Datasheet 2STW1695 Specification

Page 1
Features
2STW1695
High power PNP epitaxial planar bipolar transistor
High breakdown voltage V
Typical f
Fully characterized at 125
= 20 MHz
t
CEO
o
C
= -140 V
Applications
Audio power amplifier
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage.
3
2
1
TO-247

Figure 1. Internal schematic diagram

Table 1. Device summary

Obsolete Product(s) - Obsolete Product(s)
October 2008 Rev 4 1/9
Order code Marking Package Packaging
2STW1695 2STW1695 TO-247 Tube
www.st.com
9
Page 2
Electrical ratings 2STW1695

1 Electrical ratings

Table 2. Absolute maximum rating

Symbol Parameter Value Unit
V
V
V
CBO
CEO
EBO
I
I
CM
P
T
T
C
tot
stg
J
Collector-base voltage (IE = 0) -140 V
Collector-emitter voltage (IB = 0) -140 V
Emitter-base voltage (IC = 0) -6 V
Collector current -10 A
Collector peak current (tP < 5 ms) -20 A
Total dissipation at Tc = 25 °C 100 W
Storage temperature -65 to 150 °C
Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case ______max 1.25 °C/W
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Page 3
2STW1695 Electrical characteristics

2 Electrical characteristics

(T
= 25 °C; unless otherwise specified)
case

Tabl e 4 . Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
BE
h
C
CBO
EBO
CBO
Collector cut-off current
= 0)
(I
E
Emitter cut-off current
= 0)
(I
C
Collector-emitter breakdown voltage (I
= 0)
B
Collector-base breakdown voltage (I
Emitter-base breakdown
(1)
voltage (I
Collector-emitter saturation
(1)
= 0)
E
= 0)
C
voltage
(1)
Base-emitter voltage V
DC current gain
FE
f
Transition frequency IC = -0.5 A V
T
Collector-base capacitance
= 0)
(I
E
V
V
I
I
I
I I
I I
V
= -140 V -0.1 µA
CB
= -6 V -0.1 µA
EB
= -50 mA -140 V
C
= -100 µA -140 V
C
= -1 mA -6 V
E
= -5 A IB = -500 mA
C
= -7 A IB = -700 mA
C
= -5 V IC = -5 A -1.3 V
CE
= -3 A V
C
= -5 A V
C
= -10 V f = 1 MHz 225 pF
CB
Resistive load
on
stg
t
f
Turn-on time
Storage time
Fall t ime
t
t
1. Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
= -5 A V
I
C
= -I
I
B1
= -0.5 A
B2
= -4 V
CE
= -4 V
CE
= -12 V 20 MHz
CE
= -60 V
CC
70
50
0.24
1.2
0.24
-0.5
-0.7VV
140
µs
µs
µs
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Page 4
Electrical characteristics 2STW1695

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Output characteristics
Figure 4. DC current gain Figure 5. Collector-emitter saturation
voltage
Figure 6. Base-emitter voltage Figure 7. Base-emitter voltage
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Page 5
2STW1695 Electrical characteristics

2.2 Test circuit

Figure 8. Resistive load switching test circuit

1) Fast electronic switch
2) Non-inductive resistor
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Page 6
Package mechanical data 2STW1695

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Page 7
2STW1695 Package mechanical data
TO-247 Mechanical data
Dim.
Min. Typ Max.
A4.855.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c0.40 0.80
D19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50
mm.
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Page 8
Revision history 2STW1695

4 Revision history

Table 5. Document revision history

Date Revision Changes
23-Oct-2006 1 Initial release
23-Sep-2007 2 Added figures 2, 3, 4, 5, 6, 7.
20-Feb-2007 3 Document status promoted from preliminary data to datasheet.
06-Oct-2008 4
Content reworked to improve readability, no technical changes.
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Page 9
2STW1695
y
y
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