Datasheet 2SK3151 Datasheet (HIT)

2SK3151

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

R

= 11.5 mΩ typ.

DS (on)

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

ADE-208-747A (Z)

2nd. Edition

February 1999

TO–3P

1

G

D

2

1. Gate

1

2

3

S

3

2. Drain
(Flange)

3. Source

2SK3151

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

100 V
±20 V
50 A
200 A
50 A
50 A
250 mJ
125 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

100 — — V ID = 10 mA, VGS = 0
±20——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 100 V, VGS = 0

1.0 — 2.5 V ID = 1 mA, VDS = 10 V
— 11.5 15 mΩ ID = 25 A, VGS = 10 V

—1625mΩ ID = 25 A, VGS = 4 V
Forward transfer admittance |yfs|3050—S ID = 25 A, VDS = 10 V
Input capacitance Ciss — 4000 — pF VDS = 10 V
Output capacitance Coss — 1650 — pF VGS = 0
Reverse transfer capacitance Crss — 590 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 30 — ns ID = 25 A, VGS = 10 V

— 280 — ns RL = 1.2 Ω

— 830 — ns

— 450 — ns

— 0.95 — V IF = 50 A, VGS = 0

— 100 — ns IF = 50 A, VGS = 0

diF/ dt = 50 A/ µs

Note: 4. Pulse test

Note4

Note4

Note4

2

Main Characteristics

2SK3151

160

Power vs. Temperature Derating

120

80

40

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

50

40

D

30

V = 10 V

GS

4 V

3.5 V

Pulse Test

3 V

1000

300

D

300

100

100

30

10

Drain Current I (A)

3

1

12 5

100

80

D

60

Maximum Safe Operation Area

10 µs

100 µs

1 ms

PW = 10 ms (1 shot)

DC Operation (Tc = 25°C)

Operation in
this area is
limited by R

DS(on)

Ta = 25°C

50 100

20

10

Drain to Source Voltage V (V)

DS

Typical Transfer Characteristics

V = 10 V

DS

Pulse Test

200

20

Drain Current I (A)

10

0

246810

Drain to Source Voltage V (V)

2.5 V

2 V

DS

40

Drain Current I (A)

20

0

75°C

12345

Gate to Source Voltage V (V)

Tc = –25°C

25°C

GS

3

2SK3151

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1.0
Pulse Test

0.8

DS(on)

V (V)

0.6

I = 50 A

D

0.4

20 A

0.2

10 A

Drain to Source Saturation Voltage

0
0

48

Gate to Source Voltage V (V)

12

16 20

GS

Static Drain to Source on State Resistance

vs. Temperature

50

Ω

Pulse Test

40

DS(on)

R (m )

30

20

4 V

I = 50 A

D

10,20 A

10,20 A

10

V = 10 V

GS

0

Static Drain to Source on State Resistance

–50 0 50 100 150 200

Case Temperature Tc (°C)

50 A

Static Drain to Source on State Resistance

vs. Drain Current

100

Ω

Pulse Test

50

V = 4 V

DS(on)

20

R (m )

GS

10

10 V

5

2

Drain to Source On State Resistance

1

1

2

Drain Current I (A)

20 100

10

D

Forward Transfer Admittance vs.

Drain Current

500

V = 10 V

200

fs

DS

Pulse Test

100

50
20

10

Tc = –25 °C

25 °C

5
2

75 °C

1

Forward Transfer Admittance |y | (S)

0.5

0.1 0.3 1 3 10 30 100
Drain Current I (A)

D

505

200

4

2SK3151

Body–Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

di / dt = 50 A / µs
V = 0, Ta = 25°C

GS

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

Dynamic Input Characteristics

200

I = 50 A

D

DS

160

V = 100 V

DD

50 V
25 V

120

V

DS

80

40

Collector to Emitter Voltage V (V)

0

V = 100 V

DD

50 V
25 V

80 160 240 320 400

Gate Charge Qg (nc)

DR

V

GS

Typical Capacitance vs.
Drain to Source Voltage

30000

10000

3000

1000

Capacitance C (pF)

300

100

01020304050

Drain to Source Voltage V (V)

20

16

GE

5000

1000

Switching Characteristics

500

12

200

8

4

0

100

50

Switching Time t (ns)

Gate to Emitter Voltage V (V)

20

10

0.1 0.2

0.5

Drain Current I (A)

V = 0

GS

f = 1 MHz

Ciss

Coss

Crss

DS

t

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1%

2

1

5

10

20

D

50

5

2SK3151

Reverse Drain Current vs.

Source to Drain Voltage

50

10 V

40

F

30

V = 0, –5 V

20

5 V

GS

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
15 V

50Ω

Pulse Test

SDF

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

250

AR

200

150

100

50

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

1

E = • L • I •

AR

2

I

AP

V

DD

I

V

DD

0

2

AP

D

I = 50 A

AP

V = 50 V

DD

duty < 0.1 %
Rg > 50

Ω

V

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

6

2SK3151

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03
Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m 100 m 1 10

Pulse Width PW (S)

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 1.0°C/W, Tc = 25 °C

P

DM

PW

T

D =

PW

T

Switching Time Test Circuit Waveform

Vin Monitor

Vout
Monitor

D.U.T.

R

Vin
10 V

50Ω

L

V

DD

= 30 V

Vin

Vout

10%

10%

90%

td(on)

tr

90%

td(off)

90%

10%

t

f

7

2SK3151

Package Dimensions

16.0 max

0.5 typ

φ

3.2 ± 0.2

1.0 typ

Unit: mm

5.0 max

1.5 typ

5.0 ± 0.3

1.6 typ

1.4 max

2.0 typ

1.0 ± 0.2

3.6 typ

5.45 ± 0.2 5.45 ± 0.2

0.9 typ

1.0 typ

2.0 typ

20.1 max18.0 ± 0.5

14.9 ± 0.2

0.3 typ

2.8 typ

0.6 ± 0.2

Hitachi Code

EIAJ

JEDEC

TO–3P

SC–65

—

8

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