DISCRETE SEMICONDUCTORS
DATA SH EET
BFG25A/X
NPN 5 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1997 Oct 29
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
FEATURES
• Low current consumption
(100 µA to 1 mA)
• Low noise figure
DESCRIPTION
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
handbook, 2 columns
34
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
12
Top view
Marking code: V11.
MSB014
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F noise figure I
collector-base voltage −−8V
collector-emitter voltage −−5V
collector current (DC) −−6.5 mA
total power dissipation Ts≤ 165 °C −−32 mW
DC current gain IC= 0.5 mA; VCE=1V 5080200
transition frequency IC= 1 mA; VCE=1V;
f = 500 MHz; T
amb
=25°C
maximum unilateral power gain IC= 0.5 mA; VCE=1V;
f = 1 GHz; T
= 0.5 mA; VCE=1V;
C
f = 1 GHz; Γ = Γ
I
= 1 mA; VCE= 1 V; f = 1 GHz;
C
Γ = Γ
opt
; T
amb
amb
=25°C
; T
opt
=25°C
amb
=25°C
3.5 5 − GHz
− 18 − dB
− 1.8 − dB
− 2 − dB
1997 Oct 29 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
emitter-base voltage open collector − 2V
collector current (DC) − 6.5 mA
total power dissipation Ts≤ 165 °C; note 1 − 32 mW
storage temperature −65 150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 320 K/W
Note
1. T
is the temperature at the soldering point of the collector pin.
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
re
f
T
G
UM
F noise figure I
Note
1. G
collector leakage current IE= 0; VCB=5V −−50 µA
DC current gain IC= 0.5 mA; VCE=1V 5080200
feedback capacitance IC=ic= 0; VCB= 1 V; f = 1 MHz − 0.21 0.3 pF
transition frequency IC= 1 mA; VCE=1V;
T
=25°C; f = 500 MHz
amb
maximum unilateral power gain
(note 1)
is the maximum unilateral power gain, assuming S12 is zero and
UM
IC= 0.5 mA; VCE=1V;
f = 1 GHz; T
= 0.5 mA; VCE= 1 V; f = 1 GHz;
C
Γ = Γ
I
Γ = Γ
; T
opt
= 1 mA; VCE= 1 V; f = 1 GHz;
C
; T
opt
amb
amb
amb
=25°C
=25°C
=25°C
G
UM
3.5 5 − GHz
− 18 − dB
− 1.8 − dB
− 2 − dB
10 log
--------------------------------------------------------------
1
S
–
11
2
S
21
2
1
–
dB=
2
S
22
1997 Oct 29 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
40
handbook, halfpage
P
tot
(mW)
30
20
10
0
0 50 100 200
150
Fig.2 Power derating curve.
MRC038 - 1
Ts (oC)
100
handbook, halfpage
h
FE
80
60
40
20
0
10
VCE=1V.
3
2
10
1
110
I (mA)
C
Fig.3 DC current gain as a function of collector
current; typical values.
MCD138
10
0.3
handbook, halfpage
C
re
(pF)
0.2
0.1
0
0
IC=ic= 0; f= 1 MHz.
246
MCD139
V (V)
CB
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
1997 Oct 29 4
handbook, halfpage
6
f
T
(GHz)
4
2
0
0
VCE= 1 V; f = 500 MHz; T
12 4
amb
=25°C.
Fig.5 Transition frequency as a function of
collector current; typical values.
3
MCD140
I (mA)
C
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
30
handbook, halfpage
G
gain
(dB)
20
10
0
VCE= 1 V; f = 500 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
0.5 1.5 2.0
0 1.0 2.5
UM
MSG
Fig.6 Gain as a function of collector current;
typical values.
MCD141
I (mA)
C
20
handbook, halfpage
gain
(dB)
15
10
5
0
0 1.0 2.5
0.5 1.5 2.0
VCE= 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
G
UM
MSG
Fig.7 Gain as a function of collector current;
typical values.
MCD142
I (mA)
C
3
f (MHz)
MCD143
4
10
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10 10
IC= 0.5 mA; VCE=1V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
G
UM
MSG
2
10
Fig.8 Gain as a function of frequency;
typical values.
1997 Oct 29 5
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10 10
IC= 1 mA; VCE=1V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
G
UM
MSG
2
Fig.9 Gain as a function of frequency;
typical values.
MCD144
3
10
f (MHz)
4
10
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
handbook, halfpage
4
F
(dB)
3
2
1
0
−1
10
VCE=1V.
f = 2 GHz
1 GHz
500 MHz
110
IC (mA)
Fig.10 Minimum noise figure as a function of
collector current; typical values.
MCD145
handbook, halfpage
4
F
(dB)
3
2
1
0
10
VCE=1V.
IC = 2 mA
1 mA
0.5 mA
2
3
10
f (MHz)
Fig.11 Minimum noise figure as a function of
frequency; typical values.
MCD146
4
10
handbook, full pagewidth
0.5
0.2
+
j
0
– j
0.2
IC= 1 mA; VCE= 1 V; f = 500 MHz; ZO=50Ω;Maximum stable gain =15.6 dB; F
unstable region
0.5
MSG
15.6 dB
14 dB
12 dB
Fig.12 Common emitter noise figure circles; typical values.
1
2
6 dB
4 dB
2.5 dB
101520.50.2
*
2
1
= 1.9 dB; Γ
min
= 0.85, 5°; Rn/50 = 2.4.
opt
5
5
MCD147
stability
circle
10
∞
F = 1.9 dB
10
OPT
min
1997 Oct 29 6
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
handbook, full pagewidth
0.5
0.2
+
j
0
– j
0.2
IC= 1 mA; VCE= 1 V; f = 1000 MHz; ZO=50Ω;Maximum stable gain =12.4 dB; F
unstable region
0.5
0.5 10.2 1052
MSG
12.4 dB
11 dB
9 dB
Fig.13 Common emitter noise figure circles; typical values.
1
2
stability
6 dB
4 dB
3 dB
*
circle
5
10
OPT
F = 2 dB
min
∞
10
5
2
1
= 2 dB; Γ
min
MCD148
= 0.78, 14°; Rn/50 = 2.6.
opt
handbook, full pagewidth
0.5
unstable region
0.2
+ j
0
0
– j
0.2
0.5
IC= 1 mA; VCE= 1 V; f = 2000 MHz; ZO=50Ω; Maximum stable gain= 8.9dB; F
0.5 10.2 1052
MSG
9 dB
7.5 dB
6 dB
Fig.14 Common emitter noise figure circles; typical values.
1
6 dB
10.2 10520.5
1
4 dB
3 dB
= 2.4 dB; Γ
min
stability
circle
2
F = 2.4 dB
*
2
MCD149
= 0.72, 38°; Rn/50 = 1.9.
opt
OPT
min
5
10
∞
10
5
1997 Oct 29 7
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
handbook, full pagewidth
IC= 1 mA; VCE= 1 V; Zo=50Ω.
1
0.5
0.2
+ j
0
– j
0.2
0.5
0.5 10.2 1052
3 GHz
1
2
40 MHz
2
5
10
∞
10
5
MCD150
Fig.15 Common emitter input reflection coefficient (S11); typical values.
handbook, full pagewidth
IC= 1 mA; VCE=1V.
o
90
o
45
o
0
54321
_
o
45
MCD151
180
o
135
3 GHz
o
40 MHz
_
o
135
_
o
90
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
1997 Oct 29 8
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
o
90
handbook, full pagewidth
IC= 1 mA; VCE=1V.
handbook, full pagewidth
180
o
135
3 GHz
o
_
o
135
0.10.20.30.40.5
40 MHz
_90o
_
45
45
MCD153
o
o
0
o
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
1
0.5
2
0.2
+ j
0
– j
0.2
0.5
IC= 1 mA; VCE= 1 V; Zo=50Ω.
0.5 10.2 1052
Fig.18 Common emitter output reflection coefficient (S22); typical values.
1997 Oct 29 9
1
3 GHz
2
40 MHz
MCD152
5
10
∞
10
5
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads SOT143B
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
34
Q
A
A
1
21
b
1
e
1
detail X
L
c
p
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
1.1
0.9
OUTLINE
VERSION
SOT143B
1
A
max
0.1
b
c
D
3.0
1.4
2.8
1.2
REFERENCES
E
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
e
1.9
1997 Oct 29 10
e
1.7
H
L
E
1
2.5
2.1
0.45
0.15
p
0.55
0.45
EUROPEAN
PROJECTION
ywvQ
0.1 0.10.2
ISSUE DATE
97-02-28
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 29 11
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© Philips Electronics N.V. 1997 SCA55
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 127127/00/03/pp12 Date of release: 1997 Oct 29 Document order number: 9397 75002767
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