Datasheet BTS500801TEAAUMA1 Specification

Datasheet, Rev. 1.0, Aug. 2008

BTS50080-1TEA

Smart High-Side Power Switch
PROFET™
One Channel

Automotive Power

Smart High-Side Power Switch

BTS50080-1TEA

Table of Contents

Table of Contents

1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.1 Pin Assignment BTS50080-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4.2 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5.2 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5.3 Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5.3.1 Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6.1 Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6.2 Short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6.3 Reverse Polarity Protection - Reversave™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

6.4 Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

6.5 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

6.6 Loss of V

6.7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

7 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

7.1 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

8 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

bb

Datasheet 2 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch
PROFET™
One Channel

1Overview

Features

• Part of scalable product family

• Load current sense

• Reversave™

• Very low standby current

• Current controlled input pin

• Improved electromagnetic compatibility (EMC)

• Fast demagnetization of inductive loads

• Stable behavior at under-voltage

• Green Product (RoHS compliant)

• AEC Qualified

BTS50080-1TEA

PG-TO252-5-11

Operating voltage

Minimum overvoltage protection

Maximum on-state resistance at 150°C

Nominal load current

Minimum load current limitation peak

Maximum stand-by current for whole device with load at

The BTS50080-1TEA is a one channel high-side power switch in PG-TO252-5-11 package providing embedded
protective functions.

The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on
Smart SIPMOS chip on chip technology.

The BTS50080-1TEA has a current controlled input and offers a diagnostic feedback with load current sense and
a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.

T

= 25 °C I

j

V

bb(on)

V

ON(CL)

R

DS(ON)

I

L(nom)

I

Lpeak(SC)

bb(OFF)

5.5..30V

39 V

16 mΩ

10 A

70 A

6µA

Type Package Marking

BTS50080-1TEA PG-TO252-5-11 S50080A

Datasheet 3 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

Protective Functions

• Reversave™, channel switches on in case of reverse polarity

• Reverse battery protection without external components

• Short circuit protection with latch

• Overload protection

• Multi-step current limitation

• Thermal shutdown with restart

• Overvoltage protection (including load dump)

• Loss of ground protection

• Loss of V

• Electrostatic discharge protection (ESD)

Diagnostic Functions

• Proportional load current sense (with defined fault signal in case of overload operation, overtemperature
shutdown and/or short circuit shutdown)

• Open load detection in ON-state by load current sense

Applications

• µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads

• All types of resistive, inductive and capacitive loads

• Most suitable for loads with high inrush currents, so as lamps

• Replaces electromechanical relays, fuses and discrete circuits

protection (with external diode for charged inductive loads)

bb

Overview

Datasheet 4 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

2 Block Diagram and Terms

2.1 Block Diagram

logic IC base chip

tem per ature

IN

I

IN

IS

V

IS

V

IN

I

IS

R

IS

logic

ES D

driver

gate control

char ge pum p

load current

for w ar d voltage dr op detecti on

vol tage sensor

over

&

sens e

inducti ve load

clamp for

current

limitation

R

Block Diagram and Terms

V

bb

T

bb

OUT

I

L

LOAD

Figure 1 Block Diagram

2.2 Terms

Following figure shows all terms used in this data sheet.

V

Figure 2 Terms

V

bb

bIN

V

IN

V

bIS

I

IN

IN

R

IN

V

IS

BTS50080-1TEA

I

IS

IS

R

IS

VBB

Ov er vi ew . e mf

I

bb

OUT

V

ON,

V

OFF

I

L

V

OUT

Terms.em f

Datasheet 5 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

3 Pin Configuration

3.1 Pin Assignment BTS50080-1TEA

TAB

IN

OUT

1

2

Figure 3 Pin Configuration

3.2 Pin Definitions and Functions

Pin Configuration

V

bb

bb

IS

V

3

OUT

4

5

TO252-5.emf

Pin Symbol Function

1OUT Output; output to the load; pin 1 and 5 must be externally shorted.

2IN Input; activates the power switch if shorted to ground.

3V

4IS Sense Output; Diagnostic feedback; provides at normal operation a sense current

5OUT Output; output to the load; pin 1 and 5 must be externally shorted.

TAB V

1) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability, the clamping
capability and decrease the current sense accuracy.

bb

bb

Supply Voltage; positive power supply voltage; tab and pin 3 are internally shorted.

proportional to the load current; in case of overload, overtemperature and/or short
circuit a defined current is provided (see Table 1 “Truth Table” on Page 21).

Supply Voltage; positive power supply voltage; tab and pin 3 are internally shorted.

1)

1)

Datasheet 6 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

General Product Characteristics

4 General Product Characteristics

4.1 Absolute Maximum Ratings

Absolute Maximum Ratings

T

= 25°C (unless otherwise specified)

j

Pos. Parameter Symbol Limit Values Unit Conditions

Supply Voltages

4.1.1 Supply voltage

4.1.2 Supply voltage for short circuit protection

(single pulse)

4.1.3 Supply Voltage for Load Dump

protection

3)

Logic Pins

4.1.4 Voltage at input pin

4.1.5 Current through input pin

4.1.6 Voltage at current sense pin

4.1.7 Current through sense pin

4.1.8 Input voltage slew rate

Power Stages

4.1.9 Load current

4.1.10 Maximum energy dissipation per

channel (single pulse)

1)

Min. Max.

V

bb

V

2)

4)

5)

bb(SC)

V

bb(LD)

V

bIN

I

IN

V

bIS

I

IS

dV

/dt -20 20 V/µs –

bIN

I

L

E

AS

-16 38 V –

030V–

–45VRI = 2 Ω,

R

= 1.5 Ω

L

-16 63 V –

-140 15 mA –

-16 63 V –

-140 15 mA –

- I

Lx(SC)

A–

-0.3JVbb = 12 V,

I

= 20 A,

L(0)

T

= 150°C

j(0)

Temperatures

4.1.11 Junction temperature

4.1.12 Storage temperature

T

j

T

stg

-40 150 °C –

-55 150 °C –

ESD Susceptibility

4.1.13 ESD susceptibility HBM

Pin 2 (IN)
Pin 4 (IS)
Pin1/5 (OUT)

1) Not subject to production test, specified by design.

2) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13.

3) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator.

4) Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input
path. A series resistor RIN in the input path is also required for reverse operation at Vbb≤ -16V. See also Figure 14.

5) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range.
Protection features are not designed for continuous repetitive operation.

V

ESD

-2

-2

-4

2
2
4

kV according to

EIA/JESD 22-A
114B

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Datasheet 7 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

General Product Characteristics

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.

4.2 Thermal Resistance

Pos. Parameter Symbol Limit Values Unit Conditions

Min. Typ. Max.

4.2.1 Junction to Case

4.2.2 Junction to Ambient

free air
device on small PCB
device on standard PCB

1) Not subject to production test, specified by design.

2) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for V

3) Specified R
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.

connection. PCB is vertical without blown air.

bb

value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product

thJA

1)

1)

2)

3)

R

thJC

R

thJA

–-1.1K/W–

K/W –

-

-

-

80
45
22

-

-

-

Datasheet 8 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

Power Stages

5 Power Stages

The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump.

5.1 Input Circuit

Figure 4 shows the input circuit of the BTS50080-1TEA. The current source to Vbb ensures that the device

switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses.

V

bIN

I

IN

V

IN

I

IN

R

V

Z,IN

Figure 4 Input Circuit

A high signal at the required external small signal transistor pulls the input pin to ground. A logic supply current I
is flowing and the power DMOS switches on with a dedicated slope, which is optimized in terms of EMC emission.

V

bb

bb

Input.emf

IN

I

IN

V

OUT

90%

50%

25%

10%

t

(dV/dt)

ON

ON

t

OFF

(d V/dt)

OFF

t

t

SwitchOn.emf

Figure 5 Switching a Load (resistive)

5.2 Output On-State Resistance

The on-state resistance R
shows these dependencies for the typical on-state resistance. The voltage drop in reverse polarity mode is
described in Section 6.3.

depends on the supply voltage as well as the junction temperature Tj. Figure 6

DS(ON)

Datasheet 9 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA







ȍ















     

Figure 6 Typical On-State Resistance



Power Stages







ȍ

















    











Vbb = 12 V

T

= 25°C

j



















≥





   

Figure 7 Typical Output Voltage Drop Limitation

5.3 Output Inductive Clamp

When switching off inductive loads, the output voltage V
inductance ( -d

i

/dt =-vL/L ; -V

L

OUT

≅

-V

).

L





drops below ground potential due to the involved

OUT







Datasheet 10 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

V

bb

VBB

OUT

V

ON

I

L

V

OUT

L,
R

L

Power Stages

Out p ut Cl am p . em f

Figure 8 Output Clamp

To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop
across the device at a certain level (

V

ON(CL)

). See Figure 8 and Figure 9 for details. The maximum allowed load

inductance is limited.

V

OUT

V

bb

ON OFF

t

t

Induct iveLoad. emf

V

OUT(CL)

V

ON(CL)

I

L

Figure 9 Switching an Inductance

5.3.1 Maximum Load Inductance

While de-energizing inductive loads, energy has to be dissipated in the BTS50080-1TEA. This energy can be
calculated via the following equation:

V

EV

ON CL()

------------------------------------

⋅⋅=

In the event of de-energizing very low ohmic inductances (

bb

V

–

R

E

ON CL()

L

1

2

-- ­2

LI

⋅=

L

RLI

⋅



ln⋅ 1

-----------------------------------

V

-----------------------------------+



V

ON(CL)

R

≈0) the following, simplified equation can be used:

L

V

ON(CL)

ON(CL)

–

L

–

V

bb

+

V

bb

L

----- -

I

L

R

L

The energy, which is converted into heat, is limited by the thermal design of the component. For given starting
currents the maximum allowed inductance is therefore limited. See Figure 10 for the maximum allowed
inductance at Vbb=12V.

Datasheet 11 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

A

BTS50080-1TEA

V

= 12 V

bb

T

j(o)

≤ 150°C

L

10

mH

1

0,1

0,01

1 10 100

Figure 10 Maximum load inductance for single pulse,

T

≤ 150°C.

j(0)

Power Stages

I

L

Datasheet 12 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

Power Stages

5.4 Electrical Characteristics

V

= 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C

bb

Pos. Parameter Symbol Limit Values Unit Conditions

Min. Typ. Max.

General

5.4.1 Operating voltage

5.4.2 Undervoltage shutdown

5.4.3 Undervoltage restart of charge

pump

5.4.4 Operating current

5.4.5 Stand-by current

T

= -40 °C, Tj = 25 °C

j

T

≤120 °C

j

T

= 150 °C

j

2)

Input characteristics

5.4.6 Input current for

turn-on

5.4.7 Input current for

turn-off

Output characteristics

5.4.8 On-state resistance

T

=25°C

j

T

=150°C

j

V

=5.5V, Tj=25°C

bb

V

=5.5V, Tj=150°C

bb

5.4.9 Output voltage drop limitation at

small load currents

5.4.10 Nominal load current

(Tab to pin 1 and 5)

5.4.11 Output clamp

5.4.12 Inverse current output voltage

2) 5)

drop
(Tab to pin 1 and 5)

T

= 25 °C

j

T

= 150 °C

j

1)

2)

V

bb(on)

V

bIN(u)

V

bb(ucp)

I

IN

I

bb(OFF)

I

IN(on)

I

IN(off)

5.5 - 30 V VIN = 0 V

-2.53.5VTj = 25 °C

-45.5V–

-1.42.2mA–

µA

-

-

-

3
3
6

6
6

14

-1.42.2mAV

I

IN

bIN

= 0 A

≥ V

--30µA–

bb(ucp)

16

22

mΩ

-

V

=0V,

IN

I

=7.5A,

L

(Tab to pin 1 and 5)

-

V

≤ 0.5 V,

ON

T

≤ 150 °C

j

T

=25°C

j

mV

I

=-7.5A,

L

R

=1kΩ

IS

-

-

3) 4)

R

DS(ON)

V

ON(NL)

I

L(nom)

V

ON(CL)

-

V

ON(inv)

-

-

-

-

8
14
10
18

-3065mV–

-10-ATa = 85 °C,

39 42 - V IL=40mA,

-

-

700
300

- V

IN

Timings

5.4.13 Turn-on time to
90%

V

OUT

5.4.14 Turn-off time to
10%

V

OUT

5.4.15 Turn-on delay after inverse
operation

2)

t

ON

t

OFF

t

d(inv)

-300500µsRL = 2.2 Ω

-300500µsRL = 2.2 Ω

-1-msVbb > V

V

IN(inv)

OUT

= V

,

IN(fwd)

=0V

Datasheet 13 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

V

= 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C

bb

Power Stages

Pos. Parameter Symbol Limit Values Unit Conditions

Min. Typ. Max.

5.4.16 Slew rate On
25% to 50% V

OUT

5.4.17 Slew rate Off
50% to 25% V

1) Please mind the limitations of the embedded protection functions. See Chapter 4.1 and Chapter 6 for details.

2) Not subject to production test, specified by design

3) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm

V

thick) for

4) Not subject to production test, parameters are calculated from

5) During inverse operation (IL<0A, V

results in a delayed switch on with a time delay t

I

IS(fault)

connection. PCB is vertical without blown air.

bb

can be provided by the pin IS until standard forward operation is reached.

OUT

bIN

(dV / dt)

-(dV/dt)

> 0 V), a current through the intrinsic body diode causing a voltage drop of V

ON

OFF

after the transition from inverse to forward operation. A sense current

d(inv)

-0.30.5V/µsRL = 2.2 Ω

-0.30.6V/µsRL = 2.2 Ω

2

copper heatsinking area (one layer, 70 µm

R

and R

DS(ON)

th

Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature.

Typical values show the typical parameters expected from manufacturing.

ON(inv)

Datasheet 14 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

Protection Functions

6 Protection Functions

The device provides embedded protective functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are neither designed for continuous nor repetitive operation.

6.1 Overload Protection

The load current IL is limited by the device itself in case of overload or short circuit to ground. There are multiple
steps of current limitation
power DMOS. Please note that the voltage at the OUT pin is
typical device.

I

which are selected automatically depending on the voltage drop VON across the

Lx(SC)

V

- VON. Figure 11 shows the dependency for a

bb























      





Figure 11 Typical Current Limitation

Depending on the severity of the short condition as well as on the battery voltage the resulting voltage drop across
the device varies.

Whenever the resulting voltage drop
switch off immediately and latch until being reset via the input. The V
when

V

> 10 V typ. and the blanking time t

bIN

In the event that either the short circuit detection via
senses overtemperature before the blanking time
overtemperature detection. After cooling down with thermal hysteresis, the device switches on again. The device
will react as during normal switch on triggered by the input signal. Please refer to Figure 12 and Figure 19 for
details.

V

exceeds the short circuit detection threshold V

ON

expired after switch on.

d(SC1)

V

is not activated or that the on chip temperature sensor

ON(SC)

t

expired, the device switches off resulting from

d(SC1)







, the device will

ON(SC)

detection functionality is activated,

ON(SC)

Datasheet 15 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

0

2,5

5

7,5

10

12,5

15

0 50 100 150 200 250

mΩ

L

SC

R

SC

µH

V

bb

= 16V 18V 24V 30V

BTS50080-1TEA

detection

ON(SC)

I

IN

V

ON

V

> V

ONx

I

Lx(SC)

I

L

Figure 12 Overload Behavior

t

d(SC1)

t

m

ON(SC)

t

t

t

V_ON _detect .emf

Overtemperature detectionV

I

IN

I

L

Τ

j

Protection Functions

t

t

thermal hysteresis

t

Over_Temp.emf

6.2 Short circuit impedance

The capability to handle single short circuit events depends on the battery voltage as well as on the primary and
secondary short impedance. Figure 13 outlines allowable combinations for a single short circuit event of
maximum, secondary inductance for given secondary resistance.

5uH

10mΩ

V

bb

Figure 13 Short circuit

V

bb

IN

OUT

PROFET

IS

SHORT

CIRCUIT

L

SC

R

SC

LOAD

short_ci rcuit.emf

Datasheet 16 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

Protection Functions

6.3 Reverse Polarity Protection - Reversave™

The device can not block a current flow in reverse polarity condition. In order to minimize power dissipation, the
device offers Reversave™ functionality. In reverse polarity condition the channel will be switched on provided a
sufficient gate to source voltage is generated

R

IN

-I

IN

D

Figure 14 Reverse battery protection

IN

R

IS

IS

V

≈ V

GS

I

-I

Rbb

. Please refer to Figure 14 for details.

Rbb

-V

bb

R

bb

V

bb

Logic

IS

powe r groundsignal ground

-I

L

LOAD

Rev ers e.emf

Additional power is dissipated by the integrated
dissipation

P

diss(rev)

in reverse polarity mode.

R

resistor. Use following formula for estimation of overall power

bb

P

diss(rev)

For reverse battery voltages up to
ground. This can be achieved e.g. by using a small signal diode D in parallel to the input switch or by using a small
signal MOSFET driver. For reverse battery voltages higher then
recommended. The overall current through

Note: No protection mechanism is active during reverse polarity. The IC logic is not functional.

V

< 16 V the pin IN or the pin IS should be low ohmic connected to signal

bb

1

---------

R

IN

R

ON(rev)IL

R

should not be above 80 mA.

bb

1

+

--------

R

IS

2

⋅ R

0.08A

-------------------------------=

V

bb

2

⋅+≈

bbIRbb

V

bb

12V–

= 16 V an additional resistor R

IN

is

Datasheet 17 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

Protection Functions

6.4 Overvoltage Protection

Beside the output clamp for the power stage as described in Section 5.3 there is a clamp mechanism
implemented for all logic pins. See Figure 15 for details.

R

IN

Figure 15 Overvoltage Protection

Z,IS

Z,IN

V

V

Logic

IS OUT

bb

V

bb

OverVoltage .emf

6.5 Loss of Ground Protection

In case of complete loss of the device ground connections the BTS50080-1TEA securely changes to or remains
in off state.

6.6 Loss of Vbb Protection

In case of complete loss of Vbb the BTS50080-1TEA remains in off state.

In case of loss of V
provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode, or a varistor
(

V

to -140 mA. Please refer to Figure 16 for details.

V

R

Figure 16 Loss of V

< 30 V or VZb+VD < 16 V if RIN = 0). For higher clamp voltages currents through IN and IS have to be limited

ZL+VD

bb

IN

IS

IN

connection with charged inductive loads a current path with load current capability has to be

bb

R

R

Logic

IS

bb

inductive

bb

V

bb

LOAD

V

D

V

ZL

Vbb_dis connect_A.emf

V

bb

V

D

IS

R

Lo g ic

IS

R

IN

IN

V

Zb

R

V

bb

bb

inductive

LOAD

Vbb_dis connec t_B.emf

Datasheet 18 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

Protection Functions

6.7 Electrical Characteristics

V

= 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C

bb

Pos. Parameter Symbol Limit Values Unit Conditions

Min. Typ. Max.

Overload Protection

6.7.1 Load current limitation peak

T

= -40 °C

j

T

= +25 °C

j

T

= +150 °C

j

6.7.2 Load current limitation

T

= -40 °C

j

1) 2)

2)

Tj = +25 °C

T

= +150 °C

j

6.7.3 Load current limitation

T

= -40 °C

j

T

= +25 °C

j

T

= +150 °C

j

6.7.4 Load current limitation

T

= -40 °C

j

T

= +25 °C

j

T

= +150 °C

j

6.7.5 Load current limitation

T

= -40 °C

j

T

= +25 °C

j

T

= +150 °C

j

6.7.6 Short circuit shutdown detection
voltage

1)

6.7.7 Short circuit shutdown delay after
input current pos. slope

6.7.8 Thermal shut down temperature T

6.7.9 Thermal hysteresis

1) 2)

2)

1) 2)

3)

1)

I

Lpeak(SC)

I

L12(SC)

I

L18(SC)

I

L24(SC)

I

L30(SC)

V

ON(SC)

t

d(SC1)

j(SC)

∆T

j

220

110

70

45

33

20

15

-

-

180
125

90

-

-

80
75
60

-

-

60
55
50

-

-

40
40
35

-

-

25
25
25

2.5 3.5 4.5 V V

350 650 1200 µs VON > V

150 175

1)

-10-K-

A

V

ON

(Tab to pin 1 and 5)

-

-

A

-

V

ON

t

= 170 µs,

m

(Tab to pin 1 and 5)

-

A

80

V

ON

(Tab to pin 1 and 5)

-

-

A

60

-

V

ON

t

= 170 µs,

m

(Tab to pin 1 and 5)

-

A

40

V

ON

(Tab to pin 1 and 5)

-

-

bIN

T

= 25 °C

j

-°C -

= 1.5 V,

= 12 V,

= 18 V,

= 24 V,

= 30 V,

> 10 V typ.,

ON(SC)

Reverse Polarity

20

18

mΩ

-

V

= 0 V,

IN

I

= -7.5 A,

L

R

= 1 kΩ,

IS

(pin 1 and 5 to TAB)

-

6.7.10 On-State resistance in case of
reverse polarity

V

=-8V, Tj=25 °C

bb

V

=-8V, Tj=150 °C

bb

V

=-12V, Tj=25 °C

bb

V

=-12V, Tj=150 °C

bb

6.7.11 Integrated resistor in

1)

1)

V

line R

bb

R

ON(rev)

bb

-

-

-

-

9.5
16

9

15

-100150Ω Tj = 25 °C

Overvoltage

6.7.12 Overvoltage protection

Input pin

Sense pin

1) Not subject to production test, specified by design

V

Z

V

Z,IN

V

Z,IS

63 67 - V

63 67 - V

V Ibb = 15 mA

Datasheet 19 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

2) Short circuit current limit for max. duration of t

3) min. value valid only if input “off-signal” time exceeds 30 µs

, prior to shutdown, see also Figure 12.

d(SC1)

Protection Functions

Datasheet 20 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

Diagnosis

7 Diagnosis

For diagnosis purpose, the BTS50080-1TEA provides an enhanced sense signal at the pin IS.

The pin IS provides during normal operation a sense current, which is proportional to the load current as long as

V

> 5 V. The ratio of the output current is defined as k

bIS

the forward voltage drops below

V

< 1 V typ. The output sense current is limited to I

ON

The pin IS provides in case of any fault conditions a defined fault current
conditions are overcurrent (

V

> 1 V typ.), current limit or overtemperature switch off.

ON

= IL/IIS. During switch-on no current is provided, until

ILIS

.

IS(lim)

I

IS(fault)

as long as V

>8V. Fault

bIS

The pin IS provides no current during open load in ON and de-energisation of inductive loads.

V

b,I S

R

V

bb

bb

I

IS

I

IS(fault)

V

Z,IS

IS

Figure 17 Block Diagram: Diagnosis

V

IS

R

IS

Sense.emf

Table 1 Truth Table

Parameter Input Current Level Output Level Current Sense

Normal operation L

Overload L

Short circuit to GND L

Overtemperature L

Short circuit to V

bb

Open load L

1) H = “High” Level, L = “Low” Level, Z = high impedance, potential depends on external circuit

2) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.

1)

1)

H

H

H

H

L
H

H

L
H

L
H

L
L

L
L

H
H

1)

Z
H

≈ 0 (I

IS(LL)

nominal

≈ 0 (

I

IS(LL)

I

IS(fault)

≈ 0 (I

IS(LL)

I

IS(fault)

≈ 0 (I

IS(LL)

I

IS(fault)

≈ 0 (I

IS(LL)

< nominal

I

≈ 0 (

IS(LL)

≈ 0 (

I

IS(LH)

I

IS

)

)

)

)

)

2)

)

)

k

The accuracy of the provided current sense ratio (

Figure 18 for details. A typical resistor

R

of 1 kΩ is recommended.

IS

= IL/ IIS) depends on the load current. Please refer to

ILIS

Datasheet 21 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

A

BTS50080-1TEA

Diagnosis

25000

k

ILIS

20000

15000

max.

10000

typ.

min.

5000

0

0 5 10 15 20 25 30

I

L

Figure 18 Current sense ratio

Details about timings between the diagnosis signal IIS, the forward voltage drop VON and the load current IL in ON­state can be found in Figure 19.

Note: During operation at low load current and at activated forward voltage drop limitation the “two level control”

of

V

frequency increases at reduced load currents.

can cause a sense current ripple synchronous to the “two level control” of V

ON(NL)

1)

k

ILIS

. The ripple

ON(NL)

shortnormal operation

ON(SC)

I

Lx(SC)

I

IS(fault)

V

0.9*I

I

IN

I

IS(LL)

tVON<1V t yp.

t

t

ON

I

L

I

IS

IS1

I

L1

I

IS1

VON>1V typ.

I

L2

I

IS( lim)

I

IS2

I

IS( f ault)

I

IN

V

ON

I

L

I

IS

t

t

son(I S)

Figure 19 Timing of Diagnosis Signal in ON-state

1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Datasheet in

Section 7.1 (Position 7.1.1).

t

slc(IS)

t

delay(fault)

over-temperature

VON<1V typ.

I

L

I

IS( f ault)

Swit chOn.emf

tVON>V

t

t

t

Datasheet 22 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

Diagnosis

7.1 Electrical Characteristics

V

= 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C

bb

Pos. Parameter Symbol Limit Values Unit Conditions

Min. Typ. Max.

Load Current Sense

7.1.1 Current sense ratio, static on­condition

I

=30A

L

I

=7.5A

L

I

=2.5A

L

I

=0.5A

L

I

= 0 (e.g. during de energizing of

IN

inductive loads)

7.1.2 Sense saturation current

1)

1)

7.1.3 Sense current under fault
conditions

7.1.4 Current sense leakage current

7.1.5 Current sense offset current

7.1.6 Current sense settling time to 90%

1)

I

IS_stat.

7.1.7 Current sense settling time to 90%

1)

I

IS_stat.

7.1.8 Fault-Sense signal delay after input
current positive slope

1) Not subject to production test, specified by design

k

ILIS

I

IS(lim)

I

IS(fault)

I

IS(LL)

I

IS(LH)

t

son(IS)

t

slc(IS)

t

delay(fault)

-10-kVIN = 0 V,

I

< I

IS

IS(lim)

8.3

7.5

7.1
5

9.7

9.7

9.7
12

11

11.4

13.4
21

disabled - -

4.067.5mAVON < 1 V, typ.

4.0 5.2 7.5 mA V

> 1 V, typ.

ON

–0.10.5µAIIN = 0

–0.11µAVIN = 0, IL ≤ 0

–250500µsIL=0 20A

–50100µsIL=10 20A

350 650 1200 µs VON > 1 V, typ.

Datasheet 23 Rev. 1.0, 2008-08-28

Smart High-Side Power Switch

BTS50080-1TEA

8 Package Outlines

Package Outlines

Figure 20 PG-TO252-5-11

Green Product

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Packages”: http://www.infineon.com/packages.

Datasheet 24 Rev. 1.0, 2008-08-28

Dimensions in mm

Smart High-Side Power Switch

BTS50080-1TEA

9 Revision History

Version Date Changes

Data sheet
Rev. 1.0

2008-08-22 Initial version of data sheet.

Revision History

Datasheet 25 Rev. 1.0, 2008-08-28

Edition 2008-08-28

Published by
Infineon Technologies AG
81726 Munich, Germany

© 2008 Infineon Technologies AG

All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
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