How it Works
Datasheet
Loading...
BFG197-XR
Datasheet (Philips)
13 pgs95.31 Kb0
Table of contents
Loading...

Datasheet BFG197-XR, BFG197-X, BFG197 Datasheet (Philips)

Download
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG197; BFG197/X; BFG197/XR
NPN 7 GHz wideband transistor
Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14
1995 Sep 13
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor

FEATURES

• High power gain
• Low noise figure
• Gold metallization ensures
excellent reliability.

DESCRIPTION

The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.

PINNING

PIN DESCRIPTION
BFG197 (Fig.1) Code: V5
1 collector 2 base 3 emitter 4 emitter
BFG197/X (Fig.1) Code: V13
1 collector 2 emitter 3 base 4 emitter
BFG197A/XR (Fig.2) Code: V35
1 collector 2 emitter 3 base 4 emitter
BFG197; BFG197/X;
BFG197/XR
handbook, 2 columns
12
Top view
Fig.1 SOT143.
handbook, 2 columns
34
MSB014
43
12
Top view
MSB035
Fig.2 SOT143XR.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F noise figure Γ
collector-base voltage open emitter −−20 V collector-emitter voltage open base −−10 V collector current DC value −−100 mA total power dissipation up to Ts=75°C; note 1 −−350 mW feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz − 0.85 − pF transition frequency IC= 50 mA; VCE= 4 V; f = 2 GHz − 7.5 − GHz maximum unilateral
power gain
IC= 50 mA; VCE=6V; T
=25°C; f = 1 GHz
amb
I
= 50 mA; VCE=6V;
C
T
=25°C; f = 2 GHz
amb
= Γ
; IC= 15 mA; VCE=8V;
s
opt
T
=25°C; f = 1 GHz
amb
− 16 − dB
− 10 − dB
− 1.7 − dB
Note
1. T
is the temperature at the soldering point of the collector tab.
S
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT
R
th j-s
Note
1. T
S
collector-base voltage open emitter − 20 V collector-emitter voltage open base − 10 V emitter-base voltage open collector − 2.5 V collector current DC value, continuous − 100 mA total power dissipation up to Ts=75°C; note 1 − 350 mW storage temperature range −65 +150 °C junction operating temperature − 175 °C
from junction to soldering point; note 1 290 K/W
is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure Γ
d
2
collector leakage current IE= 0; VCB=5V −−100 nA DC current gain IC= 50 mA; VCE=5V 40 110 − collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 1.5 − pF emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 3.3 − pF feedback capacitance IC=ic= 0; VCB=8V; f=1MHz − 0.85 − pF transition frequency IC= 50 mA; VCE= 4 V; f = 2 GHz − 7.5 − GHz maximum unilateral power gain
(note 1)
second order intermodulation
IC= 50 mA; VCE=6V; T
=25°C; f = 1 GHz
amb
= 50 mA; VCE=6V;
I
C
T
=25°C; f = 2 GHz
amb
= Γ
; IC= 15 mA; VCE=8V;
s
opt
T
=25°C; f = 1 GHz
amb
= Γ
Γ
T
; IC= 50 mA; VCE=6V;
s
opt
=25°C; f = 2 GHz
amb
− 16 − dB
− 10 − dB
− 1.7 − dB
− 2.3 − dB
VCE=6V;Vo= 50 dBmV; −−51 − dB
distortion
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
G
UM
10
-----------------------------------------------------------­1s
–()1s
2
s
21
2
11
2
–()
22
dB.log=
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
150
MBC983 - 2
o
Ts(
C)
800
handbook, halfpage
P
tot
(mW)
600
400
200
0
0 50 100 200
160
handbook, halfpage
h
FE
120
80
40
0
BFG197; BFG197/X;
BFG197/XR
MBB267
40 120
80
I (mA)
C
1.2
handbook, halfpage
C
re
(pF)
0.8
0.4
0
0
VCE=5V.
Fig.4 DC current gain as a function of collector
Fig.3 Power derating curve.
MCD155
210
468
V (V)
CB
handbook, halfpage
8
f
T
(GHz)
6
4
2
0
02040 80
current.
60
MCD156
I (mA)
C
IC=ic= 0; f= 1MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
VCE= 4 V; T
=25°C; f = 2 GHz.
amb
Fig.6 Transition frequency as a function of
collector current.
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
60
MCD157
I (mA)
C
20
handbook, halfpage
gain (dB)
15
10
5
0
02040 80
MSG
G
max
G
UM
50
handbook, halfpage
gain (dB)
40
30
20
10
0
10
MSG
BFG197; BFG197/X;
BFG197/XR
MCD158
G
UM
G
max
2
10
3
10
f (MHz)
10
4
VCE= 4 V; f = 1 GHz.
Fig.7 Gain as a function of collector current.
50
handbook, halfpage
gain (dB)
40
30
20
10
0
10
MSG
G
UM
G
max
2
10
3
10
f (MHz)
MCD159
VCE= 4 V; IC=50mA.
Fig.8 Gain as a function of frequency.
max
f (MHz)
MCD160
4
10
50
handbook, halfpage
gain (dB)
40
30
20
10
4
10
0
10
MSG
G
UM
G
2
10
3
10
VCE= 6 V; IC= 50mA.
Fig.9 Gain as a function of frequency.
VCE= 8V; IC=30mA.
Fig.10 Gain as a function of frequency.
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
MCD161
f = 2 GHz
1 GHz
500 MHz
C
F
(dB)
4
3
2
1
0
handbook, halfpage
101
I (mA)
100
(dB)
F
4
3
2
I = 50 mA
C
20 mA
1
10 mA
0
2
10
handbook, halfpage
BFG197; BFG197/X;
BFG197/XR
MCD162
3
10
f (MHz)
4
10
VCE=6V.
Fig.11 Minimum noise figure as a function of
collector current.
45
handbook, halfpage
d
im
(dB)
50
55
60
65
70
20 120
40 60 80 100
MBB266
I (mA)
C
VCE=6V.
Fig.12 Minimum noise figure as a function of
frequency.
35
handbook, halfpage
d
2
(dB)
40
45
50
55
60
20 120
40 60 80 100
MBB268
I (mA)
C
VCE=8V; Vo= 700 mV; f
= 793.25 MHz; T
(p+q−r)
amb
=25°C.
Fig.13 Intermodulation distortion, typical values.
VCE= 8 V; Vo= 50 mV; f
(p+q−r)
= 810MHz; T
amb
=25°C.
Fig.14 Second order intermodulation distortion,
typical values.
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
handbook, full pagewidth
0.5
MSG
23 dB
0.2
+
j
unstable region
0
–
j
stability
circle
0.2
0.5
4 dB
3 dB
2 dB
OPT
*
F = 1.7 dB
min
0.50.2 10521
BFG197; BFG197/X;
BFG197/XR
1
2
5
10
∞
10
5
2
Zo=50Ω. Maximum stable gain = 23 dB.
handbook, full pagewidth
+ j
– j
G
max
15.8 dB
1
MCD163
Fig.15 Noise circle figure.
1
0.5
5 dB
4 dB
0.2
0
3 dB
OPT
*
F = 2.4 dB
min
*
15 dB
0.2
14 dB
2
5
10
∞
105210.2 0.5 10
5
0.5
Zo=50Ω.
Fig.16 Noise circle figure.
2
1
MCD164
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
handbook, full pagewidth
0.5
0.2
F = 3.5 dB
min
+ j
0
– j
0.2
G
max
9.7 dB
0.2
0.2
0.5
OPT
*
*
6 dB
5 dB
4 dB
0.5 1 1052
8 dB
9 dB
BFG197; BFG197/X;
BFG197/XR
1
2
5
10
∞
10
5
2
1
MCD165
Zo=50Ω.
handbook, full pagewidth
Fig.17 Noise circle figure.
1
0.5
3 GHz
0.2
+
j
0
–
j
0.2
0.5
0.5 1 10520.2
40 MHz
2
5
10
∞
10
5
2
VCE= 6 V; IC= 50mA.
Fig.18 Common emitter input reflection coefficient (S11).
1
MCD166
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
handbook, full pagewidth
o
135
o
180
_o
135
40 MHz
BFG197; BFG197/X;
BFG197/XR
o
90
o
45
20406080100
3 GHz
_
o
45
o
0
VCE= 6 V; IC= 50mA.
handbook, full pagewidth
_90o
MCD167
Fig.19 Common emitter forward transmission coefficient (S21).
o
90
180
o
135
o
_
o
135
0.040.080.120.160.20
40 MHz
3 GHz
o
45
_
o
45
o
0
VCE= 6 V; IC= 50mA.
_90o
Fig.20 Common emitter reverse transmission coefficient (S12).
MCD169
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
handbook, full pagewidth
0.5
0.2
+
j
0
–
j
0.2
3 GHz
0.5
BFG197; BFG197/X;
BFG197/XR
1
2
5
10
0.5 10.2 1052
∞
10
5
40 MHz
2
VCE= 6 V; IC= 50mA.
1
MCD168
Fig.21 Common emitter output reflection coefficient (S22).
1995 Sep 13 10
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor

SPICE parameters for BFQ195 crystal

SEQUENCE No. PARAMETER VALUE UNIT
1 IS 1.972 fA 2 BF 150.0 − 3 NF 990.8 m 4 VAF 54.72 V 5 IKF 30.00 A 6 ISE 47.82 fA 7 NE 1.580 − 8 BR 165.4 − 9 NR 993.9 m 10 VAR 2.351 V 11 IKR 9.967 A 12 ISC 3.510 aA 13 NC 1.124 − 14 RB 5.000 Ω 15 IRB 1.000 µA 16 RBM 5.000 Ω 17 RE 368.1 mΩ 18 RC 937.2 mΩ 19 (note 1) XTB 0.000 − 20 (note 1) EG 1.110 EV 21 (note 1) XTI 3.000 − 22 CJE 3.388 pF 23 VJE 600.0 mV 24 MJE 302.9 m 25 TF 11.06 ps 26 XTF 30.02 − 27 VTF 1.649 V 28 ITF 401.9 mA 29 PTF 0.000 deg 30 CJC 1.190 pF 31 VJC 160.1 mV 32 MJC 89.44 m 33 XCJC 130.0 m 34 TR 2.148 ns 35 (note 1) CJS 0.000 F 36 (note 1) VJS 750.0 mV 37 (note 1) MJS 0.000 − 38 FC 785.9 m
BFG197; BFG197/X;
BFG197/XR
handbook, halfpage
L1 L2
B
C
QLB= 50; QLE= 50. QL
(f) = QL
B,E
Fc = scaling frequency = 1000 MHz.
L
be ce
√ (f/Fc).
B,E
Fig.22 Package equivalent circuit SOT143;
SOT143R.
List of components (see Fig.22)
DESIGNATION VALUE UNIT
C
be
C
cb
C
ce
L1 0.12 nH L2 0.21 nH L3 0.06 nH L
B
L
E
C
cb
B
E'
L
E
L3
E
84 fF 17 fF 191 fF
0.95 nH
0.40 nH
CB' C'
C
MBC964
Note
1. These parameters have not been extracted, the default values are shown.
1995 Sep 13 11
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor

PACKAGE OUTLINES

handbook, full pagewidth
10
max
0.75
0.60
o
max
1.1 30
max
0.150
0.090
0.1
max
10
max
o
BFG197; BFG197/X;
BFG197/XR
3.0
2.8
1.9
43
o
1
2
0.88
0
0.1
TOP VIEW
0.48
1.7
0
0.1
B
A
1.4
1.2
M0.1 AB
2.5
max
0.2
MBC845
M
AB
Dimensions in mm.
handbook, full pagewidth
0.40
0.25
10
max
Fig.23 SOT143.
3.0
0.150
0.090
30
max
o
0.1
max
10
max
o
0.48
0.38
o
1.1
max
2.8
1.9
34
2
1
0.88
0.78
1.7
M0.1 B
TOP VIEW
B
A
1.4
1.2
MBC844
2.5
max
0.2
A
M
Dimensions in mm.
Fig.24 SOT143R.
1995 Sep 13 12
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR

DEFINITIONS

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 Sep 13 13
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use