V typ.; IN low

OUT

OUT1

OUT2

OUT

Logic

unit

OFF-state diagnostic condition: V

OFF

Logic

unit

GND disconnect

V

bb

V

Any kind of load. In case of Input=high is V

Due to V

V

IN2

IN1

>0, no VST = low signal available.

GND

ON

R

1

7

≈ V

* I

; IN

L(OL)

+ V

bb

V

ON

OUT

R

EXT

V

OUT

O

- V

IN

IN(T+)

.

Semiconductor Group 8 2003-Oct-01

PROFET

®

BTS621L1

GND disconnect with GND pull up

4

>

VIN - V

V

bb

PROFET

GND

2

IN(T+)

1

OUT1

OUT2

7

V

GND

device stays off

V

IN1

V

IN2

V

bb

Any kind of load. If V Due to V

>0, no VST = low signal available.

GND

3

6

5

V

IN1

IN2

ST

GND

Vbb disconnect with energized inductive load

4

3

IN1

high

IN2

6

ST

5

V

bb

V

bb

PROFET

GND

2

OUT1

OUT2

1

7

Normal load current can be handled by the PROFET itself.

Vbb disconnect with charged external inductive load

Inductive Load switch-off energy dissipation

E

bb

E

AS

V

IN

=

ST

bb

PROFET

GND

OUT

L

{Z

R

L

Energy stored in load inductance:

L

2

1

E

/

=

·L·I

2

While demagnetizing load inductance, the energy dissipated in PROFET is

= Ebb + EL - ER= V

E

AS

with an approximate solution for R

· L

I

L

=

·(V

E

AS

2

·R

+ |V

bb

OUT(CL)

L

|)· ln (1+

ON(CL)·iL

L

> 0 Ω:

|V

(t) dt,

I

L·RL

OUT(CL)

Maximum allowable load inductance for a single switch off (both channels parallel)

L = f (I

12 V, R

=

V

bb

L [mH]

10000

L

); T

j,start

L

150°C,T

=

0 Ω

=

150°C const.,

=

C

E

|

Load

L

R

)

4

3

IN1

high

IN2

6

ST

5

V

bb

If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.

V

bb

PROFET

GND

2

OUT1

OUT2

1

D

7

1000

100

10

1

357911

IL [A]

Semiconductor Group 9 2003-Oct-01

PROFET

Typ. transient thermal impedance chip case

Z

= f(tp), one Channel active

thJC

Z

[K/W]

thJC

10

1

D=

0.5

0.1

0.2

0.1

0.05

0.02

0.01 0

®

BTS621L1

0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

tp [s]

Typ. transient thermal impedance chip case

Z

= f(tp), both Channel active

thJC

Z

[K/W]

thJC

1

0.1 D=

0.5

0.2

0.1

0.05

0.02

0.01 0

0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

tp [s]

Semiconductor Group 10 2003-Oct-01

PROFET

®

BTS621L1

Timing diagrams

Figure 1a: Vbb turn on:

IN1

IN2

V

bb

V

OUT1

V

OUT2

ST open drain

Figure 2a: Switching a lamp:

Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels

Figure 2b: Switching an inductive load

IN

t

ST

V

OUT

I

L

I

t

L(OL)

*) if the time constant of load is too large, open-load-status may occur

d(ST)

*)

t

IN

ST

V

I

L

OUT

Figure 3a: Short circuit shut down by overtempertature, reset by cooling

IN

I

L

other channel: normal operation

I

L(SCp)

I

L(SCr)

t

ST

Heating up may require several milliseconds, depending on external conditions

t

Semiconductor Group 11 2003-Oct-01

PROFET

®

BTS621L1

Figure 4a: Overtemperature:

Reset if T

<Tjt

j

IN

ST

V

OUT

T

J

Figure 5b: Open load: detection in ON-state, turn on/off to open load

IN1

IN2 channel 2: normal operation

V

OUT1

I

L1

channel 1: open load

t

d(ST)

t

d(ST OL4)

t

d(ST)

ST

t

d(ST OL5)

t

Figure 5a: Open load: detection in ON-state, open load occurs in on-state

IN1

IN2 channel 2: normal operation

V

OUT1

channel 1:

I

L1

open

load

t

d(ST OL1)

normal

t

d(ST OL2)

load

open

load

t

d(ST OL1)

t

d(ST OL2)

ST

t

d(ST OL1)

= 30 µs typ., t

d(ST OL2)

= 20 µs typ

Figure 5c: Open load: detection in ON- and OFF-state (with R

), turn on/off to open load

EXT

IN1

IN2 channel 2: normal opera tion

V

OUT1

I

L1

ST

channel 1: open load

t

d(ST)

t

d(ST)

t

t impedance

depends on external circuitry because of high

d(ST OL5)

t

d(ST OL5)

t

Semiconductor Group 12 2003-Oct-01

PROFET

Figure 6a: Undervoltage:

Figure 7a: Overvoltage:

®

BTS621L1

IN

V

bb

V

OUT

V

bb(under)

ST open drain

Figure 6b: Undervoltage restart of charge pump

V

on

ON(CL)

bb(u cp) bb(u rst)

t

IN

V

bb

V

OUT

V

ON(CL)

V

bb(over)

V

bb(o rst)

ST

t

V

bb(o rst)

bb(over)

off-state

V

bb

off-state

V

bb(u rst)

V

bb(under)

charge pump starts at V

bb(u cp)

bb(ucp)

on-state

=5.6 V typ.

Semiconductor Group 13 2003-Oct-01

PROFET

®

BTS621L1

Package and Ordering Code

All dimensions in mm

Standard TO-220AB/7 Ordering code

BTS621L1 Q67060-S6304-A2

TO 220AB/7, Opt. E3230 Ordering code

BTS621L1 E3230 Q67060-S6304-A3

SMD TO 220AB/7, Opt. E3128 Ordering code

BTS621L1 E3128A T&R:

Changed since 04.96 Date Change

Dec 1996

t

d(ST OL4)

max reduced from 1500 to 800µs, typical from 400 to 320µs, min limit unchanged

E

maximum rating and diagram

AS

added

Zth specification added max Output leakage current IL(off)

reduced from 20 to 12 µA

increased ESD capability Typ. reverse battery voltage drop -

V

ON(rev)

added

Q67060-S6304-A4

Semiconductor Group 14 2003-Oct-01

PROFET

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

®

BTS621L1

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Semiconductor Group 15 2003-Oct-01

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