Datasheet 71HFR140M, 71HF40 Specification

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DO-5 (DO-203AB)

Standard Recovery Diodes,

PRIMARY CHARACTERISTICS

I

F(AV)

Package DO-5 (DO-203AB)

Circuit configuration Single

(Stud Version), 70 A

FEATURES

• High surge current capability

• Designed for a wide range of applications

• Stud cathode and stud anode version

• Leaded version available

• Types up to 1600 V V

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Converters

70 A

• Power supplies

• Machine tool controls

• Battery charges

VS-70HF(R) Series

Vishay Semiconductors

RRM

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

T

J

T

C

50 Hz 1200 1200

60 Hz 1250 1250

50 Hz 7100 7100

60 Hz 6450 6450

Range 100 to 1200 1400 to 1600 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM

V

RRM

TYPE
NUMBER

VS-70HF(R)

VOLTAGE

CODE

10 100 200 200

20 200 300 300

30 300 400 400

40 400 500 500

60 600 720 725

80 800 960 950

100 1000 1200 1150

120 1200 1440 1350

140 1400 1650 1550

160 1600 1900 1750

REPETITIVE PEAK

REVERSE VOLTAGE

V

70HF(R)

10 TO 120 140/160

70 70 A

140 110 °C

110 110 A

-65 to +180 -65 to +150 °C

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

V

, MINIMUM

R(BR)

AVALANCHE VOLTAGE

V

UNITS

I

MAXIMUM

RRM

AT T

= TJ MAXIMUM

J

A

A2s

mA

15

9

4.5

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current
at case temperature

Maximum RMS forward current I

Maximum peak, one cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 71 000 A2s

Low level value of threshold voltage V

High level value of threshold voltage V
Low level value of forward

slope resistance
High level value of forward

slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 1250

t = 10 ms

t = 8.3 ms 1050

t = 10 ms

t = 8.3 ms 6450

t = 10 ms

t = 8.3 ms 4550

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

(I >  x I

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 1.00

F(AV)

F(AV)

), TJ = TJ maximum 1.53

F(AV)

RRM

< I <  x I

< I <  x I

), TJ = TJ maximum 0.79

F(AV)

), TJ = TJ maximum 2.33

F(AV)

Ipk = 220 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.35 1.46 V

VS-70HF(R) Series

Vishay Semiconductors

70HF(R)

10 to 120 140/160

70 A

140 110 °C

110 A

1200

1000

= TJ maximum

J

7100

5000

UNITS

A

2

A

s

V

m

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction and
storage temperature range

Maximum thermal resistance,
junction to case

Thermal resistance, case to heatsink R

Maximum allowable mounting torque
(+0 %, -10 %)

, T

T

J

Stg

R

thJC

thCS

DC operation 0.45

Mounting surface, smooth, flat and greased 0.25

Not lubricated thread, tighting on nut

Lubricated thread, tighting on nut

Not lubricated thread, tighting on hexagon

Lubricated thread, tighting on hexagon

(1)

(1)

(2)

(2)

Approximate weight

Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB)

Notes

(1)

Recommended for pass-through holes

(2)

Recommended for holed threaded heatsinks

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.08 0.06

120° 0.10 0.11

90° 0.13 0.14

60° 0.19 0.20

30° 0.30 0.30

Note

• The table above shows the increment of thermal resistance R

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when devices operate at different conduction angles than DC

thJC

2

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70HF(R)

10 to 120 140/160

-65 to +180 -65 to +150 °C

3.4 (30)

2.3 (20)

4.2 (37)

3.2 (28)

17 g

0.6 oz.

T

= TJ maximum K/W

J

Document Number: 93521

UNITS

K/W

N · m

(lbf · in)

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VS-70HF(R) Series

Vishay Semiconductors

180

170

160

150

140

130

0 10 20 30 40 50 60 70 80

Maximum Allowable Case Temperature (°C)

Average Forward Current (A)

70HF(R) series (100 V to 1200 V)

(DC) = 0.45 K/W

R

thJC

Conduction angle

90°

60°

30°

120°

Fig. 1 - Current Ratings Characteristics

180

170

160

150

70HF(R) series (100 V to 1200 V)

(DC) = 0.45 K/W

R

thJC

Conduction period

180°

150

140

130

120

110

100

0 10 20 30 40 50 60 70 80

Maximum Allowable Case Temperature (°C)

Average Forward Current (A)

70HF(R) series (1400 V to 1600 V)
R

(DC) = 0.45 K/W

thJC

Conduction angle

90°

60°

30°

120°

Fig. 3 - Current Ratings Characteristics

150

140

130

120

70HF(R) series (1400 V to 1600 V)

(DC) = 0.45 K/W

R

thJC

Conduction period

180°

140

30°

60°

90°

120°

180°

130

120

0 20 40 60 80 100 120

Maximum Allowable Case Temperature (°C)

Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

90

80

70

60

50

40

30

20

10

0

0 10 20 30 40 50 60 70 80

Maximum Average Forward Power Loss (W)

Average Forward Current (A)

180°
120°

90°
60°
30°

RMS limit

DC

70HF(R) series
(100 V to 1200 V)
T = 180 °C

Conduction angle

J

110

30°

60°

90°

120°

180°

100

90

0 20 40 60 80 100 120

Maximum Allowable Case Temperature (°C)

Average Forward Current (A)

Fig. 4 - Current Ratings Characteristics

0.7 K/W

0.5 K/W

1 K/W

1.

5 K/W

2 K/W

3 K/W

4 K/W

5 K/W

0 20 40 60 80 100 120 140 160 180

R

thSA

= 0.3 K/W - ΔR

Maximum Allowable Ambient Temperature (°C)

DC

Fig. 5 - Forward Power Loss Characteristics

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Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

0 20 40 60 80 100 120 140 160 180

0

20

40

60

80

100

120

0 20 40 60 80 100 120

DC
180°
120°

90°

60°

30°

RMS limit

Conduction period

70HF(R) series
(100 V to 1200 V)
T = 180 °C

J

R

thSA

= 0.3 K/W - ΔR

0.5 K/W

0.7 K/W

1 K/W

3 K/W

1.5 K/
W

2 K/W

5 K/W

Maximum Average Forward Power Loss (W)

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Maximum Average Forward Power Loss (W)

0 25 50 75 100 125 150

0

10

20

30

40

50

60

70

80

90

0 10 20 30 40 50 60 70 80

RMS limit

Conduction angle

180°
120°

90°
60°
30°

70HF(R) series
(1400 V to 1600 V)
T = 150 °C

J

R

thSA

= 0.3 K/W - ΔR

0.5 K/W

0.7 K/W

1 K/W

3 K/W

4 K/W

1.5 K/
W

2

K/W

5 K/W

VS-70HF(R) Series

Vishay Semiconductors

Fig. 6 - Forward Power Loss Characteristics

Revision: 11-Jan-18

Fig. 7 - Forward Power Loss Characteristics

120

100

80

60

RMS limit

40

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0

0 20 40 60 80 100 120

Maximum Average Forward Power Loss (W)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DC
180°
120°

90°
60°
30°

Conduction period

70HF(R) series
(1400 V to 1600 V)
T = 150 °C

J

Average Forward Current (A)

Fig. 8 - Forward Power Loss Characteristics

1

1.5 K/W

5

K/W

0 25 50 75 100 125 150

Maximum Allowable Ambient Temperature (°C)

4

R

0.5 K/W

0.7 K/W

K/W

2 K/W

3 K/W

t

h

S

A

= 0.3 K/W - Δ

R

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1

10

100

1000

0 0.5 1 1.5 2 2.5 3

TJ = 25 °C

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

TJ = TJ max.

70HF(R) series

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

1

10

100

1000

0 0.5 1 1.5 2 2.5 3 3.5 4

TJ = 25 °C

TJ = TJ max.

70HF (R) series

(140 to 160)

1100

At any rated load condition and with rated V
applied following surge.

1000

900

800

700

600

500

400

300

Peak Half Sine Wave Forward Current (A)

70HF(R) series

1 10 100

Number Of Equal Amplitude
Half Cycle Current Pulses (N)

Fig. 9 - Maximum Non-Repetitive Surge Current

Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

= TJ max.

J

RRM

VS-70HF(R) Series

Vishay Semiconductors

Fig. 11 - Forward Voltage Drop Characteristics

1200

1100

1000

900

800

700

600

500

400

300

200

0.01 0.1 1

Peak Half Sine Wave Forward Current (A)

Maximum non repetitive surge current
vs. pulse train duration.

70HF(R) series

Initial TJ = TJ max.
No voltage reapplied
Rated V

Pulse Train Duration (s)

Fig. 10 - Maximum Non-Repetitive Surge Current

reapplied

RRM

10

Steady state value

= 0.45 K/W

R

thJC

(DC operation)

1

0.1

0.01

70HF(R) series

0.001

- Transient Thermal Impedance (K/W)

0.0001 0.001 0.01 0.1 1 10

thJC

Z

Fig. 12 - Thermal Impedance Z

Square Wave Pulse Duration (s)

thJC

Characteristics

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Fig. 13 - Forward Voltage Drop Characteristics

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Device code

5 61 32 4

70VS- HF R 160 M

2

1

5

- Voltage code x 10 = V

RRM

(see Voltage Ratings table)

- HF = standard diode

- Vishay Semiconductors product

4

3

-

None = stud normal polarity (cathode to stud)

R = stud reverse polarity (anode to stud)

None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A

M = stud base DO-5 (DO-203AB) M6 x 1

6

-

- 70 = standard device

71 = not isolated lead

72 = isolated lead with silicone sleeve

(red = reverse polarity)

(blue = normal polarity)

ORDERING INFORMATION TABLE

VS-70HF(R) Series

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95343

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Document Number: 93521

DO-203AB (DO-5) for 70HF(R) and 71HF(R) Series

DIMENSIONS FOR 70HF(R) SERIES in millimeters (inches)

Ø 14.6 (0.57)

6.1/7

(0.24/0.27)

4 (0.16)

4 (0.16) MIN.

25.4 (1) MAX.

10.8 (0.42)

11.4 (0.45)

Outline Dimensions

Vishay Semiconductors

11.1 ± 0.4

(0.44 ± 0.02)

1.20 (0.04)

1/4" 28UNF-2A

for metric devices: M6 x 1

17.40 (0.68)

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Outline Dimensions

12.2 (0.48) MAX.

Ø 7 (0.28) MAX.

134.4 (5.29)
MAX.

123 (4.84)

MAX.

Vishay Semiconductors

DO-203AB (DO-5) for 70HF(R)

and 71HF(R) Series

DIMENSIONS FOR 71HF(R) SERIES in millimeters (inches)

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