Datasheet BFG93A-X, BFG93A Datasheet (Philips)

DATA SH EET

ook, halfpage

M3D071

BFG93A; BFG93A/X

NPN 6 GHz wideband transistors

Product specification
Supersedes data of 1995 Sep 25

1998 Sep 23

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

excellent reliability.

APPLICATIONS

PINNING

PIN DESCRIPTION

BFG93A

1 collector
2 base
3 emitter
4 emitter

handbook, 2 columns

12

Top view

34

MSB014

Wideband applications in the UHF
and microwave range.

BFG93A/X

Fig.1 SOT143B.

1 collector

DESCRIPTION

NPN transistor in a 4-pin, dual-emitter
SOT143B plastic package.

2 emitter
3 base
4 emitter

MARKING

TYPE NUMBER CODE

BFG93A R8
BFG93A/X V15

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
C
f
G

CBO
CEO

C

tot

re

T

UM

collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−12 V
collector current (DC) −−35 mA
total power dissipation Ts≤ 85 °C −−300 mW
feedback capacitance IC=ic= 0; VCB= 5 V; f = 1 MHz − 0.6 − pF
transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz 4.5 6 − GHz
maximum unilateral

power gain

IC= 30 mA; VCE=8V; T
f = 1 GHz

I

= 30 mA; VCE=8V; T

C

amb

amb

=25°C;

=25°C;

− 16 − dB

− 10 − dB

f = 2 GHz

F noise figure Γ

= Γ

; IC= 5 mA; VCE=8V;

opt

=25°C; f = 1 GHz

T

s
amb

− 1.7 − dB

1998 Sep 23 2

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
emitter-base voltage open collector − 2V
collector current (DC) − 35 mA
total power dissipation Ts≤ 85 °C; note 1 − 300 mW
storage temperature range −65 +150 °C
junction operating temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point note 1 290 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h
C
C
C
f

T

G

FE

c
e
re

UM

collector leakage current IE= 0; VCB=5V −−50 nA
DC current gain IC= 30 mA; VCE= 5 V 40 90 −
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 0.9 − pF
emitter capacitance IC=ic= 0; VEB=5V; f=1MHz − 1.9 − pF
feedback capacitance IC=ic= 0; VCB=5V; f=1MHz − 0.6 − pF
transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz 4.5 6 − GHz
maximum unilateral power

gain; note 1

IC= 30 mA; VCE=8V; T
f = 1 GHz

I

= 30 mA; VCE=8V; T

C

amb

amb

=25°C;

=25°C;

− 16 − dB

− 10 − dB

f = 2 GHz

= Γ

F noise figure Γ

; IC= 5 mA; VCE=8V;

s

opt

T

=25°C; f = 1 GHz

amb

Γ

= Γ

; IC= 5 mA; VCE=8V;

s

opt

T

=25°C; f = 2 GHz

amb

− 1.7 − dB

− 2.3 − dB

Note

1. G

is the maximum unilateral power gain, assuming S12 is zero and

UM

1998 Sep 23 3

2

S

G

UM

10

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

dB.log=

2

22

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

150

Fig.2 Power derating curve.

Ts(

MBG245

o

C)

120

handbook, halfpage

h

FE

80

40

0

0102030

VCE=5V.

I (mA)

C

Fig.3 DC current gain as a function of collector

current; typical values.

MCD087

12

MCD088

V (V)

CB

1.0

handbook, halfpage

C

re

(pF)

0.8

0.6

0.4

0.2

0

048 16

IC=ic= 0; f= 1 MHz.

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

1998 Sep 23 4

handbook, halfpage

8

f

T

(GHz)

6

4

2

0

01020 40

VCE= 5 V; T

=25°C; f= 500MHz.

amb

Fig.5 Transition frequency as a function of

collector current; typical values.

30

MCD089

I (mA)

C

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

30

handbook, halfpage

gain
(dB)

20

10

0

0

VCE= 8 V; f = 500 MHz.

10 20 40

30

MSG

G

I (mA)

C

Fig.6 Gain as a function of collector current;

typical values.

MCD090

UM

30

handbook, halfpage

gain
(dB)

30

MSG

G

I (mA)

C

20

10

0

0

VCE= 8 V; f = 1 GHz.

10 20 40

Fig.7 Gain as a function of collector current;

typical values.

MCD091

UM

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

10

VCE= 8 V; IC= 10 mA.

MSG

G

UM

2

10

10

MCD092

G

max

3

f
(MHz)

4

10

Fig.8 Gain as a function of frequency; typical

values.

1998 Sep 23 5

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

10

VCE= 8 V; IC=30mA.

MSG

G

UM

G

max

2

10

3

10

f (MHz)

Fig.9 Gain as a function of frequency; typical

values.

MCD093

4

10

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

handbook, halfpage

4

F

(dB)

3

2

1

0

VCE=8V.

f = 2 GHz

1 GHz

500 MHz

101

I (mA)

C

Fig.10 Minimum noise figure as a function of

collector current; typical values.

MCD094

f (MHz)

MCD095

4

10

handbook, halfpage

2

10

4

F

(dB)

3

2

1

0

10

VCE=8V.

I = 30 mA

C

10 mA

5 mA

2

3

10

Fig.11 Minimum noise figure as a function of

frequency; typical values.

handbook, full pagewidth

Zo=50Ω.
Maximum stable gain = 22.2 dB.

stability

unstable

region

0.2

+ j

– j

0.2

MSG

22.2 dB

circle

0.5

0.2

0.5

1

OPT

*

F = 1.4 dB

min

1

2 dB

3 dB

4 dB

1

2

25100.5

2

MCD096

Fig.12 Common emitter noise figure circles; typical values.

5

10

∞

10

5

1998 Sep 23 6

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

handbook, full pagewidth

Zo=50Ω.
Maximum stable gain = 10.4 dB.

1

stability
circle

+ j

unstable

region

– j

0

0.2

0.2

MSG

10.4 dB

0.5

0.5

0.2

F = 2 dB

min

0.5

2.5 dB

4 dB

6 dB

OPT

*

1

1

2510

2

2

Fig.13 Common emitter noise figure circles; typical values.

5

10

∞

10

5

MCD097

handbook, full pagewidth

Zo=50Ω.

1

0.5

5 dB

0.2

+ j

– j

0.2

0.2

G = 9 dB

0.5

4 dB

3.5 dB

OPT

*

0.5

F = 3 dB

min

*

max

8 dB

7 dB

1

1

2510

2

2

MCD098

Fig.14 Common emitter noise figure circles; typical values.

5

10

∞

10

5

1998 Sep 23 7

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

handbook, full pagewidth

VCE= 8 V; IC= 30 mA; Zo=50Ω.

1

0.5

3 GHz

0.2

+ j

0

– j

0.2

0.5

0.5 10.2 1052

40 MHz

1

2

2

Fig.15 Common emitter input reflection coefficient (S11).

5

10

∞

10

5

MCD099

handbook, full pagewidth

VCE= 8 V; IC= 30 mA; R

o

90

o

135

40 MHz

1020304050

3 GHz

_90o

max

180

=50Ω.

o

_

o

135

Fig.16 Common emitter forward transmission coefficient (S21).

_

45

45

MCD100

o

o

0

o

1998 Sep 23 8

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

o

90

handbook, full pagewidth

VCE= 8 V; IC= 30 mA; R

handbook, full pagewidth

o

max

180

= 0.2 Ω.

135

o

_

o

135

40 MHz

_90o

3 GHz

Fig.17 Common emitter reverse transmission coefficient (S12).

1

0.5

2

_

45

45

MCD102

o

o

0

0.200.160.120.080.04

o

0.2

+ j

0

– j

0.2

0.5

VCE= 10 V; IC= 15 mA; Zo=50Ω.

0.5 10.2 1052

3 GHz

Fig.18 Common emitter output reflection coefficient (S22).

1998 Sep 23 9

5

10

∞

40 MHz

2

1

10

5

MCD101

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

SPICE parameters for BFR91A(/X) die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.328 fA
2 BF 102.0 −
3 NF 1.000 −
4 VAF 51.90 V
5 IKF 8.155 A
6 ISE 13.90 fA
7 NE 15.12 −
8 BR 17.69 −
9 NR 994.0 m
10 VAR 3.280 V
11 IKR 10.00 A
12 ISC 1.043 aA
13 NC 1.189 −
14 RB 10.00 Ω
15 IRB 1.000 µA
16 RBM 10.00 Ω
17 RE 763.6 mΩ
18 RC 9.000 Ω
19 (note 1) XTB 0.000 −
20 (note 1) EG 1.110 EV
21 (note 1) XTI 3.000 −
22 CJE 2.032 pF
23 VJE 600.0 mV
24 MJE 290.0 m
25 TF 6.557 ps
26 XTF 38.97 −
27 VTF 10.93 V
28 ITF 521.0 mA
29 PTF 0.000 deg
30 CJC 1.003 pF
31 VJC 340.8 mV
32 MJC 194.2 m
33 XCJC 120.0 m
34 TR 3.073 ns
35 (note 1) CJS 0.000 F

SEQUENCE No. PARAMETER VALUE UNIT

36 (note 1) VJS 750.0 mV
37 (note 1) MJS 0.000 −
38 FC 800.0 m

Note

1. These parameters have not been extracted,
the default values are shown.

handbook, halfpage

L1 L2

B

C

QLB= 50; QLE= 50.
QL

(f) = QL

B,E

fc= scaling frequency = 1000 MHz.

L

be ce

√ (f/fc).

B,E

C

cb

B

E'

L

E

L3

E

C

MBC964

Fig.19 Package equivalent circuit SOT143B.

List of components (see Fig.19)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

84 fF
17 fF

191 fF
L1 0.12 nH
L2 0.21 nH
L3 0.06 nH
L

B

L

E

0.95 nH

0.40 nH

CB' C'

1998 Sep 23 10

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

PACKAGE OUTLINES

Plastic surface mounted package; 4 leads SOT143B

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

34

Q

A

A

1

21

L

b

1

e

1

detail X

p

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

1.1

0.9

OUTLINE

VERSION

SOT143B

1

A

max

0.1

b

c

D

3.0

1.4

2.8

1.2

REFERENCES

E

b

0.48

0.38

1

p

0.88

0.15

0.78

0.09

IEC JEDEC EIAJ

e

1.9

1998 Sep 23 11

e

1.7

H

L

E

1

2.5

2.1

0.45

0.15

p

0.55

0.45

EUROPEAN

PROJECTION

ywvQ

0.1 0.10.2

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Sep 23 12

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

NOTES

1998 Sep 23 13

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

NOTES

1998 Sep 23 14

Philips Semiconductors Product specification

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

NOTES

1998 Sep 23 15

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© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 125104/00/04/pp16 Date of release: 1998 Sep23 Document order number: 9397 75004351