Datasheet 7206F Datasheet (Maxwell Technologies)

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7206F

High-Speed Epi-CMOS (16K x 9-Bit)

Parallel FIFO

I

7206F

FEATURES:

• 16K x 9-bit organization

•R

AD-PAK® radiation-hardened against natural space radia-

tion

• A total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effect

- SEL

: > 100 MeV/mg/cm

TH

- SEUTH: = 7 MeV/mg/cm

- SEU saturated cross section: 1.5E-5 cm2/bit

• Asynchronous Read/Write operation

• High speed CMOS epi technology

• Retransmit capability

• Propagation time (max access time):

- 15 ns, 20 ns, 30 ns, 40 ns, 50 ns

• Status flag: empty, half-full, full

• Fully expandable in both word depth and width

• Bi-directional applications

• Low power

• Battery back-up operation

• TTL compatible

• Package: 28 pin R

AD-PAK® flat package

2

2

Logic Diagram

DESCRIPTION:

Maxwell Technologies’ 7206F high speed FIFO microcircuit
features a greater than 100 krad (Si) total dose tolerance,
depending upon space mission. It is organized such that the
data is read in the same sequential order that it was written.
Full and Empty flags are provided to prevent overflow and
underflow. The expansion logic allows unlimited expansion
capability in work size and depth with no timing penalties. Twin
address pointers automatically generate internal read and
write addresses, and automatically increment with the write
and read pin. The 7206F 9-bits wide data are used in data
communications applications where a parity bit for error
checking is necessary. The retransmit capability allows the
read pointer to be reset to its initial position without affecting
the write pointer.

Maxwell Technologies' patented R
ogy incorporates radiation shielding in the microcircuit pack­age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.

AD-PAK® packaging technol-

AD-PAK provides greater than 100

Memory

1000572

[phone]- Fax: [phone]- www.maxwell.com

12.19.01 Rev 3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

TABLE 1. 7206F PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

1WWrite Enable

2 - 6 I8, I3-I0 Inputs

7XI

Expansion In

7206F

8

FF

Full Flag

9 - 13 Q0 - Q3, Q8 Outputs

14 GND Ground

15 R

Read Enable

16 - 19 Q4 - Q7 Outputs

20 XO

21 EF

22 RS

23 FL

/HF Expansion Out/Half Full Flag

Empty Flag

Reset

/RT First Load/Retransmit

24 - 27 I7 - I4 Inputs

28 V

CC

Power Supply

TABLE 2. 7206F ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNIT

Positive Supply Voltage V

Input or Output Voltage V

Storage Temperature Range T

Operating Temperature Range T

CC

IN

S

A

-0.3 7.0 V

GND -0.3 V

+0.3 V

CC

-65 150

-55 125

°

C

°

C

Memory

TABLE 3. 7206F RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNIT

Positive Supply Voltage V

High Level Input Voltage V

Low Level Voltage V

Thermal Impedance

Operating Temperature Range T

1000572

12.19.01 Rev 3

CC

IH

IL

Θ

JC

A

All data sheets are subject to change without notice

4.5 5.5 V

2.2 -- V

-- 0.8 V

-- 0.93 °C/W

-55 125

©2001 Maxwell Technologies

All rights reserved.

°

C

2

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

7206F

TABLE 4. 7206F DC ELECTRICAL CHARACTERISTICS

(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SYMBOL MIN MAX UNIT

Operating Supply Current

-15

-20

-30

-40

-50

Standby Supply Current (R

= W = RS = FLVRT = VIH)I

Power Down Current (All Input = V

Input Leakage Current (0.4V <

Output Leakage Current (R

Input Low Voltage

Input High Voltage

1

1

Output Low Voltage (V

Output High Voltage (V

+ 0.3V. V

CC

2

2

Input Capacitance

Output Capacitance

1. VIH max = V

VIN < VCC)I

= VIH, 0.4V < V

min, IOL = 8mA) V

CC

min, IOH = -2mA) V

CC

min = -0.3V or -1.0V pulse width 50 ns.

IL

2. Guaranteed by design.

I

CCOP

--

--

--

--

--

CCSB

)I

CC

< VCC)I

OUT

CCPD

V

V

C

C

LI

LO

IL

IH

OL

OH

IN

OUT

-- 5 mA

-- 400 µA

-- ±1 µA

-- ±1 µA

-- 0.8 V

2.2 -- V

-- 0.4 V

2.4 -- V

-- 10 pF

-- 10 pF

mA
165
160
150
140
130

Memory

TABLE 5. 7206F TIMING CHARACTERISTICS

1

(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SYMBOL MIN MAX UNITS

Read Cycle

Read Cycle Time

-15

-20

-30

-40

-50

Access Time

-15

-20

-30

-40

-50

1000572

12.19.01 Rev 3

t

RC

25
30
40
50
65

t

A

--

--

--

--

--

All data sheets are subject to change without notice

--

--

--

--

--

15
20
30
40
50

©2001 Maxwell Technologies

All rights reserved.

ns

ns

3

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

7206F

TABLE 5. 7206F TIMING CHARACTERISTICS

1

(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SYMBOL MIN MAX UNITS

t

t

t

t

t

RR

RPW

RLZ

WLZ

t

DV

RHZ

10
10
10
10
15

15
20
30
40
50

--

--

--

--

--

--

--

--

--

--

0
0
5
5
5

3
3
5
5
5

5
5
5
5
5

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

15
15
20
25
30

Read Recovery Time

-15

-20

-30

-40

-50

Read Pulse Width

2

-15

-20

-30

-40

-50

Read Low to Data Low-Z

3

-15

-20

-30

-40

-50

Write HIGH to Data Low-Z

3,4

-15

-20

-30

-40

-50

Data Valid from Read High

-15

-20

-30

-40

-50

Read High to Data Bus High-Z

-15

-20

-30

-40

-50

3

ns

ns

ns

Memory

ns

ns

ns

1000572

12.19.01 Rev 3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

4

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

7206F

TABLE 5. 7206F TIMING CHARACTERISTICS

1

(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SYMBOL MIN MAX UNITS

Write Cycle

Write Cycle Time

-15

-20

-30

-40

-50

Write Pulse Width

2

-15

-20

-30

-40

-50

Write Recovery Time

-15

-20

-30

-40

-50

Data Set-up Time

-15

-20

-30

-40

-50

Data Hold Time

-15

-20

-30

-40

-50

t

WC

t

WPW

t

WR

t

t

DS

DH

25
30
40
50
65

15
20
30
40
50

10
10
10
10
15

12
18
24
30

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

9

--

--

--

--

--

0
0
0
0
5

--

--

--

--

--

ns

ns

ns

Memory

ns

ns

Reset Cycle

Reset Cycle Time

-15

-20

-30

-40

-50

Reset Pulse Width

-15

-20

-30

-40

-50

1000572

t

RSC

25
30
40
50
65

2

t

RS

15
20
30
40
50

12.19.01 Rev 3

All data sheets are subject to change without notice

--

--

--

--

--

--

--

--

--

--

©2001 Maxwell Technologies

ns

ns

5

All rights reserved.

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

7206F

TABLE 5. 7206F TIMING CHARACTERISTICS

1

(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SYMBOL MIN MAX UNITS

Reset Set-up Time

3

-15

-20

-30

-40

-50

Reset Recovery Time

-15

-20

-30

-40

-50

t

RSS

t

RSR

20
30
30
50
60

10
10
10
10
15

--

--

--

--

--

--

--

--

--

--

Retransmit Cycle

Retransmit Cycle TIme

-15

-20

-30

-40

-50

Retransmit Pulse Width

-15

-20

-30

-40

-50

Retransmit Set-up Time

-15

-20

-30

-40

-50

2

3

t

t

RTC

t

RT

RTS

25
30
40
50
65

15
20
30
40
50

15
20
30
40
50

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

ns

ns

ns

Memory

ns

ns

Retransmit Recovery Time

-15

-20

-30

-40

-50

Flags

Reset to EF

Low

-15

-20

-30

-40

-50

1000572

12.19.01 Rev 3

t

RTR

10
10
10
10
15

t

EFL

--

--

--

--

--

All data sheets are subject to change without notice

--

--

--

--

--

25
30
30
50
65

©2001 Maxwell Technologies

All rights reserved.

ns

ns

6

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

7206F

TABLE 5. 7206F TIMING CHARACTERISTICS

1

(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SYMBOL MIN MAX UNITS

Reset to HF/FF High

-15

-20

-30

-40

-50

Read Low to EF

Low

-15

-20

-30

-40

-50

Read High to FF

High

-15

-20

-30

-40

-50

Read Pulse Width after EF

-15

-20

-30

-40

-50

Write High to EF

High

-15

-20

-30

-40

-50

Write Low to FF

Low

-15

-20

-30

-40

-50

Write Low to HF

Flag Low

-15

-20

-30

-40

-50

High

t

HFH

t

REF

t

t

RPE

t

WEF

t

WFF

t

WHF

, t

RFF

FFH

15
20
30
40
50

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

25
30
30
50
65

15
20
30
40
50

17
20
30
40
50

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

15
20
30
40
50

20
20
30
40
50

30
30
30
50
65

ns

ns

ns

Memory

ns

ns

ns

ns

1000572

12.19.01 Rev 3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

7

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

7206F

TABLE 5. 7206F TIMING CHARACTERISTICS

1

(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SYMBOL MIN MAX UNITS

Read High to HF Flag High

-15

-20

-30

-40

-50

Write Pulse Width after FF

-15

-20

-30

-40

-50

Read/Write LOW to XO

LOW

-15

-20

-30

-40

-50

Read/Write LOW to XO

HIGH

-15

-20

-30

-40

-50

XI

Pulse Width

-15

-20

-30

-40

-50

XI

Recovery Time

-15

-20

-30

-40

-50

XI

Set-up Time

-15

-20

-30

-40

-50

High

t

t

t

t

RHF

WPF

XOL

XOH

t

t

XIR

t

XIS

--

--

--

--

--

15
20
30
40
50

--

--

--

--

--

--

--

--

--

--

XI

15
20
30
40
50

10
10
10
10
10

10
10
10
15
15

30
30
30
50
65

--

--

--

--

--

15
20
30
40
50

15
20
30
40
50

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

ns

ns

ns

Memory

ns

ns

ns

ns

1. V

= +5V±10%, TA = +25 °C; use switching test circuit. AC tests are performed with input rise and fall times of 5 ns or less,

CC

timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and the output load circuit, unless otherwise specified.

1000572

12.19.01 Rev 3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

8

All rights reserved.

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

2. Pulse widths less than minimum value are not allowed.

3. Values guaranteed by design, not currently tested.

4. Only applies to read data flow-through mode.

FIGURE 1. RESET

7206F

Memory

FIGURE 2. ASYNCHRONOUS WRITE AND READ OPERATION

FIGURE 3. FULL FLAG TIMING FROM LAST WRITE TO FIRST READ

1000572

12.19.01 Rev 3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

9

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

FIGURE 4. EMPTY FLAG TIMING FROM LAST READ TO FIRST WRITE

FIGURE 5. RETRANSMIT

7206F

Memory

FIGURE 6. EMPTY FLAG TIMING

FIGURE 7. FULL FLAG TIMING

1000572

12.19.01 Rev 3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

10

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

FIGURE 8. HALF-FULL FLAG TIMING

FIGURE 9. EXPANSION OUT

FIGURE 10. EXPANSION IN

7206F

Memory

1000572

FIGURE 11. READ DATA FLOW FOR THROUGH MODE

12.19.01 Rev 3

All data sheets are subject to change without notice

11

©2001 Maxwell Technologies

All rights reserved.

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

FIGURE 12. WRITE DATA FLOW FOR THROUGH MODE

7206F

Memory

1000572

12.19.01 Rev 3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

12

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

7206F

Memory

28 PIN RAD-PAK® FLAT PACKAGE

SYMBOL DIMENSION

MIN NOM MAX

A 0.129 0.142 0.155

b 0.015 0.017 0.022

c 0.004 0.005 0.009

D -- 0.720 0.740

E 0.400 0.410 0.420

E1 -- -- 0.440

E2 0.180 0.250 --

E3 0.005 0.080 --

e 0.050 BSC

L 0.390 0.400 0.410

Q 0.021 0.033 0.045

S1 0.005 0.067 --

N28

F28-07

Note: All dimensions in inches

1000572

12.19.01 Rev 3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

13

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

Important Notice:

These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.

The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.

Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.

Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech­nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.

7206F

Memory

1000572

12.19.01 Rev 3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

14

High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO

)

Product Ordering Options

Model Number

7206F

7206F

RP

F X

-XX

Feature

Access Time

Screening Flow

Package

Option Details

15 = 15 ns
20 = 20 ns
30 = 30 ns
40 = 40 ns
50 = 50 ns

Monolithic
S = Maxwell Class S
B = Maxwell Class B
E = Engineering (testing @ +25°C
I = Industrial (testing @ -55°C,
+25°C, +125°C)

F = Flat Pack

Memory

1000572

Radiation Feature

Base Product
Nomenclature

12.19.01 Rev 3

RP = R

AD-PAK® package

High-Speed Epi-CMOS (16K x 9­Bit) Parallel FIFO

All data sheets are subject to change without notice

15

©2001 Maxwell Technologies

All rights reserved.