Datasheet BTS410G2 Datasheet (Siemens)

Smart Highside Power Switch

)

PROFET® BTS 410 G2

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of

•

Electrostatic discharge (ESD) protection

1

)

V

protection

bb

Product Summary

Overvoltage protection Operating voltage

On-state resistance Load current (ISO) Current limitation

TO-220AB/5

5

Standard

Straight leads

V

bb(AZ

V

bb(on

R

ON

I

L(ISO

I

L(SCr

1

65 V

4.7 ... 42 V 220

1.8 A

2.7 A

5

1

SMD

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

•

Most suitable for inductive loads

•

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

m

Ω

5

+ V

bb

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

detection

Gate

protection

Limit for

ind. loads

Temperature

sensor

PROFET

3

OUT

5

Load



1

Signal GND

Load GND

)

1

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistors in series with IN and ST

GND

connections, reverse load current limited by connected load.

Semiconductor Group 1 03.97

BTS 410 G2

j,

)

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

at

T

= 25 °C unless otherwise specified

Maximum Ratings

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3)

)

Load dump protection

)

3

R

= 2 Ω,

I

R

= 6.6 Ω,

L

2

V

LoadDump

t

= 400 ms, IN= low or high

d

=

U

+

V

A

,

s

U

= 13.5 V

A

Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C

V

bb

V

Load dump

I

L

T

j

T

stg

P

tot

65 V

)

4

100 V

self-limited A

-40 ...+150

°C

-55 ...+150 50 W

Inductive load switch-off energy dissipation, single pulse V

= 12V,

Electrostatic discharge capability (ESD (Human Body Model

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6

T

= 150°C,

start

T

= 150°C const.

C

I

= 1.8 A, Z

L

= 2.3 H, 0 Ω:

L

all other pins:

IN:

E V

V I I

AS

ESD

IN IN ST

4.5 J 1

kV

2

-0.5 ... +6 V ±5.0

mA

±5.0

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance chip - case:

junction - ambient (free air):

R

thJC

thJA

--

SMD version, device on PCB5):--35--

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

)

5

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

2

(one layer, 70µm thick) copper area for V

Semiconductor Group 2

2.5 75

K/W

bb

BTS 410 G2

)

j

)

j

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

T

at

= 25 °C,

j

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I

= 1.6 A

L

Nominal load current, ISO Norm (pin 3 to 5

V

= 0.5 V,

ON

Output current (pin 5) while GND disconnected or

GND pulled up,

page 7, Turn-on time IN to 90% Turn-off time IN to 10%

R

= 12 Ω

L

Slew rate on 10 to 30% Slew rate off

70 to 40%

V

= 12 V unless otherwise specified

bb

T

= 85 °C

C

V

bb

T

=-40...+150°C

T

=-40...+150°C

,

j

V V

OUT

R

,

R

,

= 12 Ω

L

=30 V,

= 12 Ω

V

IN

T

=-40...+150°C

,

j

T

=-40...+150°C

,

j

T

=25 °C:

j

T

=150 °C:

j

= 0, see diagram

V

OUT

V

OUT

: :

R

I I

t t

dV /dt

-dV/dt

ON

L(ISO) L(GNDhigh)

on off

on

off

min typ max

-- 190 390

220 440

mΩ

1.6 1.8 -- A

-- -- 1 mA

12

5

--

125

--

85

-- -- 3 V/µs

-- -- 6 V/µs

µs

Operating Parameters

Operating voltage

6

T

j

)

Undervoltage shutdown

T

j

Undervoltage restart

T

j

Undervoltage restart of charge pump see diagram page 11

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

=4 mA

bb

=

V

bb(u rst)

-

V

bb(under)

)

7

T

j

T

j

T

j

T

j

Standby current (pin 3)

V

=0

IN

Leakage output current (included in

IN

V

=0

Operating current (Pin 1)8),

=-40...+150°C

T

)

6

At supply voltage increase up to

7)

Meassured without load. See also

V

=5 V,

IN

V

= 5.6 V typ without charge pump,

bb

V

ON(CL)

:

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

V

bb(AZ)

I

bb(off)

I

L(off)

I

GND

V

4.7 -- 42 V

2.9

2.7

--

-- -- 4.9 V

-- 5.6 6.0 V

-- 0.1 -- V

42 -- 52 V 40 -- -- V

-- 0.1 -- V

65 70 -- V

--

10 18

-- -- 20 µA

-- 1 2.1 mA

≈

V

OUT

bb

- 2 V

=-40...+150°C:

T

=25°C:

j

=-40...+150°C: =-40...+150°C:

=-40...+150°C: =-40...+150°C: =-40...+150°C: ∆ =-40...+150°C:

T

=-40...+25°C

j

T

= 150°C:

j

I

)

bb(off

in table of protection functions and circuit diagram page 6.

4.5

4.7

15 25

V

µA

Semiconductor Group 3

BTS 410 G2

j

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)

Repetitive short circuit shutdown current limit

T

=

j

Output clamp (inductive load switch off) at

V

OUT

Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1)

Diagnostic Characteristics

Open load detection current

(on-condition)

V

= 12 V unless otherwise specified

bb

T

(see timing diagrams, page 10)

jt

=

V

-

bb

V

ON(CL)

I

= 40 mA,

L

I

= 1 A,

L

min typ max

I

L(SCp)

=-40°C:

T

=25°C:

T

=+150°C:

j

T

I

L(SCr)

4.0

3.5

2.0

5.5

3.5

--

11

A

10

7.5

-- 2.7 -- A

T

=-40..+150°C:

j

T

=-40..+150°C: -- -- 75

j

)

9

=-40 ..150°C:

T

j

V

ON(CL)

T

jt

∆T

-

V

I

L (OL)

bb

61 68 73 V

150 -- -- °C

jt

-- 10 -- K

-- -- 32 V

mA

2 -- 150

)

Input and Status Feedback

Input turn-on threshold voltage Input turn-off threshold voltage

10

T

=-40..+150°C:

j

T

=-40..+150°C:

j

Input threshold hysteresis Off state input current (pin 2), On state input current (pin 2),

V

= 0.4 V

IN

V

= 5 V

IN

Status invalid after positive input slope (open load)

T

=-40 ... +150°C:

j Status output (open drain) Zener limit voltage ST low voltage

T

=-40...+150°C,

j

T

=-40...+150°C,

j

I

ST

I

= +50 uA:

ST

= +1.6 mA:

V

IN(T+)

V

IN(T-)

∆

V

I

IN(off)

I

IN(on)

t

d(ST)

V

ST(high)

V

ST(low)

IN(T)

1.5 -- 2.4 V

1.0 -- -- V

-- 0.5 -- V 1--30

10 25 70

µ µ

300 -- 1400

5.0

--

6

--

0.4

A A

µ

s

V

)

8 9

10)

)

I

ST

, if

I

> 0, add

ST

Add Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 6). If a ground resistor R

I

V

, if

IN

is used, add the voltage drop across this resistor.

GND

>5.5 V

IN

Semiconductor Group 4

Truth Table

BTS 410 G2

Input- Output Status

level level 412

Normal operation Open load L

Short circuit to GND Short circuit to V

bb

Overtemperature Undervoltage Overvoltage L

B2

L H

H L H L H L H L H

H

11

L

H

)

H

L

L H H

L

H H

L H H

L

L H

L

13)

L

13)

L

410

D2

H (L

L L

H H H

L

H

L

H

12)

L L

13)

L L

410

E2/F2

)HH (L

H H H

L

H

L

12)

L

L H H H H

410

G2

)HH (L

410

H2

H H H L H H

H H

L H H

L

12)

) L L H H H H

H

L

L H H H H

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11)

)

11

Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection.

)

12

Low resistance short

)

13

No current sink capability during undervoltage shutdown

V

to output may be detected in ON-state by the no-load-detection

bb

Semiconductor Group 5

BTS 410 G2

Terms

I

bb

R

GND

3

V

bb

PROFET

GND

1

I

GND

OUT

I

V

L

5

V

ON

OUT

I

IN

2

I

ST

V

IN

V

bb

4

V

ST

Input circuit (ESD protection)

R

IN

I

ESD-

ZD ZD

I1 I2

GND

I

ZDI1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Status output

Inductive and overvoltage output clamp

+ V

bb

V

Z

V

ON

OUT

PROFET

V

clamped to 68 V typ.

ON

GND

Overvolt. and reverse batt. protection

+ V

bb

V

R

IN

R

ST

V

= 6.2 V typ.,

Z1

R

= 15 k

ST

IN

Logic

ST

V

Z1

V

= 70 V typ.,

Z2

Ω

Z2

PROFET

GND

R

GND

Signal GND

R

= 150 Ω, RIN,

GND

+5V

R

ST(ON)

GND

ST

ESD-

ZD

ESD-Zener diode: 6 V typ., max 5 mA; R

ST(ON)

< 250 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Open-load detection

ON-state diagnostic condition: high

ON

Logic

unit

Open load

detection

I

V

<

ON

*

R

ON

L(OL)

+ V

OUT

; IN

bb

V

ON

Semiconductor Group 6

BTS 410 G2

GND disconnect

3

V

IN

2

ST

4

V

bb

Any kind of load. In case of Input=high is Due to V

V

IN

ST

>0, no VST = low signal available.

GND

bb

PROFET

GND

1

V

GND

V

OUT

5

V

≈

-

IN

GND disconnect with GND pull up

3

V

IN

bb

PROFET

GND

1

V

-

IN(T+)

OUT

5

V

GND

device stays off

V

bb

Any kind of load. If V Due to V

V

IN

>0, no VST = low signal available.

GND

2

V

4

ST

GND

IN

ST

>

V

IN(T+)

Vbb disconnect with charged external inductive load

S

3

high

V

bb

.

If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.

IN

2

ST

4

V

bb

PROFET

GND

1

OUT

5

D

Inductive Load switch-off energy dissipation

E

bb

E

AS

E

Load

L

R

V

IN

=

ST

bb

PROFET

GND

OUT

L

Z

{

R

L

Vbb disconnect with energized inductive load

3

high

V

bb

IN

2

ST

4

Normal load current can be handled by the PROFET itself.

V

bb

PROFET

GND

1

OUT

5

Energy stored in load inductance:

E

·L·

=

L

I

/

2

L

2

1

While demagnetizing load inductance, the energy dissipated in PROFET is

E

= Ebb + EL - ER= ∫ V

AS

with an approximate solution for R

·

I

L

=

·

(

V

+ |V

bb

OUT(CL)

·

R

2

L

|)·

E

AS

ON(CL)

> 0

L

ln

(1+

·

iL(t) dt,

Ω:

I

|V

OUT(CL)

·

R

L

)

|

Semiconductor Group 7

BTS 410 G2

Maximum allowable load inductance for a single switch off

L = f (I

V

=

bb

L

[mH]

10000

1000

);

L

12 V,

T

j,start

R

L

=

150°C,

=

Ω

0

T

150°C const.,

=

C

Typ. transient thermal impedance chip case

= f(tp, D), D=tp/T

Z

thJC

Z

[K/W]

thJC

10

1

D=

0.5

0.1

0.2

0.1

0.05

0.02

0.01 0

100

1.5 1.75 2 2.25 2.5 2.75 3

I

L

[A]

0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

t

[s]

p

Semiconductor Group 8

BTS 410 G2

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 Ω in GND connection, protection against loss of ground

Type

BTS

Logic version Overtemperature protection with hysteresi s

14)15

T

>150 °C, latch function

j

T

>150 °C, with auto-restart on cooling

j

)

Short circuit to GND protection

switches off when

)

14

(when first turned on after approx. 150 µs)

typ switches off when

(when first turned on after approx. 150 µs) Achieved through overtemperature protection

V

>3.5 V typ. and

ON

V

>8.5 V typ.

ON

14)

V

bb

> 7 V

Open load detection

in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across

power transistor

Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart

16

Status feedback for

overtemperature short circuit to GND short to V open load undervoltage overvoltage

bb

Status output type

CMOS Open drain

Output negative voltage transient limit

(fast inductive load switch off)

to

V

-

V

bb

ON(CL)

Load current limit

high level low level

(can handle loads with high inrush currents)

(better protection of application)

Protection against loss of GND

412 B2 410D2 410E2 410F2 410G2 410H2 307 308

BDEFGH

XX

X

XXXX

X

XXXX

XXXXXXXX

)

XXXXXX-X

-

X X

17)

X X X

X X

17

X

-

XXXXXX

X X X X X X

XX

XXXXXXXX

XXX

XXXXXXXX

X

X X

17)

)

X

-

XXXXX

-

X

-

17)

X

-

X

XX

X

XXX

X X X X

-

X X X X X

-

X

X X X X

-

)

14

Latch except when 0 V only if forced externally). So the device remains latched unless

between turn on and t

15)

With latch function. Reseted by a) Input low, b) Undervoltage

)

16

No auto restart after overvoltage in case of short circuit

)

17

Low resistance short

V

-

bb

OUT

.

d(SC)

V

to output may be detected in ON-state by the no-load-detection

bb

<

V

ON(SC)

after shutdown. In most cases

Semiconductor Group 9

V

bb

<

= 0 V after shutdown (

OUT

V

(see page 4). No latch

ON(SC)

V

OUT

≠

Timing diagrams

BTS 410 G2

Figure 1a: V

turn on:

bb

IN

V

bb

V

OUT

ST open drain

proper turn on under all conditions

Figure 2a: Switching an inductive load

Figure 3a: Turn on into overload, Short circuit

shut down by overtempertature, reset by cooling

IN

I

L

I

L(SCp)

I

L(SCr)

ST

t

Heating up may require several seconds, depending on external conditions

t

IN

t

ST

V

OUT

I

L

I

L(OL)

*) if the time constant of load is too large, open-load-status may occur

d(ST)

*)

Figure 4a: Overtemperature:

T

Reset if

T

<

j

jt

IN

ST

V

OUT

T

t

J

t

Semiconductor Group 10

BTS 410 G2

Figure 5a: Open load: detection in ON-state, turn

on/off to open load

IN

t

ST

V

I

OUT

L

d(ST)

open

Figure 6a: Undervoltage:

IN

V

bb

V

OUT

ST open drain

t

V

bb(under)

V

bb(u cp)

V

bb(u rst)

t

Figure 5b: Open load: detection in ON-state, open load occurs in on-state

IN

ST

V

I

OUT

L

t

d(ST OL1)

normal

open

t

d(ST OL2)

normal

Figure 6b: Undervoltage restart of charge pump

V

bb(over)

ON(CL)

off-state

V

bb

V

on

V

off-state

V

bb(u rst)

V

bb(under)

t

charge pump starts at

bb(u cp)

V

bb(ucp)

on-state

V

bb(o rst)

=5.6 V typ.

t

d(ST OL1)

= tbd µs typ., t

d(ST OL2)

= tbd µs typ

Semiconductor Group 11

Figure 7a: Overvoltage:

IN

BTS 410 G2

V

bb

OUT

V

ON(CL)

V

bb(over)

V

bb(o rst)

ST

Figure 9a: Overvoltage at short circuit shutdown:

IN

t

V

bb

V

bb(o rst)

Output short to GND

V

OUT

short circuit shutdown

I

L

ST

Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown.

t

Semiconductor Group 12

Package and Ordering Code

All dimensions in mm

BTS 410 G2

Standard TO-220AB/5

BTS 410 G2 Q67060-S6104-A2

Ordering code

SMD TO-220AB/5, Opt. E3062

BTS410G2 E3062A T&R: Q67060-S6104-A4

Ordering code

TO-220AB/5, Option E3043

BTS 410 G2 E3043 Q67060-S6104-A3

Ordering code

Semiconductor Group 13