Datasheet 74AVC16373 Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
74AVC16373
16-bit D-type transparent latch;
Product Specification Supersedes data of 1998 Dec 11 File under Integrated Circuits, IC24
2000 Mar 09
Page 2
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
FEATURES
Wide supply voltage range from 1.2 to 3.6 V
Complies with JEDEC standard no. 8-1A/5/7
CMOS low power consumption
Input/output tolerant up to 3.6 V
Dynamic Controlled Output (DCO) circuit dynamically
changes output impedance,resulting in noise reduction without speed degradation
Low inductance multiple VCCand GND pins to minimize noise and ground bounce
Supports Live Insertion.
DESCRIPTION
The 74AVC16373 is a 16-bit D-type transparent latch featuring separate D-type inputs for each latch, and 3-state outputs for bus oriented applications. One Latch Enable (LE) input and one Output Enable (OE) input are provided per 8-bit section. The 74AVC16373 consist of two sections of eight D-type transparent latches with 3-state true outputs.
The 74AVC16373 is designed to have an extremely fast propagation delay and a minimum amount of power consumption.
To ensure the high-impedance output state during power-up or power-down, pin OEn should be tied to V through a pull-up resistor (Live Insertion).
A Dynamic Controlled Output (DCO) circuitry is implemented to support termination line drive during transient (see Figs 1 and 2).
74AVC16373
CC
handbook, halfpage
0
I
OH
(mA)
1.8 V
100
2.5 V
200
3.3 V
300 012 4
Fig.1 Output voltage as a function of the
HIGH-level output current.
3
VOH (V)
MNA506
300
handbook, halfpage
I
OL
(mA)
200
100
0
012 4
1.8 V
3.3 V
2.5 V
Fig.2 Output voltage as a function of the
LOW-level output current.
3
MNA507
VOL (V)
2000 Mar 09 2
Page 3
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
QUICK REFERENCE DATA
GND = 0 V; T
t
PHL/tPLH
C
I
C
PD
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V fi= input frequency in MHz; fo= output frequency in MHz; CL= output load capacitance in pF; VCC= supply voltage in Volts; (CV
2. The condition is VI= GND to VCC.
=25°C; tr=tf≤2.0 ns.
amb
SYMBOL PARAMETER CONDITIONS TYP. UNIT
propagation delay nDnto nQ
n
input capacitance 5.0 pF power dissipation
capacitance per buffer
2
× fi+ (CL× V
CC
2
× fo) = sum of outputs.
CC
2
× fo) where:
CC
74AVC16373
VCC= 1.2 V 3.6 ns V
= 1.5 V 3.1 ns
CC
V
= 1.8 V 2.2 ns
CC
= 2.5 V 1.6 ns
V
CC
V
= 3.3 V 1.4 ns
CC
notes 1 and 2
outputs enabled 34 pF outputs disabled 1 pF
FUNCTION TABLE
See note 1.
OPERATING MODES
n
Enable and read register (transparent mode)
Latch and read register (hold mode)
Latch register and disable outputs H
INPUTS
OE LE nA
L L
L L
H H
L L
L
H
L
n
L
H
l
h
l
h
INTERNAL
LATCHES
Note
1. H = HIGH voltage level; h = HIGH voltage level one set-up time prior to the HIGH-to-LOW LE transition; L = LOW voltage level; l = LOW voltage level one set-up time prior to the HIGH-to-LOW LE transition; Z = high impedance OFF-state.
OUTPUTS
nY
n
L
H
L
H
L
H
L
H
L
H Z
Z
2000 Mar 09 3
Page 4
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant;
74AVC16373
3-state
ORDERING AND PACKAGE INFORMATION
to 1Q
to 2Q
to 2D to 1D
PACKAGE
data outputs
7
DC supply voltage data outputs
7
data inputs
0
data inputs
0
TYPE NUMBER
TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE
74AVC16373DGG 40 to +85 °C 48 TSSOP plastic SOT362-1
PINNING
PIN SYMBOL DESCRIPTION
11 2, 3, 5, 6, 8, 9, 11 and 12 1Q
OE output enable input (active LOW)
0
4, 10, 15, 21, 28, 34, 39 and 45 GND ground (0 V) 7, 18, 31 and 42 V 13, 14, 16, 17, 19, 20, 22 and 23 2Q 24 2
CC
0
OE output enable input (active LOW) 25 2LE latch enable input (active HIGH) 26, 27, 29, 30, 32, 33, 35 and 36 2D 37, 38, 40, 41, 43, 44, 46 and 47 1D
7 7
48 1LE latch enable input (active HIGH)
2000 Mar 09 4
Page 5
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
handbook, halfpage
1OE
1Q 1Q
GND
1Q 1Q
V
CC
1Q 1Q
GND
1Q 1Q 2Q 2Q
GND
2Q 2Q
V
CC
2Q 2Q
GND
2Q 2Q
2OE
1 2
0
3
1
4 5
2
6
3
7 8
4
9
5
10 11
6
12
7 0 1
2 3
4 5
6 7
16373
13 14 15 16 17 18 19 20 21 22 23 24
MNA541
1LE
48
1D
47
0
1D
46
1
GND
45
1D
44
2
1D
43
3
V
42
CC
1D
41
4
1D
40
5
GND
39
1D
38
6
1D
37
7
2D
36
0
2D
35
1
GND
34
2D
33
2
2D
32
3
V
31
CC
2D
30
4
2D
29
5
GND
28
2D
27
6
2D
26
7
2LE
25
handbook, halfpage
74AVC16373
1
24
1OE
2OE
47
1D
0
46
1D
1
1D
44 43 41 40 38 37 36 35 33 32 30 29 27 26
2
1D
3
1D
4
1D
5
1D
6
1D
7
2D
0
2D
1
2D
2
2D
3
2D
4
2D
5
2D
6
2D
7 1LE 2LE
48 25
1Q 1Q 1Q 1Q 1Q 1Q 1Q 1Q 2Q 2Q 2Q 2Q 2Q 2Q 2Q 2Q
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
MNA547
2 3 5 6 8
9 11 12 13 14 16 17 19
20
22
23
Fig.3 Pin configuration.
2000 Mar 09 5
Fig.4 Logic symbol.
Page 6
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
handbook, halfpage
1OE
1LE
2OE
2LE
1D 1D 1D 1D 1D 1D 1D 1D 2D 2D 2D 2D 2D 2D 2D 2D
1
1EN
48
C3
24
2EN
25
C4
47 46 44 43 41 40 38 37 36 35 33 32 30 29 27 26
3D 1
4D 2
MNA546
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
2
1Q
0
3
1Q
1
5
1Q
2
6
1Q
3
8
1Q
4
9
1Q
5
11
1Q
6
12
1Q
7
13
2Q
0
14
2Q
1
16
2Q
2
17
2Q
3
19
2Q
4
20
2Q
5
22
2Q
6
23
2Q
7
74AVC16373
Fig.5 IEEE/IEC logic symbol.
handbook, full pagewidth
1D
1LE
1OE
MNA545
D1Q
0
Q
LATCH
1
LE
to 7 other channels
0
2D
2LE
2OE
0
D2Q
Q
LATCH
9
LE
to 7 other channels
0
Fig.6 Logic diagram.
2000 Mar 09 6
Page 7
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant;
74AVC16373
3-state
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V V
T t
r,tf
CC
I O
amb
DC supply voltage according to JEDEC Low Voltage
Standards
for low-voltage applications 1.2 3.6 V DC input voltage 0 3.6 V DC output voltage output 3-state 0 3.6 V
output HIGH or LOW state 0 V operating ambient temperature in free air 40 +85 °C input rise and fall time ratios VCC= 1.4 to 1.6 V 0 40 ns/V
V
= 1.65 to 2.3 V 0 30 ns/V
CC
V
= 2.3 to 3.0 V 0 20 ns/V
CC
V
= 3.0 to 3.6 V 0 10 ns/V
CC
1.4 1.6 V
1.65 1.95 V
2.3 2.7 V
3.0 3.6 V
CC
V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
I
IK
V
I
I
OK
V
O
DC supply voltage 0.5 +4.6 V DC input diode current VI<0 −−50 mA DC input voltage for inputs; note 1 0.5 +4.6 V DC output clamping diode current VO<0 −−50 mA DC output voltage output HIGH or LOW state; note 1 0.5 VCC+ 0.5 V
output 3-state; note 1 0.5 +4.6 V
I
O
I
CC,IGND
T
stg
P
D
DC output sink current VO= 0 to V
CC
50 mA DC VCCor GND current −±100 mA storage temperature 65 +150 °C power dissipation per package for temperature range:
500 mW
40 to +85 °C; note 2
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 60 °C the value of PD derates linearly with 5.5 mW/K.
2000 Mar 09 7
Page 8
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
DC CHARACTERISTICS
Over recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
V
IH
HIGH-level input voltage
V
IL
LOW-level input voltage
V
OH
HIGH-level output voltage
V
OL
LOW-level output voltage
I
I
input leakage current per pin
I
off
power-off leakage current
I
IHZ/IILZ
input current for common I/O pins
I
OZ
3-state output OFFstate current
I
CC
quiescent supply current
TEST CONDITIONS T
OTHER VCC(V) MIN. TYP.
1.2 V
CC
1.4 to 1.6 0.65 × V
1.65 to 1.95 0.65 × V
2.3 to 2.7 1.7 1.2 V
3.0 to 3.6 2.0 1.5 V
1.2 −−GND V
1.4 to 1.6 0.9 0.35 × V
1.65 to 1.95 0.9 0.35 × V
2.3 to 2.7 1.2 0.7 V
3.0 to 3.6 1.5 0.8 V
VI=VIHor V
IL
IO= 100 µA 1.65 to 3.6 VCC− 0.20 V I
= 3 mA 1.4 VCC− 0.35 VCC− 0.23 V
O
= 4 mA 1.65 VCC− 0.45 VCC− 0.25 V
I
O
I
= 8 mA 2.3 VCC− 0.55 VCC− 0.38 V
O
I
= 12 mA 3.0 VCC− 0.70 VCC− 0.48 V
O
VI=VIHor V
IL
IO= 100 µA 1.65 to 3.6 GND 0.20 V I
=3mA 1.4 0.18 0.35 V
O
= 4 mA 1.65 0.22 0.45 V
I
O
I
=8mA 2.3 0.37 0.55 V
O
I
=2mA 3.0 0.51 0.70 V
O
VI=VCCor GND 1.4 to 3.6 0.1 2.5 µA
VIor VO= 3.6 V 0 0.1 ±10 µA
VI=VCCor GND 1.4 to 3.6 0.1 12.5 µA
VI=VIHor VIL; VO=VCC or GND
VI=VCCor GND; IO=0
1.4 to 2.7 0.1 5 µA
3.0 to 3.6 0.1 10 µA
1.4 to 2.7 0.1 20 µA
3.0 to 3.6 0.2 40 µA
= 40 to +85 °C
amb
−−V
0.9 V
CC
0.9 V
CC
CC
74AVC16373
(1)
MAX.
V
CC CC
UNIT
V V
Note
1. All typical values are measured at T
amb
=25°C.
2000 Mar 09 8
Page 9
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
AC CHARACTERISTICS
GND = 0 V; tr=tf≤2.0 ns.
SYMBOL PARAMETER
t
PHL/tPLH
propagation delay nDnto nQ
propagation delay nLE to nQ
t
PZH/tPZL
t
PHZ/tPLZ
t
W
t
su
t
h
3-state output enable time nOE to nQ
n
3-state output disable time nOE to nQ
n
nLE pulse width HIGH see Figs 8 and 11 1.2 2.4 ns
set-up time nDnto nLE see Figs 10 and 11 1.2 0.4 ns
hold time nDnto nLE see Figs 10 and 11 1.2 −−0.2 ns
see Figs 7 and 11 1.2 3.6 ns
n
see Figs 8 and 11 1.2 3.6 ns
n
see Figs 9 and 11 1.2 5.9 ns
see Figs 9 and 11 1.2 5.8 ns
TEST CONDITIONS T
WAVEFORMS V
74AVC16373
= 40 to +85 °C
amb
(V) MIN. TYP.
CC
1.40 to 1.60 1.2 3.1 6.8 ns
1.65 to 1.95 1.0 2.2 5.7 ns
2.3 to 2.7 0.7 1.6 3.3 ns
3.0 to 3.6 0.7 1.4 2.8 ns
1.40 to 1.60 2.5 3.1 9.4 ns
1.65 to 1.95 2.3 2.2 7.8 ns
2.3 to 2.7 1.3 1.6 4.2 ns
3.0 to 3.6 0.7 1.4 3.9 ns
1.40 to 1.60 1.6 4.2 8.8 ns
1.65 to 1.95 1.6 3.5 6.7 ns
2.3 to 2.7 1.4 2.4 4.3 ns
3.0 to 3.6 0.7 2.0 3.4 ns
1.40 to 1.60 2.5 4.6 9.4 ns
1.65 to 1.95 2.3 3.6 7.8 ns
2.3 to 2.7 1.3 1.9 4.2 ns
3.0 to 3.6 1.2 2.1 3.9 ns
1.40 to 1.60 1.9 ns
1.65 to 1.95 2.2 1.7 ns
2.3 to 2.7 2.0 1.6 ns
3.0 to 3.6 1.8 1.4 ns
1.40 to 1.60 1.2 0.2 ns
1.65 to 1.95 1.1 0.1 ns
2.3 to 2.7 +0.9 0.1 ns
3.0 to 3.6 +0.8 0.1 ns
1.40 to 1.60 +1.1 0.1 ns
1.65 to 1.95 1.1 0.0 ns
2.3 to 2.7 1.1 0.1 ns
3.0 to 3.6 1.0 0.2 ns
(1)
MAX.
UNIT
Note
1. All typical values are measured at T
=25°C and at VCC respectively 1.2, 1.5, 1.8, 2.5 and 3.3 V.
amb
2000 Mar 09 9
Page 10
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
AC WAVEFORMS
GND
V
OH
V
OL
V
V V
V
CC CC
I
V
M
t
PHL
V
M
I
handbook, full pagewidth
V
CC
2.3 to 2.7 V 0.5 × V
3.0 to 3.6 V 0.5 × V
V
nDn input
nQn output
M
CC CC
t
PLH
MNA544
74AVC16373
VOLand VOH are typical output voltage drop that occur with the output load.
Fig.7 The input (nDn) to output (nQn) propagation delay.
GND
V
OH
V
OL
V
I
V
M
t
W
t
PHL
V
I
V
CC
V
CC
handbook, full pagewidth
V
CC
2.3 to 2.7 V 0.5 × V
3.0 to 3.6 V 0.5 × V
nLE input
nQn output
V
M
CC CC
V
M
t
PLH
V
M
MNA543
VOLand VOH are typical output voltage drop that occur with the output load.
Fig.8 The latch enable input (nLE) pulse width to output (nQn) propagation delays.
2000 Mar 09 10
Page 11
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
handbook, full pagewidth
V
CC
2.3 to 2.7 V 0.5 × V
3.0 to 3.6 V 0.5 × V
nOE input
output LOW-to-OFF OFF-to-LOW
output HIGH-to-OFF OFF-to-HIGH
V
M
CC CC
V
I
V
M
GND
t
PLZ
V
CC
V
V
OL
V
OH
GND
t
PHZ
outputs
enabled
V
X
X
V
Y
V
Y
VOL+ 0.15 V VOH− 0.15 V V VOL+ 0.3 V VOH− 0.3 V V
outputs
disabled
V
CC CC
I
t
PZL
t
PZH
74AVC16373
V
M
V
M
outputs enabled
MNA478
VOLand VOH are typical output voltage drop that occur with the output load.
Fig.9 3-state enable and disable times.
V
GND
GND
I
V
M
t
V
I
V
V V
su
I
CC CC
handbook, full pagewidth
V
CC
2.3 to 2.7 V 0.5 × V
3.0 to 3.6 V 0.5 × V
nDn input
nLE input
V
M
CC CC
t
h
V
M
t
t
h
su
MNA542
The shaded areas indicate when the input is permitted to change for predictable output performance.
Fig.10 Data set-up and hold times for nDninput to nLE input.
2000 Mar 09 11
Page 12
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
handbook, full pagewidth
V
CC
TEST S1
t
PLH/tPHL
t
PLZ/tPZL
t
PHZ/tPZH
open 2 × V GND
CC
PULSE
GENERATOR
VCC (V) V
1.2 V
1.4 to 1.6 V
1.65 to 1.95 V
2.3 to 2.7 V
3.0 to 3.6 V
V
I
D.U.T.
R
T
I
2000 15 pF
CC
2000 15 pF
CC
1000 30 pF
CC
500 30 pF
CC
500 30 pF
CC
V
O
R
load
C
74AVC16373
S1
2 × V
CC
open
R
load
C
L
R
L
load
GND
MNA505
Fig.11 Load circuitry for switching times.
2000 Mar 09 12
Page 13
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
PACKAGE OUTLINE
TSSOP48: plastic thin shrink small outline package; 48 leads; body width 6.1 mm
D
c
y
Z
48 25
H
74AVC16373
SOT362-1
E
E
A
X
v M
A
A
2
A
1
pin 1 index
L
p
L
0.50
0.35
detail X
0.08
124
w M
b
e
DIMENSIONS (mm are the original dimensions).
mm
A
max.
1.2
0.15
0.05
1
A2A
1.05
0.85
0.25
b
0.28
0.17
p
cD
0.2
0.2
0.1
0.1
3
UNIT A
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
p
0
(1)E(2)
12.6
12.4
2.5
scale
eHELLpQZywvθ
6.2
0.5 1 0.25
6.0
8.3
7.9
5 mm
0.8
0.4
Q
(A )
3
A
θ
0.1
0.8
0.4
o
8
o
0
OUTLINE VERSION
SOT362-1
IEC JEDEC EIAJ
REFERENCES
MO-153
2000 Mar 09 13
EUROPEAN
PROJECTION
ISSUE DATE
95-02-10 99-12-27
Page 14
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant; 3-state
SOLDERING Introduction to soldering surface mount packages
Thistext gives a very briefinsightto a complex technology. A more in-depth account of soldering ICs can be found in our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011). There is no soldering method that is ideal for all surface
mount IC packages.Wave soldering isnot always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied tothe printed-circuit boardbyscreen printing, stencilling or pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating,soldering and cooling) vary between 100 and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 230 °C.
Wave soldering
Conventional single wave soldering is not recommended forsurfacemount devices (SMDs) orprinted-circuitboards with a high component density, as solder bridging and non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically developed.
If wave soldering is used the following conditions must be observed for optimal results:
Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave.
For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint
– smaller than 1.27 mm, the footprint longitudinal axis
The footprint must incorporate solder thieves at the downstream end.
Forpackageswith leads on foursides,thefootprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners.
During placement andbefore soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
74AVC16373
longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board;
must be parallel to the transport direction of the printed-circuit board.
2000 Mar 09 14
Page 15
Philips Semiconductors Product Specification
16-bit D-type transparent latch; 3.6 V tolerant;
74AVC16373
3-state
Suitability of surface mount IC packages for wave and reflow soldering methods
PACKAGE
BGA, LFBGA, SQFP, TFBGA not suitable suitable HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable
(3)
PLCC LQFP, QFP, TQFP not recommended SSOP, TSSOP, VSO not recommended
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
5. Wave soldering is only suitable for SSOP and TSSOP packageswith a pitch (e) equal to or larger than 0.65 mm; it is
, SO, SOJ suitable suitable
temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
The package footprint must incorporate solder thieves downstream and at the side corners.
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
SOLDERING METHOD
WAVE REFLOW
(2)
(3)(4) (5)
suitable
suitable suitable
(1)
.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting valuesgiven are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
2000 Mar 09 15
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Philips Semiconductors – a w orldwide compan y
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
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Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
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Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
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Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation,Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052MONZA(MI), Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398
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Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
2000
Internet: http://www.semiconductors.philips.com
69
Printed in The Netherlands 613507/02/pp16 Date of release: 2000 Mar 09 Document order number: 9397750 06897
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