Datasheet 2SK3414LS Datasheet (SANYO)

Ordering number : ENN7152

2SK3414LS

N-Channel Silicon MOSFET

2SK3414LS

DC / DC Converter Applications

Features

•

Low ON-resistance.

•

4V drive.

Package Dimensions

unit : mm

2078C

[2SK3414LS]

10.0

16.1

3.6

123

0.9

0.75

3.2

3.5

1.2

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 120 A

Tc=25°C25W

2.55

2.55

4.5

2.8

7.2

16.0

0.6

1.2

14.0

0.7

1 : Gate

2.4

2 : Drain
3 : Source

SANYO : TO-220FI(LS)

60 V

±20 V

30 A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=15A, VGS=10V 20 26 mΩ
RDS(on)2 ID=15A, VGS=4V 26 36 mΩ

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=15A 21 29 S

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM T A-3298

No.7152-1/4

Unit

2SK3414LS

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 1700 pF
Output Capacitance Coss VDS=20V , f=1MHz 380 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 110 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 16 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 190 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=30A 52 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=30A 6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=30A 12 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 100 ns

r

See specified Test Circuit. 90 ns

f

IS=30A, VGS=0 0.96 1.2 V

min typ max

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=15A
RL=2Ω

V

OUT

Ratings

Unit

P.G

30

50Ω

I

D

-- V

S

DS

2SK3414LS

3.0V

25

-- A

20

D

15

10

6.0V

8.0V

10.0V

3.5V

4.0V

2.5V

Drain Current, I

5

0

0 0.2 0.4 0.80.6 1.0 1.2 1.4 1.6 1.8 2.0

Drain-to-Source V oltage, V

60

50

RDS(on) -- V

DS

GS

-- V

VGS=2.0V

IT04123

Tc=25°C
ID=10A

I

-- V

70

60

50

-- A
D

40

30

20

Drain Current, I

10

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

D

Gate-to-Source V oltage, V

50

40

RDS(on) -- Tc

25°C

GS

Tc=75°C

- -25°C

GS

-- V

VDS=10V

°C

Tc= --25

75°C

IT04124

25°C

(on) -- mΩ

40

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

024 86 101214161820

Gate-to-Source V oltage, V

GS

-- V

IT04125

(on) -- mΩ

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140

=10A, V

I

D

=10A, V

I

D

GS

GS

=4V

=10V

Case Temperature, Tc -- °C

IT04126

No.7152-2/4

2SK3414LS

fs -- S

y

Forward Transfer Admittance, 

Switching Time, SW Time -- ns

100

10

1.0

0.1

0.01

1000

100

10

VDS=10V

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

0.001

7
5

3
2

7
5

3
2

0.1

10

VDS=10V

23 57

0.01

23 57

yfs -- I

Tc= --25°C

23 57

0.1

Drain Current, I

SW Time -- I

t

(off)

d

t

f

t

r

23 571023 57

1.0

Drain Current, I

V

GS

75°C

25°C

23 57

td(on)

-- Qg

D

23 571023 57

1.0

-- A

D

D

-- A

D

ID=30A

8

-- VAllowable Power Dissipation, P
GS

6

4

2

Gate-to-Source V oltage, V

0 5 10 15 20 25 30 35 40 45 50 55

Total Gate Charge, Qg -- nC

P

-- Ta

2.5

D

I

-- V

F

A S O

P

D

SD

25°C

--25°C

Ciss

Coss

Crss

DC Operation

-- Tc

SD

DS

10ms

100ms

DS

-- V

DS

-- V

1ms

-- V

100

VGS=0

7
5

3
2

10

7

-- A

5

F

3
2

1.0
7
5

3
2

0.1

Forward Current, I

7
5

3
2

0.01

100

IT04127 IT04128

VDD=30V
VGS=10V

100

IT04129

IT04131

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Diode Forward V oltage, V

10000

7
5

3
2

1000

7
5

3
2

Ciss, Coss, Crss -- pF

100

7
5

3

010203040506070

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, V

3
2

IDP=120A

100

7
5

ID=30A

3
2

-- A
D

10

7
5

3

Operation in this

2

area is limited by RDS(on).

1.0

Drain Current, I

7
5

3

Tc=25°C

2

Single pulse

0.10
2 3 57 2 3 57 2 3 57

0.1

Drain-to-Source V oltage, V

30

Tc=75°C

1.0 10 100

f=1MHz

IT04130

10µs

100µs

IT04132

-- W

2.0

D

1.5

1.0

0.5

No heat sink

25

-- W
D

20

15

10

5

Allowable Power Dissipation, P

0

20 40 60 80 100 120 140 160

0

Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C

IT04133

0

0 20 40 60 80 100 120 140 160

IT04134

No.7152-3/4

2SK3414LS

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.

No.7152-4/4

PS