Datasheet BTS410E2E3062 Specification

PROFET

Smart Highside Power Switch

®

BTS 410 E2

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

1

)

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

protection

bb

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays, fuses and discrete circuits

Product Summary Overvoltage protection V Operating voltage

V

65 V

bb(AZ)

4.7 ... 42 V

bb(on)

On-state resistance RON 220 Load current (ISO) I Current limitation I

1.8 A

L(ISO)

5A

L(SCr)

TO-220AB/5

Standard

5

Straight leads

5

1

SMD

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS



technology. Providing embedded protective functions.

mΩ

5

+ V

bb

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

Short circuit

Gate

protection

Limit for

ind. loads

detection

Temperature

sensor

PROFET

3

OUT

5

Load



1

Signal GND

Load GND

1)

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistors in series with IN and ST

GND

connections, reverse load current limited by connected load.

Semiconductor Group 1 of 16 2003-Oct-01

BTS 410 E2

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Vbb 65 V

4

Load dump protection2) V

3)

R

= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high

I

LoadDump

= UA + Vs, UA = 13.5 V

V

Load dump

)

100 V

Load current (Short circuit current, see page 4) IL self-limited A Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C P Inductive load switch-off energy dissipation, single pulse

V

= 12V, T

bb

= 150°C, TC = 150°C const.

j,start

IL = 1.8 A, ZL = 2.3 H, 0 Ω: Electrostatic discharge capability (ESD) IN:

(Human Body Model) all other pins:

Tj T

stg

50 W

tot

-40 ...+150

-55 ...+150

°C

EAS 4.5 J V

1

ESD

kV

2

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) VIN -0.5 ... +6 V Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6

Thermal Characteristics

IIN I

ST

±5.0 ±5.0

mA

Parameter and Conditions Symbol Values Unit

min typ max Thermal resistance chip - case:

junction - ambient (free air):

SMD version, device on PCB5):

2)

Supply voltages higher than V

150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

RI = internal resistance of the load dump test pulse generator

4)

V

Load dump

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

bb(AZ)

require an external current limit for the GND and status pins, e.g. with a

R

thJC

R

thJA

2

(one layer, 70µm thick) copper area for Vbb

--

-- 35 --

2.5

K/W

75

Semiconductor Group 2 2003-Oct-01

BTS 410 E2 Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5) IL = 1.6 A Tj=25 °C:

RON

min typ max

-- 190

220

mΩ Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5)

VON = 0.5 V, TC = 85 °C

Output current (pin 5) while GND disconnected or

I

L(ISO)

I

L(GNDhigh)

1.6

-- -- 1 mA GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150°C

Turn-on time IN to 90% V Turn-off time IN R

= 12 Ω, Tj =-40...+150°C

L

to 10% V

Slew rate on 10 to 30% V

OUT

, R

= 12 Ω, Tj =-40...+150°C

L

Slew rate off 70 to 40% V

, RL = 12 Ω, Tj =-40...+150°C

OUT

OUT OUT

:

ton

:

t

off

dV /dton -- -- 3 V/µs

-dV/dt

-- -- 6 V/µs

off

12

5

Operating Parameters

Operating voltage 6) Tj =-40...+150°C: V Undervoltage shutdown Tj =25°C:

V

Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: V Undervoltage restart of charge pump

V

4.7 -- 42 V

bb(on) bb(under)

2.9

2.7

-- -- 4.9 V

bb(u rst)

-- 5.6 6.0 V

bb(ucp)

see diagram page 13 Undervoltage hysteresis

∆V

bb(under)

= V

bb(u rst)

- V

bb(under)

Overvoltage shutdown Tj =-40...+150°C: V Overvoltage restart Tj =-40...+150°C: V Overvoltage hysteresis Tj =-40...+150°C: ∆V Overvoltage protection

7)

Tj =-40...+150°C:

∆V

bb(over) bb(o rst)

V

bb(AZ)

bb(under)

-- 0.1 -- V

42 -- 52 V 40 -- -- V

-- 0.1 -- V

bb(over)

65 70 -- V Ibb=4 mA Standby current (pin 3) T VIN=0 T

Leakage output current (included in I

VIN=0

Operating current (Pin 1)8), VIN=5 V,

=-40...+150°C

Tj

6)

At supply voltage increase up to V

7)

Meassured without load. See also V

=-40...+25°C:

j

= 150°C:

j

)

bb(off)

= 5.6 V typ without charge pump, V

bb

in table of protection functions and circuit diagram page 7.

ON(CL)

I

bb(off)

I

-- -- 20 µA

L(off)

-- 1 2.1 mA

I

GND

--

≈Vbb - 2 V

OUT

390

440

1.8 -- A

--

125

--

10 18

85

4.5

4.7

15 25

µA

µs

V

Semiconductor Group 3 2003-Oct-01

BTS 410 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

min typ max

Protection Functions9)

Initial peak short circuit current limit (pin 3 to 5) ( max 450 µs if VON > V

T

ON(SC)

)

Tj =25°C: Tj =+150°C:

Repetitive overload shutdown current limit I

10)

=-40°C:

j

,

I

9

L(SCp)

--

-4

L(SCr)

12

--

VON= 8 V, Tj = Tjt (see timing diagrams, page 11) -- 5 -- A

Short circuit shutdown delay after input pos. slope V

ON

> V

, Tj =-40..+150°C:

ON(SC)

t

d(SC)

--

-- 450 µs

min value valid only, if input "low" time exceeds 60 µs Output clamp (inductive load switch off)

at V

I

= Vbb - V

OUT

ON(CL)

I

= 40 mA, Tj =-40..+150°C: V

L

= 1 A, Tj =-40..+150°C: -- -- 75

L

Short circuit shutdown detection voltage (pin 3 to 5) V

ON(CL)

ON(SC)

61

--

68 73 V

8.5 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis Reverse battery (pin 3 to 1)

11)

-Vbb -- -- 32 V

∆

Tjt -- 10 -- K

Diagnostic Characteristics

Open load detection current

(on-condition) Tj=-40 ..150°C:

I

L (OL)

2

-- 150

23 15

A

--

mA

8)

Add I

9)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

10)

Short circuit current limit for max. duration of t

11)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

, if IST > 0, add IIN, if VIN>5.5 V

ST

d(SC) max

=450 µs, prior to shutdown

Semiconductor Group 4 2003-Oct-01

BTS 410 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Input and Status Feedback

12)

Input turn-on threshold voltage Tj =-40..+150°C: V Input turn-off threshold voltage Tj =-40..+150°C: V Input threshold hysteresis ∆ V Off state input current (pin 2), VIN = 0.4 V I On state input current (pin 2), VIN = 5 V I Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope (open load) Tj=-40 ... +150°C:

min typ max

1.5 -- 2.4 V

IN(T+)

1.0 -- -- V

IN(T-)

-- 0.5 -- V

IN(T)

1 -- 30 µA

IN(off)

10 25 70 µA

IN(on)

t

d(ST SC)

-- -- 450 µs

t

d(ST)

300 -- 1400 µs

Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +50 uA: ST low voltage Tj =-40...+150°C, IST = +1.6 mA:

V

ST(high)

V

ST(low)

5.0

--

6

--

0.4

--

V

12)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Semiconductor Group 5 2003-Oct-01

BTS 410 E2

Truth Table

Normal operation Open load L

Short circuit to GND Short circuit to V

bb

Overtemperature Undervoltage

Input- Output

level 412

level

L

H

H L

H L H

L H L H

L

H

13

H

L

L H H

L

Overvoltage L H L

L

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)

Status

410

B2

H H

)

L

H H

L L

H

L L

15)

L

15)

L

L L

D2

H (L

L L

H H H

L

H

L

H

L L

15)

L L

14)

410

E2/F2

H H H L

H L

410

G2

H H H L

H H

H

14)

H (L

)

) H H (L

L L H H

H H

14)

L L H H

H H

410

H2

H H

L

H H

L L

)

H

L

L H H

H H

Terms

V

bb

Input circuit (ESD protection)

I

bb

R

GND

3

V

bb

PROFET

GND

1

I

GND

OUT

I

V

L

5

V

ON

OUT

ZD

I1

voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

I

IN

2

I

ST

V

IN

4

V

ST

IN

6 V typ., ESD zener diodes are not to be used as

R

I

ESD-

ZD ZD

I1 I2

GND

I

13)

Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for

open load detection.

14)

Low resistance short V

15)

No current sink capability during undervoltage shutdown

to output may be detected in ON-state by the no-load-detection

bb

Semiconductor Group 6 2003-Oct-01

BTS 410 E2

Status output

R

ST(ON)

GND

ESD-Zener diode: 6 V typ., max 5 mA; R

ST(ON)

< 250 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

+5V

ST

ESD-

ZD

Short circuit detection

Fault Condition: VON > 8.5 V typ.; IN high

+ V

bb

Overvolt. and reverse batt. protection

+ V

V

R

IN

Logic

ST

R

ST

V

Z1

= 6.2 V typ., VZ2 = 70 V typ., R

V

Z1

R

= 15 kΩ

ST

Z2

PROFET

GND

R

GND

Signal GND

= 150 Ω, RIN,

GND

Open-load detection

ON-state diagnostic condition: VON < R high

ON

* I

L(OL)

+ V

; IN

bb

V

ON

OUT

Logic

unit

Short circuit

detection

Inductive and overvoltage output clamp

V

Z

GND

PROFET

+ V

OUT

bb

V

ON

V

clamped to 68 V typ.

ON

Logic

unit

GND disconnect

IN

2

ST

4

V

IN

V

ST

bb

Open load

detection

3

V

PROFET

GND

1

bb

V

GND

OUT

V

ON

OUT

5

Any kind of load. In case of Input=high is V Due to V

>0, no VST = low signal available.

GND

OUT

≈ VIN - V

IN(T+)

.

Semiconductor Group 7 2003-Oct-01

BTS 410 E2

GND disconnect with GND pull up

3

V

PROFET

GND

- V

IN

bb

1

V

GND

device stays off

IN(T+)

OUT

5

V

bb

Any kind of load. If V Due to V

V

IN

>0, no VST = low signal available.

GND

2

V

4

ST

GND

IN

ST

> V

Vbb disconnect with energized inductive load

3

high

V

bb

IN

2

ST

4

V

bb

PROFET

GND

1

OUT

5

Normal load current can be handled by the PROFET itself.

Vbb disconnect with charged external inductive load

Inductive Load switch-off energy dissipation

E

bb

E

AS

V

IN

=

ST

bb

PROFET

GND

OUT

L

{Z

R

L

Energy stored in load inductance:

2

1

/

=

·L·I

E

L

2

L

While demagnetizing load inductance, the energy dissipated in PROFET is

= Ebb + EL - ER= V

E

AS

with an approximate solution for R

· L

I

AS

=

L

·(V

+ |V

bb

·R

2

L

OUT(CL)

|)· ln (1+

E

ON(CL)·iL

L

> 0 Ω:

|V

(t) dt,

I

L·RL

OUT(CL)

Maximum allowable load inductance for a single switch off

L = f (I

V L [mH]

12 V, R

=

bb

10000

L

); T

j,start

L

150°C,T

=

0 Ω

=

150°C const.,

=

C

E

|

E

)

Load

L

R

S

3

high

V

bb

If other external inducti ve loads L are connected to the PROFE T , additional elements lik e D are necessary.

IN

2

ST

4

V

bb

PROFET

GND

1

OUT

5

D

1000

100

10

1

123456

IL [A]

Semiconductor Group 8 2003-Oct-01

BTS 410 E2

Typ. transient thermal impedance chip case

Z

= f(tp, D), D=tp/T

thJC

Z

[K/W]

thJC

10

1

D=

0.5

0.1

0.2

0.1

0.05

0.02

0.01 0

0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

tp [s]

Semiconductor Group 9 2003-Oct-01

BTS 410 E2

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 Ω in GND connection, protection against loss of ground

Type BTS Logic version

412 B2 410D2 410E2 410F2 410G2 410H2 307 308

B D E F G H

Overtemperature protection with hysteresi s

16)17

Tj >150 °C, latch function Tj >150 °C, with auto-restart on cooling

)

X X

X

Short circuit to GND protection

switches off when VON>3.5 V typ. and Vbb> 7 V

)

16

typ

(when first turned on after approx. 150 µs)

switches off when VON>8.5 V typ. (when first turned on after approx. 150 µs)

Achieved through overtemperature protection

16)

X X

X X X X

X

Open load detection

in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across

power transistor

Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart

18)

X

X X X X X X X X X X X X X X - X

X

X X X

Status feedback for

overtemperature short circuit to GND short to V open load undervoltage overvoltage

bb

X X X X X X

-

X X

19)

X X X

X X

19)

X

-

X X

19)

X

-

X

-

19)

X

-

X X X X

-

X X X X X

-

X X X X

-

Status output type

CMOS Open drain

Output negative voltage transient limit

X X

X

(fast inductive load switch off)

to Vbb - V

ON(CL)

X X X X X X X X

Load current limit

high level (can handle loads with high inrush currents) low level (better protection of application)

X X X

X

Protection against loss of GND X X X X X X X X

16)

Latch except when 0 V only if forced externally). So the device remains latched unless

between turn on and t

17)

With latch function. Reseted by a) Input low, b) Undervoltage

18)

No auto restart after overvoltage in case of short circuit

19)

Low resistance short V

V

-V

bb

d(SC)

bb

< V

OUT

.

to output may be detected in ON-state by the no-load-detection

after shutdown. In most cases

ON(SC)

V

bb

VOUT

< V

ON(SC)

= 0 V after shutdown (V

(see page 4). No latch

OUT

≠

Semiconductor Group 10 2003-Oct-01

BTS 410 E2

Timing diagrams

Figure 1a: Vbb turn on:

IN

t

V

bb

V

OUT

ST open drain

in case of too early VIN=high the device may not turn on (curve A) t

approx. 150 µs

d(bb IN)

Figure 2a: Switching a lamp,

d(bb IN)

A

Figure 2b: Switching an inductive load

IN

t

ST

V

OUT

I

L

I

L(OL)

d(ST)

*)

t

*) if the time constant of load is too large, open-load-status may occur

Figure 3a: Turn on into short circuit,

t

IN

ST

V

OUT

V

OUT

I

L

t

d(SC)

I

L

t

approx. -- µs if Vbb - V

d(SC)

> 8.5 V typ.

OUT

Semiconductor Group 11 2003-Oct-01

BTS 410 E2

Figure 4a: Overtemperature:

IN

<Tjt

j

Figure 3b: Turn on into overload,

IN

Reset if T

I

L

I

L(SCp)

I

L(SCr)

ST

Heating up may require several seconds,

V

- V

bb

< 8.5 V typ.

OUT

Figure 3c: Short circuit while on:

IN

ST

V

OUT

T

J

t

Figure 5a: Open load: detection in ON-state, turn on/off to open load

IN

t

ST

V

OUT

I

L

**) current peak approx. 20 µs

**)

t

ST

V

I

OUT

L

d(ST)

open

t

Semiconductor Group 12 2003-Oct-01

BTS 410 E2

Figure 5b: Open load: detection in ON-state, open

load occurs in on-state

IN

Figure 6b: Undervoltage restart of charge pump

V

on

ON(CL)

t

d(ST OL1)

ST

V

OUT

normal

L

= tbd µs typ., t

d(ST OL2)

t

d(ST OL1)

I

Figure 6a: Undervoltage:

open

= tbd µs typ

t

d(ST OL2)

normal

off-state

V

bb(under)

t

charge pump starts at V

Figure 7a: Overvoltage:

IN

V

bb(u rst)

V

bb(u cp)

bb(ucp)

V

bb(o rst)

bb(over)

on-state

=5.6 V typ.

off-state

V

bb

IN

V

ST open drain

bb

OUT

V

bb(under)

V

bb(u cp)

V

bb(u rst)

V

bb

OUT

V

ON(CL)

V

bb(over)

V

bb(o rst)

ST

t

Semiconductor Group 13 2003-Oct-01

BTS 410 E2

Figure 9a: Overvoltage at short circuit shutdown:

IN

V

bb

OUT

I

ST

L

V

bb(o rst)

Output short to GND

short circuit shutdown

Overvoltage due to power line induct ance. No overvoltage autorestart of PROFET after short circuit shutdown.

t

Semiconductor Group 14 2003-Oct-01

BTS 410 E2

Package and Ordering Code

All dimensions in mm

Standard TO-220AB/5 Ordering code

BTS 410 E2

Q67060-S6102-A2

TO-220AB/5, Option E3043 Ordering code

BTS 410 E2 E3043

Q67060-S6102-A3

SMD TO-220AB/5, Opt. E3062 Ordering code

BTS410E2 E3062A

T&R: Q67060-S6102-A4

Changed since 04.96 Date Change

Mar. 1997

EAS maximum rating and diagram and Z

diagram added

thJC

ESD capability (except Input)

specified to 2kV, R

thJA SMD

specified

I

L(GND high) max

reduced from 10 to

1 mA

Option Overview table columns for

BTS307/308 added

Fig. 1a: V

-spike at Vbb-turn-on

out

added

Semiconductor Group 15 2003-Oct-01

BTS 410 E2

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not

limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Semiconductor Group 16 2003-Oct-01