Datasheet 2SK3133-S, 2SK3133-L Datasheet (HIT)

2SK3133(L),2SK3133(S)

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-720 (Z)

Target Specification

1st. Edition

February 1999

Features

• Low on-resistance

R

DS(on)

= 7 mΩ typ.

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

4

1

2

3

4

LDPAK

G

D

S

2SK3133(L),2SK3133(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

30 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

50 A

Drain peak current I

D(pulse)

Note 1

200 A

Body-drain diode reverse drain current I

DR

50 A

Channel dissipation Pch

Note 2

50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

30——V I

D

= 10 mA, VGS = 0

Gate to source leak current I

GSS

——±0.1 µAVGS = ±20 V, VDS = 0

Zero gate voltege drain current I

DSS

——10µAVDS = 30 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

1.0 — 2.5 V ID = 1 mA, VDS = 10 V

Note 1

Static drain to source on state R

DS(on)

— 7 10 mΩ ID = 25 A, VGS = 10 V

Note 1

resistance — 12 18 mΩ ID = 25 A, VGS = 4 V

Note 1

Forward transfer admittance |yfs| TBD TBD — S ID = 25 A, VDS = 10 V

Note 1

Input capacitance Ciss — TBD — pF VDS = 10V
Output capacitance Coss — TBD — pF VGS = 0
Reverse transfer capacitance Crss — TBD — pF f = 1 MHz
Total gate charge Qg — TBD — nc VDD = 10 V
Gate to source charge Qgs — TBD — nc VGS = 10 V
Gate to drain charge Qgd — TBD — nc ID = 50 A
Turn-on delay time t

d(on)

— TBD — ns VGS = 10 V, ID = 25 A

Rise time t

r

— TBD — ns RL = 0.4 Ω

Turn-off delay time t

d(off)

— TBD — ns

Fall time t

f

— TBD — ns

Body–drain diode forward voltage V

DF

— TBD — V IF = 50 A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— TBD — ns IF = 50 A, VGS = 0

diF/ dt = 50 A/ µs

Note: 1. Pulse test

2SK3133(L),2SK3133(S)

3

Main Characteristics

80

60

40

20

0

50 100 150 200

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

2SK3133(L),2SK3133(S)

4

Package Dimensions

Unit: mm

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

1.2 ± 0.2

2.54 ± 0.5

11.3 ± 0.5

(1.5)

0.86

+0.2
–0.1

3.0

+0.3

–0.5

0.76 ± 0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

2.54 ± 0.5

(1.5)

0.86

+0.2
–0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

1.2 ± 0.2

(1.5)

0.1

+0.2
–0.1

L type S type

Hitachi Code

EIAJ

JEDEC

LDPAK

—
—

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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