Datasheet 2SK2625ALS Datasheet (SANYO)

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

Ordering number : ENA0359A

2SK2625ALS

SANYO Semiconductors

N-Channel Silicon MOSFET

DATA SHEET

2SK2625ALS

General-Purpose Switching Device
Applications

Features

• Low ON-resistance.

• Low Qg.

• Ultrahigh-speed switching.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V

Drain Current (DC)
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *3 E
Avalanche Current *4 I

*1 Shows chip capability
*2 Package limited
*3 VDD=50V, L=10mH, IAV=4A
*4 L≤10mH, single pulse

Marking : K2625

DSS
GSS

IDc*1 Limited only by maximum temperature 5 A

I

*2 SANYO’s ideal heat dissipation condition 4.4 A

Dpack

DP

AS

AV

PW≤10µs, duty cycle≤1% 16 A

D

Tc=25°C (SANYO’s ideal heat dissipation condition) 30 W

600 V
±30 V

2.0 W

87 mJ

4A

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the

'

customer
device, the customer should always evaluate and test devices mounted in the customer
equipment.

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

'

s products or

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22107 TI IM TC-00000530 / 72006QB MS IM TC-00000029

No. A0359-1/5

Electrical Characteristics at Ta=25°C

2SK2625ALS

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 700 pF
Output Capacitance Coss VDS=20V , f=1MHz 220 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 110 pF
Total Gate Charge Qg VDS=200V, ID=5A, VGS=10V 20 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 50 ns
Fall Time t
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs





RDS(on) ID=2.5A, VGS=15V 1.5 2.0 Ω

r

f

SD

=1mA, VGS=0V 600 V
VDS=600V, VGS=0V 1.0 mA
VGS=±30V , VDS=0V ±100 nA

VDS=10V, ID=2.5A 1.5 3.0 S

See specified Test Circuit. 20 ns

See specified Test Circuit. 25 ns
IS=5A, VGS=0V 0.88 1.2 V

min typ max

Ratings

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7509-002

VDD=200V

10.0

3.2

3.5

7.2

4.5

2.8

PW=1µs
D.C.≤0.5%

VGS=15V

D

ID=2.5A
RL=80.0Ω

V

OUT

Unit

16.0

16.1

123

0.9

1.2

0.75

2.4

14.0

1.2

0.7

1 : Gate
2 : Drain

3.6

3 : Source

2.55

2.55

SANYO : TO-220FI(LS)

Avalanche Resistance Test Circuit

≥50Ω
RG

15V

0V

50Ω

2SK2625ALS

0.6

G

P.G

L

V

DD

RGS=50Ω

S

2SK2625ALS

No. A0359-2/5

2SK2625ALS

I

-- V

D

6

5

4

-- A
D

3

DS

15V

10V

8V

8

7

6

-- A

5

D

4

I

D

-- V

GS

Tc=

VDS=10V

--25°C

25°C

75°C

2

Drain Current, I

1

0

12 43 56789

0

4.0

3.5

3.0

(on) -- Ω

ID=1A

DS

2.5

2.0

1.5

Static Drain-to-Source

On-State Resistance, R

1.0
4

681012 14 16 18 20

10

7
5

3

2

1.0
7

5

3

Forward Transfer Admittance, yfs -- S

2

0.1

100

7
5

3
2

10

7
5

3
2

-- A
S

1.0
7
5

3
2

0.1
7
5

3
2

Source Current, I

0.01
7
5

3
2

0.001

23 57

0

0.3 0.6 0.9 1.2

Drain-to-Source Voltage, VDS -- V

RDS(on) -- V

GS

5A

2.5A

Gate-to-Source Voltage, VGS -- V



y

fs -- I

Tc= --25°C

C

°

25

75

D

C

°

1.0

23 5

Drain Current, ID -- A

I

-- V

S

SD

C

°

C

C

°

°

25

Tc=75

--25

Diode Forward Voltage, VSD -- V

7V

VGS=6V

10

IT03649 IT03650

Tc=25°C

IT03651

VDS=10V

3

Drain Current, I

2

1

0

0

3.5

3.0

2.5

(on) -- Ω

DS

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5

--50

--25 0 25 50 75 100 125 150

6

-- V

5

°C

C

°

Tc=75

25°C

--25

51015

Gate-to-Source Voltage, VGS -- V

RDS(on) -- Tc

=10V

GS

=15V

=2.5A, V

D

GS

=2.5A, V

D

I

I

Case Temperature, Tc -- °C

VGS(off) -- Tc

(off)

GS

4

3

Cutoff Voltage, V

2

--25 0 25 50 75 100 125 150

1000

--50

3
2

7
5

3
2

Case Temperature, Tc -- °C

Ciss, Coss, Crss -- V

Ciss

Coss

DS

7

IT03653

VGS=0V

Crss

100

Ciss, Coss, Crss -- pF

7
5

3

IT03655

1.5

0

510152025

Drain-to-Source Voltage, V

DS

-- V

20

IT03652

VDS=10V
ID=1mA

IT03654

f=1MHz

30

IT03656

No. A0359-3/5

2SK2625ALS

100

7

5

3

2

Switching Time, SW Time -- ns

10

35

2.5

-- W

2.0

D

1.5

1.0

SW Time -- I

t

d

t

f

td(on)

7

1.0

Drain Current, I

P

D

(off)

t

r

23 57

-- A

D

-- Ta

D

VDD=200V
VGS=10V

IT03657

3

IDP=16A

2

10

IDc(*1)=5A

7
5

I

(*2)=4.4A

3

Dpack

-- A

2

D

1.0
7
5

3

Operation in this

2

area is limited by RDS(on).

0.1

Drain Current, I

7
5

3

Tc=25°C

2

Single Pulse

10

0.01

-- W
D

23 57 23 57 23 57

1.0

35

30

25

20

15

Drain-to-Source Voltage, V

A S O

PW≤10µs

10µs

100µs

1ms

10ms

100ms

DC operation

*1. Shows chip capability
*2.

SANYO’s ideal heat dissipation condition

10 100

P

-- Tc

D

DS

-- V

IT10850

1000

0.5

Allowable Power Dissipation, P

0

0

20 40 60

Ambient Temperature, Ta -- °C

E

-- %

120

100

80

60

40

20

Avalanche Energy derating factor

0

0

25 50 75 100 125 150

Ambient Temperature, Ta -- °C

AS

80

100 120 140

-- Ta

IT03660

IT10478

160

175

10

5

Allowable Power Dissipation, P

0

0

20 40 60

Case Temperature, Tc -- °C

80

100 120 140

160

IT03659

No. A0359-4/5

2SK2625ALS

Note on usage : Since the 2SK2625ALS is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.

This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.

PS

No. A0359-5/5