Page 1
2SK2684(L), 2SK2684(S)
Silicon N Channel DV–L MOS FET
High Speed Power Switching
ADE-208-542
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 20 mΩ typ. (VGS = 10V, ID = 15 A)
• 4V gate drive devices.
• High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
Page 2
2SK2684(L), 2SK2684(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
30 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
30 A
Drain peak current I
D(pulse)
*
1
120 A
Body to drain diode reverse drain current I
DR
30 A
Channel dissipation Pch*
2
50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Page 3
2SK2684(L), 2SK2684(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20——V I
G
= ±100µA, VDS = 0
Zero gate voltege drain
current
I
DSS
——10µAV
DS
= 30 V, VGS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16V, VDS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.0 V ID = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—2028mΩI
D
= 15A, VGS = 10V*
1
resistance R
DS(on)
—3550mΩI
D
= 15A, VGS = 4V*
1
Forward transfer admittance |yfs|1218—SI
D
= 15A, VDS = 10V*
1
Input capacitance Ciss — 750 — pF VDS = 10V
Output capacitance Coss — 520 — pF VGS = 0
Reverse transfer capacitance Crss — 210 — pF f = 1MHz
Turn-on delay time t
d(on)
— 16 — ns VGS = 10V, ID = 15A
Rise time t
r
— 260 — ns RL = 0.67Ω
Turn-off delay time t
d(off)
—85—ns
Fall time t
f
—90—ns
Body to drain diode forward
voltage
V
DF
— 1.0 — V IF = 30A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 45 — ns IF = 30A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
Page 4
2SK2684(L), 2SK2684(S)
4
Main Characteristics
100
75
50
25
0
50 100 150 200
500
200
100
20
50
10
2
5
1
0.5
0.1 0.3 1
3
10
30
100
50
40
30
20
10
0
246810
50
40
30
20
10
0
246810
3.5 V
4 V
5 V
10 V
V = 3 V
GS
6 V
4.5 V
Tc = 75°C
25°C
–25°C
Ta = 25 °C
100 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
DS
Page 5
2SK2684(L), 2SK2684(S)
5
1.0
0.8
0.6
0.4
0.2
0
48
12
16 20 1 10 100250
500
200
100
20
50
10
5
100
80
60
40
20
–40 0 40 80 120 160
0
0.1 0.3 1 3 10 30 100
100
30
3
10
0.3
1
0.1
I = 20 A
D
5 A
10 A
205
V = 4 V
GS
10 V
I = 20 A
D
V = 4 V
GS
10 V
5, 10 A
5, 10, 20 A
25 °C
Tc = –25 °C
75 °C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R (m )
DS(on)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V = 10 V
Pulse Test
DS
Pulse Test
Page 6
2SK2684(L), 2SK2684(S)
6
0.1 0.3 1 3 10 30 100
01020304050
10000
2000
5000
1000
100
200
500
50
40
30
20
10
0
20
16
12
8
4
8 16243240
0
1000
300
30
100
3
10
1
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
V = 5 V
10 V
25 V
DD
I = 30 A
D
V
GS
V
DS
V = 25 V
10 V
5 V
DD
1000
300
30
100
3
10
1
0.1 0.3 1 3 10 30 100
V = 10 V, V = 10 V
PW = 5 µs, duty < 1 %
GS
DD
t
f
r
t
d(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
Page 7
2SK2684(L), 2SK2684(S)
7
50
40
30
20
10
0
0.4 0.8 1.2 1.6 2.0
V = 0, –5 V
GS
10 V
5 V
3
1
0.3
0.1
0.03
0.01
10 µ
100 µ 1 m 10 m
100 m 1 10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
Pulse Test
Page 8
2SK2684(L), 2SK2684(S)
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 10 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
t
f
Switching Time Test Circuit Waveform
Page 9
2SK2684(L), 2SK2684(S)
9
Package Dimensions
Unit: mm
10.2 ± 0.3
(1.4)
8.6 ± 0.3
1.27 ± 0.2
1.2 ± 0.2
2.54 ± 0.5
11.3 ± 0.5
(1.5)
0.86
+0.2
–0.1
3.0
+0.3
–0.5
0.76 ± 0.1
10.0
+0.3
–0.5
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
10.2 ± 0.3
(1.4)
8.6 ± 0.3
1.27 ± 0.2
2.54 ± 0.5
(1.5)
0.86
+0.2
–0.1
10.0
+0.3
–0.5
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
1.2 ± 0.2
(1.5)
0.1
+0.2
–0.1
L type S type
Hitachi Code
EIAJ
JEDEC
LDPAK
—
—
Page 10
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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