Datasheet 2SK2724 Datasheet (NEC)

DATA SHEET

Drain

Gate

Gate Protection
Diode

Source

Body
Diode

MOS FIELD EFFECT POWER TRANSISTORS

2SK2724

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Low On-Resistance

DS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A)

R
RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A)

• Low Ciss Ciss =1 200 pF Typ.

• Built-in G-S Protection Diode

• Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PACKAGE DIMENSIONS (in millimeter)

10.0 ±0.3

15.0 ±0.3

123

MP-45F (ISOLATED TO-220)

3.2 ±0.2

3 ±0.1

4 ±0.2

1.3 ±0.20.7 ±0.1

1.5 ±0.2

2.542.54

4.5 ±0.2

12.0 ±0.213.5 MIN.

0.65 ±0.1

Gate

1.
Drain

2.
Source

3.

2.7 ±0.2

2.5 ±0.1

Document No. D10515EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±35 A
Drain Current (Pulse)* I
Total Power Dissipation (TA = 25 ˚C)
Total Power Dissipation (TC = 25 ˚C)
Channel Temperature T
Storage Temperature Tstg –55 to +150 ˚C

µ

* PW ≤ 10

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may
be applied to this device.

s, duty cycle ≤ 1 %

The information in this document is subject to change without notice.

D(pulse) ±140 A

PT 2.0 W
PT 30 W

ch 150 ˚C

©

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Drain to Source On-State Resistance

Gate to Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V
Forward Transfer Admittance |yfs|VDS = 10 V, ID = 18 A 10 23 S
Drain Leakage Current IDSS VDS = 60 V, VGS = 0 10
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
Input Capacitance Ciss VDS = 10 V, 1 200 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Turn-On Delay Time td(on) ID = 18 A, 35 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf
Total Gate Charge QG ID = 35 A, 50 nC
Gate to Source Charge QGS
Gate to Drain Charge QGD
Body Diode Forward Voltage VF(S-D) IF = 35 A, VGS = 0 1.0 V
Reverse Recovery Time trr IF = 35 A, VGS = 0, 70 ns
Reverse Recovery Charge Qrr

RDS(on)1 VGS = 10 V, ID = 18 A 20 27 mΩ
RDS(on)2 VGS = 4 V, ID = 18 A 33 40 mΩ

VGS = 0,
f = 1 MHz

570 pF
270 pF

VGS(on) = 10 V,
VDD = 30 V,

RG = 10 Ω

280 ns
160 ns
170 ns

VDD = 48 V,
VGS = 10 V

5.0 nC
22 nC

di/dt = 100 A/µs

130 nC

2SK2724

µ

A

µ

A

Test Circuit 1 Switching Time Test Circuit 2 Gate Charge

PG.

V

GS

0

t

t = 1 s

µ

Duty Cycle ≤ 1 %

R

G

D.U.T.

R

G

= 10 Ω

L

R

V

DD

V

GS

Wave Form

I

D

Wave Form

V

I

D

GS

0

0

10 %

10 %

t

d(on)tr

90 %

t

on

V

GS(on)

I

D

t

d(off)tf

90 %

t

off

90 %

10 %

PG.

D.U.T.

IG = 2 mA

50 Ω

R

L

V

DD

2

2SK2724

FORWARD BIAS SAFE OPERATING AREA

V

DS -

Drain to Source Voltage - V

I

D

- Drain Current - A

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - A

FORWARD TRANSFER CHARACTERISTICS

V

GS

- Gate to Source Voltage - V

I

D

- Drain Current - A

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

T

C

- Case Temperature - ˚C

dT - Percentage of Rated Power - %

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

T

C

- Case Temperature - ˚C

P

T

- Total Power Dissipation - W

0

20

0

20 40 60 80 100 120 140 160

20

40

60

80

100

40 60 80 100 120 140 160

35

30

25

20

15

10

5

0

2

3

4

100

1

10

100

200

1

0

Pulsed

51015

V

GS

= 20 V

VGS = 4 V

VGS = 10 V

Pulsed

Tch = –25 ˚C

25 ˚C

125 ˚C

VDS = 10 V

1

10

100

1 000

0.1 1 10 100

I

D(pulse)

= 140 A

I

D(DC)

= 35 A

Power Dissipation

Limited(P

T

= 30 W)

R

DS(on)

Limited (V

GS

= 10 V)

PW = 1 ms

PW = 10 ms

PW = 200 ms

Tc = 25 ˚C
Single Pulse

1 000

PW = 100 s

µ

3

1 000

100

10

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

th(ch-a)

= 62.5 ˚C/W

2SK2724

1

0.1

- Transient Thermal Resistance - ˚C/W

0.01

th(t)

r

0.001

µ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1 000

T

ch

100

= –25 ˚C

25 ˚C
75 ˚C

125 ˚C

10

100

µ

1 m 10 m 100 m 1 10 100 1 000 10

VDS = 10 V
Pulsed

PW - Pulse Width - s

R

th(ch-c)

= 4.2 ˚C/W

Single Pulse

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

Pulsed

60

40

ID = 18 A

20

| - Forward Transfer Admittance - S

fs

1

|y

1

10

D

- Drain Current - A

I

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

80

60

40

VGS = 4 V

- Drain to Source On-State Resistance - mΩ

DS(on)

R

20

0

VGS = 10 V

1

10 100

ID - Drain Current - A

100 1 000

Pulsed

- Drain to Source On-State Resistance - mΩ

DS(on)

R

0

10

VGS - Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

2.0

1.5

1.0

0.5

- Gate to Source Cutoff Voltage - V

GS(off)

0

V

–50

0 50 100 150

ch

- Channel Temperature - ˚C

T

20 30

VDS = 10 V
I

D

= 1 mA

4

2SK2724

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE

80

60

VGS = 4 V

40

- Drain to Source On-State Resistance - mΩ

DS(on)

R

20

0

–50

0

T

ch

- Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

50

VGS = 10 V

100 150

10 000

1 000

- Capacitance - pF

rss

, C

100

oss

, C

iss

C

10

0.1

1 10 100

V

DS

- Drain to Source Voltage - V

I

D

= 18 A

VGS = 0
f = 1 MHz

C

iss

C

oss

C

rss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

1

- Diode Forward Current - A

SD

0.1

I

0

VGS = 0

0.5

V

SD

- Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1 000

100

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

1.0

0.1

1.0 10 100

I

D

- Drain Current - A

t

t

d(off)

f

Pulsed

=30 V

=10 V

1.5

1.0

t

r

t

d(on)

DD

V
V

GS(on)

G

=10 Ω

R

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1000

100

10

- Reverse Recovery time - ns

rr

t

1.0

0.1

1.0 10 100

I

F

- Diode Current - A

di/dt = 50 A/ s

GS

V

= 0

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80

60

V

DD

= 12 V

40

20

- Drain to Source Voltage - V

DS

V

0

30 V
48 V

V

DS

20 40 60 80

V

GS

Qg - Gate Charge - nC

ID = 35 A

16
14
12
10
8
6
4

- Gate to Source Voltage - V

GS

2

V

0

5

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. C10535E
Semiconductor device package manual. C10943X
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. X10679E
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037

2SK2724

6

[MEMO]

2SK2724

7

2SK2724

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

2