Datasheet 2SK3495 Datasheet (SANYO)

Ordering number : ENN6970

2SK3495

N-Channel Silicon MOSFET

2SK3495

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

• Meets radial taping.

Package Dimensions

unit : mm

2087A

[2SK3495]

6.9

4.5

1.01.0

0.6

0.9

123

0.5

2.5

1.45

1.0

1.0

4.0

0.45

1 : Source
2 : Drain

Specifications

2.54

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 4.8 A

2.54

3 : Gate
SANYO : NMP

60 V

±20 V

1.2 A

1W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=0.6A, VGS=10V 380 500 mΩ
RDS(on)2 ID=0.6A, VGS=4V 500 680 mΩ

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=0.6A 1.0 1.5 S

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Continued on next page

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52501 TS IM TA-3256

No.6970-1/4

Unit

2SK3495

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 70 pF
Output Capacitance Coss VDS=20V , f=1MHz 20 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 5 pF
Turn-ON Delay Time td(on) See specified Test Circuit 4 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.2A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.2A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.2A 0.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit 3 ns

r

See specified Test Circuit 4 ns

f

IS=1.2A, VGS=0 0.86 1.2 V

Switching Time Test Circuit

VDD=30V

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

IN

G

ID=0.6A
RL=50Ω

D

V

OUT

Ratings

min typ max

Unit

P.G

1.4

1.2

1.0

-- A
D

0.8

0.6

0.4

Drain Current, I

0.2

0

0 0.4 0.60.2 0.8 1.0 1.2 1.4 1.6 1.8 2.0

8.0V

10.0V

6.0V

4.0V

3.5V

I

D

3.0V

50Ω

5.0V

-- V

DS

S

V

GS

Drain-to-Source V oltage, VDS -- V

1200

1000

RDS(on) -- V

GS

2SK3495

I

-- V

-- A
D

2.5

VDS=10V

2.0

1.5

D

GS

=2.5V

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

IT03234 IT03235

Ta=25°C

1000

Gate-to-Source V oltage, VGS -- V

RDS(on) -- Ta

Ta=75°C

25

ID=0.6A

800

--25

C

°

C

°

(on) -- mΩ

800

DS

600

400

200

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

Gate-to-Source V oltage, VGS -- V

IT03236

(on) -- mΩ

DS

600

=0.6A, V

I

400

200

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

D

=0.6A, V

I

D

GS

GS

=4V

=10V

Ambient Temperature, Ta -- °C

IT03237

No.6970-2/4

y

fs -- I

Ta= --25

°

25



C

°

C

°

75

C

5
3

2

1.0
7
5

3
2

0.1
7
5

3
2

Forward Transfer Admittance, yfs -- S

0.01

0.001 0.01 0.1

D

23 5723 5723 57

Drain Current, ID -- A

SW Time -- I

t

(off)

d

t

f

td(on)

23 57

Switching Time, SW Time -- ns

100

7
5

3
2

10

7
5

3
2

1.0

Drain Current, I

V

10

VDS=10V

9

ID=1.2A

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

GS

t

r

-- Qg

D

D

1.00.1

-- A

Total Gate Charge, Qg -- nC

P

-- Ta

1.2

D

VDS=10V

23

1.0

IT03238

VDD=30V
VGS=10V

23

IT03240

IT03242

2SK3495

3

VGS=0

2

1.0
7
5

-- A
F

3
2

0.1
7
5

Forward Current, I

3
2

0.01

IF -- V

Ta=75°C

0.6 0.7 0.8 0.9 1.00.50.4

25°C

SD

--25

C

°

Diode Forward V oltage, VSD -- V

3
2

100

7
5

3
2

10

Ciss, Coss, Crss -- pF

7
5

3
2

0504010 20 30 60

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

Drain-to-Source V oltage, V

1.0

A S O

DC operation

23 57

10

7

IDP=4.8A

5
3

2

ID=1.2A

-- A

1.0
7

D

5
3

2

0.1
7

Operation in this area

Drain Current, I

5

is limited by RDS(on).

3
2

Ta=25°C
Single pulse

0.01
23 57

Drain-to-Source V oltage, V

DS

100ms

100.1

DS

DS

-- V

10ms

-- V

100µs

1ms

23

IT03239

f=1MHz

IT03241

10µs

57

IT03243

100

1.0

-- W
D

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT03244

No.6970-3/4

2SK3495

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.

No.6970-4/4

PS