Datasheet BTS542E2 Datasheet (Siemens)

Smart Highside Power Switch

5

Standard

PROFET® BTS 542 E2

Features

·

Overload protection

·

Current limitation

·

Short-circuit protection

·

Thermal shutdown

·

Overvoltage protection (including load dump)

·

Fast demagnetization of inductive loads

·

Reverse battery protection

·

Undervoltage and overvoltage shutdown with

1

)

Product Summary

Overvoltage protection Operating voltage

On-state resistance Load current (ISO) Current limitation

V

bb(AZ)

V

bb(on)

R

ON

I

L(ISO)

I

L(SCr)

63 V

4.5 ... 42 V 18 21 A 70 A

auto-restart and hysteresis

·

Open drain diagnostic output

·

Open load detection in ON-state

·

CMOS compatible input

·

Loss of ground and loss of

·

Electrostatic discharge (ESD) protection

V

protection

bb

2)

TO-218AB/5

Application

·

mC compatible power switch with diagnostic

feedback for 12 V and 24 V DC grounded loads

·

All types of resistive, inductive and capacitve loads

·

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions.

m

W

bb

PROFET

+ V

bb

OUT

3

5

Load



R

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

detection

Short circuit

Gate

protection

Limit for

ind. loads

detection

Temperature

sensor

1

Signal GND

Load GND

1)

No external components required, reverse load current limited by connected load.

2)

Additional external diode required for charged inductive loads

Semiconductor Group Page 1 of 13 8.Jan.96

BTS 542 E2

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5OUT

O Output to the load

(Load, L)

Maximum Ratings at

T

j = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Load dump protection

R

= 2 W,

I

R

= 1.1 W,

L

V

LoadDump

t

= 200 ms, IN= low or high

d

=

U

+

V

,

A

U

s

A

= 13.5 V

Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC)

V

bb

V

Load dump

I

L

T

j

T

stg

P

tot

63 V

3

)

80 V

self-limited A

-40 ...+150

°C

-55 ...+150 167 W

Inductive load switch-off energy dissipation, single pulse

Electrostatic discharge capability (ESD)

T

=150 °C:

j

E V

AS

ESD

2.1 J

2.0 kV

(Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6...

V I I

IN ST

IN

-0.5 ... +6 V

± ±

5.0

mA

Thermal resistance chip - case:

junction - ambient (free air):

3)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

R R

thJC thJA

£

0.75

£

K/W

45

Semiconductor Group Page 2 8.Jan.96

Electrical Characteristics

Values

min

--

17

j

--

100

10

0.2

0.4

4.5

2.4

--

42

--

60

63

--

BTS 542 E2

Parameter and Conditions Symbol

at

T

j = 25 °C,

V

= 12 V unless otherwise specified

bb

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I

= 5 A

L

Nominal load current (pin 3 to 5) ISO Proposal:

V

ON

= 0.5 V,

T

= 85 °C

C

Output current (pin 5) while GND disconnected or

GND pulled up,

T

=-40...+150°C

V

= 0, see diagram page 7,

IN

Turn-on time to 90% Turn-off time to 10%

R

= 12

L

W

,

T

=-40...+150°C

j

Slew rate on 10 to 30%

V

OUT

,

R

= 12

W

,

T

L

=-40...+150°C

j

Slew rate off 70 to 40%

V

OUT

,

R

= 12

W

,

T

L

=-40...+150°C

j

T

=25 °C:

j

T

=150 °C:

j

V V

OUT OUT

: :

R

I

t t

dV /dt

-dV/dt

ON

L(ISO)

L(GNDhigh)

on off

on

off

Unit

typ max

15 28

18 35

m

21 -- A

-- 1 mA

--

350

--

130

-- 2 V/ms

-- 5 V/ms

W

m

s

Operating Parameters

Operating voltage 4) Undervoltage shutdown Undervoltage restart

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

Undervoltage restart of charge pump see diagram page 12

T

=-40...+150°C:

j

Undervoltage hysteresis

D

V

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

bb

Standby current (pin 3)

V

IN

=

=40 mA

=0

V

bb(u rst)

-

V

bb(under)

5)

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

Leakage output current (included in

IN=0

V

=5 V

IN

V

Operating current (Pin 1)6),

T

=-40°C:

j

=25...+150°C:

j

=-40...+25°C:

j

T

=150°C:

j

I

)

bb(off)

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

D

V

bb(under)

V

bb(over)

V

bb(o rst)

D

V

bb(over)

V

bb(AZ)

I

bb(off)

I

L(off)

I

GND

-- 42 V

-- 4.5 V

6.5 7.5 V

0.2 -- V

-- 52 V

-- -- V

0.2 -- V

--

-- V

67 12

18

6--

25 60

m

A

m

A

1.1 -- mA

4)

At supply voltage increase up to

5) 6

)

see also Add

V

I

, if

ST

in table of protection functions and circuit diagram page 7. Meassured without load.

ON(CL)

I

> 0, add

ST

I

IN

, if

V

= 6.5 V typ without charge pump,

bb

V

>5.5 V

IN

V

OUT

»

V

- 2 V

bb

Semiconductor Group Page 3 8.Jan.96

BTS 542 E2

Values

min

--

45

30

80

--

150

--

2

Parameter and Conditions Symbol

at

T

j = 25 °C,

V

= 12 V unless otherwise specified

bb

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)7), ( max 400 ms if

V

ON

>

V

ON(SC)

)

=-40°C:

T

j

=25°C:

T

j

=+150°C:

T

j

Repetitive short circuit current limit

T

=

T

(see timing diagrams, page 10)

j

jt

I

L(SCp)

I

L(SCr)

Short circuit shutdown delay after input pos. slope

V

>

V

ON

min value valid only, if input "low" time exceeds 30

ON(SC)

,

T

=-40..+150°C:

j

m

s

t

d(SC)

Output clamp (inductive load switch off) at

V

OUT

=

V

bb

-

V

ON(CL)

,

I

= 30 mA

L

V

ON(CL)

Short circuit shutdown detection voltage (pin 3 to 5)

Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation8),

T

Reverse battery (pin 3 to 1) Integrated resistor in

= 150 °C, single pulse

j Start

V

bb

line

9)

V V

bb bb

= 12 V: = 24 V:

V

ON(SC)

T

jt

D

T

E

AS

E

Load12

E

Load24

-

V

bb

R

bb

jt

Unit

typ max

--

140

95

--

70 -- A

-- 400

58 -- V

8.3 -- V

-- -- °C

10 -- K

-- 2.1

1.7

1.2

-- 32 V

120 --

A

m

s

J

W

Diagnostic Characteristics

Open load detection current

(on-condition)

7)

Short circuit current limit for max. duration of t

8)

While demagnetizing load inductance, dissipated energy in PROFET is

V

= 1/

*

L

*

I

2

L

E

AS

9)

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current I these condition is dependent on the size of the heatsink. Reverse I external GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

2

ON(CL)

* (

V

ON(CL)

of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under

GND

), see diagram page 8

-

V

bb

T

=-40 °C:

j

T

=25..150°C:

j

d(SC) max

I

L (OL)

=400 ms, prior to shutdown

E

= òò

V

AS

can be reduced by an additional

GND

ON(CL)

----1900 1500

*

i

(t) dt, approx.

L

mA

Semiconductor Group Page 4 8.Jan.96

BTS 542 E2

Values

min

1.5

1.0

--

1

10

80

350

5.4

--

Parameter and Conditions Symbol

at

T

j = 25 °C,

Input and Status Feedback

Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis

Off state input current (pin 2),

On state input current (pin 2),

Status invalid after positive input slope (short circuit) Status invalid after positive input slope (open load)

V

= 12 V unless otherwise specified

bb

10)

T

j

T

j

V

= 0.4 V

IN

V

= 3.5 V

IN

T

=-40 ... +150°C:

j

T

=-40 ... +150°C:

j

=-40..+150°C: =-40..+150°C:

V

IN(T+)

V

IN(T-)

D

V

IN(T)

I

IN(off)

I

IN(on)

t

d(ST SC)

t

d(ST)

Status output (open drain) Zener limit voltage ST low voltage

T

=-40...+150°C,

j

T

=-40...+150°C,

j

I

= +1.6 mA:

ST

I

= +1.6 mA:

ST

V

ST(high)

V

ST(low)

Unit

typ max

-- 2.4 V

-- -- V

0.5 -- V

-- 30

25 50

200 400

-- 1600

6.1

--

0.4

m

A

m

A

m

s

m

s

V

10)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Semiconductor Group Page 5 8.Jan.96

Truth Table

Normal

operation

Open load

Short circuit

to GND

Short circuit

to V

bb

Overtem-

perature

Under-

voltage

Overvoltage

BTS 542 E2

Input- Output Status

L = "Low" Level H = "High" Level

Terms

I

IN

I

V

ST

IN

V

bb

level level 542

ST

L H L H L H L H L H L H L H

IN

2

ST

4

R

GND

I

bb

3

V

bb

PROFET

GND

1

L H

11

H L

L H H L L L L L L

I

GND

)

OUT

D2

H (L

L L

I

L

5

H H H

L

H

L

H

L L

13)

L L

12)

542

E2

H H H

L

H

L

H

12)

H (L

)

) L L

H H H H

Status output

+5V

R

V

ON

OUT

ST(ON)

GND

ESD-Zener diode: 6.1 V typ., max 5 mA; R

ST(ON)

< 250 W at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

ST

ESD- ZD

Input circuit (ESD protection)

R

IN

I

ESD-

ZD ZD

I1 I2

GND

I

ZDI1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

11)

Power Transistor off, high impedance

12)

Low resistance short

13)

No current sink capability during undervoltage shutdown

V

to output may be detected by no-load-detection

bb

Semiconductor Group Page 6 8.Jan.96

BTS 542 E2

Short Circuit detection

Fault Condition:

Logic

unit

V

> 8.3 V typ.; IN high

ON

Short circuit

detection

+ V

OUT

bb

V

ON

Inductive and overvoltage output clamp

+ V

bb

V

Z

V

ON

OUT

GND

V

clamped to 58 V typ.

ON

Overvolt. and reverse batt. protection

+ V

bb

Open-load detection

ON-state diagnostic condition: high

ON

Logic

unit

Open load

detection

GND disconnect

3

V

IN

2

ST

4

V

bb

V

IN

ST

bb

PROFET

GND

1

V

ON

GND

<

OUT

R

*

I

+ V

L(OL)

bb

V

OUT

; IN

ON

5

R

IN

Logic

ST

R

ST

Rbb = 120 W typ., R

, RIN, RST for extended protection

GND

V

R

GND

+

R

Z

bb

R

bb

Z

V

GND

PROFET

Signal GND

*40 mA = 67 V typ., add

OUT

Any kind of load. In case of Input=high is Due to V

>0, no VST = low signal available.

GND

V

OUT

»

V

-

V

IN

GND disconnect with GND pull up

3

V

PROFET

-

IN

bb

GND

1

V

GND

V

device stays off

IN(T+)

OUT

5

V

bb

Any kind of load. If V Due to V

V

IN

>0, no VST = low signal available.

GND

2

4

V

GND

ST

IN

ST

>

V

IN(T+)

.

Semiconductor Group Page 7 8.Jan.96

BTS 542 E2

Vbb disconnect with charged inductive load

3

high

V

bb

high

IN

2

ST

4

IN

2

ST

4

V

bb

PROFET

GND

1

3

V

bb

PROFET

GND

1

OUT

5

Inductive Load switch-off energy dissipation

E

bb

E

AS

V

IN

=

ST

bb

PROFET

GND

OUT

Energy dissipated in PROFET EAS = Ebb + EL - ER.

E

Load

<

E

L

1

,

E

=

/

L

2

* L *

2

I

L

E

Load

L

R

V

bb

Semiconductor Group Page 8 8.Jan.96

BTS 542 E2

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground

Type BTS 542D2 542E2 Logic version

Overtemperature protection

14)15

T

>150 °C, latch function

j

T

>150 °C, with auto-restart on cooling

j

)

Short-circuit to GND protection

switches off when (when first turned on after approx. 200 ms)

V

>8.3 V typ.

ON

14)

Open load detection

in OFF-state with sensing current 30 mA typ. in ON-state with sensing voltage drop across

power transistor

Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for

overtemperature short circuit to GND short to V open load undervoltage overvoltage

bb

Status output type

CMOS Open drain

Output negative voltage transient limit (fast inductive load switch off)

to

V

-

V

bb

ON(CL)

Load current limit

high level (can handle loads with high inrush currents) medium level low level

(better protection of application)

D E

X

X X

X X X X

X X

16)

X X X

X

X X

X

X X

16)

X

-

X

14)

Latch except when

¹

0 V only if forced externally). So the device remains latched unless

between turn on and t

15)

With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage

16)

Low resistance short

V

-

V

bb

OUT

d(SC)

V

to output may be detected by no-load-detection

bb

ON(SC)

after shutdown. In most cases

V

bb

V

= 0 V after shutdown (

OUT

<

V

ON(SC)

(see page 4). No latch

V

OUT

<

V

.

Semiconductor Group Page 9 8.Jan.96

BTS 542 E2

Timing diagrams

AA

AAA

AA

AAAA

AAA

AAAAAAAA

AAA

t

Figure 1a: Vbb turn on:

IN

t

V

bb

V

OUT

d(bb IN)

AAAAAAAAAAAAAA

A

ST open drain

A

in case of too early

t

approx. 150 ms

d(bb IN)

=high the device may not turn on (curve A)

V

IN

AAAAAAA

AAAAA

AAAAAA

Figure 2b: Switching an inductive load

IN

d(ST)

ST

*)

V

OUT

I

L

I

t

*) if the time constant of load is too large, open-load-status may occur

L(OL)

t

Figure 2a: Switching a lamp,

IN

ST

V

OUT

I

L

Figure 3a: Turn on into short circuit,

IN

ST

V

OUT

t

d(SC)

I

L

t

approx. 200ms if

d(SC)

V

-

V

bb

> 8.3 V typ.

OUT

Semiconductor Group Page 10 8.Jan.96

BTS 542 E2

Figure 3b: Turn on into overload,

IN

I

L

I

L(SCp)

I

L(SCr)

ST

Figure 4a: Overtemperature: Reset if

T

<

T

j

jt

IN

ST

V

OUT

T

t

J

t

Heating up may require several milliseconds,

V

-

V

bb

< 8.3 V typ.

OUT

Figure 3c: Short circuit while on:

IN

ST

V

OUT

I

L

**)

Figure 5a: Open load: detection in ON-state, turn on/off to open load

IN

t

ST

d(ST)

V

OUT

I

L

open

t

**) current peak approx. 20 ms

t

Semiconductor Group Page 11 8.Jan.96

BTS 542 E2

V

Figure 5b: Open load: detection in ON-state, open load occurs in on-state

IN

ST

t

d(ST OL1)

t

d(ST OL2)

V

OUT

I

normal

L

open

normal

Figure 6b: Undervoltage restart of charge pump

V

[V]

ON

V

on

ON(CL)

off

V

off

bb(u rst)

bb(u cp)

bb(under)

on

t

bb(ov er)

bb(o rst)

V

bb

t

Figure 6a: Undervoltage:

d(ST OL1)

= tbd ms typ., t

d(ST OL2)

IN

V

bb

V

OUT

ST open drain

= tbd ms typ

V

bb(under)

V

bb(u cp)

V

bb(u rst)

charge pump starts at

V

bb(ucp)

Figure 7a: Overvoltage:

IN

V

bb

OUT

ON(CL)

ST

=6.5 V typ.

V

bb(over)

V

bb(o rst)

bb

[V]

t

Semiconductor Group Page 12 8.Jan.96

BTS 542 E2

Package and Ordering Code

All dimensions in mm

Standard TO-218AB/5 Ordering code

BTS 542 E2 Q67060-S6951-A2

Semiconductor Group Page 13 8.Jan.96