Datasheet 2SK3448 Datasheet (SANYO)

Ordering number : ENN6785

2SK3448

N-Channel Silicon MOSFET

2SK3448

Ultrahigh-Speed Switching Use

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

• Meets radial taping.

Package Dimensions

unit : mm

2087A

[2SK3448]

6.9

4.5

1.01.0

0.6

0.9

123

0.5

2.5

1.45

1.0

1.0

4.0

0.45

1 : Source
2 : Drain

Specifications

2.54

2.54

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 10 A

3 : Gate
SANYO : NMP

60 V

±20 V

2.5 A

1W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1.5A, VGS=10V 115 150 mΩ
RDS(on)2 ID=1.0A, VGS=4V 150 210 mΩ

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=1.5A 2.7 3.8 S

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1500 TS IM TA-2921

No.6785-1/4

Unit

2SK3448

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 220 pF
Output Capacitance Coss VDS=20V , f=1MHz 75 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 28 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.5A 8.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.5A 1.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.5A 1.8 nC
Diode Forward Voltage V

SD

See specified Test Circuit 8 ns

r

See specified Test Circuit 16 ns

f

IS=2.5A, VGS=0 0.83 1.2 V

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=1.5A

RL=20Ω

V

OUT

Ratings

min typ max

Unit

P.G

3.5

6.0V

3.0

8.0V

2.5

-- A
D

2.0

10.0V

1.5

1.0

Drain Current, I

0.5

0

0

250

200

ID=1.0A

(on) -- mΩ

DS

150

100

50Ω

I

D

-- V

DS

2SK3448

S

5.0V

3.0V

4.0V

3.5V

0.4

0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

1.5A

V

GS

=2.5V

IT01245

Ta=25°C

I

-- V

-- A
D

6

VDS=10V

5

4

3

2

D

GS

Drain Current, I

1

Ta=75°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

25°C

Gate-to-Source V oltage, VGS -- V

RDS(on) -- Ta

=4V

GS

=1.0A, V

I

D

I

D

=1.5A, V

GS

=10V

(on) -- mΩ

300

250

200

DS

150

100

- -25°C

IT01246

50

Static Drain-to-Source

On-State Resistance, R

0

0 2 4 6 8 10 12

Gate-to-Source V oltage, VGS -- V

14 16 18 20

IT01247

50

Static Drain-to-Source

On-State Resistance, R

0

- -60

- -40 --20 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT01248

No.6785-2/4

fs -- S

y

Forward Transfer Admittance, 

Switching Time, SW Time -- ns

1.0

0.1

0.01

100

10

0.001

10

7
5

3
2

7
5

3
2

7
5

3
2

2

7
5

3
2

7
5

3
2

VDS=10V

VDD=30V
VGS=10V

td(on)

t

r

yfs -- I

Ta= --25°C

75°C

0.10.01 1.0

Drain Current, I

SW Time -- I

t

(off)

d

t

f

D

2SK3448

I

-- V

F

25°C

--25°C

Ciss

Coss

Crss

SD

SD

-- V

DS

VGS=0

IT01250

f=1MHz

D

25°C

23 5723 5723 5723 57

-- A

10

IT01249

D

10

7
5

3
2

1.0

-- A
F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

0.2 0.60.50.40.3 0.7 0.8 0.9 1.0 1.1 1.2

Ta=75°C

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

Ciss, Coss, Crss -- pF

1000

7
5

3
2

100

7
5

3
2

1.0

10

VDS=10V

9

ID=2.5A

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

0

1.2

1.0

-- W
D

0.8

23 5772357

0.1

Drain Current, I

1.0

D

-- A

10

IT01251

VGS -- Qg

10825679143

Total Gate Charge, Qg -- nC

P

-- Ta

D

IT01253

10

0

3
2

I

=10A

DP

10

7
5

I

=2.5A

D

3

-- A

2

D

1.0
7
5

Operation in

3

this area is

2

limited by RDS(on).

0.1

Drain Current, I

7
5

3

Ta=25°C

2

Single pulse

0.01
23 57 23 57 23 57

0.1

10 20

Drain-to-Source V oltage, V

A S O

DC operation

1.0 10 100

Drain-to-Source V oltage, V

DS

DS

-- V

10ms

100ms

-- V

6030 40 50

IT01252

<10µs

100µs

1ms

IT02522

0.6

0.4

0.2

Allowable Power Dissipation, P

0020 40

80 100 120

60

Amibient Tamperature, Ta -- °C

140 160

IT02523

No.6785-3/4

2SK3448

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.

No.6785-4/4

PS