Datasheet 2SK3207 Datasheet (HIT)

2SK3207

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

RDS = 70 mΩ typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

ADE-208-758A(Z)

Target Specification 2nd. Edition

Feb 1999

TO–220FM

G

D

1. Gate

2. Drain

1

2

3

S

3. Source

2SK3207

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

3

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

150 V
±20 V
18 A
72 A
18 A
18 A
24 mJ
35 W

2

2SK3207

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 1118—SI
Input capacitance Ciss — 1100 — pF VDS = 10V
Output capacitance Coss — 350 — pF VGS = 0
Reverse transfer capacitance Crss — 170 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse recovery

t

d(on)

r

d(off)

f

DF

rr

time
Note: 4. Pulse test

150 — — V ID = 10mA, VGS = 0
±20——VI

= ±100µA, VDS = 0

G

——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 150 V, VGS = 0

1.0 — 2.5 V ID = 1mA, VDS = 10V
—7090mΩI

= 9A, VGS = 10V*

D

— 85 120 mΩ ID = 9A, VGS = 4V*

= 9A, VDS = 10V*

D

— 15 — ns ID = 9A, VGS = 10V
— 110 — ns RL = 3.33Ω
— 270 — ns
— 130 — ns
— 0.9 — V IF = 18A, VGS = 0
— 150 — ns IF = 18A, VGS = 0

diF/ dt = 50A/µs

4

4

4

3

2SK3207

Package Dimensions

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

0.7 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

12.0 ± 0.3

2.0 ± 0.3

5.0 ± 0.3

2.54 ± 0.5

4.45 ± 0.3

2.7

0.6

2.8 ± 0.2

2.5 ± 0.2

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1
Hitachi Code

EIAJ

JEDEC

TO–220FM

SC–67

—

4

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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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