Datasheet 2SK3412 Datasheet (SANYO)

Ordering number : ENN7176

2SK3412

N-Channel Silicon MOSFET

2SK3412

DC / DC Converter Applications

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

4V drive.

Package Dimensions

unit : mm

2083B

4

[2SK3412]

0.8

[2SK3412]

1.55.5

1.5

5.5

1.6

unit : mm

2092B

6.5

5.0

0.85

0.7

0.6

1

23

2.3 2.3

6.5

5.0

7.0

7.5

2.3

0.5

2.3

0.5

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

0.5

7.0

2.5

0.5

1.2

0 to 0.2

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

0.85

1243

0.6

2.3 2.3

0.8

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41002 TS IM TA-3528

No.7176-1/4

2SK3412

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 52 A

Tc=25°C20W

Electrical Characteristics at Ta=25°C

60 V

±20 V

14 A

1W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V, f=1MHz 550 pF

Output Capacitance Coss VDS=20V, f=1MHz 170 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 60 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 95 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=14A 19 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=14A 3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=14A 4.2 nC
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=7A, VGS=10V 48 62 mΩ
RDS(on)2 ID=7A, VGS=4V 64 90 mΩ

r

f

SD

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=7A 8 11 S

See specified Test Circuit. 12 ns

See specified Test Circuit. 20 ns

IS=14A, VGS=0 0.94 1.2 V

min typ max

Ratings

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=7A
RL=4.29Ω

V

OUT

Unit

P.G

50Ω

S

2SK3412

No.7176-2/4

I

-- V

D

5.0V

DS

4.0V

DS

GS

VGS=2.5V

-- V

14

12

10

-- A
D

8

6

4

Drain Current, I

2

0

0 0.2 0.4 0.80.6 1.0 1.2 1.4 1.6 1.8 2.0

6.0V

8.0V

10.0V

Drain-to-Source V oltage, V

120

100

RDS(on) -- V

3.5V

3.0V

IT04183

Tc=25°C
ID=7A

2SK3412

I

-- V

-- A

30

VDS=10V

25

20

D

GS

Ta= --25

D

15

10

Drain Current, I

5

25°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Gate-to-Source V oltage, V

120

100

RDS(on) -- Tc

Ta=75°C

- -25

°C

-- V

GS

°C

75°C

25°C

IT04184

80

(on) -- mΩ

DS

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

024 86 101214161820

fs -- S

y

Forward Transfer Admittance, 

Switching Time, SW Time -- ns

10

1.0

0.1

0.01

100

10

3

VDS=10V

2

7
5

3
2

7
5

3
2

7
5

3
2

0.001

3
2

7
5

3
2

7
5

3

0.1

Gate-to-Source V oltage, V

23 57

0.01

23 57

Drain Current, I

SW Time -- I

23 57

Drain Current, I

yfs -- I

°C

Tc= --25

25°C

23 57

0.1

t

d

23 57

1.0

75°C

(off)

t

t

-- V

GS

D

23 571023 5

1.0

-- A

D

D

f

r

10

-- A

D

(on) -- mΩ

80

DS

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140

IT04185

100

7
5

3
2

10

7

-- A

5

F

3
2

1.0
7
5

3
2

0.1

Forward Current, I

7
5

3
2

0.01

0.2 0.4 0.6 0.8 1.0 1.2

IT04187 IT04188

VDD=30V
VGS=10V

td(on)

23 5

IT04189

3
2

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

0102030405060

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, V

=7A, V

I

D

I

D

Case Temperature, Tc -- °C

I

F

°C

Tc=75

=7A, V

-- V

25°C

Ciss

Coss

Crss

GS

--25

GS

SD

°C

=4V

=10V

SD

DS

-- V

DS

-- V

IT04186

VGS=0

f=1MHz

IT04190

No.7176-3/4

V

-- Qg

10

VDS=10V

9

ID=14V

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

02468101214161820

GS

Total Gate Charge, Qg -- nC

P

-- Ta

1.2

1.0

-- W

D

D

0.8

0.6

0.4

IT04191

2SK3412

100

7

IDP=52A

5
3

2

ID=14A

10

-- A

7

D

5
3

2

Operation in this

1.0

area is limited by RDS(on).

7

Drain Current, I

5
3

2

Tc=25°C
Single pulse

0.1
2 3 57 2 3 57 2 3 57

0.1

25

-- W

20

D

15

10

A S O

10ms

DC Operation

100ms

1.0 10 100

Drain-to-Source V oltage, V

P

-- Tc

D

DS

-- V

≤10µs

100µs

1ms

IT04192

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

IT04193

5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc -- °C

IT04194

This catalog provides information as of April, 2002. Specifications and information herein are subject
to change without notice.

No.7176-4/4

PS