High power PNP epitaxial planar bipolar transistor
■ High breakdown voltage V
■ Complementary to 2STW4468
■ Typical f
■ Fully characterized at 125
= 20 MHz
t
CEO
o
C
= -140 V
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
Figure 4.DC current gainFigure 5.Collector-emitter saturation
voltage
Figure 6.Base-emitter voltageFigure 7.Base-emitter voltage
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2STW1695Electrical characteristics
2.2 Test circuit
Figure 8.Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data2STW1695
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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2STW1695Package mechanical data
TO-247 Mechanical data
Dim.
Min.TypMax.
A4.855.15
A12.202.60
b1.01.40
b12.02.40
b23.03.40
c0.400.80
D19.8520.15
E15.4515.75
e5.45
L14.2014.80
L13.704.30
L218.50
øP3.553.65
øR4.505.50
S5.50
mm.
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Revision history2STW1695
4 Revision history
Table 5.Document revision history
DateRevisionChanges
23-Oct-20061Initial release
23-Sep-20072Added figures 2, 3, 4, 5, 6, 7.
20-Feb-20073Document status promoted from preliminary data to datasheet.
06-Oct-20084
Content reworked to improve readability, no technical changes.
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2STW1695
y
y
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