Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
N-channel silicon junction
field-effect transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 29
Page 2
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors
FEATURES
• Interchangeability of drain and source connections
• High I
• Frequency up to 450 MHz.
APPLICATIONS
• VHF and UHF amplifiers
• Mixers
• General purpose switching.
DESCRIPTION
General purpose N-channel symmetrical silicon junction
field-effect transistors in a plastic TO-92 variant package.
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
DSS
range
CAUTION
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
PINNING
PIN SYMBOL DESCRIPTION
BF246A; BF246B; BF246C
1 d drain
2 g gate
3 s source
BF247A; BF247B; BF247C
1 d drain
2 s source
3 g gate
handbook, halfpage
1
2
3
MAM257
Fig.1 Simplified outline (TO-92 variant)
and symbol.
g
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
DSS
DS
GSoff
drain-source voltage −−±25 V
gate-source cut-off voltage ID= 10 nA; VDS=15V −0.6 −−14.5 V
drain current VDS= 15 V; VGS=0
BF246A; BF247A 30 − 80 mA
BF246B; BF247B 60 − 140 mA
BF246C; BF247C 110 − 250 mA
P
tot
y
forward transfer admittance ID= 10 mA; VDS=15V;
fs
total power dissipation up to T
=50°C −−400 mW
amb
8 −−mS
f=1kHz
C
rs
reverse transfer capacitance ID= 10 mA; VDS=15V;
− 3.5 − pF
f=1MHz
T
j
operating junction temperature −−150 °C
1996 Jul 29 2
Page 3
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
G
P
tot
T
stg
T
j
drain-source voltage −±25 V
gate current − 10 mA
total power dissipation up to T
=50°C − 400 mW
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 250 K/W
STATIC CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
V
GSoff
V
GS
gate-source breakdown voltage IG= −1 µA; VDS=0 −25 −−V
gate-source cut-off voltage ID= 10 nA; VDS=15V −0.6 −−14.5 V
gate-source voltage ID= 200 µA; VDS=15V
BF246A; BF247A −1.5 −−4.0 V
BF246B; BF247B −3.0 −−7.0 V
BF246C; BF247C −5.5 −−12.0 V
I
DSS
drain current VGS= 0; VDS= 15 V; note 1
BF246A; BF247A 30 − 80 mA
BF246B; BF247B 60 − 140 mA
BF246C; BF247C 110 − 250 mA
I
GSS
gate leakage current VGS= −15 V; VDS=0 −−−5nA
Note
1. Measured under pulse conditions: t
= 300 µs; δ≤0.02.
p
DYNAMIC CHARACTERISTICS
=25°C; unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
is
C
rs
C
os
y
forward transfer admittance ID= 10 mA; f = 1 kHz; VDS=15V 8 17 − mS
fs
f
gfs
input capacitance ID= 10 mA; f = 1 MHz; VDS=15V − 11 − pF
reverse transfer capacitance ID= 10 mA; f = 1 MHz; VDS=15V − 3.5 − pF
output capacitance ID= 10 mA; f = 1 MHz; VDS=15V − 5 − pF
cut-off frequency gfs= 0.7 of its value at 1 kHz; VGS=0 − 450 − MHz
1996 Jul 29 3
Page 4
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors
PACKAGE OUTLINE
handbook, full pagewidth
4.2 max
1.7
1.4
1
4.8
max
2.54
2
3
0.66
0.56
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
5.2 max 12.7 min
(1)
2.5 max
MBC015 - 1
0.40
min
0.48
0.40
Dimensions in mm.
(1) Terminal dimensions in this zone are uncontrolled.
Fig.2 TO-92 variant.
1996 Jul 29 4
Page 5
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
1996 Jul 29 5
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