SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6600
2SK2631
N-Channel Silicon MOSFET
2SK2631
Ultrahigh-Speed Switching Applications
Features
•
Low ON resistance.
• Smaller amount of total gate charge.
Package Dimensions
unit : mm
2083B
[2SK2631]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
unit : mm
2092B
[2SK2631]
6.5
5.0
4
1.55.5
0.8
1.5
5.5
1.6
2.3
7.0
7.5
2.3
0.5
0.5
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
3
0.8
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
63000 TS IM TA-3024
No.6600-1/5
2SK2631
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 3 A
Tc=25°C30W
Electrical Characteristics at T a=25 °C
800 V
±30 V
1A
1.0 W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance |yfs| VDS=10V, ID=0.5A 370 740 ms
Static Drain-to-Source On-State Resistance RDS(on) ID=0.5A, VGS=15V 7.5 10 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 300 pF
Output Capacitance Coss VDS=20V , f=1MHz 85 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 40 pF
Total Gate Charge Qg VDS=200V, ID=1A, VGS=10V 8 nC
Turn-ON Delay Time td(on) See specified Test Circuit 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 27 ns
Fall Time t
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
r
f
SD
=1mA, VGS=0 800 V
VDS=800V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA
See specified Test Circuit 8 ns
See specified Test Circuit 16 ns
IS=1A, VGS=0 0.82 1.2 V
Ratings
min typ max
Marking : K2631
Switching Time Test Circuit
VDD=200V
D
ID=0.5A
RL=400Ω
V
OUT
15V
0V
V
IN
PW=1µs
D.C.≤0.5%
V
IN
Unit
P.G
R
GS
50Ω
G
2SK2631
S
No.6600-2/5
I
-- V
D
3.0
2.5
2.0
-- A
D
1.5
1.0
DS
Drain Current, I
0.5
0 5 10 15 20 25 30 35 40 45 50
VGS=6V
Drain-to-Source V oltage, VDS -- V
16
14
RDS(on) -- V
=1.0A
I
D
GS
(on) -- Ω
DS
12
10
0.5A
0.1A
8
Static Drain-to-Source
ON State Resistance, R
6
02468101214161820
Gate-to-Source V oltage, VGS -- V
Forward Transfer Admittance, |yfs| -- S
1.0
0.1
0.01
10
7
5
3
2
7
5
3
2
7
5
3
2
0.1
|yfs| -- I
D
Tc= --25°C
25°C
75°C
1.0
Drain Current, ID -- A
I
-- V
F
--25°C
SD
SD
-- V
10
7
5
3
2
1.0
7
-- A
5
F
3
2
0.1
7
5
3
2
0.01
Forward Current, I
7
5
3
2
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tc=75°C
25°C
Drain-to-Source V oltage, V
2SK2631
I
-- V
2.0
15V
10V
8V
7V
IT02479 IT02480
Tc=25°C
IT02481
VDS=10V
1.8
1.6
1.4
-- A
D
1.2
1.0
0.8
0.6
Drain Current, I
0.4
0.2
00
0 5 10 15 20
Gate-to-Source V oltage, VGS -- V
18
16
14
(on) -- Ω
12
DS
10
8
6
4
Static Drain-to-Source
ON State Resistance, R
2
0
--75 --50 --25 0 25 50 75 100 125 150
7
6
5
D
RDS(on) -- Tc
I
D
Case Temperature, Tc -- °C
VGS(off) -- Tc
(off) -- V
4
GS
3
2
Cutoff Voltage, V
1
0
27325
IT02483
VGS=0
IT02485
3
--50 --25 0 25 50 75 100 125 150
Case Temperature, Tc -- °C
Ciss, Coss, Crss -- V
10 15 20 25 305
Ciss, Coss, Crss -- pF
1000
100
7
5
3
2
7
5
3
2
10
0
Drain-to-Source V oltage, V
=0.5A, V
=0.5A, V
I
D
Ciss
Coss
Crss
GS
Tc= --25°C
=10V
GS
=15V
GS
25°C
DS
75°C
DS
-- V
VDS=10V
IT02482
VDS=10V
ID=1mA
IT02484
f=1MHz
IT02486
No.6600-3/5
V
-- Qg
10
VDS=200V
ID=1A
9
8
-- V
7
GS
6
5
4
3
2
Gate-to-Sourse V oltage, V
1
0
012345678
GS
Total Gate Charge, Qg -- nC
10
7
5
IDP=3A
3
2
ID=1A
-- A
1.0
7
D
5
3
2
Operation in
0.1
this area is
7
Drain Current, I
5
limited by RDS(on).
3
2
Tc=25°C
Single pulse
0.01
23 571023 57
1.0
1.2
Drain-to-Source V oltage, V
A S O
P
D
-- Ta
1ms
10ms
DC operation
23 57
100
-- V
DS
10µs
100µs
IT02487
1000
IT02489
2SK2631
100
7
5
3
2
SW Time -- I
td(on)
Switching Time, SW Time -- ns
10
7
5
3
0.1
23 57
t
r
Drain Current, I
P
40
35
-- W
D
30
25
20
15
10
5
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
D
-- Tc
t
f
D
D
t
d
-- A
(off)
1.0
Case Temperature, Tc -- °C
VDD=200V
VGS=15V
2
IT02488
IT02490
1.0
-- W
D
0.8
0.6
0.4
0.2
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02491
No.6600-4/5
2SK2631
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
No.6600-5/5
PS
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