Page 1
74AC04
HEX INVERTER
■ HIGH SPEED: t
■ LOWPOWERDISSIPATION:
=4µA (MAX.)at TA=25oC
I
CC
■ HIGH NOISE IMMUNITY:
V
NIH=VNIL
■ 50Ω TRANSMISSION LINE DRIVING
=4 ns (TYP.)atVCC=5V
PD
=28%VCC(MIN.)
CAPABILITY
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=24mA(MIN)
OH
■ BALANCE DPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERAN GE:
V
(OPR) = 2V to 6V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
74SERIES04
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The AC04 is an advanced high-speed CMOS
HEX INVERTER fabricated with sub-micron
silicon gate and double-layermetal wiring C
2
MOS
B
(Plastic Package)
(Micro Package)
M
ORDERCODES:
74AC04B 74AC04M
technology. It is ideal for low power applications
mantaining high speed operation similar to
equivalentBipolarSchottky TTL.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunityand stable output.
All inputs and outputs are equipped with
protectioncircuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PINCONNECTION AND IEC LOGIC SYMBOLS
April 1997
1/7
Page 2
74AC04
INPUTAND OUTPUTEQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM B O L NAME AN D FUNC T I ON
1, 3, 5, 9,
1A to 6A Data Inputs
11, 13
2, 4, 6, 8,
1Y to 6Y Data Oututs
10, 12
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTHTABLE
AY
LH
HL
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
Supply Voltage -0.5 to +7 V
CC
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 300 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Parame t er Value Un i t
V
V
V
T
dt/dv Input Rise and Fall Time V
1) VINfrom30%to 70%of V
2/7
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: -40 to +85
op
= 3.0, 4.5 or 5.5 V(note 1) 8 ns/V
CC
CC
CC
CC
V
V
o
C
Page 3
DC SPECIFICATIONS
74AC04
Symbol Parameter Test Condit ions Value Unit
V
CC
(V)
High Level Input Voltage 3.0 VO= 0.1 V or
V
IH
4.5 3.15 2.25 3.15
V
CC
- 0.1 V
T
=25oC-40to85
A
Min. Ty p. Ma x. Min. Max.
2.1 1.5 2.1
o
C
5.5 3.85 2.75 3.85
Low Level Input Voltage 3.0 VO= 0.1 V or
V
IL
4.5 2.25 1.35 1.35
V
CC
- 0.1 V
1.5 0.9 0.9
5.5 2.75 1.65 1.65
High Level Output
V
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current
I
I
Quiescent Supply
I
CC
3.0
4.5 I
5.5 I
V
V
3.0 I
4.5 I
5.5 I
3.0
4.5 I
5.5 I
V
V
3.0 I
4.5 I
5.5 I
5.5
IO=-50 µA 2.9 2.99 2.9
(*)
I
IH
V
IL
=-50 µA 4.4 4.49 4.4
O
=
=-50 µA 5.4 5.49 5.4
or
O
=-12 mA 2.56 2.46
O
=-24 mA 3.86 3.76
O
=-24 mA 4.86 4.76
O
IO=50 µA 0.002 0.1 0.1
(*)
I
IH
V
IL
=50 µA 0.001 0.1 0.1
O
=
=50 µA 0.001 0.1 0.1
or
O
=12 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
VI=VCCor GND ±0.1 ±1 µA
5.5 VI=VCCor GND 4 40 µA
Current
Dynamic Output Current
I
OLD
OHD
(note 1, 2)
I
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω.
(*)All outputs loaded.
5.5 V
= 1.65 V max 75 mA
OLD
V
= 3.85 V min -75 mA
OHD
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Inputtr=tf=3ns)
Symbol Parameter Test Cond itio n Value Unit
t
Propagation Delay Time 3.3
PLH
t
PHL
(*) Voltagerange is3.3V± 0.3V
(**) Voltagerangeis5V± 0.5V
V
5.0
CC
(V)
(*)
(**)
T
=25oC-40to85
A
Min. Ty p. Ma x. Min. Max.
1.5 5.0 9.0 1.0 10.0
1.5 4.0 7.0 1.0 8.0
o
C
ns
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Condit ions Value Unit
=25oC-40to85
T
A
Min. Ty p. Ma x. Min. Max.
4
Input Capacitance
C
IN
Power Dissipation
C
PD
V
CC
(V)
5.0
5.0 33 pF
Capacitance (note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. I
(opr) =CPD• VCC•fIN+ICC/n (percircuit)
CC
o
C
pF
3/7
Page 4
74AC04
TEST CIRCUIT
CL= 50 pF or equivalent (includes jig and probe capacitance)
= 500Ω or equivalent
R
L=R1
R
WAVEFORM: PROPAGATIONDELAYS (f=1MHz; 50% duty cycle)
of pulse generator (typically 50Ω)
T=ZOUT
4/7
Page 5
Plastic DIP14 MECHANICALDATA
74AC04
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
mm inch
P001A
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Page 6
74AC04
SO14 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45 (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S 8 (max.)
mm inch
6/7
P013G
Page 7
74AC04
Information furnished is believed to be accurateandreliable.However,SGS-THOMSON Microelectronicsassumesno responsability for the
consequencesof use ofsuch informationnor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseisgrantedby implicationor otherwise underany patentorpatent rightsofSGS-THOMSONMicroelectronics.Specificationsmentioned
in this publicationare subjecttochange withoutnotice.This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized for useas criticalcomponents in lifesupportdevicesor systemswithoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - All Rights Reserved
Australia- Brazil - Canada - China- France- Germany - Hong Kong- Italy- Japan- Korea- Malaysia- Malta - Morocco- TheNetherlands-
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