Datasheet BTS426L1 Datasheet (Siemens)

Smart Highside Power Switch

)

PROFET® BTS 426 L1

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of

•

Electrostatic discharge (ESD) protection

1

)

V

protection

bb

Product Summary

Overvoltage protection Operating voltage

On-state resistance Load current (ISO) Current limitation

TO-220AB/5

5

Standard

Straight leads

V

bb(AZ

V

bb(on

R

ON

I

L(ISO

I

L(SCr

1

43 V

5.0 ... 34 V 60

7.0 A 16 A

5

1

SMD

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

m

Ω

5

+ V

bb

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

Short to Vbb

detection

Gate

protection

Limit for

ind. loads

Temperature

sensor

PROFET

R

O

GND

3

OUT

5

Load



1

Signal GND

Load GND

)

1

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Semiconductor Group 1 12.96

BTS 426 L1

j,

)

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

at

T

= 25 °C unless otherwise specified

Maximum Ratings

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

)

Load dump protection

)

3

R

= 2 Ω,

I

R

= 1.7 Ω,

L

2

V

LoadDump

t

= 200 ms, IN= low or high

d

=

U

+

V

A

,

s

U

= 13.5 V

A

Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C

V

bb

V

bb

V

Load dump

I

L

T

j

T

stg

P

tot

43 V 34 V

)

4

60 V

self-limited A

-40 ...+150

°C

-55 ...+150 75 W

Inductive load switch-off energy dissipation, single pulse V

= 12V,

Electrostatic discharge capability (ESD (Human Body Model

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6

T

= 150°C,

start

T

= 150°C const.

C

I

= 7.0 A, Z

L

= 24 mH, 0 Ω:

L

all other pins:

IN:

E V

V I I

AS

ESD

IN IN ST

0.74 J

1.0

kV

2.0

-10 ... +16 V ±2.0

mA

±5.0

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance chip - case:

junction - ambient (free air):

R

thJC

thJA

--

----1.67

--

SMD version, device on PCB5):34

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

)

5

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

2

(one layer, 70µm thick) copper area for V

Semiconductor Group 2

K/W

75

bb

BTS 426 L1

)

j

)

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

T

at

= 25 °C,

j

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I

= 2 A

L

Nominal load current, ISO Norm (pin 3 to 5

V

= 0.5 V,

ON

Output current (pin 5) while GND disconnected or

GND pulled up,

page 7 Turn-on time IN to 90% Turn-off time IN to 10%

R

= 12 Ω

L

Slew rate on 10 to 30% Slew rate off

70 to 40%

V

= 12 V unless otherwise specified

bb

T

= 85 °C

C

V

=30 V,

bb

T

=-40...+150°C

,

j

V V

OUT

R

,

R

,

= 12 Ω

L

= 12 Ω

L

V

= 0, see diagram

IN

T

=-40...+150°C

,

j

T

=-40...+150°C

,

j

T

=25 °C:

j

T

=150 °C:

j

V V

OUT OUT

: :

R

I I

t t

dV /dt

-dV/dt

ON

L(ISO) L(GNDhigh)

on off

on

off

min typ max

-- 50 100

60

120

mΩ

5.8 7.0

-- A

-- -- 10 mA

80 80

200 230

400 450

0.1 -- 1 V/µs

µs

Operating Parameters

)

Operating voltage

6

Undervoltage shutdown Undervoltage restart

T

j

T

j

T

Undervoltage restart of charge pump see diagram page 12

T

j

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

=40 mA

bb

=

V

bb(u rst)

-

V

bb(under)

)

7

T

j

T

j

T

j

T

j

Standby current (pin 3)

V

=0

IN

Leakage output current (included in

IN

V

=0

=-40...+150°C: =-40...+150°C:

=-40...+25°C:

T

=+150°C:

j

=-40...+150°C:

=-40...+150°C: =-40...+150°C: =-40...+150°C: ∆ =-40...+150°C:

T

=-40...+25°C

j

T

= 150°C:

j

I

)

bb(off

:

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

V

bb(AZ)

I

bb(off)

I

L(off)

5.0 -- 34 V

3.5 -- 5.0 V

-- -- 5.0

V

7.0

-- 5.6 7.0 V

-- 0.2 -- V

34 -- 43 V 33 -- -- V

-- 0.5 -- V

42 47 -- V

--

10 12

25 28

µA

-- -- 12 µA

6)

At supply voltage increase up to

7)

See also

V

ON(CL)

in table of protection functions and circuit diagram page 7.

V

= 5.6 V typ without charge pump,

bb

Semiconductor Group 3

V

OUT

≈

V

- 2 V

bb

BTS 426 L1

j

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

min typ max

Operating current (Pin 1)8),

=-40...+150°C

T

V

=5 V,

IN

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)

=-40°C:

T

=25°C:

T

=+150°C:

j

T

Repetitive short circuit shutdown current limit

T

=

T

j

(see timing diagrams, page 10)

jt

Output clamp (inductive load switch off) at

V

=

V

-

OUT

bb

V

ON(CL)

I

= 40 mA:

L

Thermal overload trip temperature Thermal hysteresis

)

Reverse battery (pin 3 to 1) Reverse battery voltage drop

= -4 A

I

L

9

(V

out

> V

bb

)

=150 °C:

T

j

Diagnostic Characteristics

Open load detection current

(on-condition)

Open load detection voltage

T

)

10

(off-condition)

T

=-40 °C

T

=25 ..150°C:

j

=-40..150°C:

j

Internal output pull down

(pin 5 to 1),

V

OUT

=5 V,

=-40..150°C

T

j

:

I

GND

I

L(SCp)

I

L(SCr)

V

ON(CL)

T

jt

∆T

jt

-

V

bb

-V

ON(rev)

I

L (OL)

V

OUT(OL)

R

O

-- 1.8 3.5 mA

21 15 11

32 25 17

43 35 24

A

-- 16 -- A

41 47 53 V

150 -- -- °C

-- 10 -- K

-- -- 32 V

20 10

--

610 --

--

850

--

750

mV

mA

234V

41030k

Ω

)

8

Add

)

9

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

10)

External pull up resistor required for open load detection in off state.

, if

I

ST

> 0, add

I

ST

, if

V

>5.5 V

IN

I

IN

Semiconductor Group 4

BTS 426 L1

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

Input and Status Feedback

Input resistance

T

=-40..150°C, see circuit page 6

j

Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2),

T

=-40..+150°C

j

V

= 12 V unless otherwise specified

bb

)

11

V

= 0.4 V,

IN

T

=-40..+150°C:

j

T

=-40..+150°C:

j

R

I

V

IN(T+)

V

IN(T-)

∆

V

I

IN(off)

IN(T)

min typ max

2.5 3.5 6 k

1.7 -- 3.5 V

1.5 -- -- V

-- 0.5 -- V

1--50

µ

Ω

A

On state input current (pin 2),

T

=-40..+150°C

j

V

= 3.5 V,

IN

Delay time for status with open load after switch off

(see timing diagrams, page 11

T

),

=-40..+150°C

j

Status invalid after positive input slope (open load)

T

=-40 ... +150°C:

j Status output (open drain) Zener limit voltage ST low voltage

T

=-40...+150°C,

j

T

=-40...+25°C,

j

T

= +150°C,

j

I

= +1.6 mA:

ST

I

= +1.6 mA:

ST

I

= +1.6 mA:

ST

I

IN(on)

t

d(ST OL4)

t

d(ST)

V

ST(high)

V

ST(low)

20 50 90

100 520 1000

-- 250 600

5.4

--

6.1

--

0.4

0.6

µ

A

µ

s

µ

s

--

V

11)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Semiconductor Group 5

BTS 426 L1

Truth Table

Input- Output Status

level level 425 L1

426 L1

Normal operation Open load L

Short circuit to V

bb

Overtemperature Undervoltage Overvoltage L

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)

L H

H L H L H L H

H

12

L

H

)

H H

H

L L L L L L

H (L

L

H (L

H H

13

)

L

14

)

15

)

H

L H H H H

Terms

V

bb

Input circuit (ESD protection)

I

bb

R

GND

3

V

bb

PROFET

GND

1

I

GND

OUT

I

5

V

L

V

ON

OUT

ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in

I

IN

2

I

ST

V

IN

4

V

ST

IN

a drift of the zener voltage (increase of up to 1 V).

R

I

ESD-ZD

I

GND

I

)

12

Power Transistor off, high impedance

)

13

with external resistor between pin 3 and pin 5

14)

An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R is used, an offset voltage at the GND and ST pins will occur and the V

)

15

Low resistance to

V

may be detected in ON-state by the no-load-detection

bb

signal may be errorious.

ST low

Semiconductor Group 6

GND

Status output

BTS 426 L1

+5V

R

ST(ON)

GND

ST

ESD-

ZD

ESD-Zener diode: 6.1 V typ., max 5 mA; R

ST(ON)

< 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Inductive and overvoltage output clamp

+ V

bb

V

Z

V

ON

Open-load detection

ON-state diagnostic condition: high

ON

Logic

unit

OFF-state diagnostic condition:

Open load

detection

V

R

<

ON

V

> 3 V typ.; IN low

OUT

I

*

; IN

L(OL)

+ V

bb

V

ON

OUT

R

EXT

OUT

PROFET

V

clamped to 47 V typ.

ON

GND

Overvolt. and reverse batt. protection

+ V

V

R

GND

Z2

PROFET

GND

Signal GND

= 150 Ω,

R

IN

R

ST

V

= 6.2 V typ.,

Z1

R

= 15 kΩ,

ST

R

I

IN

ST

V

R

= 3.5 kΩ typ.

I

Logic

Z1

= 47 V typ.,

Z2

R

GND

OFF

V

OUT

Logic

unit

bb

Open load

detection

Signal GND

R

O

GND disconnect

3

V

IN

2

ST

4

V

IN

V

ST

bb

PROFET

GND

1

V

GND

OUT

5

Semiconductor Group 7

Any kind of load. In case of Input=high is Due to V

>0, no VST = low signal available.

GND

V

OUT

≈

V

-

IN

IN(T+)

.

BTS 426 L1

GND disconnect with GND pull up

3

V

IN

bb

PROFET

GND

1

V

-

IN(T+)

OUT

5

V

GND

device stays off

V

bb

Any kind of load. If V Due to V

V

IN

>0, no VST = low signal available.

GND

2

V

4

ST

GND

IN

ST

>

Vbb disconnect with energized inductive load

3

high

IN

2

ST

4

V

bb

PROFET

GND

1

OUT

5

Inductive Load switch-off energy dissipation

E

bb

E

AS

V

+ |V

E

bb

PROFET

GND

1

=

/

L

2

OUT(CL)

·L·

I

|)·

OUT

2 L

ON(CL)

> 0

L

ln

(1+

Z

L

·

Ω

L

{

R

L

iL(t) dt,

:

·

I

R

L

|V

OUT(CL)

L

IN

=

ST

Energy stored in load inductance:

While demagnetizing load inductance, the energy dissipated in PROFET is

E

= Ebb + EL - ER= ∫ V

AS

with an approximate solution for R

·

I

L

=

·

(

V

bb

·

R

2

L

E

AS

E

|

E

)

Load

L

R

V

bb

Normal load current can be handled by the PROFET itself.

Vbb disconnect with charged external inductive load

S

3

high

V

bb

If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.

IN

2

ST

4

V

bb

PROFET

GND

1

OUT

5

D

Semiconductor Group 8

BTS 426 L1

Maximum allowable load inductance for a single switch off

L = f (I

V

=

bb

L

[mH]

10000

1000

100

);

L

12 V,

10

T

j,start

R

L

=

150°C,

=

Ω

0

T

150°C const.,

=

C

Transient thermal impedance chip ambient air

= f(tp)Z

Z

thJA

100

10

1

0.1

1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3

thJA

[K/W]

D=

0.5

0.2

0.1

0.05

0.02

0.01 0

1

2 7 12 17

Typ. transient thermal impedance chip case

Z

thJC

0.1

= f(tp)Z

10

1

thJC

[K/W]

D=

0.5

0.2

0.1

0.05

0.02

0.01 0

I

L

[A]

t

[s]

p

0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

t

[s]

p

Semiconductor Group 9

Timing diagrams

BTS 426 L1

Figure 1a: V

turn on:

bb

IN

V

bb

V

OUT

ST open drain

proper turn on under all conditions

Figure 2a: Switching a lamp,

Figure 2b: Switching an inductive load

IN

t

ST

V

OUT

I

L

I

t

*) if the time constant of load is too large, open-load-status may occur

L(OL)

d(ST)

*)

t

IN

ST

V

I

OUT

L

Figure 3a: Short circuit shut down by overtempertature, reset by cooling

IN

I

L

I

L(SCp)

I

L(SCr)

t

ST

t

Semiconductor Group 10

Heating up may require several milliseconds, depending on external conditions

BTS 426 L1

Figure 4a: Overtemperature:

T

Reset if

T

<

j

jt

IN

ST

V

OUT

T

J

Figure 5b: Open load: detection in ON-state, open load occurs in on-state

IN

t

d(ST OL1)

ST

V

OUT

I

normal

L

open

t

d(ST OL2)

normal

t

Figure 5a: Open load: detection in ON-state, turn on/off to open load

IN

ST

t

d(ST)

t

d(ST OL4)

V

OUT

I

L

open

t

d(ST OL1)

= 20 µs typ., t

d(ST OL2)

= 10 µs typ

Figure 5c: Open load: detection in ON- and OFF-state (with R

), turn on/off to open load

EXT

IN

ST

V

OUT

t

d(ST)

I

L

open

t

The status delay time t the failure modes "open load" and "overtemperature".

d(ST OL4)

allows to ditinguish between

Semiconductor Group 11

Figure 6a: Undervoltage:

BTS 426 L1

Figure 7a: Overvoltage:

IN

V

bb

V

bb(u cp)

V

bb(u rst)

V

OUT

V

bb(under)

ST open drain

Figure 6b: Undervoltage restart of charge pump

V

on

ON(CL)

IN

V

bb

V

OUT

ON(CL)

V

bb(over)

V

bb(o rst)

ST

t

V

off-state

V

bb(u rst)

V

bb(under)

charge pump starts at

V

bb(u cp)

V

bb(ucp)

on-state

=5.6 V typ.

bb(over)

V

bb(o rst)

off-state

V

bb

Semiconductor Group 12

Package and Ordering Code

)

All dimensions in mm

BTS 426 L1

Standard TO-220AB/5

BTS426L1 Q67060-S6108-A2

TO-220AB/5, Option E3043

BTS426L1 E3043 Q67060-S6108-A3

Ordering code

SMD TO-220AB/5, Opt. E3062

BTS426L1 E3062A T&R: Q67060-S6108-A4

Ordering code

Changed since 04.96

Date Change Dec

1996

t

d(ST OL4

to 800µs, typical from 400 to 320µ

E

AS

max reduced from 1500

s, min limit unchanged

maximum rating and diagram

added Z

th specification added

Typ. reverse battery voltage drop V

ON(rev) added

Components used in life-support devices or systems must be expressly authorised for such purpose!

of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems approval of the Semiconductor Group of Siemens AG.

16)

A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

17)

Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.

Critical components

)

17

with the express written

16

)

Semiconductor Group 13