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General features
2STW4468
High power NPN epitaxial planar bipolar transistor
■ High breakdown voltage V
■ Complementary to 2STW1695
■ Fast-switching speed
■ Typical f
■ Fully characterized at 125
■ In compliance with the 2002/93/EC European
=20MHz
t
CEO
o
C
=140V
Directive
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.
3
2
1
TO-247
Internal schematic diagram
Order codes
Part Number Marking Package Packing
2STW4468 2STW4468 TO-247 Tube
February 2007 Rev 3 1/9
www.st.com
9
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2STW4468
Electrical ratings
Table 1. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
P
CBO
CEO
EBO
I
I
CM
TOT
T
T
Collector-emitter voltage (IE = 0)
Collector-emitter voltage (IB = 0)
200 V
140 V
Collector-base voltage (IC = 0) 6
Collector current 10 A
C
Collector peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature -65 to 150 °C
stg
Max. operating junction temperature 150 °C
J
20 A
100 W
Table 2. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case ______________ __max 1.25 °C/W
V
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2STW4468 Electrical characteristics
1 Electrical characteristics
(T
= 25°C; unless otherwise specified)
CASE
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
h
C
t
f
CBO
t
stg
t
Collector cut-off current
= 0)
(I
E
Emitter cut-off current
= 0)
(I
C
Collector-emitter breakdown
(1)
voltage (I
= 0)
B
Collector-emitter breakdown
voltage (I
Collector-emitter breakdown
(1)
voltage (I
Collector-emitter saturation
(1)
= 0)
E
= 0)
C
voltage
Base-emitter voltage
BE
DC current gain
FE
Transition frequency
T
Collector-base capacitance
Resistive Load
Turn-on time
on
Storage time
Fall time
off
= 200V
V
CB
= 6V
V
EB
= 50mA
I
C
= 100µA
I
C
I
= 1mA
E
I
= 5A IB = 500mA
C
= 7A IB = 700mA
I
C
= 5V IC = 5A
V
CE
= 3A V
I
C
I
= 5A V
C
= 0.5A V
I
C
I
= 0 V
I
I
E
C
B1
CB
= 5A V
= -I
= 0.5A
B2
CE
CE
CE
= 10V f = 1MHz
= 60V
CC
= 4V
= 4V
= 12V
0.1 µA
0.1 µA
140 V
200 V
6V
0.5
0.7
1.3 V
70
140
50
20 MHz
150 pF
0.22
4.3
0.5
V
V
µs
µs
µs
Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%
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Electrical characteristics 2STW4468
1.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Output characteristics
Figure 3. DC current gain Figure 4. Collector-emitter saturation
voltage
Figure 5. Base-emitter on voltage Figure 6. Collector current vs base-
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emitter voltage
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2STW4468 Electrical characteristics
1.2 Test circuit
Figure 7. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data 2STW4468
2 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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2STW4468 Package mechanical data
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
mm inch
P025P
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Revision history 2STW4468
3 Revision history
Table 4. Revision history
Date Revision Changes
23-Oct-2006 1 First release
09-Feb-2007 2 New graphics.
20-Feb-2007 3
New graphics The device’s commercial code has been changed from
preliminary to full.
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2STW4468
y
y
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