Datasheet BFG590W-X, BFG590W Datasheet (Philips)

DATA SH EET

ook, halfpage

M3D123

BFG590W; BFG590W/X

NPN 5 GHz wideband transistors

Product specification
Supersedes data of August 1995

1998 Oct 15

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• MATV/CATV amplifiers and RF
communications subscriber
equipment in the GHz range

• Ideally suitable for use in class-A,
(A)B and C amplifiers with either
pulsed or continuous drive.

DESCRIPTION

NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.

PINNING

PIN DESCRIPTION

BFG590W

1 collector
2 base
3 emitter
4 emitter

BFG590W/X

1 collector
2 emitter
3 base
4 emitter

age

Top view

34

21

MBK523

Fig.1 SOT343N.

MARKING

TYPE NUMBER CODE

BFG590W T1
BFG590W/X T2

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
h
C
f
G

CBO
CEO

C

tot
FE

re

T

UM

collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−200 mA
total power dissipation Ts≤ 85 °C −−500 mW
DC current gain IC= 70 mA; VCE= 8 V 60 90 250
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
transition frequency IC= 80 mA; VCE= 4 V; f = 1 GHz; T
maximum unilateral

IC= 80 mA; VCE= 4 V; f = 900 MHz; T

=25°C − 5 − GHz

amb

=25°C − 13 − dB

amb

power gain

2

|S

|

21

insertion power gain IC= 80 mA; VCE= 4 V; f = 900 MHz; T

=25°C − 11 − dB

amb

1998 Oct 15 2

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 200 mA
total power dissipation Ts≤ 85 °C; see Fig.2; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

s

150

MBG248

o

T ( C)

s

600

handbook, halfpage

P

tot

(mW)

400

200

0

0 50 100 200

Fig.2 Power derating curve.

1998 Oct 15 3

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

f

T

C

re

G

UM

2

|S

|

21

P

L1

collector-base breakdown voltage IC= 0.1 mA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 15 −−V
emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V
collector leakage current VCB=10V; IE=0 −−100 nA
DC current gain IC= 70 mA; VCE= 8 V 60 90 250
transition frequency IC= 80 mA; VCE= 4 V; f = 1 GHz;

T

=25°C

amb

− 5 − GHz

feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
maximum unilateral power gain;

note 1

insertion power gain IC= 80 mA; VCE= 4 V; f = 1 GHz;

output power at 1 dB gain
compression

IC= 80 mA; VCE= 4 V; f = 900 MHz;
T

=25°C

amb

= 80 mA; VCE= 4 V; f = 2 GHz;

I

C

T

=25°C

amb

T

=25°C

amb

IC= 80 mA; VCE= 5 V; f = 900 MHz;
RL=50Ω; T

amb

=25°C

− 13 − dB

− 7.5 − dB

− 11 − dB

− 21 − dBm

Note

1. G

is the maximum unilateral power gain, assuming S12 is zero.

UM

2

S

G

UM

10

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

dB.log=

2

22

1998 Oct 15 4

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

250

handbook, halfpage

h

FE

200

150

100

50

0

−2

10

VCE=8V.

−1

10

11010

MRA749

IC (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

2

1.2

handbook, halfpage

C

re

(pF)

0.8

0.4

0

0

IC= 0; f= 1 MHz.

210

468

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MLC057

V (V)

CB

MLC058

2

10

f

T

(GHz)

V

4 V; f = 1 GHz.

CE =

8

6

4

2

0

10

handbook, halfpage

I (mA)

C

Fig.5 Transition frequency as a function of

collector current; typical values.

1998 Oct 15 5

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

30

handbook, halfpage

gain
(dB)

20

10

0

0

f = 900 MHz; VCE=4V.

20 40 60 80

Fig.6 Gain as a function of collector current;

typical values.

MLC059

G

max

G

UM

I (mA)

C

100

12

handbook, halfpage

gain
(dB)

8

4

0

0

20 40 60 80

f = 2 GHz; VCE=4V.

Fig.7 Gain as a function of collector current;

typical values.

MLC060

G

max

G

UM

I (mA)

C

100

50

handbook, halfpage

gain
(dB)

IC= 20 mA; VCE=4V.

G

UM

40

MSG

30

20

10

0

10

Fig.8 Gain as a function of frequency;

2

10

typical values.

MLC061

G

max

3

10

f (MHz)

4

10

50

handbook, halfpage

gain
(dB)

40

G

UM

MSG

30

20

10

0

10

IC= 80 mA; VCE=4V.

2

10

3

10

G

f (MHz)

MLC062

max

4

10

Fig.9 Gain as a function of frequency;

typical values.

1998 Oct 15 6

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

o

handbook, full pagewidth

135

o

0.5

90

1

o

45

2

1.0

0.8

0.6

IC= 80 mA; VCE= 4 V; Zo=50Ω.

handbook, full pagewidth

0.2

3 GHz

5

0.4

0.2

180

o

0.2 1

0

0.5

2

0.2

5

o

00

5

40 MHz

135

0.5

o

1

o

90

2

o

45

MLC063

1.0

Fig.10 Common emitter input reflection coefficient (S11); typical values.

o

90

135

o

o

45

40 MHz

o

180

50 40 30 20 10

o

135

IC= 80 mA; VCE=4V.

Fig.11 Common emitter forward transmission coefficient (S21); typical values.

1998 Oct 15 7

90

3 GHz

o

o

0

o

45

MLC064

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

o

handbook, full pagewidth

90

IC= 80 mA; VCE=4V.

40 MHz

o

3 GHz

o

45

o

0

o

45

MLC065

o

135

0.5 0.4 0.3 0.2 0.1

o

180

o

135

90

Fig.12 Common emitter reverse transmission coefficient (S12); typical values.

handbook, full pagewidth

IC= 80 mA; VCE=4V;Zo=50Ω.

o

90

1.0

0.8

135

1

o

0.5

o

45

2

0.6

0.2

5

0.4

0.2

180

o

0.2 0.5 2

0

1 5

o

00

3 GHz

0.2

135

40 MHz

0.5

o

2

1

o

90

5

o

45

MLC066

1.0

Fig.13 Common emitter output reflection coefficient (S22); typical values.

1998 Oct 15 8

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

SPICE parameters for the BFG590W die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.341 fA
2 BF 123.5 −
3 NF 0.988 −
4 VAF 75.85 V
5 IKF 9.656 A
6 ISE 232.2 fA
7 NE 2.134 −
8 BR 10.22 −
9 NR 1.016 −
10 VAR 1.992 V
11 IKR 294.1 mA
12 ISC 211.0 aA
13 NC 0.997 −
14 RB 5.000 Ω
15 IRB 1.000 µA
16 RBM 5.000 Ω
17 RE 1.275 Ω
18 RC 920.6 mΩ

(1)

19
20
21

(1)
(1)

XTB 0.000 −
EG 1.110 eV

XTI 3.000 −
22 CJE 3.821 pF
23 VJE 600.0 mV
24 MJE 0.348 −
25 TF 13.60 ps
26 XTF 71.73 −
27 VTF 10.28 V
28 ITF 1.929 A
29 PTF 0.000 deg
30 CJC 1.409 pF
31 VJC 219.4 mV
32 MJC 0.166 −
33 XCJC 0.150 −
34 TR 2.340 ns

(1)

35

CJS 0.000 F

SEQUENCE No. PARAMETER VALUE UNIT

(1)

36
37

(1)

VJS 750.0 mV
MJS 0.000 −

38 FC 0.733 −

Note

1. These parameters have not been extracted, the
default values are shown.

B

B,E

(f)=QL

C

cb

E'

L

E

L3

E

√(f/fc)

B,E

C

MBC964

handbook, halfpage

L1 L2

B

C

be ce

QLB= 50; QLE= 50; QL

= scaling frequency = 1 GHz.

f

c

L

Fig.14 Package equivalent circuit SOT343N.

List of components (see Fig.14)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

70 fF
50 fF

115 fF
L1 0.34 nH
L2 0.10 nH
L3 0.25 nH
L

B

L

E

0.40 nH

0.40 nH

CB' C'

1998 Oct 15 9

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

PACKAGE OUTLINE

Plastic surface mounted package; 4 leads SOT343N

D

y

e

34

A

12

b

1

e

b

p

1

w M

B

E

H

E

A

1

detail X

AB

L

p

X

v M

A

Q

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

OUTLINE
VERSION

SOT343N

A

1.1

0.8

max

0.1

1

b

p

0.4

0.3

IEC JEDEC EIAJ

b

1

0.7

0.5

cD

0.25

2.2

0.10

1.8

REFERENCES

E

1.35

1.15

e

1.3

1998 Oct 15 10

H

L

e

E

1

2.2

2.0

Qwv

p

0.45

0.23

0.15

0.13

0.2y0.10.21.15

EUROPEAN

PROJECTION

ISSUE DATE

97-05-21

Philips Semiconductors Product specification

NPN 5 GHz wideband transistors BFG590W; BFG590W/X

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Oct 15 11

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone]

Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 125104/00/03/pp12 Date of release: 1998 Oct 15 Document order number: 9397 750 04347