Page 1
PROFET® Preliminary Data Sheet BTS550P
)
Smart Highside High Current Power Switch
Features
•
Overload protection
•
Current limitat ion
•
Short circuit pr otection
•
Overtemperature protection
•
Overvoltage protection (including load dump)
•
Clamp of negative volt age at output
•
Fast deenergizing of induc tive loads
•
Low ohmic inverse current operation
•
Reverse battery pr otection
•
Diagnostic feedback with load current sense
•
Open load detection via c ur r ent sense
•
Loss of
•
Electrostatic discharge (ESD) protection
V
protection
bb
2)
1)
Application
•
Power switch with c ur r ent sense diagnostic
feedback for 12
•
Most suitable f or loads with high inrush current
like lamps and motors; all types of res is tive and
inductive loads
•
Replaces electromechanic al r elay s , fuses and
discrete circuits
V and 24 V DC grounded loads
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current l i m i t ation
Current sense ratio
TO-218AB/5
Straight leads
V
bb(AZ)
V
ON(CL
V
bb(on)
R
ON
I
L(ISO)
I
L(SCp)
I
L :
1
63 V
42
V
5.0 ... 34 V
4.0
mΩ
97 A
180 A
I
IS
21000
5
General Description
N channel vertical power F E T with charge pump, c ur r ent controlled input and diagnos tic feedback with load
current sense, integrated in Smart S IPMOS chip on chip technology. Fully protected by em bedded pr otection
functions.
3 & Tab
+ V
R
Voltage
source
Voltage
sensor
2
IN
ESD
I
IN
V
IN
V
IS
Logic
I
IS
IS
4
R
IS
Overvoltage
protection
Charge pump
Level shifter
Rectifier
Current
limit
Gate
protection
Limit for
unclamped
ind. loads
Output
Voltage
detection
Temperature
sensor
bb
Current
Sense
PROFET
bb
OUT
1, 5
I
L
Load GND
Load
Logic GND
1
) With additional ext er nal diode.
2)
Additional external diode requir ed for energized inductive loads ( s ee page 8) .
Semiconductor Group Page 1 of 15 1998-Aug-31
Page 2
Preliminary Data Sheet BTS550P
Pin Symbol Function
1OUTO
2 IN I Input, act iv ates the power switc h in c as e of short to gr ound
3V
4ISS
5OUTO
bb
Output to the load. The pins
especially in high current applic ations!
Positive power supply v oltage, the tab is elec trically connect ed to this pin.
+
In high current applications the tab should be used for the V
4)
instead of this pin
Diagnostic feedback pr ov iding a s ens e c ur r ent proportional to t he load
current; zer o c ur r ent on failure (see Tr uth Table on page 6)
Output to the load. The pins
especially in high current applic ations!
.
1 and 5 must be shorted with each other
3)
1 and 5 must be shorted with each other
3)
connection
bb
Maximum Ratings at
T
j = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection,
T
=-40 ...+150°C:
j,start
Load current (short circuit current, see page 4)
Load dump protection
5)
R
= 2 Ω,
I
R
= 0.54 Ω,
L
V
LoadDump
t
= 200 ms,
d
=
U
A
+
V
s
,
U
= 13.5 V
A
V
bb
V
bb
I
L
V
Load dump
42 V
34 V
self-limited A
)
6
90 V
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
T
T
P
j
stg
tot
-40 ...+150
-55 ...+150
360 W
°C
Inductive load switch-off energy dissipation, single pulse
V
= 12V,
bb
I
= 20 A, ZL = 15 mH, 0 Ω, see diagrams on page 9
L
Electrostatic discharge capability (ESD)
Human Body Model acc. M IL-STD883D, method 3015.7 and ESD
assn. std. S 5.1-1993, C = 100 pF , R = 1.5 kΩ
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagr am s on page 6 and 7
T
j,start
= 150°C,
T
= 150°C const.,
C
E
V
I
I
AS
ESD
IN
IS
+15 , -250
+15 , -250
3J
4kV
mA
3)
Not shorting all outputs will considerably increas e the on-state r es is tance, reduce the peak c ur r ent
capability and decrease t he c ur r ent sense accuracy
4)
Otherwise add up to 0.5 mΩ (depending on used length of t he pin) to the RON if the pin is used inst ead of
the tab.
5)
R
= internal resis tance of the load dump t es t pulse generator.
I
6)
V
Load dump
is setup without the DUT connected t o the generator per I S O 7637-1 and DIN 40839.
Semiconductor Group Page 2 1998-Aug-31
Page 3
Preliminary Data Sheet BTS550P
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
)
7
Thermal resistance chip - case:
junction - ambient (free air):
R
R
thJC
thJA
-- -- 0.35
--
30 --
K/W
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at
T
j = -40 ... +150 °C,
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,5, s ee m eas ur em ent
circuit page 6)
Nominal load current9) (Tab to pins 1, 5)
ISO 10483-1/6.7:
Maximum load current in resistive range
(Tab to pins 1,5)
see diagram on page 12
Turn-on time
Turn-off time IIN to 10%
R
= 1 Ω ,
L
T
=-40...+150°C
j
Slew rate on
R
= 1 Ω ,
L
T
=25°C
j
Slew rate off
R
= 1 Ω ,
L
T
=25°C
j
V
= 12 V unless otherwis e s pec ified
bb
I
= 20 A,
L
V
= 0,
I
V
ON
V
V
I
L
I
ON
OUT
OUT
= 20 A,
L
= 120 A,
= 20 A,
L
T
= 85 °C
c
= 1.8 V,
= 1.8 V,
)
)
T
IN
V
= 6V8),
bb
V
= 0.5 V,
ON
V
11)
IIN to 90%
11)
(10 to 30%
11)
(70 to 40%
min typ max
T
= 25 °C:
j
T
= 150 °C:
j
T
= 150 °C: -- 8
j
T
= 150 °C:
j
10)
T
= 25 °C:
c
= 150 °C:
c
V
OUT
V
OUT
:
:
R
ON
R
ON(Static)
I
L(ISO)
I
L(Max)
t
on
t
off
dV/dt
-dV/dt
on
off
-- 3.3
6.4
-- 9 12
80 97 -- A
350
180
140
40
--
--
--
--
-- 0.45 -- V/µs
-- 0.55 -- V/µs
4.0
7.8
600
150
--
--
mΩ
A
µs
Inverse Load Current Operation
On-state resistance (Pins 1,5 to pin 3)
V
= 12 V,
bIN
see diagram on page 9
Nominal inverse load current (Pins 1,5 to Tab)
V
= -0.5 V,
ON
Drain-source diode voltage (V
I
-
=
20 A,
L
7)
Thermal resist anc e R
8)
Decrease of V
long as V
9)
Not tested, s pec ified by design.
10)
T
is about 105°C under thes e c onditions.
J
11)
See timing diagram on page 13.
I
bIN
IN
I
= - 20 A
L
T
= 85 °C
c
= 0,
below 10 V causes a slowly a dynamic inc r eas e of RON to a higher value of R
bb
> V
bIN(u) max
10
> V
out
T
j = +150°C
case to heatsink ( about 0.25 K/W with silicone paste) not included!
thCH
, RON increase is less than 10 % per s ec ond for TJ < 85 °C.
bb
T
)
T
= 25 °C:
j
= 150 °C:
j
R
ON(inv)
I
L(inv)
-
V
ON
-- 3.3
80 97 -- A
-- 0.8 -- V
6.4
4.0
7.8
ON(Static)
mΩ
. As
Semiconductor Group Page 3 1998-Aug-31
Page 4
Preliminary Data Sheet BTS550P
I
I
Parameter and Conditions Symbol Values Unit
at
T
j = -40 ... +150 °C,
Operating Parameters
Operating voltage (
Undervoltage shutdown
Undervoltage start of charge pump
see diagram page 14
Overvoltage protection
I
= 15 mA
bb
Standby current
I
= 0
IN
Protection Functions
Short circuit current limit (Tab to pins 1,5)
V
= 12 V, time until shutdown max. 350 µs
ON
Short circuit shutdown delay after input current
positive slope,
min. value valid only if input "off-s ignal" time exceeds 30 µs
Output clamp
(inductive load switch off)
Output clamp (inductive load switch off)
at
V
=
V
bb
I
= 40 mA
L
OUT
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
Thermal overload trip temperature
Thermal hysteresis
15)
-
V
ON
V
ON(CL)
V
= 12 V unless otherwis e s pec ified
bb
= 0)
13)
14)
8, 12)
T
T
= 25...+150°C:
j
T
=-40...+25°C:
j
V
IN
T
T
T
T
=+150°C:
c
>
V
ON(SC)
L
(e.g. overvoltage)
=-40°C:
j
= 150°C:
j
=-40°C:
c
=25°C:
c
= 40 mA:
= 20 A:
L
V
bb(on)
V
bIN(u)
V
bIN(ucp)
V
bIN(Z)
I
bb(off)
I
L(SCp)
t
d(SC)
-
V
OUT(CL)
V
ON(CL)
V
ON(SC)
T
jt
∆
T
jt
min typ max
5.0 -- 34 V
2.0 3.0 4.5 V
3.5 4.5 6.0 V
60
62
--
--
--
--
120
--
66
15
25
170
180
170
25
50
250
--
--
--
--
V
µA
A
80 -- 350 µs
----16.8
19.0
--
--
V
39 42 46.5 V
-- 6 -- V
150 -- -- °C
-- 10 -- K
12)
If the device is turned on before a V
For the voltage r ange 0..34 V the device is fully protect ed agains t overtemperat ur e and s hor t circuit.
13)
14)
15)
= V
- V
V
bIN
(typ.) t he c har ge pum p is not active and
See also
This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode
is used, V
bb
see diagram on page 6. When
IN
V
OUT
in circuit diagram on page 7.
ON(CL)
is clamped to Vbb- V
-decrease, the oper ating voltage range is ext ended down to
bb
V
increases from les s than V
bIN
V
≈
V
OUT
at inductive load swit c h off.
ON(CL)
bb
- 3 V.
bIN(u)
up to
V
bIN(ucp)
V
bIN(u)
= 5 V
.
Semiconductor Group Page 4 1998-Aug-31
Page 5
Preliminary Data Sheet BTS550P
I
T
j
T
j
k
I
I
,
T
j
V
I
T
j
V
V
T
j
V
T
j
I
T
j
T
j
T
j
I
T
j
T
j
12
)
Parameter and Conditions Symbol Values Unit
at
T
j = -40 ... +150 °C,
Reverse Battery
Reverse battery voltage
On-state resistance (Pins 1,5 to pin 3)
V
= -12V,
bb
V
IN
= 0,
V
= 12 V unless otherwis e s pec ified
bb
16)
I
= - 20 A,
L
R
= 1 kΩ
IS
T
j
T
= 25 °C:
j
= 150 °C:
-
V
R
ON(rev)
bb
min typ max
-- -- 32 V
--
3.8
--
4.6
9
mΩ
Integrated resistor in Vbb line
Diagnostic Characteristics
Current sense ratio,
static on-condition,
=
ILIS
ON
IS
bIN
L
< 1.5 V
<
OUT
> 4.0 V
:
IS
17)
- 5 v,
,
see diagram on page 11
IIS=0 by
I
=0 (e.g. during deenergiz ing of inductive loads):
IN
Sense current saturation
Current sense leakage current
Current sense settling time
Overvoltage protection
I
= 15 mA
bb
18)
= 120 A,
L
= 20 A,
L
= 12 A,
L
L
V
= 0,
IN
T
=-40°C:
=25°C:
=150°C:
=-40°C:
=25°C:
=150°C:
=-40°C:
=25°C:
=150°C:
= 6 A,
=-40°C:
=25°C:
T
=150°C:
j
I
= 0,
= 0,
IS
T
=-40°C:
j
V
IS
I
L
IN
V
= 25...+150°C:
j
= 0:
≤ 0:
R
bb
k
ILIS
I
IS,lim
I
IS(LL)
I
IS(LH)
t
s(IS)
V
bIS(Z)
-- 120 --
19 000
19 000
18 400
19 300
19 500
18 500
19 000
19 000
17 500
17 000
17 000
17 000
21 100
20 900
19 600
22 500
21 500
20 500
23 000
22 500
20 000
26 000
23 800
20 000
22 500
22 500
22 000
25 500
24 800
23 000
27 500
26 000
22 000
42 000
33 000
26 000
6.5 -- -- mA
--
--
--
0.5
2
--
-- -- 500
60
62
--
66
--
--
Ω
µA
µs
V
Input
Input and operating current (see diagram page
IN grounded (V
Input current for turn-off
16)
The reverse load curr ent through the intr ins ic dr ain- s our c e diode has to be limited by the c onnec ted load
(as it is done with all polarity symmetric loads). Note that under off-conditions (
transistor is not activated. This results in r ais ed power dis s ipation due to the higher volt age dr op ac r os s the
intrinsic drain-sour c e diode. The temperat ur e pr otection is not ac tive during reverse cur r ent operation!
Increasing reverse battery voltage capability is simply possible as described on page 8.
17)
If VON is higher, the sense c ur r ent is no longer proportional t o the load current due t o s ens e c ur r ent
saturation, s ee
18)
Not tested, s pec ified by design.
19)
We recommend the r es is tance between IN and GND to be less than 0.5
kΩ for turn-off. Consider that when the device is s witched off (I
500
reaches almost V
IN
= 0)
I
IS,lim
bb
19)
.
.
I
IN(on)
I
IN(off)
-- 0.8 1.5 mA
-- -- 80 µA
I
=
I
IN
= 0) the power
IS
kΩ for turn-on and more than
= 0) the voltage between IN and GND
IN
Semiconductor Group Page 5 1998-Aug-31
Page 6
Preliminary Data Sheet BTS550P
Parameter and Conditions Symbol Values Unit
at
T
j = -40 ... +150 °C,
V
= 12 V unless otherwis e s pec ified
bb
min typ max
Truth Table
Input
current
level level I
Normal
operation
Very high
load current
Currentlimitation
Short circuit to
GND
Overtemperature
Short circuit to
V
bb
Open load L
Negative ou t put
L
H
HH I
HH 0
L
H
L
H
L
H
H
LL 0
Output Current
Sense
IS
L
H
L
L
L
L
H
H
21
)
Z
H
0
nominal
IS, lim
0
0
0
0
0
<nominal
0
0
20)
Remark
/ k
L
, up to IIS=I
ilis
ON(Fold back)
=I
up to VON=V
IIS no longer proportional to I
if VON>V
VON > V
ON(SC)
ON(Fold back)
, shutdown will occure
IS,lim
L
voltage cl amp
Inverse load
current
L
H
H
H
0
0
L = "Low" Level
H = "High" Level
Overtemperature reset by cooling: Tj < T
(see diagram on page 14)
jt
Short circuit to GND: Shutdown r em ains latched until next r es et via input (see diagram on page 13)
Terms
I
bb
2
bIS
V
IN
IS
3
V
bb
PROFET
IS
4
I
D
R
V
I
L
OUT
1,5
IS
S
IS
V
V
bIN
V
bb
R
IN
V
IN
V
I
IN
Two or more devices c an eas ily be c onnec ted in
parallel to increase load curr ent capability.
20)
Low ohmic short to
21)
Power Transist or " OFF", potential defined by external impedance.
V
may reduce the output current
bb
RON measurement layout
ON
OUT
I
L
5.5 mm
≤
V force contacts Out Force
bb
contacts
(both out
pins parallel)
Sense
contacts
and can thus be detect ed v ia the sense current
I
.
IS
Semiconductor Group Page 6 1998-Aug-31
Page 7
Preliminary Data Sheet BTS550P
V
Input circuit (ESD protection)
R
V
Z,IN
V
bIN
IN
I
V
IN
When the device is switched off (I
ZD
IN
IN
between IN and GND reaches alm os t V
bb
= 0) the voltage
. Use a
bb
mechanical switch, a bipolar or M OS transist or with
appropriate breakdown volt age as dr iv er .
V
= 66 V (typ).
Z,IN
Current sense status output
V
bb
R
bb
ZD
V
Z,IS
Short circuit detection
V
Fault Condition:
bb
(80 ...350 µs) .
Logic
unit
V
> V
ON
Short circuit
detection
(6 V typ.) and t > t
ON(SC)
+ V
V
OUT
d(SC)
bb
ON
Inductive and overvoltage output clamp
+ V
bb
V
Z1
V
ON
V
ZG
PROFET
IS
D
S
OUT
V
OUT
IS
I
IS
R
V
= 66 V (typ.),
Z,IS
devices are connected in par allel) .
R
= 1 kΩ nominal (or 1 kΩ /n, if n
IS
I
=
S
driven only by the inter nal c ir c uit as long as
V
IS
I
/
k
can be
L
ilis
V
out
5 V. If you want to measure load curr ents up to
V
- 5 V
R
should be less than
IS
Note: For large v alues of
reach almost V
. See also overvolt age pr otection.
bb
I
bb
L(M)
R
/
IS
.
K
ilis
the voltage
V
can
IS
If you don’t use the cur r ent sense output in your
application, you can leave it open.
IS
-
I
L(M)
V
is clamped to V
ON
switch-off without D
V typ. via V
-19
V
ON(CL)
via VZ1. Using DS gives faster deener giz ing of
. With DS, V
ZG
S
= 42 V typ. A t inductive load
ON(Cl)
, V
is clamped to V
OUT
is clamped to Vbb -
OUT
OUT(CL)
=
the inductive load, but higher peak power dissipation in
the PROFET.
Overvoltage protection of logic part
V
>
IS
,
V
V
Z,IS
R
bb
PROFET
V
Z,VIS
= 66 V typ.,
R
IN
R
= 120 Ω typ.,
bb
V
V
Z,IN
Z,IS
IN
IS
R
IS
Signal GND
V
Z,IN
Logic
R
=
nominal. Note that when ov er v oltage exceeds 71
a voltage above 5V can occur between IS and GND, if
, V
R
V
are not used.
Z,VIS
R
IS
+
V
OUT
= 1 kΩ
V typ.
bb
Semiconductor Group Page 7 1998-Aug-31
Page 8
Preliminary Data Sheet BTS550P
Reverse battery protection
V
-
bb
R
bb
IN
OUT
Power
Transistor
R
L
Power GND
R
for reverse
IN
above
bb
1
+
IN
1
=
R
IN
1
+
V
R
0.1A
| - 12V
bb
R
IS
=
V
and
if D
RV
.
R
IS
|
R
V
R
IN
≥ 1 kΩ,
Logic
D
Signal GND
R
= 1 kΩ
IS
IS
D
S
R
R
IS
V
nominal. Add
battery prot ec tion in applications with V
16
V
|
16)
V
; recommended value:
0.1A
bb
if DS is not used (or
| - 12V
1
R
is used).
To minimize power dissipation at reverse bat tery
operation, the sum m ar iz ed c ur r ent into the IN and I S
pin should be about 120mA. T he c ur r ent can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSF E T input switch or
by proper adjusting the c ur r ent through
Version b:
V
V
bb
IN
V
Zb
bb
PROFET
IS
OUT
Note that ther e is no r ev er s e battery protec tion when
using a diode without additional Z - diode V
Version c: Sometimes a neccessary v oltage clamp is
given by non inductive loads R
connected to the
L
same switch and eliminat es the need of clamping
circuit:
S
V
bb
IN
V
bb
PROFET
IS
OUT
ZL
, VZb.
R
L
Vbb disconnect with energized inductive
load
Provide a current path with load current c apability by
V
OUT
< 72 V or
ZL
250 mA.
V
ZL
using a diode, a Z-diode, or a v ar is tor. (
V
< 30 V if RIN=0). For higher c lam p v oltages
Zb
currents at IN and IS have to be limited to
Version a:
V
bb
IN
V
bb
PROFET
IS
Semiconductor Group Page 8 1998-Aug-31
Page 9
Preliminary Data Sheet BTS550P
10000
Inverse load current operation
V
V
bb
+
-
V
IN
IN
V
IS
The device is specif ied for inverse load current
V
>
V
operation (
OUT
> 0V). The current sens e
bb
feature is not av ailable dur ing this kind of operation (
= 0). With
I
= 0 (e.g. input open) only the intrins ic
IN
drain source diode is conduct ing r es ulting in considerably increased power dissipation. If t he dev ic e is
switched on (V
= 0), this power dis s ipation is
IN
decreased to the muc h lower v alue
(specifications s ee page 3) .
Temperature protection during invers e load
Note:
current operation is not possible!
bb
PROFET
IS
I
R
- I
L
OUT
V
OUT
IS
IS
R
ON(INV)
*
2
I
Energy stored in load inductance:
·L·I
/
2
2
L
1
E
=
L
While demagnetizing load induct anc e, the energy
dissipated in PROF E T is
E
= Ebb + EL - ER= ∫ V
AS
ON(CL)·iL
with an approximate solution for RL > 0
+
-
I
· L
AS
=
L
(V
·R
bb
L
2
+ |V
OUT(CL)
|) ln (1+
E
Maximum allowable load inductance for
a single switch off
I
IS
L = f (IL );
L [mH]
1000
T
j,start
=
150°C, V
= 12 V, RL = 0 Ω
bb
Ω:
|V
(t) dt,
I
·R
L
L
OUT(CL)
)
|
Inductive load switch-off energy
dissipation
E
bb
E
AS
V
bb
V
bb
IN
PROFET
IS
I
IN
OUT
Z
R
IS
L
{
i (t)
L
100
E
Load
E
L
R
L
L
E
R
10
1
0 5 10 15 20
IL [A]
Semiconductor Group Page 9 1998-Aug-31
Page 10
Options Overview
Preliminary Data Sheet BTS550P
Type BTS 550P
555
650P
Overtemperature protection with hysteresis XX
T
>150 °C, latch function
j
T
>150 °C, with auto-restart on cooling
j
22)
X
X
Short circuit to GND protection
switches off when
(when first t ur ned on after approx. 180 µs)
Overvoltage shutdown
V
ON
>6 V typ.
XX
--
Output negative voltage transient limit
to
V
to
- V
bb
ON(CL)
V
= -19 V typ X
OUT
XX
23)
23)
X
22)
Latch except when
≠ 0 V only if forced ex ternally). So t he dev ic e r em ains latched unless
between turn on and t
23)
Can be "switched off " by using a diode D
V
bb
d(SC)
-
V
<
OUT
.
V
after shutdown. In most cas es
ON(SC)
(see page 7) or leaving open the cur r ent sense output.
S
V
= 0 V after s hutdown (
OUT
V
<
bb
V
(see page 4). No latch
ON(SC)
V
OUT
Semiconductor Group Page 10 1998-Aug-31
Page 11
Characteristics
Preliminary Data Sheet BTS550P
Current sense versu s load curren t :
I
= f(
I
IS
I
IS
)
L
[mA]
7
6
5
4
3
2
1
0
0 20406080100120
max
min
Current sense ratio:
K
= f(
I
),
T
= 25 °C
L
J
0 20 40 60 80 100 120
k
ILIS
ilis
34000
32000
30000
28000
26000
24000
22000
20000
18000
16000
max
typ
min
Current sense ratio:
K
= f(
I
),
T
= -40 °C
L
J
0 20406080100120
K
ILIS
ilis
42000
40000
38000
36000
34000
32000
30000
28000
26000
24000
22000
20000
18000
16000
max
typ
min
I
L
[A]
I
[A]
L
Current sense ratio:
K
= f(
I
),
T
L
= 150 °C
J
max
max
max
typ
typ
K
ILIS
ilis
30000
30000
30000
28000
28000
28000
26000
26000
26000
24000
24000
24000
22000
22000
22000
20000
20000
20000
typ
18000
18000
18000
16000
16000
16000
0 20406080100120
0 20406080100120
0 20406080100120
min
min
min
I
L
[A]
I
L
[A]
Semiconductor Group Page 11 1998-Aug-31
Page 12
Preliminary Data Sheet BTS550P
Typ. current limit at ion characteristic
= f (VON, Tj )
I
L
I
[A]
L
700
600
500
VON > V
400
300
200
100
0
V
0 5 10 15 20
ON(FB)
(otherwise immediate
TJ = -40°C
only for t < t
ON(SC)
TJ = 25°C
TJ = 150°C
d(SC)
Typ. input current
I
= f (
V
),
IN
I
IN
[mA]
bIN
V
bIN = Vbb
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 20406080
-
V
IN
In case of V
ON
> V
(typ. 6 V) the device will be
ON(SC)
switched off by internal short circ uit detection.
Typ. on-state resistan ce
R
R
10
9
8
7
6
5
4
3
2
ON
[mOhm]
ON
= f (Vbb, Tj )
;
I
= 20 A;
L
V
IN
Tj = 15 0°C
85°C
25°C
-40°C
= 0
static
dynamic
V
[V]
ON
V
[V]
bIN
1
0
0 5 10 15 20
40
V
[V]
bb
Semiconductor Group Page 12 1998-Aug-31
Page 13
Timing diagrams
Preliminary Data Sheet BTS550P
Figure 1a: Switching a resistive load,
change of load current in on- c ondition:
I
IN
V
OUT
90%
10%
I
L
I
IS
t
on
dV/dton
tt
slc(IS)
Load 1
t
son(IS)
Load 2
t
soff(IS)
t
off
dV/dtoff
slc(IS)
Figure 2b: Switching an inductive load:
I
IN
V
OUT
I
L
I
IS
t
t
The sense signal is not v alid dur ing a s ettling time
after turn- on/off and aft er c hange of load current.
Figure 2a: Switching motor s and lam ps :
I
IN
V
OUT
I
IL
I
IS
Sense current saturation can occur at very high
inrush currents ( s ee I
IS,lim
on page 5).
Figure 3a: Short circuit :
shut down by short c ir c uit detection, r es et by I
I
IN
I
L
I
L(SCp)
t
d(SC)
I
IS
V
>>0
OUT
V
=0
OUT
t
Shut down remains latc hed until next reset v ia input.
IN
= 0.
t
Semiconductor Group Page 13 1998-Aug-31
Page 14
Figure 4a: Overtemper ature
024
6
T
<
Reset if
I
IN
I
IS
T
j
jt
Preliminary Data Sheet BTS550P
V
OUT
T
j
Figure 6a: Undervoltage rest ar t of charge pump,
overvoltage clamp
V
OUT
Auto Restart
VIN= 0
t
dynamic, short
Undervoltage
not below
V
bIN(u)
ON(CL)
V
IIN= 0
V
ON(CL)
V
04
bIN(u)
V
bIN(ucp)
V
bb
Semiconductor Group Page 14 1998-Aug-31
Page 15
Package and Ordering Code
All dimensions in mm
TO-218AB/5 Option E3146 Ordering code
E3146 Q67060-S6952A3
Preliminary Data Sheet BTS550P
Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung,
Balanstraße 73, D-81541 München
Siemens AG 1998. All Rights Reserved
Attention please!
As far as patents or other r ights of third parties ar e c onc erned, liability
is only assumed for components, not for applications , processes and
circuits implemented within components or assemblies. The
information describes a type of component and shall not be
considered as w arranted char acteris tics . Terms of deliv ery and rights
to change design reserved. For ques tions on tec hnology , deliv ery and
prices please c ontact the Semiconductor Group Offic es in Ger many
or the Siemens Companies and Representatives worldwide (see
address list). Due to tec hnical requir ements components may c ontain
dangerous substances. For information on the types in question
please contact y our nearest Siemens Office, Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
Packing: Please use the recy cling operators known to y ou. We can
also help you - get in touch with your nearest sales office. By
agreement we will take pack ing material bac k , if it is s or ted. You mus t
bear the costs of tr ans port. For pac k ing mater ial that is retur ned to us
unsorted or which we are not obliged to accept, we shall have to
invoice you for any costs incurred.
Components used in life-support devices or systems must be
expressly authorised for such purpose! Cr itical components
the Semiconductor G roup of Siemens AG, may only be us ed in life
supporting devices or systems
the Semiconductor Group of Siemens AG.
)
25
with the express wr itten approv al of
24
)
of
24)
A critical component is a component used in a life-support
device or system whose failure can reasonably be expected to
cause the failure of that life-support device or system, or to affect
its safety or effectiveness of that device or system.
25)
Life support devices or systems are intended (a) to be implanted
in the human body or (b) support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonably to assume
that the health of the user or other persons may be endangered.
Semiconductor Group Page 15 1998-Aug-31
Loading...