Datasheet 2SK3110 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3110 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.

FEATURES

•Gate voltage rating ±30 V

•Low on-state resistance

DS(on)

= 180 mΩ MAX. (VGS = 10 V, ID = 7.0 A)

R

•Low input capacitance

iss

C

= 1000 pF TYP. (VDS = 10 V, VGS = 0 V)

•Built-in gate protection diode

•Avalanche capability rated

•Isolated TO-220 package

2SK3110

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3110 Isolated TO-220

ABSOLUTE MAXIMUM RATING (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS = 0 V) V

C

Drain Current(DC) (T
Drain Current(pulse)
Total Power Dissipation (T
Total Power Dissipation (T

= 25°C) I

Note1

A

= 25°C) P

C

= 25°C) P

Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note1.

2.

PW ≤ 10

Starting T

µ

ch

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Note2

Note2

s, Duty Cycle ≤ 1 %

= 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V

DSS

GSS

D(DC)

D(pulse)

I

T1

T2

ch

stg

AS

I

AS

E

200 V

±30 V
±14 A
±42 A

2.0 W
35 W

150 °C

−55 to +150 °C
14 A
98 mJ

Document No. D13333EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan

The mark ★ shows major revised point s.

©

1998,1999, 2000

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

2SK3110

Drain Leakage Current I
Gate Leakage Current I
Gate Cut-off Voltage
Forward Transfer Admittance | yfs |V
Drain to Source On-state Resistance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DSS

GSS

GS(off)

V

d(on)

r

d(off)

f

F(S-D)

rr

DS(on)

iss

oss

rss

G

GS

GD

rr

VDS = 200 V, VGS = 0 V 100
VGS = ±30 V, VDS = 0 V ±10
VDS = 10 V, ID = 1 mA 2.5 4.5 V

DS

= 10 V, ID = 7.0 A 3.0 S
VGS = 10 V, ID = 7.0 A 120 180
VDS = 10 V 1000 pF
VGS = 0 V 300 pF
f = 1 MHz 150 pF
VDD = 100 V, ID = 7.0 A 25 ns

GS(on)

V

= 10 V 70 ns

RG = 10 Ω

VDD = 160 V 40 nC
VGS = 10 V 7 nC
ID = 14 A 25 nC
IF = 14 A, VGS = 0 V 1.0 V
IF = 14 A, VGS = 0 V 300 ns
di/dt = 50 A/µs

mΩ

80 ns
40 ns

1.5

µ

A

µ

A

µ

C

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

VGS = 20 → 0 V

V

G

R

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

G

= 2 mA

PG.

I

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

R

G

= 10 Ω

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

10 %10

0

t

d(on)

V

90

%

I

trt

t

on

GS(on)

D

d(off)tf

%

90

90

%

%

t

off

L

R

V

DD

2

Data Sheet D13333EJ1V0DS00

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

V

GS

- Gate to Source Voltage - V

R

DS(on)

- Drain to Source On-state Resistance - mΩ

500
450
400
350
300
250
200
150
100

50

0

0

24

6

810

12 14

16 18 20

I

D

=

14 A

7.0 A

2.8 A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

I

D

- Drain Current - A

R

DS(on)

- Drain to Source On-state Resistance - mΩ

1

10

100

Pulsed

300

250

200

150

100

50

0

0.1

V

GS

= 10 V

V

GS

= 30 V

★

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3110

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

50
45

V

40

GS

35
30
25
20
15

- Drain Current - A

D

I

10

5
0

0

2

V

DS -

GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

4

Drain to Source Voltage - V

5.0

4.5

4.0

3.5

3.0

= 30 V

6

V
I

V

GS

DS

D

= 1 mA

= 10 V

Pulsed

8

= 10 V

10

FORWARD TRANSFER CHARACTERISTICS

100

10

1

0.1

- Drain Current - A

D

I

0.01

0.001

100

2

34

1

0

V

GS -

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

V

DS

=10 V

Pulsed

Gate to Source Voltage - V

5

67

T

ch

= 125˚C
75˚C
25˚C

-25˚C

10

Tch = -25˚C

Tch = 25˚C

1

Tch = 75˚C

T

ch = 125˚C

0.1

8

Pulsed

VDS = 10 V

910

11 12

2.5

- Gate to Source Cut-off Voltage - V

2.0

GS(off)

V

− 50

0 150

− 25 25 75

ch

- Channel Temperature - ˚C

T

50

100

125

Data Sheet D13333EJ1V0DS00

| - Forward Transfer Admittance - mΩ

0.01

fs

|y

0.01

0.1
I

1

D

- Drain Current - A

10

100

3

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

T

ch

- Channel Temperature - ˚C

R

DS(on)

- Drain to Source On-state Resistance - mΩ

350

300

250

200

150

100

50

0

− 50

50

100

0 150− 25 25 75 125

ID = 14 A

ID = 7.0 A

V

GS

= 10 V

Pulsed

10000

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

VGS = 0 V
f = 1 MHz

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

V

GS

= 10 V

1

- Diode Forward Current - A

SD

I

0.1

0.0

0.2

0.6 0.8 1.4

0.4

V

SD

- Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1 000

V

GS

= 0 V

1.0 1.2

2SK3110

Pulsed

1.6

t

r

1000

- Capacitance - pF

rss

100

, C

oss

, C

iss

C

10

0.1

1 10 100

DS

- Drain to Source Voltage - V

V

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1 000

100

10

trr - Reverse Recovery Time - ns

1

0.1

1 10 100

I

D - Drain Current - A

C

iss

C

oss

C

rss

di/dt = 50A /
V

GS = 0 V

1000

µ

s

100

- Switching Time - ns

f

10

, t

d(off)

, t

r

, t

d(on)

t

1

0.1

1 10 100

D

- Drain Current - A

I

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

200

ID = 14 A

V

DD

150

= 160 V
100 V
40 V

100

V

DD

= 160 V

50

- Drain to Source Voltage - V

DS

V

0

0

100 V
40 V

10 20 30 40 50

Q

G

- Gate Charge - nC

V

DD
GS

V
R

G

t
t

= 100 V
= 10 V

= 10 Ω

t

f

d(off)
d(on)

16
14
12
10

8
6
4

- Gate to Source Voltage - V

2

GS

V

0

60

4

Data Sheet D13333EJ1V0DS00

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

T

C

- Case Temperature - ˚C

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

20

40

60

80

100

0

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

T

C

- Case Temperature - ˚C

P

T

- Total Power Dissipation - W

0

20 40 60 80 100 120 140 160

40

30

20

10

0

FORWARD BIAS SAFE OPERATING AREA

100

10

R

DS(on)

Limited

I

D(DC)

Power Dissipation Limited

I

D(pulse)

10 ms

100 ms

1 ms

3 ms

100

PW = 10

µs

2SK3110

µs

1

- Drain Current - A

D

I

TC = 25 ˚C
Single Pulse

0.1
1

DS -

Drain to Source Voltage - V

V

1 000

100

0.1

0.01

(t) - Transient Thermal Resistance - ˚C/W

th

r

0.001

10 100 1000

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

10

1

µ

100

10

µ

1 m 10 m 100 m 1 10 100 1 000

PW - Pulse Width - s

R

th(ch-A)

R

th(ch-C)

= 62.5˚C/W

= 3.57˚C/W

Single Pulse

Data Sheet D13333EJ1V0DS00

5

2SK3110

SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD

L

- Inductive Load - mH

I

AS

- Single Avalanche Energy - A

0.1

1

10

100

10

1

0.01

VDD = 100 V
VGS = 20 V 0 V
RG = 25 Ω
Starting T

ch

= 25˚C

IAS = 14 A

E

AS

= 98 mJ

SINGLE AVALANCHE ENERGY
DERATING FACTOR

Starting T

ch

- Starting Channel Temperature - ˚C

Energy Defrating Factor - %

50

75

100

120

100

80

60

40

20

0

25

VDD = 100 V
VGS = 20 V 0 V
RG = 25 Ω
I

AS

14 A

125 150

6

Data Sheet D13333EJ1V0DS00

PACKAGE DRAWING(Unit : mm)

Isolated TO-220 (MP-45F)

2SK3110

10.0±0.3

3.2±0.2

φ

3±0.1

15.0±0.3

4±0.2

0.7±0.1 1.3±0.2

1.5±0.2

2.54 TYP.2.54 TYP.

123

4.5±0.2

12.0±0.213.5 MIN.

0.65±0.1

1.Gate

2.Drain

3.Source

2.7±0.2

2.5±0.1

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate
Protection
Diode

Source

Diode

The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

Data Sheet D13333EJ1V0DS00

7

2SK3110

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.

M7 98. 8