Datasheet 2SK3150-S, 2SK3150-L Datasheet (HIT)

2SK3150(L), 2SK3150(S)

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-750A (Z)

2nd. Edition

February 1999

Features

• Low on-resistance

RDS = 45 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

4

1

2

3

4

LDPAK

G

D

S

2SK3150(L),2SK3150(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

100 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

20 A

Drain peak current I

D(pulse)

Note1

60 A

Body-drain diode reverse drain current I

DR

20 A

Avalanche current I

AP

Note3

20 A

Avalanche energy E

AR

Note3

40 mJ

Channel dissipation Pch

Note2

50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

100 — — V ID = 10 mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ±100 µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±16 V, VDS = 0

Zero gate voltege drain current I

DSS

——10µAVDS = 100 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

1.0 — 2.5 V ID = 1 mA, VDS = 10 V

Static drain to source on state R

DS(on)

—4560mΩ ID = 10 A, VGS = 10 V

Note4

resistance R

DS(on)

—6585mΩ ID = 10 A, VGS = 4 V

Note4

Forward transfer admittance |yfs| 8.5 15 — S ID = 10 A, VDS = 10 V

Note4

Input capacitance Ciss — 900 — pF VDS = 10 V
Output capacitance Coss — 400 — pF VGS = 0
Reverse transfer capacitance Crss — 210 — pF f = 1 MHz
Turn-on delay time t

d(on)

— 15 — ns ID = 10 A, VGS = 10 V

Rise time t

r

— 120 — ns RL = 3 Ω

Turn-off delay time t

d(off)

— 200 — ns

Fall time t

f

— 150 — ns

Body–drain diode forward voltage V

DF

— 0.9 — V IF = 20 A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— 90 — ns IF = 20 A, VGS = 0

diF/ dt = 50A/ µs

Note: 4. Pulse test

2SK3150(L),2SK3150(S)

3

Main Characteristics

80

60

40

20

0

50 100 150 200

100

3

10

1

0.1

0.05
1 2 10 20 100

20

16

12

8

4

0

12345

0

246810

Ta = 25 °C

Tc = 75°C

25°C

–25°C

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Operation in
this area is
limited by R

DS(on)

V = 10 V
Pulse Test

DS

100 µs

1 ms

PW =10 ms (1shot)

DC Operation (Tc = 25°C)

10 µs

20

16

12

8

4

3.5 V

3 V

V =2.5 V

GS

10 V

Pulse Test

6 V

4 V

0.3

500

30

550

200

0.5

500

2SK3150(L),2SK3150(S)

4

1

10 100

2

50

500

20

50

10

250

200

150

100

50

–40 0 40 80 120 160

0

0.1 0.3 1 3 10 30 100

50

20

5

10

1

2

0.5

205

2.5

2.0

1.5

1.0

0.5

0

48

12

16 20

I = 15 A

D

5 A

10 A

200

100

V = 4 V

GS

10 V

V = 4 V

GS

10 V

25 °C

Tc = –25 °C

75 °C

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on

)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R ( )mΩ

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature T

c

(°C)

DS(on)

R ( )

Static Drain to Source on State Resistance

mΩ

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

Pulse Test

Pulse Test

V = 10 V
Pulse Test

DS

Pulse Test

15 A

5,10 A

15 A

5,10 A

2SK3150(L),2SK3150(S)

5

0.1 0.3

13

10 30 50

01020304050

2000

10000

1000

100

200

500

200

160

120

80

40

0

20

16

12

8

4

20 40 60 80 100

0

500

50

5

10

2
1

20

200

1000

20

100

10

0.1 0.2 1

2

10

20

di / dt = 50 A / µs
V = 0, Ta = 25°C

GS

10

20

50

V = 0
f = 1 MHz

GS

Ciss

Coss

Crss

I = 15 A

D

V

GS

V

DS

V = 100 V

50 V
25 V

DD

t

f

r

t

d(on)

t

d(off)

t

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.
Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

V = 10 V, V = 30 V
PW = 5 µs, duty < 1%

GS

DD

V = 100 V

50 V
25 V

DD

50

500

0.5 50

5000

100

200

2SK3150(L),2SK3150(S)

6

20

16

12

8

4

0

0.2 0.4 0.6 0.8 1.0

V = 0, –5 V

GS

10 V

5 V

50

40

30

20

10

25 50 75 100 125 150

0

D. U. T

Rg

I
Monitor

AP

V
Monitor

DS

V

DD

50Ω

Vin
15 V

0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1

V

V – V

AR

AP

DSS

DSS DD

2

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

Channel Temperature Tch (°C)

Repetive Avalanche Energy E (mJ)

AR

Maximun Avalanche Energy vs.

Channel Temperature Derating

Avalanche WaveformAvalanche Test Circuit

I = 20 A
V = 50 V
duty < 0.1 %
Rg > 50

AP

DD

Ω

2SK3150(L),2SK3150(S)

7

Vin Monitor

D.U.T.

Vin
10 V

R

L

V
= 30 V

DD

tr

td(on)

Vin

90%

90%

10%

10%

Vout

td(off)

Vout
Monitor

50Ω

90%

10%

t

f

Switching Time Test Circuit Waveform

3

1

0.3

0.1

0.03

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

Normalized Transient Thermal Impedance

100 m 1 10

s (t)

γ

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C

θ γ θ
θ

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Normalized Transient Thermal Impedance vs. Pulse Width

2SK3150(L),2SK3150(S)

8

Package Dimensions

Unit: mm

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

1.2 ± 0.2

2.54 ± 0.5

11.3 ± 0.5

(1.5)

0.86

+0.2
–0.1

3.0

+0.3

–0.5

0.76 ± 0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

2.54 ± 0.5

(1.5)

0.86

+0.2
–0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

1.2 ± 0.2

(1.5)

0.1

+0.2
–0.1

L type S type

Hitachi Code

EIAJ

JEDEC

LDPAK

—
—

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