Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BF1108; BF1108R
Silicon RF switches
Product specification
Supersedes data of 1999 Aug 19
1999 Nov 18
Page 2
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
FEATURES
• Specially designed for low loss RF switching
up to 1 GHz.
APPLICATIONS
handbook, 2 columns
34
• Various RF switching applications such as:
– Passive loop through for VCR tuner
– Transceiver switching.
DESCRIPTION
These switches are a combination of a depletion type
field-effect transistor and a bandswitching diode in an
SOT143B (BF1108) or SOT143R (BF1108R) package.
The low loss and high isolation capabilities of these
devices provide excellent RF switching functions. The
gate of theMOSFET can be isolated from ground with the
diode, resulting in low losses. Integrated diodes between
gate and source and between gate and drain protect
against excessive input voltage surges.
PINNING
PIN DESCRIPTION
1 FET gate; diode anode
2 diode cathode
3 source; note 1
4 drain; note 1
Marking code: NGp.
Fig.1 Simplified outline (SOT143B).
handbook, 2 columns
Marking code: NHp.
Fig.2 Simplified outline (SOT143R).
12
Top view
Top view
MSB014
43
12
MSB035
Note
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
21(on)
21(off)
DSon
2
losses (on-state) RS=RL=50Ω;
2
isolation (off-state) 30 −−dB
f≤1 GHz
−−2dB
drain-source on-resistance VCS= 0; ID=1mA − 12 20 Ω
pinch-off voltage ID=20µA; VDS=1V −−3−4V
s
s
R
V
GSoff
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Nov 18 2
Page 3
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
FET
V
DS
V
SD
V
DG
V
SG
I
D
Diode
V
R
I
F
FET and diode
T
stg
T
j
drain-source voltage − 3V
source-drain voltage − 3V
drain-gate voltage − 7V
source-gate voltage − 7V
drain current − 10 mA
continuous reverse voltage − 35 V
continuous forward current − 100 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 250 K/W
Note
1. Soldering point of FET gate and diode anode lead.
STATIC CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
FET
V
(BR)GSS
V
GSoff
I
DSX
I
GSS
R
DSon
gate-source breakdown voltage VDS= 0; IGS= 0.1 mA 7 −−V
gate-source pinch-off voltage VDS=1V; ID=20µA −−3−4V
drain-source leakage current VGS= −5 V; VDS=2V −−10 µA
gate cut-off current VGS= −5 V; VDS=0 −−100 nA
drain-source on-state resistance VGS= 0; ID=1mA − 12 20 Ω
Diode
V
F
I
R
forward voltage IF=10mA −−1V
reverse current VR=25V −−50 nA
=20V;T
V
R
=75°C −−1µA
amb
1999 Nov 18 3
Page 4
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
DYNAMIC CHARACTERISTICS
Common cathode; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
FET and diode
s
s
R
C
C
2losses (on-state) VSC=VDC= 0; RS=RL=50Ω;
21(on)
2isolation (off-state) VSC=VDC=5V; RS=RL=50Ω;
21(off)
DSon
ic
oc
drain-source on-resistance VCS= 0; ID=1mA − 12 20 Ω
input capacitance; note 2 VSC=VDC=5V; IF= 1 mA; f = 1 MHz − 1 − pF
output capacitance; note 2 VSC=VDC=5V; IF= 1 mA; f = 1 MHz − 1 − pF
Diode
C
d
r
D
diode capacitance f = 1 MHz; VR=0 − 1.1 − pF
diode forward resistance IF= 2 mA; f = 100 MHz; note 3 −−0.7 Ω
amb
=25°C.
IF= 0; note 1; f ≤ 1 GHz
V
SC=VDC
= 0; RS=RL=50Ω; IF=0;
f = 1 GHz
V
SC=VDC
= 0; RS=RL=75Ω; IF=0;
f≤1 GHz
IF= 1 mA; f ≤ 1 GHz
V
SC=VDC
=5V; RS=RL=50Ω;
IF= 1 mA; f = 1 GHz
V
SC=VDC
=5V; RS=RL=75Ω;
IF= 1 mA; f ≤ 1 GHz
V
SC=VDC
V
SC=VDC
= 0; IF= 0; f = 1 MHz − 0.65 0.9 pF
= 0; IF= 0; f = 1 MHz − 0.65 0.9 pF
−−2dB
− 1.3 − dB
−−3dB
30 −−dB
− 38 − dB
30 −−dB
Notes
1. I
= diode forward current.
F
2. Cic is the series connection of Csgand Cgc; Coc is the series connection of Cdgand Cgc.
3. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
handbook, halfpage
ds s
MBL027
g, a c c g, a
SOT143B SOT143R
d
Fig.3 Simplified diagram.
1999 Nov 18 4
Page 5
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
handbook, halfpage
0
2
|s
|
21(on)
(dB)
−1
−2
−3
−4
0 400 1200
VSC=VDC= 0 V; RS=RL=50Ω;IF= 0 mA (diode forward current);
Measured in test circuit (Fig.6).
800
MGS357
f (MHz)
Fig.4 Losses (on-state) as a function of
frequency; typical values.
handbook, halfpage
0
2
|s
|
21(off)
(dB)
−20
−40
−60
0 400 1200
VSC=VDC= 5 V; RS=RL=50Ω;IF= 1 mA (diode forward current);
Measured in test circuit (Fig.6).
800
MGS358
f (MHz)
Fig.5 Isolation (off-state) as a function of
frequency; typical values.
handbook, full pagewidth
BF1108/BF1108R
50 Ω
input
On-state: V = 0 V.
Off-state: V = 5 V.
1 nF 1 nF
Fig.6 Test circuit.
1999 Nov 18 5
V
V
1 nF
100 kΩ
47 kΩ
4.7 kΩ
100 kΩ
1 nF
50 Ω
output
MBL028
Page 6
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads SOT143B
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
34
Q
A
A
1
21
b
1
e
1
detail X
L
c
p
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
1.1
0.9
OUTLINE
VERSION
SOT143B
1
A
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
e
1.9
1999 Nov 18 6
e
1.7
H
L
E
1
2.5
2.1
0.45
0.15
p
0.55
0.45
EUROPEAN
PROJECTION
ywvQ
0.1 0.10.2
ISSUE DATE
97-02-28
Page 7
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
Plastic surface mounted package; reverse pinning; 4 leads SOT143R
D
y
e
b
p
w M
B
v M
A
B
E
H
E
A
X
43
Q
A
A
1
c
12
L
b
1
e
1
detail X
p
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT143R SC-61B
max
0.1
1
b
c
0.15
0.09
D
3.0
2.8
REFERENCES
b
1
p
0.88
0.48
0.78
0.38
IEC JEDEC EIAJ
1.4
1.2
E
e
1.9
1999 Nov 18 7
e
1.7
H
L
E
1
2.5
2.1
0.55
0.25
p
0.45
0.25
EUROPEAN
PROJECTION
ywvQ
0.1 0.10.2
ISSUE DATE
97-03-10
99-09-13
Page 8
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Nov 18 8
Page 9
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
NOTES
1999 Nov 18 9
Page 10
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
NOTES
1999 Nov 18 10
Page 11
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
NOTES
1999 Nov 18 11
Page 12
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1999
Internet: http://www.semiconductors.philips.com
68
Printed in The Netherlands 125004/03/pp12 Date of release: 1999 Nov 18 Document order number: 9397 750 06477
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