Datasheet BTS409L1E3062A Specification

BTS409L1

Smart Highside Power Switch

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

1

)

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

protection

bb

Application

•

µC compatible power switch with diagnostic

Product Summary Overvoltage protection V Operating voltage

V

43 V

bb(AZ)

5.0 ... 34 V

bb(on)

On-state resistance RON 200 Load current (ISO) I Current limitation I

2.3 A

L(ISO)

4A

L(SCr)

TO-220AB/5

Standard

5

Straight leads

5

1

SMD

feedback for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS



technology. Providing embedded protective functions.

mΩ

5

Voltag

source

V

Logic

Voltag

sensor

IN

2

ESD

4

ST

Logic

Overvoltag

protectio

Charge

Level

Rectifier

GND

Curren

1

Signal GND

1)

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

limit

protectio

Limit for

unclampe

ind.

Open

Short to

detectio

Gate

PROFET

Temperatur

sensor



R

GND

+ V

O

bb

OUT

Load GND

3

5

Load

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BTS409L1

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Vbb 43 V Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

Load dump protection2) V

3)

R

= 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high

I

LoadDump

= UA + Vs, UA = 13.5 V

Vbb 34 V

4

V

Load dump

)

60 V

Load current (Short circuit current, see page 4) IL self-limited A Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C P Inductive load switch-off energy dissipation, single pulse

V

= 12V, T

bb

= 150°C, TC = 150°C const.

j,start

IL = 2.3 A, ZL = 98 mH, 0 Ω: Electrostatic discharge capability (ESD) IN:

(Human Body Model) all other pins:

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

Tj T

stg

18 W

tot

-40 ...+150

-55 ...+150

°C

EAS 335 mJ V

1.0

ESD

kV

2.0

Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6

I

IN

I

ST

±2.0 ±5.0

mA

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

75

K/W

7

Thermal resistance chip - case:

junction - ambient (free air):

SMD version, device on PCB5):

2)

Supply voltages higher than V

150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

RI = internal resistance of the load dump test pulse generator

4)

V

Load dump

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

R

thJC

R

thJA

2

(one layer, 70µm thick) copper area for Vbb

--

- 39

--

Infineon Technologies AG 2 2003-Oct-01

BTS409L1

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5) IL = 1.8 A Tj=25 °C:

RON

min typ max

-- 160

200

mΩ Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5)

VON = 0.5 V, TC = 85 °C

Output current (pin 5) while GND disconnected or

I

L(ISO)

I

L(GNDhigh)

1.8 2.3

-- -- 10 mA

320

GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7

Turn-on time IN to 90% V Turn-off time IN to 10% V

OUT OUT

:

ton

:

t

off

80 80

200

200 RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% V

OUT

, R

= 12 Ω, Tj =-40...+150°C

L

Slew rate off 70 to 40% V

, RL = 12 Ω, Tj =-40...+150°C

OUT

Operating Parameters

Operating voltage6) Tj =-40...+150°C: V Undervoltage shutdown Tj =-40...+150°C: V Undervoltage restart Tj =-40...+25°C:

dV /dton 0.1 -- 1 V/µs

-dV/dt

bb(on) bb(under)

V

bb(u rst)

0.1 -- 1 V/µs

off

5.0 -- 34 V

3.5 -- 5.0 V

-- -- 5.0

Tj =+150°C: Undervoltage restart of charge pump

V

bb(ucp)

-- 5.6 7.0 V

see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis

∆V

bb(under)

= V

bb(u rst)

- V

bb(under)

Overvoltage shutdown Tj =-40...+150°C: V Overvoltage restart Tj =-40...+150°C: V Overvoltage hysteresis Tj =-40...+150°C: ∆V Overvoltage protection

7)

Tj =-40...+150°C:

∆V

bb(over) bb(o rst)

V

bb(AZ)

bb(under)

-- 0.2 -- V

34 -- 43 V 33 -- -- V

-- 0.5 -- V

bb(over)

42 47 -- V Ibb=40 mA Standby current (pin 3)

I

VIN=0 T T

Leakage output current (included in I

VIN=0

=-40...+25°C:

j

= 150°C:

j

)

bb(off)

Operating current (Pin 1)8), VIN=5 V,

=-40...+150°C

Tj

bb(off)

I

-- -- 12 µA

L(off)

I

-- 1.8 3.5 mA

GND

--

10 12

400

-- A

400 400

7.0

23 28

µs

V

µA

6)

At supply voltage increase up to Vbb= 5.6 V typ without charge pump, V

7)

See also V

in table of protection functions and circuit diagram page 7.

ON(CL)

≈Vbb - 2 V

OUT

Infineon Technologies AG 3 2003-Oct-01

BTS409L1

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

min typ max

Protection Functions9)

Initial peak short circuit current limit (pin 3 to 5) I

T

=-40°C:

j

Tj =25°C: Tj =+150°C:

Repetitive short circuit shutdown current limit I

5.5

L(SCp)

9.5

4.5 3

L(SCr)

7.5 5

13 11

A

7

Tj = Tjt (see timing diagrams, page 10) -- 4 -- A

Output clamp (inductive load switch off) at V

= Vbb - V

OUT

I

ON(CL)

= 40 mA: V

L

ON(CL)

41

47 53 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis Reverse battery (pin 3 to 1)

10)

-Vbb -- -- 32 V

∆

Tjt -- 10 -- K

Diagnostic Characteristics

Open load detection current Tj=-40 °C:

(on-condition) Tj=25 ..150°C:

Open load detection voltage

T

11)

(off-condition)

=-40..150°C:

j

Internal output pull down

(pin 5 to 1), V

=5 V, Tj=-40..150°C

OUT

I

10

L (OL)

V

OUT(OL)

RO

--

10

--

200 150

mA

2 3 4V

4

10 30 kΩ

8)

Add I

9)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

10)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

11)

External pull up resistor required for open load detection in off state.

, if IST > 0, add IIN, if VIN>5.5 V

ST

Infineon Technologies AG 4 2003-Oct-01

BTS409L1

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Input and Status Feedback

12)

Input resistance

see circuit page 6 Input turn-on threshold voltage Tj =-40..+150°C: V Input turn-off threshold voltage Tj =-40..+150°C: V

RI 2.5 3.5 6 kΩ

IN(T+) IN(T-)

Input threshold hysteresis ∆ V Off state input current (pin 2), VIN = 0.4 V,

I

IN(off)

min typ max

1.7 -- 3.5 V

1.5 -- -- V

-- 0.5 -- V

IN(T)

1 -- 50 µA

Tj =-40..+150°C On state input current (pin 2), VIN = 3.5 V,

I

20 50 90 µA

IN(on)

Tj =-40..+150°C Delay time for status with open load after switch

t

d(ST OL4)

100 400 800 µs

off (see timing diagrams, page 11), Tj =-40..+150°C

Status invalid after positive input slope (open load) Tj=-40 ... +150°C:

t

d(ST)

-- 250 600 µs

Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+25°C, IST = +1.6 mA:

T

= +150°C, IST = +1.6 mA:

j

V

ST(high)

V

ST(low)

5.4

--

6.1

--

0.4

0.6

--

V

12)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Infineon Technologies AG 5 2003-Oct-01

BTS409L1

Truth Table

Normal operation Open load L

Short circuit to V

bb

Overtemperature Undervoltage

Input- Output Status

level

L

H

H L

H L H

13

L

H

H H

H

L L L L

)

Overvoltage L H L

L

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)

H (L

L

H (L

H H

L

15)

H L H H H H

14)

16)

)

Terms

V

bb

I

bb

R

GND

3

V

bb

PROFET

GND

1

I

GND

OUT

I

5

V

L

V

ON

OUT

I

IN

2

I

ST

V

IN

4

V

ST

Input circuit (ESD protection)

R

IN

I

ESD-ZD

I

GND

I

ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

13)

Power Transistor off, high impedance

14)

with external resistor between pin 3 and pin 5

15)

An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R is used, an offset voltage at the GND and ST pins will occur and the V

16)

Low resistance to V

may be detected in ON-state by the no-load-detection

bb

signal may be errorious.

ST low

GND

Infineon Technologies AG 6 2003-Oct-01

BTS409L1

Status output

Open-load detection

+5V

ON-state diagnostic condition: VON < R high

ON

* I

L(OL)

; IN

R

ST(ON)

ST

+ V

bb

ESD-

GND

ZD

ESD-Zener diode: 6.1 V typ., max 5 mA; R

ST(ON)

< 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Inductive and overvoltage output clamp

V

Z

GND

PROFET

+ V

V

OUT

bb

ON

V

clamped to 47 V typ.

ON

Overvolt. and reverse batt. protection

+ V

bb

V

GND

Z2

PROFET

GND

Signal GND

= 150 Ω,

GND

R

IN

R

ST

= 6.2 V typ., VZ2 = 47 V typ., R

V

Z1

R

= 15 kΩ, RI= 3.5 kΩ typ.

ST

R

I

IN

Logic

ST

V

Z1

R

ON

Logic

unit

Open load

detection

OFF-state diagnostic condition: V

OFF

Logic

unit

Open load

detection

Signal GND

GND disconnect

3

V

IN

2

ST

4

V

IN

V

ST

bb

Any kind of load. In case of Input=high is V Due to V

>0, no VST = low signal available.

GND

bb

PROFET

GND

1

V

GND

V

ON

OUT

> 3 V typ.; IN low

OUT

R

EXT

V

OUT

R

O

OUT

5

≈ VIN - V

OUT

IN(T+)

.

Infineon Technologies AG 7 2003-Oct-01

BTS409L1

GND disconnect with GND pull up

2

4

V

bb

Any kind of load. If V Due to V

V

IN

>0, no VST = low signal available.

GND

ST

GND

IN

ST

> V

PROFET

GND

- V

IN

3

V

bb

1

V

GND

device stays off

IN(T+)

OUT

Inductive Load switch-off energy dissipation

E

bb

E

AS

E

Load

L

R

5

=

IN

ST

V

bb

PROFET

GND

OUT

L

{Z

R

L

Vbb disconnect with energized inductive load

3

high

V

bb

IN

2

ST

4

V

bb

PROFET

GND

1

OUT

5

Normal load current can be handled by the PROFET itself.

Vbb disconnect with charged external inductive load

S

3

high

IN

2

ST

4

V

bb

PROFET

GND

1

OUT

5

D

Energy stored in load inductance:

2

1

/

=

·L·I

E

L

2

L

While demagnetizing load inductance, the energy dissipated in PROFET is

= Ebb + EL - ER= V

E

AS

with an approximate solution for R

· L

I

AS

=

L

·(V

+ |V

bb

·R

2

L

OUT(CL)

|)· ln (1+

E

ON(CL)·iL

L

> 0 Ω:

|V

(t) dt,

I

L·RL

OUT(CL)

Maximum allowable load inductance for a single switch off

L = f (I

V L [mH]

12 V, R

=

bb

10000

1000

100

L

); T

j,start

L

150°C,T

=

0 Ω

=

150°C const.,

=

C

|

)

V

bb

If other external inducti ve loads L are connected to the PROFET, additional elements lik e D are necessary.

10

1

12345

IL [A]

Infineon Technologies AG 8 2003-Oct-01

BTS409L1

Transient thermal impedance chip case

Z

thJC

= f(tp)Z

[K/W]

thJC

10

1

D=

0.5

0.1

0.2

0.1

0.05

0.02

0.01 0

0.01

1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2

tp [s]

Infineon Technologies AG 9 2003-Oct-01

BTS409L1

Timing diagrams

Figure 1a: Vbb turn on:

IN

V

bb

V

OUT

ST open drain

proper turn on under all conditions

Figure 2a: Switching a lamp,

IN

Figure 2b: Switching an inductive load

IN

t

ST

V

OUT

I

L

t

I

L(OL)

d(ST)

*)

*) if the time constant of load is too large, open-load-status may occur

Figure 3a: Short circuit shut down by overtempertature, reset by cooling

IN

t

ST

I

L

V

OUT

I

L(SCp)

I

L(SCr)

I

L

t

ST

t

Heating up may require several milliseconds, depending on external conditions

Infineon Technologies AG 10 2003-Oct-01

BTS409L1

Figure 4a: Overtemperature:

Reset if T

<Tjt

j

IN

ST

V

OUT

T

J

Figure 5b: Open load: detection in ON-state, open load occurs in on-state

IN

t

d(ST OL1)

ST

V

OUT

normal

I

L

open

t

d(ST OL2)

normal

t

Figure 5a: Open load: detection in ON-state, turn on/off to open load

IN

ST

t

d(ST)

t

d(ST OL4)

V

OUT

I

L

open

t

d(ST OL1)

= 30 µs typ., t

d(ST OL2)

= 20 µs typ

Figure 5c: Open load: detection in ON- and OFF-state (with R

), turn on/off to open load

EXT

IN

ST

V

OUT

t

d(ST)

I

L

open

t

The status delay time t the failure modes "open load" and "overtemperature".

d(ST OL4)

allows to ditinguish between

Infineon Technologies AG 11 2003-Oct-01

BTS409L1

Figure 6a: Undervoltage:

IN

V

bb

V

OUT

V

bb(under)

ST open drain

Figure 6b: Undervoltage restart of charge pump

bb(u cp)

bb(u rst)

t

Figure 7a: Overvoltage:

IN

V

bb

V

OUT

ST

V

ON(CL)

V

bb(over)

V

bb(o rst)

t

V

on

off-state

V

bb(u rst)

V

bb(under)

charge pump starts at V

bb(u cp)

bb(ucp)

on-state

V

bb(over)

V

bb(o rst)

=5.6 V typ.

V

ON(CL)

off-state

V

bb

Infineon Technologies AG 12 2003-Oct-01

BTS409L1

Package and Ordering Code

All dimensions in mm

Standard TO-220AB/5 Ordering code

BTS409L1 Q67060-S6107-A2

TO-220AB/5, Option E3043 Ordering code

BTS409L1 E3043

Q67060-S6107-A3

SMD TO-220AB/5, Opt. E3062 Ordering code

BTS409L1 E3062A T&R: Q67060-S6107-A4

Changed since 04.96 Date Change

Dec Zth Specification added 1996 t

d(ST OL4)

max reduced from 1500

to 800µs

ESD capability increased E

maximum rating and diagram

AS

added

2000

Company Name

Infineon Technologies AG 13 2003-Oct-01

BTS409L1

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not

limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

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Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Infineon Technologies AG 14 2003-Oct-01