Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BF1109; BF1109R; BF1109WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1997 Sep 03
File under Discrete Semiconductors, SC07
1997 Dec 08
Page 2
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
FEATURES
• Short channel transistor with high
forward transfer admittance to input
capacitance ratio
• Low noise gain controlled amplifier
up to 1 GHz
• Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
• VHF and UHF applications with 9 V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1109,
BF1109R and BF1109WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
PIN DESCRIPTION
1 source
2 drain
3 gate 2
4 gate 1
12
Top view
BF1109 marking code: NFp.
Fig.1 Simplified outline
(SOT143B).
34
MSB014
handbook, 2 columns
Top view
BF1109R marking code: NBp.
Fig.2 Simplified outline
(SOT143R).
page
21
Top view
BF1109WR marking code: NB.
Fig.3 Simplified outline
(SOT343R).
43
12
MSB035
43
MSB842
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
I
D
P
tot
forward transfer admittance − 30 − mS
y
fs
C
ig1-ss
C
rss
drain-source voltage −−11 V
drain current (DC) −−30 mA
total power dissipation T
≤ 80 °C −−200 mW
amb
input capacitance at gate 1 − 2.2 2.7 pF
reverse transfer capacitance f = 1 MHz − 25 40 fF
F noise figure f = 800 MHz − 1.5 2.5 dB
X
mod
T
j
cross-modulation input level for k = 1% at 40 dB AGC 100 −−dBµV
operating junction temperature −−150 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1997 Dec 08 2
Page 3
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board.
drain-source voltage − 11 V
drain current (DC) − 30 mA
gate 1 current −±10 mA
gate 2 current −±10 mA
total power dissipation T
≤ 80 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
operating junction temperature − +150 °C
250
handbook, halfpage
P
tot
(mW)
200
150
100
50
0
0 40 80 160
120
T
amb
Fig.4 Power derating curve.
MGM243
(°C)
1997 Dec 08 3
Page 4
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)DSS
V
(BR)G1-SS
V
(BR)G2-SS
V
G2-S (th)
I
DSX
I
G1-SS
I
G2-SS
thermal resistance from junction to ambient in free air note 1 350 K/W
thermal resistance from junction to soldering point 200 K/W
drain-source breakdown voltage V
gate 1-source breakdown voltage V
gate 2-source breakdown voltage V
gate 2-source threshold voltage V
self-biasing drain current V
gate 1 cut-off current V
gate 2 cut-off current V
G1-S=VG2-S
= 0; I
G2-S
G1-S=VDS
=9V; VDS=9V; ID=20µA 0.3 1.2 V
G1-S
=4V; VDS= 9 V 8 16 mA
G2-S
=9V; V
G1-S
G1-S=VDS
= 0; ID=10µA11−V
=10µA; ID=0 11 − V
G1-S
= 0; I
G2-S
= 0; V
=10µA11−V
G2-S
= 0; ID=0 − 20 nA
=9V − 20 nA
G2-S
DYNAMIC CHARACTERISTICS
Common source; T
=25°C; V
amb
= 4 V; VDS= 9 V; self-biasing current; unless otherwise specified.
G2-S
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
y
forward transfer admittance pulsed; Tj=25°C2430−mS
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
F noise figure f = 800 MHz; Y
G
p
X
mod
input capacitance at gate 1 f = 1 MHz − 2.2 2.7 pF
input capacitance at gate 2 f = 1 MHz − 1.5 − pF
output capacitance f = 1 MHz − 1.3 − pF
reverse transfer capacitance f = 1 MHz − 25 40 fF
S=YS opt
power gain GS= 2 mS; BS=B
BL=B
G
S
BL=B
; f = 200 MHz; see Fig.16
L opt
= 3.3 mS; BS=B
; f = 800 MHz; see Fig.17
L opt
; GL= 0.5 mS;
S opt
; GL= 1 mS;
S opt
cross-modulation input level for k = 1% at 0 dB AGC;
fw= 50 MHz; f
= 60 MHz; see Fig.18
unw
input level for k = 1% at 40 dB AGC;
f
= 50 MHz; f
w
= 60 MHz; see Fig.18
unw
− 1.5 2.5 dB
− 38 − dB
− 20 − dB
85 −−dBµV
100 −−dBµV
1997 Dec 08 4
Page 5
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
25
handbook, halfpage
I
D
(mA)
20
15
10
5
0
010
V
=4V.
G2-S
Tj=25°C.
2468
Fig.5 Output characteristics; typical values.
V
G1
MDA613
= 1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1 V
VDS (V)
40
handbook, halfpage
I
D
(mA)
30
V
= 4 V
G2-S
20
10
0
0
0.5 2.5
VDS=9V.
Tj=25°C.
1 1.5 2
Fig.6 Transfer characteristics; typical values.
MDA614
3.5 V
3 V
2.5 V
2 V
1.5 V
1 V
VG1 (V)
V
G2-S
2.5 V
= 4 V
I
D (mA)
MDA615
3.5 V
3 V
40
handbook, halfpage
y
fs
(mS)
30
20
10
0
0 102030
VDS=9V.
Tj=25°C.
2 V
Fig.7 Forward transfer admittance as a function
of drain current; typical values.
16
handbook, halfpage
I
D
(mA)
12
(2)
(3)
(1)
8
(4)
4
0
0
(1) VDS=9V.
(2) VDS=7V.
15
234
(3) VDS=5V.
(4) VDS=3V.
Fig.8 Drain current as a function of gate 2
voltage; typical values.
V
MDA616
G2-S
(V)
1997 Dec 08 5
Page 6
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
16
handbook, halfpage
I
D
(mA)
12
8
4
0
02 10
V
=4V.
G2-S
Tj=25°C.
46 8
MDA617
VDS (V)
Fig.9 Drain current as a function of drain-source
voltage; typical values.
−2
MDA618
IG1 (µA)
16
handbook, halfpage
I
D
(mA)
12
8
4
0
−8 −6 −40
VDS= 9 V; V
= 4 V; Tj=25°C.
G2-S
Fig.10 Drain current as a function of gate 1 current;
typical values.
120
handbook, halfpage
V
unw
(dBµV)
110
100
90
80
020
VDS= 9 V; V
= 60 MHz; T
f
unw
G2nom
= 4 V; I
amb
Dnom
=25°C.
40 60
gain reduction (dB)
= 12 mA; fw= 50 MHz;
MDA619
Fig.11 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values (see Fig.18).
1997 Dec 08 6
Page 7
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
2
10
handbook, halfpage
y
is
MDA620
(mS)
10
b
is
1
g
−1
10
−2
10
10
VDS= 9 V; V
ID= 12 mA; T
G2-S
amb
=4V.
=25°C.
is
2
10
f (MHz)
Fig.12 Input admittance as a function of frequency;
typical values.
3
10
handbook, halfpage
MDA621
|yrs|
(mS)
2
10
|yrs|
ϕ
rs
10
3
10
1
10
VDS= 9 V; V
ID= 12 mA; T
G2-S
amb
=4V.
=25°C.
2
10
f (MHz)
3
−10
ϕ
rs
(deg)
2
−10
−10
−1
3
10
Fig.13 Reverse transfer admittance and phase as
a function of frequency; typical values.
2
10
handbook, halfpage
MDA622
|yfs|
(mS)
10
1
10 10
VDS= 9 V; V
ID= 12 mA; T
G2-S
amb
=4V.
=25°C.
2
|yfs|
ϕ
fs
f (MHz)
Fig.14 Forward transfer admittance and phase as
a function of frequency; typical values.
−10
ϕ
(deg)
2
fs
10
handbook, halfpage
y
os
(mS)
1
b
os
MDA623
−10
−1
10
g
os
−1
3
10
−2
10
10
VDS= 9 V; V
ID= 12 mA; T
G2-S
amb
=4V.
=25°C.
2
10
f (MHz)
3
10
Fig.15 Output admittance as a function of
frequency; typical values.
1997 Dec 08 7
Page 8
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
1 nF
1 nF
pF
V
AGC
47 kΩ
G2
BF1109
BF1109R
G1
BF1109WR
15
BB405
330 kΩ
1 nF
V
input
tun
handbook, full pagewidth
5.5 pF
input
50 Ω
VDS= 9 V, GS= 2 mS, GL= 0.5 mS, f = 200 MHz.
L1 = 45 nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire.
L2 = 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set GL= 0.5 mS.
C1 adjusted for GS= 2 mS.
C1
L1
1 nF
D
S
1 nF
1 nF
V
DS
2 µH
1 nF
output
L2
10 pF
BB405
50 Ω
330 kΩ
1 nF
V
output
tun
MDA624
Fig.16 Gain test circuit.
handbook, full pagewidth
1 nF
input
50 Ω
2 to 18 pF
VDS= 9 V, GS= 3.3 mS, GL= 1 mS, f = 800 MHz.
L1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, L = approx. 200 nH.
V
AGC
1 nF
47 kΩ
1 nF
G2
BF1109
L1
0.5 to 3.5 pF
G1
BF1109R
BF1109WR
D
S
Fig.17 Gain test circuit.
1997 Dec 08 8
L2
0.5 to 3.5 pF
V
DS
1 nF
L3
1 nF
4 to 40 pF
output
50 Ω
MDA625
Page 9
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
handbook, full pagewidth
R
gen
50 Ω
V
i
50 Ω
4.7 nF
10 nF
V
G2
G2
G1
10 kΩ
BF1109WR
BF1109
BF1109R
V
DS
4.7 nF
47 µH
10 nF
D
S
R1 =
50 Ω
MDA626
Fig.18 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS= 9 V; V
S
f
(MHz)
MAGNITUDE
(ratio)
11
ANGLE
(deg)
MAGNITUDE
(ratio)
= 4 V; ID=12mA
G2-S
S
21
ANGLE
(deg)
S
MAGNITUDE
(ratio)
12
ANGLE
(deg)
S
MAGNITUDE
(ratio)
22
ANGLE
(deg)
50 0.995 −3.71 3.013 175.0 0.000 88.2 0.998 −1.8
100 0.992 −7.29 3.002 170.2 0.001 83.7 0.997 −3.5
200 0.984 −14.3 2.967 160.7 0.002 86.2 0.995 −7.0
300 0.973 −21.2 2.922 151.3 0.002 83.2 0.992 −10.5
400 0.961 −27.9 2.869 142.0 0.003 84.1 0.990 −13.9
500 0.944 −34.4 2.793 132.9 0.003 85.7 0.987 −17.2
600 0.926 −40.8 2.730 124.1 0.003 88.4 0.985 −20.5
700 0.906 −46.9 2.660 1115.3 0.003 94.6 0.983 −23.7
800 0.887 −52.9 2.605 106.5 0.004 107.2 0.981 −26.8
900 0.868 −58.8 2.527 97.8 0.004 114.9 0.977 −30.0
1000 0.852 −64.3 2.457 89.6 0.004 129.7 0.9377 −33.1
Table 2 Noise data: V
f
(MHz)
DS
= 9 V; V
= 4 V; ID=12mA
G2-S
F
min
(dB)
800 1.5 0.684 40.94 40.4
1997 Dec 08 9
Γ
opt
(ratio) (deg)
R
(Ω)
n
Page 10
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads SOT143B
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
34
Q
A
A
1
21
L
b
1
e
1
detail X
p
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
VERSION
1.1
0.9
OUTLINE
SOT143B
1
A
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
e
1.9
1997 Dec 08 10
e
1.7
H
L
E
1
2.5
2.1
0.45
0.15
p
0.55
0.45
EUROPEAN
PROJECTION
ywvQ
0.1 0.10.2
ISSUE DATE
97-02-28
Page 11
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
Plastic surface mounted package; reverse pinning; 4 leads SOT143R
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
43
Q
A
A
1
c
12
L
b
1
e
1
detail X
p
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
VERSION
1.1
0.9
OUTLINE
SOT143R
1
A
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
e
1.9
1997 Dec 08 11
e
1.7
H
L
E
1
2.5
2.1
0.55
0.25
p
0.45
0.25
EUROPEAN
PROJECTION
ywvQ
0.1 0.10.2
ISSUE DATE
97-03-10
Page 12
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
Plastic surface mounted package; reverse pinning; 4 leads SOT343R
w M
D
y
e
43
21
b
B
p
e
b
1
1
E
H
E
A
A
1
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
OUTLINE
VERSION
SOT343R
A
1.1
0.8
max
0.1
1
b
p
0.4
0.3
IEC JEDEC EIAJ
b
1
0.7
0.5
cD
0.25
2.2
0.10
1.8
REFERENCES
E
1.35
1.15
e
1.3
1997 Dec 08 12
H
L
e
E
1
2.2
0.45
2.0
0.15
Qwv
p
0.23
0.13
0.2y0.10.21.15
EUROPEAN
PROJECTION
ISSUE DATE
97-05-21
Page 13
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Dec 08 13
Page 14
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
NOTES
1997 Dec 08 14
Page 15
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR
NOTES
1997 Dec 08 15
Page 16
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 117067/00/02/pp16 Date of release: 1997 Dec 08 Document order number: 9397 750 02954
Loading...