Datasheet 2SK2726 Datasheet (HIT)

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Avalanche ratings

Outline

2SK2726

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-453 B

3rd. Edition

TO–220CFM

G

D

1

2

3

S

1. Gate

2. Drain

3. Source

2SK2726

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

3

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

500 V
±30 V
7A
28 A
7A
7A

2.7 mJ
30 W

2

2SK2726

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state

R

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 3.5 6.0 — S ID = 4A, VDS = 10V*
Input capacitance Ciss — 1100 — pF VDS = 10V
Output capacitance Coss — 330 — pF VGS = 0
Reverse transfer capacitance Crss — 65 — pF f = 1MHz
Total gate charge Qg — 21 — nc VDD = 400V
Gate to source charge Qgs — 5 — nc VGS = 10V
Gate to drain charge Qgd — 8 — nc ID = 7A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

500 — — V ID = 10mA, VGS = 0

±30——V I

——±10 µAV
——10µAV

= ±100µA, VDS = 0

G

= ±25V, VDS = 0

GS

= 500 V, VGS = 0

DS

2.5 — 3.5 V ID = 1mA, VDS = 10V*
— 0.75 0.95 Ω ID = 4A, VGS = 10V*

— 20 — ns VGS = 10V, ID = 4A
— 65 — ns RL = 7.5Ω
—60—ns
—40—ns
— 0.95 — V ID = 7A, VGS = 0

— 260 — ns IF = 7A, VGS = 0

diF/ dt = 100A/µs

1

1

1

3

2SK2726

Main Characteristics

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10

10 V

6 V

8

Pulse Test

100

Maximum Safe Operation Area

30
10

D

3

DC Operation (Tc = 25

1

Operation in

0.3

this area is

0.1

limited by R

Drain Current I (A)

DS(on)

0.03
Ta = 25 °C

0.01

1310

Drain to Source Voltage V (V)

Typical Transfer Characteristics

10

V = 10 V

DS

Pulse Test

8

10 µs

100 µs

PW = 10 ms (1shot)

30

1 ms

100

°C)

300

DS

1000

D

6

4

Drain Current I (A)

2

0

Drain to Source Voltage V (V)

4

5 V

4.5 V

V = 4 V

GS

10 20 30 40 50

DS

D

6

Tc = 75°C

4

Drain Current I (A)

2

0

25°C

246810

Gate to Source Voltage V (V)

–25°C

GS

2SK2726

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

20

Pulse Test

16

DS(on)

V (V)

12

8

I = 7 A

D

4

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

12

16 20 0.1 1 100.2 5

GS

Static Drain to Source on State Resistance

vs. Temperature

5

Pulse Test

Ω

4

DS(on)

R ( )

3

I = 7 A

D

2

V = 10 V

GS

1

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

2 A

Case Temperature Tc (°C)

5 A

2 A

5 A

Static Drain to Source on State Resistance

vs. Drain Current

5

Pulse Test

2

DS(on)

R ( )Ω

1

V = 10, 15 V

GS

0.5

0.2

Drain to Source On State Resistance

0.1

20.5

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

20

fs

10

5

Tc = –25 °C

25 °C

2

1

75 °C

0.5
V = 10 V

DS

Forward Transfer Admittance |y | (S)

0.2

Pulse Test

0.1 0.2 0.5 1 2 5 10
Drain Current I (A)

D

20

20

5

2SK2726

Body to Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

di / dt = 100 A / µs
V = 0, Ta = 25 °C

GS

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

DR

Typical Capacitance vs.
Drain to Source Voltage

5000
2000

1000

Ciss

500
200

100

Coss

50
20

Capacitance C (pF)

10

V = 0

5

f = 1 MHz

2

GS

Crss

01020304050

Drain to Source Voltage V (V)

DS

500

Dynamic Input Characteristics

DS

V = 100 V

DD

250 V

400

DS

V

400 V

300

V

GS

200

100

V = 400 V

DD

I = 7 A

250 V

Drain to Source Voltage V (V)

0

8 16243240

100 V

Gate Charge Qg (nc)

20

16

GS

1000

300

100

t

d(off)

12

t

Switching Characteristics

30

8

D

4

10

Switching Time t (ns)

3

Gate to Source Voltage V (V)

0

1

0.1 0.3 3 10 100

f

t

r

V = 10 V, V = 30 V

GS

t

d(on)

DD

PW = 10 µs, duty < 1 %

Drain Current I (A)

D

301

6

2SK2726

Reverse Drain Current vs.

Source to Drain Voltage

10

8

DR

6

4

5, 10 V

V = 0, –5 V

GS

2

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Pulse Test

Source to Drain Voltage V (V)

SD

Maximum Avalanche Energy vs.

Channel Temperature Derating

4.0
I = 7 A

AP

V = 50 V

AR

3.2

DD

duty < 1 %
Rg > 50

Ω

2.4

1.6

0.8

0

Repetive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin
15 V

Avalanche Test Circuit Avalanche Waveform

V

DSS

V – V

DSS DD

AR

1
2

V

DS

L

E = • L • I •

AP

2

Monitor

I

AP

Monitor

I

Rg

D. U. T

V

DD

AP

V

I

D

50Ω

V

DD

0

DS

V

(BR)DSS

7

2SK2726

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

Pulse Width PW (S)

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 4.17 °C/W, Tc = 25 °C

P

DM

PW

T

D =

100 m 1 10

PW

T

Switching Time Test Circuit Switching Time Waveforms

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

Vin Monitor

Vin
10 V

D.U.T.

50Ω

8

Package Dimensions

2SK2726

Unit: mm

1.0 ± 0.2

1.15 ± 0.2

0.6 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

φ

3.2 ± 0.2

4.1 ± 0.3 12.0 ± 0.3

2.54 ± 0.5

4.45 ± 0.3

2.5 ± 0.2

2.7 ± 0.2

15.0 ± 0.3

13.6 ± 1.0

0.7 ± 0.1

Hitachi Code

EIAJ

JEDEC

TO–220CFM

—
—

9

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX