Page 1
Smart Highside Power Switch
)
)
)
)
PROFET® BTS 442 E2
Features
•
Overload protection
•
Current limitation
•
Short-circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
•
Undervoltage and overvoltage shutdown with
1
)
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
V
bb(AZ
V
bb(on
R
ON
I
L(ISO
I
L(SCr
63 V
4.5 ... 42 V
18
21 A
70 A
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of
•
Electrostatic discharge (ESD) protection
V
protection
bb
2)
Standard
TO-220AB/5
5
Straight leads
5
1
1
SMD
Application
•
µC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
m
Ω
5
Voltage
source
V
Logic
Voltage
sensor
IN
2
ESD
4
ST
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
GND
Current
limit
unclamped
Open load
detection
Short circuit
Gate
protection
Limit for
ind. loads
detection
Temperature
sensor
1
Signal GND
1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
R
bb
PROFET
+ V
bb
OUT
Load GND
3
5
Load
Semiconductor Group 1 04.96
Page 2
BTS 442 E2
)
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3Vbb+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
O Output to the load
(Load, L)
at
T
= 25 °C unless otherwise specified
Maximum Ratings
j
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3)
Load dump protection
R
= 2 Ω,
I
R
= 1.1 Ω,
L
V
LoadDump
t
= 200 ms, IN= low or high
d
=
U
+
V
,
A
U
s
= 13.5 V
A
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
V
bb
V
Load dump
I
L
T
j
T
stg
P
tot
63 V
)
3
80 V
self-limited A
-40 ...+150
°C
-55 ...+150
167 W
Inductive load switch-off energy dissipation,
single pulse
Electrostatic discharge capability (ESD
T
=150 °C:
j
E
V
AS
ESD
2.1 J
2.0 kV
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
V
I
I
IN
ST
IN
-0.5 ... +6 V
±5.0
mA
±5.0
Thermal resistance chip - case:
junction - ambient (free air):
SMD version, device on pcb4): ≤ tbd
3)
V
Load dump
)
4
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
2
(one layer, 70µm thick) copper area for V
Semiconductor Group 2
R
R
thJC
thJA
≤ 0.75
≤ 75
K/W
bb
Page 3
BTS 442 E2
j
)
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
T
at
= 25 °C,
j
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
V
= 12 V unless otherwise specified
bb
min typ max
I
= 5 A
L
T
=25 °C:
j
T
=150 °C:
j
Nominal load current (pin 3 to 5)
ISO Proposal:
V
ON
= 0.5 V,
T
= 85 °C
C
Output current (pin 5) while GND disconnected or
GND pulled up,
T
=-40...+150°C
Turn-on time to 90%
Turn-off time to 10%
R
= 12 Ω
L
,
V
= 0, see diagram page 7,
IN
T
=-40...+150°C
j
V
V
OUT
OUT
Slew rate on
10 to 30%
OUT
R
,
= 12 Ω
L
T
=-40...+150°C
,
j
V
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12 Ω
T
=-40...+150°C
,
j
Operating Parameters
)
Operating voltage
5
Undervoltage shutdown
Undervoltage restart
T
=-40...+150°C:
j
T
=-40...+150°C:
j
T
=-40...+150°C:
j
Undervoltage restart of charge pump
see diagram page 12
T
=-40...+150°C:
j
Undervoltage hysteresis
V
∆
bb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection
I
=40 mA
bb
Standby current (pin 3)
V
=0
IN
Leakage output current (included in
IN
V
=0
Operating current (Pin 1)7),
=
V
bb(u rst)
-
V
bb(under)
)
6
V
IN
T
=-40...+150°C:
j
T
=-40...+150°C:
j
T
=-40...+150°C: ∆
j
T
=-40°C:
j
T
=25...+150°C:
j
T
=-40...+25°C
j
T
=150°C:
j
I
)
bb(off
=5 V
:
:
:
R
I
I
t
t
dV /dt
-dV/dt
V
V
V
V
∆
V
V
V
I
I
I
ON
L(ISO)
L(GNDhigh)
on
off
on
off
bb(on)
bb(under)
bb(u rst)
bb(ucp)
V
bb(under)
bb(over)
bb(o rst)
V
bb(over)
bb(AZ)
bb(off)
L(off)
GND
-- 15
28
18
35
mΩ
17 21 -- A
-- -- 1 mA
100
10
--
350
--
130
0.2 -- 2 V/µs
0.4 -- 5 V/µs
4.5 -- 42 V
2.4 -- 4.5 V
-- -- 4.5 V
-- 6.5 7.5 V
-- 0.2 -- V
42 -- 52 V
42 -- -- V
-- 0.2 -- V
60
63
--
--
67
12
18
--
-- V
25
60
-- 6 -- µA
-- 1.1 -- mA
µs
µA
)
5
At supply voltage increase up to
6)
)
7
see also
Add
V
I
, if
ST
in table of protection functions and circuit diagram page 7. Meassured without load
ON(CL)
I
> 0, add
ST
V
= 6.5 V typ without charge pump,
bb
I
V
, if
IN
>5.5 V
IN
V
OUT
≈
V
- 2 V
bb
.
Semiconductor Group 3
Page 4
BTS 442 E2
j
j
j
Parameter and Conditions Symbol Values Unit
at
T
= 25 °C,
j
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
( max 400 µs if
Repetitive short circuit current limit
T
j
Short circuit shutdown delay after input pos. slope
V
>
ON
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at
V
OUT
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation9),
T
j Start
Reverse battery (pin 3 to 1)
Integrated resistor in
V
= 12 V unless otherwise specified
bb
V
>
V
=
ON
T
(see timing diagrams, page 10)
jt
V
=
ON(SC)
V
bb
,
-
V
ON(CL)
ON(SC)
I
= 30 mA
,
L
= 150 °C, single pulse
line
V
bb
10
min typ max
)
8
,
I
L(SCp)
)
=-40°C:
T
=25°C:
T
=+150°C:
j
T
I
L(SCr)
45
--
--
95
--
140
A
--
--
--
30 70 -- A
T
=-40..+150°C:
j
)
V
V
bb
bb
= 12 V:
= 24 V:
t
d(SC)
V
ON(CL)
V
ON(SC)
T
jt
∆T
E
AS
E
Load12
E
Load24
-
V
bb
R
bb
80 -- 400
µ
-- 58 -- V
-- 8.3 -- V
150 -- -- °C
jt
-- 10 -- K
-- -- 2.1
1.7
1.2
-- -- 32 V
-- 120 --
Ω
s
J
Diagnostic Characteristics
Open load detection current
(on-condition)
)
8
Short circuit current limit for max. duration of t
9)
While demagnetizing load inductance, dissipated energy in PROFET is
V
2
= 1/
E
AS
)
10
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
these condition is dependent on the size of the heatsink. Reverse I
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
2
*
*
L
I
L
ON(CL)
* (
V
ON(CL)
of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
GND
), see diagram page 8
-
V
bb
=-40 °C
T
=25..150°C:
T
j
d(SC) max
:
I
L (OL)
2
2
=400 µs, prior to shutdown
= ∫
E
can be reduced by an additional
GND
AS
V
ON(CL)
----1900
1500
*
(t) dt, approx.
i
L
mA
Semiconductor Group 4
Page 5
BTS 442 E2
Parameter and Conditions Symbol Values Unit
at
T
= 25 °C,
j
Input and Status Feedback
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2),
V
= 12 V unless otherwise specified
bb
)
11
T
T
V
= 0.4 V
IN
=-40..+150°C:
j
=-40..+150°C:
j
V
IN(T+)
V
IN(T-)
∆
V
I
IN(off)
IN(T)
min typ max
1.5 -- 2.4 V
1.0 -- -- V
-- 0.5 -- V
1--30
µ
A
On state input current (pin 2),
V
= 3.5 V
IN
Status invalid after positive input slope
(short circuit)
T
=-40 ... +150°C:
j
Status invalid after positive input slope
(open load)
T
=-40 ... +150°C:
j
Status output (open drain)
Zener limit voltage
ST low voltage
T
=-40...+150°C,
j
T
=-40...+150°C,
j
I
I
ST
= +1.6 mA:
ST
= +1.6 mA:
I
IN(on)
t
d(ST SC)
t
d(ST)
V
ST(high)
V
ST(low)
10 25 50
80 200 400
350 -- 1600
5.4
--
6.1
--
0.4
µ
A
µ
s
µ
s
--
V
11)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Semiconductor Group 5
Page 6
Truth Table
BTS 442 E2
Input- Output Status
Normal
operation
Open load L
Short circuit
to GND
Short circuit
to V
bb
Overtemperature
Undervoltage
Overvoltage L
L = "Low" Level
H = "High" Level
Terms
I
IN
2
I
ST
V
IN
V
bb
4
V
ST
level level 442
D2
H
H
H
H
H
H
H
IN
ST
L
L
L
L
L
R
GND
I
3
V
bb
PROFET
GND
1
L
H
12
H
L
L
H
H
L
L
L
L
L
L
bb
I
GND
H
H
)
H
L
H
L
H
H (L
L
L
14)
L
14)
L
L
L
I
L
OUT
5
13)
)HH (L
V
V
OUT
ON
442
E2
H
H
H
L
H
L
13)
)
L
L
H
H
H
H
Status output
+5V
R
ST(ON)
GND
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
ST(ON)
< 250 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
ST
ESDZD
Input circuit (ESD protection)
R
IN
I
ESD-
ZD ZD
I1 I2
GND
I
I
ZDI1 6.1 V typ., ESD zener diodes are not to be used
as voltage clamp at DC conditions. Operation in this
mode may result in a drift of the zener voltage
(increase of up to 1 V).
)
12
Power Transistor off, high impedance
)
13
Low resistance short
)
14
No current sink capability during undervoltage shutdown
V
to output may be detected by no-load-detection
bb
Semiconductor Group 6
Page 7
BTS 442 E2
Short Circuit detection
Fault Condition:
Logic
unit
V
> 8.3 V typ.; IN high
ON
Short circuit
detection
+ V
OUT
bb
V
ON
Inductive and overvoltage output clamp
+ V
bb
V
Z
V
ON
OUT
GND
V
clamped to 58 V typ.
ON
Overvolt. and reverse batt. protection
+ V
bb
Open-load detection
ON-state diagnostic condition:
high
ON
Logic
unit
Open load
detection
GND disconnect
3
V
IN
2
ST
4
V
V
IN
V
ST
bb
bb
PROFET
GND
1
V
V
<
ON
GND
R
OUT
ON
I
*
; IN
L(OL)
+ V
bb
V
ON
OUT
5
R
IN
IN
V
Logic
ST
R
ST
R
GND
V
Rbb = 120 Ω typ.,
R
, RIN, RST for extended protection
GND
R
+
bb
Z
R
bb
Z
GND
PROFET
Signal GND
*40 mA = 67 V typ., add
V
OUT
≈
V
Any kind of load. In case of Input=high is
Due to V
>0, no VST = low signal available.
GND
OUT
V
-
IN
GND disconnect with GND pull up
3
V
V
IN
bb
PROFET
GND
1
V
-
IN(T+)
OUT
5
V
GND
device stays off
V
bb
V
IN
Any kind of load. If V
Due to V
>0, no VST = low signal available.
GND
2
4
V
GND
ST
IN
ST
>
V
IN(T+)
.
Semiconductor Group 7
Page 8
BTS 442 E2
Vbb disconnect with charged inductive
load
3
high
V
bb
high
IN
2
ST
4
IN
2
ST
4
V
bb
PROFET
GND
1
3
V
bb
PROFET
GND
1
OUT
OUT
5
5
Inductive Load switch-off energy
dissipation
E
bb
E
AS
V
PROFET
GND
* L *
bb
OUT
E
2
I
L
IN
=
ST
Energy dissipated in PROFET EAS = Ebb + EL - ER.
E
Load
<
E
L
1
E
,
=
/
L
2
E
E
Load
L
R
V
bb
Semiconductor Group 8
Page 9
BTS 442 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
BTS
Logic version
Overtemperature protection
15)16
T
>150 °C, latch function
j
T
>150 °C, with auto-restart on cooling
j
)
Short-circuit to GND protection
switches off when
(when first turned on after approx. 200 µs)
V
>8.3 V typ.
ON
15)
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart
Status feedback for
overtemperature
short circuit to GND
short to V
open load
undervoltage
overvoltage
bb
Status output type
CMOS
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to
V
-
V
bb
ON(CL)
Load current limit
high level
medium level
low level
(can handle loads with high inrush currents)
(better protection of application)
442D2 442E2
D E
X
X
X X
X X
X X
X X
X
X
17)
X
X
X
X
X X
X X
-
X
X
17)
X
-
-
X
)
15
Latch except when
0 V only if forced externally). So the device remains latched unless
between turn on and t
16)
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
)
17
Low resistance short
V
-
V
bb
OUT
.
d(SC)
V
to output may be detected by no-load-detection
bb
<
V
ON(SC)
after shutdown. In most cases
Semiconductor Group 9
V
= 0 V after shutdown (
bb
<
OUT
V
ON(SC)
(see page 4). No latch
V
V
OUT
≠
Page 10
Timing diagrams
BTS 442 E2
Figure 1a: V
IN
V
bb
V
OUT
ST open dr a in
in case of too early
t
approx. 150 µs
d(bb IN)
turn on:
bb
t
d(bb IN)
A
A
V
=high the device may not turn on (curve A)
IN
Figure 2b: Switching an inductive load
IN
d(ST)
t
ST
*)
V
OUT
I
L
I
t
*) if the time constant of load is too large, open-load-status may
occur
L(OL)
t
Figure 2a: Switching a lamp,
IN
ST
V
OUT
I
L
Figure 3a: Turn on into short circuit,
IN
ST
V
OUT
t
d(SC)
I
L
t
t
Semiconductor Group 10
t
approx. 200µs if
d(SC)
V
V
-
bb
> 8.3 V typ.
OUT
Page 11
BTS 442 E2
Figure 3b: Turn on into overload,
IN
I
L
I
L(SCp)
I
L(SCr)
ST
Figure 4a: Overtemperature:
T
Reset if
T
<
j
jt
IN
ST
V
OUT
T
t
J
t
Heating up may require several milliseconds,
V
V
-
bb
< 8.3 V typ.
OUT
Figure 3c: Short circuit while on:
IN
ST
V
OUT
I
L
**)
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
t
ST
d(ST)
V
OUT
I
L
open
t
**) current peak approx. 20 µs
Semiconductor Group 11
t
Page 12
BTS 442 E2
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
ST
t
d(ST O L1 )
t
d(ST O L2 )
V
OUT
I
normal
L
open
normal
Figure 6b: Undervoltage restart of charge pump
V
[V]
ON
V
V
on
ON(CL)
off
V
V
bb(o rst)
bb(over)
V
bb
off
V
bb(u rst)
V
bb(u cp)
V
bb(under)
on
t
t
d(ST OL1)
Figure 6a: Undervoltage:
= tbd µs typ., t
d(ST OL2)
IN
V
bb
V
OUT
ST open dr a in
= tbd µs typ
V
bb(under)
V
bb(u cp)
V
bb(u rst)
charge pump starts at
V
bb(ucp)
Figure 7a: Overvoltage:
IN
V
V
V
bb
OUT
ON(CL)
ST
=6.5 V typ.
V
bb(over)
V
V
bb(o rst)
bb
[V]
t
Semiconductor Group 12
t
Page 13
Package and Ordering Code
All dimensions in mm
BTS 442 E2
Standard TO-220AB/5
BTS 442 E2 Q67060-S6206-A2
Ordering code
TO-220AB/5, Option E3043
BTS 442 E2 E3043 Q67060-S6206-A3
Ordering code
SMD TO-220AB/5, Opt. E3062
BTS442E2 E3062A T&R: Q67060-S6206-A4
Ordering code
Semiconductor Group 13
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