
Product Summary
Drain source voltage
V
DS
42 V
On-state resistance R
DS(on
50 m
Nominal load current I
D(Nom
S
3 J
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
μC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Overtemperature
Protection
Short circuit
Protection
OvervoltageProtection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
P / PG-TO252-3-11
Smart Low Side Power Switch
Power HITFET BTS 3134D
Datasheet 1 Rev. 1.4, 2013-03-07

= 25 °C, unless otherwise specified
1
)
Parameter
Symbol Value Unit
Drain source voltage V
DS
42 V
Drain source voltage for short circuit protection
T
j
= -40 ... +150 °C
V
DS(SC)
30
Continuous input current
-0.2V V
IN
10V
V
IN
< -0.2V or VIN > 10V
I
IN
no limit
| I
IN
| 2
mA
Operating temperature T
j
-40 ... +150
°C
Storage temperature T
stg
-55 ... +150
Power dissipation 4)
T
C
= 85 °C
6cm
2
cooling area , TA = 85 °C
P
tot
43
1.1
W
Unclamped single pulse inductive energy
1)
E
S
3
J
Load dump protection V
LoadDump
2)
= VA + VS
V
IN
= 0 and 10 V, td = 400 ms, RI = 2 ,
R
L
= 4.5 , VA = 13.5 V
V
LD
65 V
Electrostatic discharge voltage
(Human Body Model)
according to ANSI/ESDA/JEDEC JS-001
(1.5 kΩ, 100 pF)
V
ESD
2 kV
Thermal resistance
junction - case:
R
thJC
1.5 K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
115
55
1
Not
subject to production test, specified by design.
2
V
Loaddump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
4
Not subject to production test, calculated by R
thJA/RthJC
and maximum allowed junction temperature
Smart Low Side Power Switch
Power HITFET BTS 3134D
Datasheet 2 Rev. 1.4, 2013-03-07

Electrical Characteristics
Parameter
Symbol Values Unit
at Tj = 25 °C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ... +150 °C, ID = 10 mA
V
DS(AZ)
42 - 55 V
Off-state drain current Tj = -40 ... +150 °C
V
DS
= 32 V, VIN = 0 V
I
DSS
- 1.5 10 μA
Input threshold voltage
I
D
= 1.4 mA, T
j
= 25 °C
I
D
= 1.4 mA, T
j
= 150 °C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current I
IN(on
- 10 30 μA
On-state resistance
V
IN
= 5 V, ID = 3 A, Tj = 25 °C
V
IN
= 5 V, ID = 3 A, Tj = 150 °C
R
DS(on)
-
-
45
75
60
100
m
On-state resistance
V
IN
= 10 V, ID = 3 A, Tj = 25 °C
V
IN
= 10 V, ID = 3 A, Tj = 150 °C
R
DS(on)
-
-
35
65
50
90
Nominal load current
1)
T
j
< 150 °C, VIN = 10 V, TA = 85 °C, SMD
2
)
I
D(Nom)
3.5 - -
A
Nominal load current 1)
V
IN
= 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150 °C
I
D(ISO)
7.1 - -
Current limit (active if V
DS
> 2.5 V)
3)
V
IN
= 10 V, VDS = 12 V, tm = 200 μs
I
D(lim)
18 24 30
1
Not subject to production test, calculated by R
thJA
/R
thJC
and R
DS(on)
2
@ 6 cm
2
cooling area
3
Device switched on into existing short circuit (see diagram Determination of I
D(lim)
). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 μs.
Smart Low Side Power Switch
Power HITFET BTS 3134D
Datasheet 3 Rev. 1.4, 2013-03-07

Electrical Characteristics
Parameter
Symbol Values Unit
at Tj = 25 °C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time V
IN
to 90% ID:
R
L
= 4.7 , VIN = 0 to 10 V, Vbb = 12 V
t
on
- 60 100
μs
Turn-off time VIN to 10% ID:
R
L
= 4.7 , VIN = 10 to 0 V, Vbb = 12 V
t
off
- 60 100
Slew rate on 70 to 50% Vbb:
R
L
= 4.7 , VIN = 0 to 10 V, Vbb = 12 V
-dVDS/dt
on
- 0.3 1.5
V/μs
Slew rate off 50 to 70% Vbb:
R
L
= 4.7 , VIN = 10 to 0 V, Vbb = 12 V
dVDS/dt
off
- 0.7 1.5
Protection Functions
1)
Thermal overload trip temperature T
t
150 175 - °C
Input current protection mode I
IN(Prot
80 160 300 μA
Input current protection mode
T
j
= 150 °C
I
IN(Prot)
- 130 300
Unclamped single pulse inductive energy
2)
I
D
= 3 A, Tj = 25 °C, Vbb = 12 V
E
AS
3 - - J
Inverse Diode
Inverse diode forward voltage
I
F
= 15 A, tm = 250 μs, VIN = 0 V,
t
P
= 300 μs
V
SD
- 1.0 -
V
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2
Not tested, specified by design.
Smart Low Side Power Switch
Power HITFET BTS 3134D
Datasheet 4 Rev. 1.4, 2013-03-07

Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN
D
V
IN
I
D
V
DS
1
I
IN
S
V
bb
R
L
2
3
HITFET
V
Z
D
S
Short circuit behaviour
Input circuit (ESD protection)
IN
t
V
t
I
IN
t
I
D
t
T
j
Gate Drive
Source/
Ground
Input
Smart Low Side Power Switch
Power HITFET BTS 3134D
Datasheet 5 Rev. 1.4, 2013-03-07

1 Maximum allowable power dissipation
P
tot
= f(TC) resp.
P
tot
= f(TA) @ R
thJA
=55 K/W
-50 -25 0 25 50 75 100
°C
150
TA;T
C
0
0.5
1
1.5
2
W
3
P
tot
SMD @ 6cm2
Rthjc = 1.5 K/W
2 On-state resistance
R
ON
=f(Tj); ID=3A; VIN=10V
-50 -25 0 25 50 75 100 125
°C
175
T
j
0
10
20
30
40
50
60
70
80
m
100
R
DS(on)
typ.
max.
3 On-state resistance
R
ON
=f(Tj); ID=3A; VIN=5V
-50 -25 0 25 50 75 100 125
°C
175
T
j
0
10
20
30
40
50
60
70
80
90
m
110
R
DS(on)
typ.
max.
4 Typ. input threshold voltage
V
IN(th)
= f(Tj); ID = 0.7 mA; V
DS
= 12V
-50 -25 0 25 50 75 100
°C
150
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
V
GS(th)
Smart Low Side Power Switch
Power HITFET BTS 3134D
Datasheet 6 Rev. 1.4, 2013-03-07

5 Typ. transfer characteristics
I
D
=f(VIN); VDS=12V; T
Jstart
=25 °C
0 1 2 3 4 5 6 7 8
V
10
V
IN
0
5
10
15
20
A
30
I
D
6 Typ. short circuit current
I
D(lim)
= f(Tj); VDS=12V
Parameter: V
IN
-50 -25 0 25 50 75 100 125
°C
175
T
j
0
5
10
15
20
A
30
I
D(SC)
5V
Vin=10V
7 Typ. output characteristics
I
D
=f(VDS); T
Jstart
=25 °C
Parameter: V
IN
0 1 2 3 4
V
6
V
DS
0
5
10
15
20
25
A
35
I
D
Vin=3V
4V
5V
6V
10V
7V
8 Typ. off-state drain current
I
DSS
= f(Tj)
-50 -25 0 25 50 75 100 125
°C
175
T
j
0
1
2
3
4
5
6
7
8
9
μA
11
I
DSS
typ.
max.
Smart Low Side Power Switch
Power HITFET BTS 3134D
Datasheet 7 Rev. 1.4, 2013-03-07

9 Typ. overload current
I
D(lim)
= f(t), Vbb=12 V, no heatsink
Parameter: T
jstart
0 1 2 3
ms
5
t
0
5
10
15
20
25
30
A
40
I
D(lim)
-40°C
25°C
85°C
150°C
10 Typ. transient thermal impedance
Z
thJA
=f(tp) @ 6 cm2 cooling area
Parameter: D=t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10 0 10
1
10
3
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
11 Determination of I
D(lim)
I
D(lim)
= f(t); tm = 200μs
Parameter: T
Jstart
0 0.1 0.2 0.3 0.4
ms
0.6
t
0
5
10
15
20
25
30
A
40
I
D(lim)
-40°C
25°C
85°C
150°C
Smart Low Side Power Switch
Power HITFET BTS 3134D
Datasheet 8 Rev. 1.4, 2013-03-07

Smart Low Side Power Switch
5.4
±0.1
-0.05
6.5
+0.15
A
±0.5
9.98
6.22
-0.2
1
±0.1
±0.15
0.8
0.15 MAX.
±0.1
per side
0.75
2.28
4.57
+0.08
GPT09277
-0.04
0.5
2.3
-0.10
+0.05
B
0.51 MIN.
+0.08
-0.04
0.5
0...0.15
B
A0.25
M
0.1
All metal surfaces tin plated,
except area of cut.
3x
(5)
(4.24)
-0.01
+0.20
0.9
B
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
Power HITFET BTS 3134D
1 Package Outlines
Package Outlines
Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
go
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
vernment regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
Datasheet 9 Rev. 1.4, 2013-03-07

Smart Low Side Power Switch
Power HITFET BTS 3134D
2 Revision History
Version Date Changes
Rev. 1.4
Rev. 1.3
Rev. 1.2
Rev. 1.1 2006-08-08 released non automotive green version (ITS)
Rev. 1.0 2004-03-05 released production version
2012-03-07 page 2:
- added footnote “Not subject to production test, specified by design” for
ch
apter/table Maximum Ratings
- added footnote “Not subject to prod. test, calculated ...” for parameter
- updated ESD HBM standard in chapter “Maximum Ratings”
page 3:
- updated test condition
- added footnote “Not subject to production test, calculated...” to the parameter
Nominal load current
2006-12-22 released automotive green and robust version (BTS)
Package parameter (humidity and climatic) removed in Maximum ratings
2006-12-11 AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
I
for parameter input threshold voltage V
D
I
, I
D(nom)
D(ISO)
Revision History
P
tot
IN(th)
Datasheet 10 Rev. 1.4, 2013-03-07