Datasheet 2SK2632 Specification

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN5531B

2SK2632LS

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON-resistance.

· Low Qg.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PD

PW≤10µs, duty cycle≤1%
Tc=25˚C

Package Dimensions

unit:mm

2078B

[2SK2632LS]

10.0

3.2

16.1

3.6

123

3.5

7.2

0.9

1.2

0.75

2.4

2.552.55

16.0

14.0

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source
SANYO : TO220FI-LS

008V
03±V

5.2A

5.7A

0.2W
52W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

SSD
SSG

SG

SD

I

SSD)RB(

D

V

SD

V

SG

)ffo(VSDI,V01=

)no(VSGI,V51=

SD
SD
SD

V,Am1=

0=008V

SG

V,V008=

0=0.1Am

SG

V,V03±=

0=001±An

SD

Am1=5.35.5V

D

A3.1=7.04.1S

D

A3.1=6.38.4

D

zHM1=f,V02=055Fp
zHM1=f,V02=051Fp
zHM1=f,V02=07Fp

N2000TS (KOTO) TA-3034 No.5531–1/4

sgnitaR

nimpytxam

Continued on next page.

tinU

Ω

2SK2632LS

Continued from preceding page.

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egrahCetaGlatoTgQVSDV,V002=

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

DS

V,A5.2=

S

SG

Marking : K2632

Switching Time Test Circuit

VDD=200V

ID=1.3A

RL=154Ω

D

V

OUT

PW=1µs
D.C.≤0.5%

VGS=15V

G

I,V01=

SG

D

tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS54sn
tiucriCtseTdeificepseeS32sn

0=48.02.1V

sgnitaR

nimpytxam

A5.2=51Cn

tinU

P.G

6

5

–A

4

D

3

2

Drain Current, I

1

0

10

9

8

– Ω

7

(on)

6

DS

5
4

3

2

1

Static Drain-to-Source

On-State Resistance, R

0

0

10 20 40 5030

Drain-to-Source Voltage, VDS–V

Gate-to-Source Voltage, V

R

GS

50Ω

I

-- V

D

RDS(on) -- V

I

=2.5A

D

1.3A

0.5A

82122014 16 186104

2SK2632LS

S

DS

GS

GS

–V

I

-- V

4.0

15V

10V

8V

7V

VGS=6V

IT00743 IT00744

Tc=25°C

IT00745

3.5

3.0

–A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

00

0

10

9

8

– Ω

7

(on)

6

DS

5
4

3

2
1

Static Drain-to-Source

On-State Resistance, R

0

--50

Gate-to-Source Voltage, VGS–V

D

5152010

RDS(on) -- Tc

I

D

Case Temperature, Tc – ˚C

=1.3A, V

=1.3A, V

I

D

50--25 15025 75 100 1250

GS

Tc=--25°C

25°C

75°C

=10V

GS

=15V

GS

VDS=10V

IT00746

No.5531–2/4

2SK2632LS

fs | – S

y

1.0

Forward Transfer Admittance, |

1000

100

Switching Time, SW Time – ns

1000

100

Ciss, Coss, Crss – pF

0.1

1.0

10

10

10

3.0

yfs -- I

7
5

3
2

7
5

3
2

0.1

75°C

°

25

Drain Current, ID–A

SW Time -- I

7
5

3
2

7
5

3
2

t

7
5

3
2

23 57

0.1

r

Drain Current, ID–A

Ciss, Coss, Crss -- V

7
5

3
2

7
5

3
2

0

10 15 20 25 305

Drain-to-Source Voltage, VDS–V

P

D

C

1.0

1.0

Ciss

Coss

Crss

D

C

°

Tc=--25

257325

D

td(off)

t

f

23 57

-- Ta

VDS=10V

7

6

5

(off) – V

4

GS

3

2

Cutoff Voltage, V

1

73

10

IT00747

VDD=200V
VGS=15V

td(on)

10

IT00749 IT00750

DS

f=1MHz

IT00751

0

--50

100

7
5
3
2

10

7
5

–A

3
2

F

1.0
7
5

3
2

0.1
7
5

3

Forward Current, I

2

0.01
7
5

3
2

0.001
0

2

IDP=7.5A

10

7
5

ID=2.5A

3
2

–A

1.0

D

,I

7
5

3
2

Operation in

0.1

this area is

Drain Current

7

limited by RDS(on).

5
3

Tc=25°C

2

Single pulse

0.01

1.0

30

0.2 0.4 0.6 0.8 1.0 1.2

23 571023 57

VGS(off) -- Tc

Case Temperature, Tc – ˚C

Tc=75

Diode Forward Voltage, VSD–V

50 100 1500

I

-- V

F

SD

C

°

C

°C

°

25

--25

F.B A S O

<10

1ms

10ms

100ms

DC operation

23 57

-- Tc

100

DS

–V

Drain-to-Source Voltage, V

P

D

VDS=10V
ID=1mA

IT00748

VGS=0

µs

100

µs

IT00752

1000

–W

2.5

D

2.0

1.5

1.0

0.5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C

IT00754

–W

25

D

20

15

10

5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

IT00753

No.5531–3/4

2SK2632LS

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.

PS No.5531–4/4