Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6228A
2SK2627
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Low Qg.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25°C
Package Dimensions
unit:mm
2128
[2SK2627]
8.2
7.8
0.4
4.2
2.5
6.2
0.2
3
8.4
10.0
1.2
2
1.0
2.54
6.2
1.0
2.54
1
5.08
10.0
6.0
0.6
0.7
0.3
0.6
7.8
5.2
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
(Bottom view)
006V
03±V
5A
02A
04W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
SD
SD
SD
0=006V
SG
V,V006=
0=0.1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=5.35.5V
D
A5.2=5.10.3S
D
V,A5.2=
V51=5.10.2
SG
zHM1=f,V02=007Fp
zHM1=f,V02=022Fp
zHM1=f,V02=011Fp
N2000TS (KOTO) TA-2882 No.6228–1/4
sgnitaR
nimpytxam
Continued on next page.
tinU
Ω
2SK2627
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egrahCetaGlatoTgQVSDV,V002=
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
I
V,A5=
DS
S
0=78.02.1V
SG
Switching Time Test Circuit
VDD=200V
V
IN
15V
0V
PW=1µs
D.C.≤0.5%
V
IN
G
D
ID=2.5A
RL=80.0Ω
V
OUT
I,V01=
SG
D
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS52sn
sgnitaR
nimpytxam
A5=02Cn
tinU
P.G
5
4
RGS=50Ω
ID-
V
S
DS
15V
2SK2627
8V
10V
–A
3
D
2
7V
Drain Current, I
1
VGS=6V
0
0246810
Drain-to-Source Voltage, VDS– V Drain-to-Source Voltage, VDS–V
I
-
V
8
VDS=10V
7
6
–A
5
D
4
3
Drain Current, I
2
1
0
024 166 8 10 12 14
D
GS
Tc=
-
25°C
25
75
°C
°C
Gate-to-Source Voltage, VGS–V
10
ID-
V
DS
15V
10V
8
–A
6
D
4
Drain Current, I
2
8V
7V
VGS=6V
0
0 1020304050
y
|
fs |
-
I
25
-
75°C
D
VDS=10V
°C
25°C
75235
10
7
5
fs|–S
y
3
2
1.0
7
5
3
2
Forward Transfer Admittance, |
0.1
0.1
23
Tc=
7
1.0
Drain Current, ID–A
10
No.6228–2/4
R
1.0A
DS(on)
I
D
2.5A
3.0
2.8
2.6
– Ω
2.4
DS(on)
2.2
2.0
1.8
1.6
1.4
Static Drain-to-Source
On-State Resistance, R
1.2
1.0
0481216 2420
-
=5.0A
Gate-to-Source Voltage, VGS–V
V
6
5
GS(off)
–V
4
GS(off)
3
2
Cutoff Voltage, V
1
2SK2627
V
GS
Tc=25°C
5
4
– Ω
DS(on)
3
2
1
Static Drain-to-Source
On-State Resistance, R
0
-
60
-
40 0 40 12080
R
DS(on)
-
20 20 60 140 160100
Case Temperature, Tc – ˚C
-
Tc
VDS=10V
ID=1mA
100
7
5
3
2
10
7
5
3
Switching Time, SW Time – ns
2
td(on)
SW Time
t
(off)
d
t
f
t
r
-
Tc
ID=2.5A
=10V
GS
V
15V
-
I
D
VDD=200V
VGS=15V
0
-60-40-
20 20 40 80 100 1400 120 16060
Case Temperature, Tc – ˚C
IF-
V
3
2
10
7
–A
5
F
3
2
1.0
7
5
3
2
0.1
7
Diode Forward Current, I
5
3
2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
75°C
SD
°C
25°C
-
25
Tc=
Diode Forward Voltage, VSD–V
5
3
IDP=20A
2
10
7
ID=5A
5
–A
3
D
2
,I
1.0
7
Operation in this area
5
is limited by RDS(on).
3
2
Drain Current
0.1
7
5
Tc=25°C
3
Single pulse
2
10 100
Drain-to-Source Voltage, VDS–V
A S O
DC operation
23 57
10ms
100ms
100
1ms
10
µ
s
23 5723 57
<1µs
µ
s
1000
1.0
1.0 10
2257
3573
Drain Current, ID–A
2
1000
7
5
3
2
100
7
5
Ciss,Coss,Crss – pF
3
2
10
0 4 8 121620242832
Ciss,Coss,Crss-V
DS
f=1MHz
Ciss
Coss
Crss
Drain-to-Source Voltage, VDS–V
P
-
45
40
–W
35
D
30
25
20
15
10
5
Allowable Power Dissipation, P
0
0 20 40 60 80 120100 140 160
D
Tc
Case Temperature, Tc – ˚C
No.6228–3/4
2SK2627
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.
PS No.6228–4/4
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