Datasheet BFG590-X, BFG590 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D071

BFG590; BFG590/X

NPN 5 GHz wideband transistors

Product specification
Supersedes data of 1995 Sep 19

1998 Oct 02

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

• MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range

• Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.

MARKING

TYPE NUMBER CODE

BFG590 N38
BFG590/X N44

PINNING

DESCRIPTION

PIN

BFG590 BFG590/X

1 collector collector
2 base emitter
3 emitter base
4 emitter emitter

handbook, 2 columns

12

Top view

Fig.1 Simplified outline SOT143B.

34

MSB014

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

C

re

f

T

G

UM

2

|

|S

21

collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−200 mA
total power dissipation Ts≤ 60 °C −−400 mW
DC current gain IC= 35 mA; VCE=8V 5090280
feedback capacitance IC= 0; VCE=8V; f=1MHz − 0.7 − pF
transition frequency IC= 80 mA; VCE=4V; f=1GHz − 5 − GHz
maximum unilateral power gain IC= 80 mA; VCE=4V;

f = 900 MHz; T

amb

=25°C

insertion power gain IC= 80 mA; VCE=4V;

f = 900 MHz; T

amb

=25°C

− 13 − dB

− 11 − dB

1998 Oct 02 2

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 200 mA
total power dissipation Ts≤ 60 °C; see Fig.2; note 1 − 400 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point Ts≤ 60 °C; note 1 290 K/W

Note

is the temperature at the soldering point of the collector pin.

1. T

s

600

handbook, halfpage

P

tot

(mW)

400

200

MBG249

0

0 50 100 200

150

Ts(

o

C)

Fig.2 Power derating curve.

1998 Oct 02 3

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

f

T

C

re

G

UM

2

|S

|

21

collector-base breakdown voltage IC= 0.1 mA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 15 −−V
emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V
collector-base leakage current VCB=10V; IE=0 −−100 nA
DC current gain IC= 70 mA; VCE= 8 V; see Fig.3 60 120 250
transition frequency IC= 80 mA; VCE=4V;

− 5 − GHz

f = 1 GHz; see Fig.5

feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz;

− 0.7 − pF

see Fig.4

maximum unilateral power gain;
note 1

insertion power gain IC= 80 mA; VCE=4V;

IC= 80 mA; VCE=4V;
f = 900 MHz; T

I

= 80 mA; VCE= 4 V; f = 2 GHz;

C

T

=25°C

amb

f = 900 MHz; T

amb

amb

=25°C

=25°C

− 13 − dB

− 7.5 − dB

− 11 − dB

Note

1. G

is the maximum unilateral power gain, assuming S12 is zero and

UM

2

S

G

UM

10

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

dB.log=

2

22

1998 Oct 02 4

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

250

handbook, halfpage

h

FE

200

150

100

50

0
10

VCE=8V.

−2

−1

10

11010

IC (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

MRA749

2

1.2

handbook, halfpage

C

re

(pF)

0.8

0.4

0

0

IC= 0; f= 1 MHz.

210

468

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MLC057

V (V)

CB

f

T

(GHz)

V

CE =

8

6

4

2

0

10

4 V; f = 1 GHz.

I (mA)

C

handbook, halfpage

Fig.5 Transition frequency as a function of

collector current; typical values.

MLC058

2

10

1998 Oct 02 5

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

30

handbook, halfpage

gain
(dB)

20

10

0

0

f = 900 MHz; VCE=4V.

20 40 60 80

Fig.6 Gain as a function of collector current;

typical values.

MLC059

G

max

G

UM

I (mA)

C

100

12

handbook, halfpage

gain
(dB)

8

4

0

0

f = 2 GHz; VCE=4V.

20 40 60 80

Fig.7 Gain as a function of collector current;

typical values.

MLC060

G

max

G

UM

I (mA)

C

100

3

G

max

f (MHz)

MLC061

4

10

50

handbook, halfpage

gain
(dB)

IC= 20 mA; VCE=4V.

G

UM

40

MSG

30

20

10

0

10

2

10

10

Fig.8 Gain as a function of frequency;

typical values.

1998 Oct 02 6

50

handbook, halfpage

gain
(dB)

40

G

MSG

30

20

10

0

10

IC= 80 mA; VCE=4V.

Fig.9 Gain as a function of frequency;

UM

2

10

typical values.

MLC062

G

max

3

10

f (MHz)

4

10

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

o

90

handbook, full pagewidth

135

1

o

0.5

o

45

2

3 GHz

1.0

0.8

0.6

IC= 80 mA; VCE= 4 V; Zo=50Ω.

handbook, full pagewidth

0.2

5

0.4

0.2

180

o

0.2 0.5 2

0

0.2

1 5

o

00

5

40 MHz

135

0.5

o

1

o

90

2

o

45

MGC882

1.0

Fig.10 Common emitter input reflection coefficient (S11); typical values.

o

90

135

o

o

45

40 MHz

o

180

50 40 30 20 10

o

135

IC= 80 mA; VCE=4V.

Fig.11 Common emitter forward transmission coefficient (S21); typical values.

1998 Oct 02 7

90

3 GHz

o

o

0

o

45

MGC805

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

o

handbook, full pagewidth

90

IC= 80 mA; VCE=4V.

40 MHz

3 GHz

o

45

o

0

o

45

MGC803

o

135

o

180

0.25 0.20 0.15 0.10 0.05

o

135

o

90

Fig.12 Common emitter reverse transmission coefficient (S12); typical values.

handbook, full pagewidth

IC= 80 mA; VCE=4V;Zo=50Ω.

o

90

1.0

0.8

135

1

o

0.5

o

45

2

0.6

0.2

5

0.4

0.2

180

o

0.2 0.5 2

0

1 5

o

00

3 GHz

0.2

135

40 MHz

0.5

o

2

1

o

90

5

o

45

MGC804

1.0

Fig.13 Common emitter output reflection coefficient (S22); typical values.

1998 Oct 02 8

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

PACKAGE OUTLINE

Plastic surface mounted package; 4 leads SOT143B

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

34

Q

A

A

1

21

b

1

e

1

detail X

L

c

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

1.1

0.9

OUTLINE
VERSION

SOT143B

1

A

max

0.1

b

c

D

b

0.48

0.38

1

p

0.88

0.15

0.78

0.09

IEC JEDEC EIAJ

E

3.0

1.4

2.8

1.2

REFERENCES

e

1.9

1998 Oct 02 9

e

1.7

H

L

E

1

2.5

2.1

0.45

0.15

p

0.55

0.45

EUROPEAN

PROJECTION

ywvQ

0.1 0.10.2

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Oct 02 10

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590; BFG590/X

NOTES

1998 Oct 02 11

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© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 125104/00/03/pp12 Date of release: 1998 Oct 02 Document order number: 9397 750 04346