Datasheet 2SK3413LS Datasheet (SANYO)

Ordering number : ENN7151

2SK3413LS

N-Channel Silicon MOSFET

2SK3413LS

DC / DC Converter Applications

Features

•

Low ON-resistance.

•

4V drive.

Package Dimensions

unit : mm

2078C

[2SK3413LS]

10.0

16.1

3.6

123

0.9

0.75

3.2

3.5

1.2

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 100 A

Tc=25°C25W

2.55

2.55

4.5

2.8

7.2

16.0

0.6

1.2

14.0

0.7

1 : Gate

2.4

2 : Drain
3 : Source

SANYO : TO-220FI(LS)

60 V

±20 V

25 A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=12A, VGS=10V 25 33 mΩ
RDS(on)2 ID=12A, VGS=4V 35 49 mΩ

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V , VDS=0 ±10 µA

VDS=10V, ID=12A 16 23 S

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM T A-3297

No.7151-1/4

Unit

2SK3413LS

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 1000 pF
Output Capacitance Coss VDS=20V , f=1MHz 280 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 100 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 120 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=25A 34 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=25A 5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=25A 8 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 72 ns

r

See specified Test Circuit. 90 ns

f

IS=25A, VGS=0 0.93 1.2 V

min typ max

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=12A
RL=2.5Ω

V

OUT

Ratings

Unit

P.G

25

20

8.0V

6.0V

50Ω

I

4.0V

5.0V

D

-- V

S

DS

2SK3413LS

3.5V

-- A
D

15

10.0V

10

3.0V

Drain Current, I

5

VGS=2.5V

0

0 0.2 0.4 0.80.6 1.0 1.2 1.4 1.6 1.8 2.0

Drain-to-Source V oltage, V

80

70

RDS(on) -- V

DS

GS

-- V

IT04111

Tc=25°C
ID=12A

I

-- V

50

VDS=10V

45

40

35

-- A
D

30

25

20

15

Drain Current, I

10

5
0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

D

Gate-to-Source V oltage, V

80

70

RDS(on) -- Tc

25°C

GS

Tc=75°C

- -25°C

GS

Tc= --25

-- V

°C

25°C

75°C

IT04112

60

(on) -- mΩ

50

DS

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

024 86 101214161820

Gate-to-Source V oltage, V

GS

-- V

IT04113

60

(on) -- mΩ

50

DS

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140

=12A, V

I

D

=12A, V

I

D

GS

GS

=4V

=10V

Case Temperature, Tc -- °C

IT04114

No.7151-2/4

2SK3413LS

fs -- S

y

Forward Transfer Admittance, 

Switching Time, SW Time -- ns

100

10

1.0

0.1

0.01

0.001

100

VDS=10V

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

23 57

5

3

2

7
5

3

2

0.01

23 57

yfs -- I

Tc= --25°C

0.1

Drain Current, I

SW Time -- I

t

f

t

25°C

23 57

t

(off)

d

r

D

75°C

23 571023 57

1.0

-- A

D

D

td(on)

10

-- VAllowable Power Dissipation, P
GS

Gate-to-Source V oltage, V

23 57

0.1

10

VDS=10V

9

ID=25A

8

7

6

5

4

3

2

1
0

0 5 10 15 20 25 30 35

Drain Current, I

1.0

V

GS

23 57

-- A

D

-- Qg

10

Total Gate Charge, Qg -- nC

P

-- Ta

2.5

D

I

-- V

F

25°C

Coss

A S O

P

D

Ciss

Crss

SD

--25°C

SD

DS

10ms

100ms

DC Operation

DS

-- Tc

-- V

DS

-- V

1ms

-- V

100

VGS=0

7
5

3
2

10

7

-- A

5

F

3
2

1.0
7
5

3
2

0.1

Forward Current, I

7
5

3
2

0.01

100

IT04115 IT04116

VDD=30V
VGS=10V

23 5

IT04117

IT04119

0.2 0.4 0.6 0.8 1.0 1.2

10000

7
5

3
2

1000

7
5

3
2

100

7

Ciss, Coss, Crss -- pF

5
3

2

10

0102030405060

2

IDP=100A

100

7
5

ID=25A

3
2

-- A

10

D

7
5

3

Operation in this

2

area is limited by RDS(on).

1.0

Drain Current, I

7
5

3

Tc=25°C

2

Single pulse

0.1

2 3 57 2 3 57 2 3 57

0.1

30

Tc=75°C

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, V

1.0 10 100

Drain-to-Source V oltage, V

f=1MHz

IT04118

10µs

100µs

IT04120

-- W

2.0

D

1.5

1.0

0.5

No heat sink

25

-- W
D

20

15

10

5

Allowable Power Dissipation, P

0

20 40 60 80 100 120 140 160

0

Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C

IT04121

0

0 20 40 60 80 100 120 140 160

IT04122

No.7151-3/4

2SK3413LS

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.

No.7151-4/4

PS