Datasheet 2SK2624FS Datasheet (SANYO)

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Ordering number : ENA1320

2SK2624FS

SANYO Semiconductors

N-Channel Silicon MOSFET

DATA SHEET

2SK2624FS

General-Purpose Switching Device
Applications

Features

• Low ON-reisitance.

• Low Qg.

• Ultrahigh-speed switching.

Specifi cations

Absolute Maximum Ratings

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel Temperature Tch 150

Storage Temperature Tstg --55 to +150
Avalanche Energy (Single Pulse) *2 E
Avalanche Current *3 I

Note : *1 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.

2 VDD=50V, L=10mH, IAV=3A

*

3 L≤10mH, Single pulse

*

Marking : K2624

at Ta=25°C

DSS

GSS
D
DP

D

AS
AV

600 V
±30 V

3.5 A

PW≤10μs, duty cycle≤1% 12 A

2.0 W

Tc=25°C (SANYO’s ideal heat dissipation condition)*1

25 W

49 mJ

3A

°

°

C
C

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.

www.semiconductor-sanyo.com/network

O2208QB MS IM TC-00001659

No. A1320-1/5

2SK2624FS

Electrical Characteristics

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance | yfs | VDS=10V, ID=1.8A 1.0 2.0 S
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Diode Forward Voltage

at T a=25°C

Ratings

min typ max

(BR)DSSID

VDS=480V, VGS=0V 1.0 mA

DSS
GSS

RDS(on) ID=1.8A, VGS=15V 2.0 2.6
Ciss VDS=20V, f=1MHz 550 pF
Coss VDS=20V, f=1MHz 165 pF
Crss VDS=20V, f=1MHz 85 pF
td(on) See specifi ed Test Circuit. 17 ns
tr See specifi ed Test Circuit. 17 ns
td(off) See specifi ed Test Circuit. 40 ns
t

f

Qg VDS=200V, VGS=10V, ID=3A 15 nC
V

SD

=10mA, VGS=0V 600 V

VGS=±30V, VDS=0V ±100 nA

See specifi ed Test Circuit. 22 ns

IS=3A, VGS=0V 0.98 1.2 V

Package Dimensions

unit : mm (typ)
7528-001

10.16

3.18

4.7

2.54

Unit

Ω

15.8

3.23

1.47 MAX

3.3

0.8

123

15.8712.98

6.68

0.5

2.76

1 : Gate
2 : Drain
3 : Source

2.54 2.54

SANYO : TO-220F-3FS

Switching Time Test Circuit Avalanche Resistance Test Circuit

VDD=200V

PW=1μs
D.C.≤1%

VGS=15V

ID=1.8A

RL=111Ω

V

D

G

OUT

15V

0V

≥50Ω
RG

2SK2624FS

50Ω

L

V

DD

P.G

R

GS

50Ω

S

2SK2624FS

No. A1320-2/5

I

-- V

4.0

3.5

3.0

-- A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

0

24 810613 795

D

Drain-to-Source Voltage, VDS -- V

4.0

3.5

3.0

(on) -- Ω

RDS(on) -- V

DS

2.5

2.0

1.5

Static Drain-to-Source

On-State Resistance, R

1.0
0

82122014 16 186104

Gate-to-Source Voltage, VGS -- V

10

7
5

3
2

1.0
7

5

3
2

| yfs | -- I

Forward Transfer Admittance, | yfs | -- S

0.1

0.1

Drain Current, ID -- A

I

-- V

C

°

Tc=75

S

C

°

C

°

25

--25

100

7
5
3
2

10

7
5
3
2

-- A
S

1.0
7
5
3

2

0.1
7
5
3

2

Source Current, I

0.01
7
5
3

2

0.001
0 0.3 0.6 1.50.9 1.2

Diode Forward Voltage, VSD -- V

1.0

DS

SD

8V

VGS=6V

GS

ID=3.0A

D

75°C

257325

1.8A

1.0A

25°C

2SK2624FS

I

-- V

5.0

VDS=10V

15V

10V

7V

IT01020 IT01021

Tc=25°C

IT01022

VDS=10V

Tc= --25

°

C

73

10

IT01024

VGS=0V

IT01026

4.5

4.0

3.5

-- A
D

3.0

2.5

2.0

1.5

Drain Current, I

1.0

0.5
00

0

2 6 12 14 16 18108204

Gate-to-Source Voltage, VGS -- V

7.0

6.5

6.0

5.5

5.0

(on) -- Ω

4.5

DS

4.0

3.5

3.0

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5
0

--50

6

5

-- V

4

(off)

GS

3

2

Cutoff Voltage, V

1

0

--50 --25

100

7
5

3

td(on)

2

t

r

10

7
5

3

Switching Time, SW Time -- ns

2

1.0
57 325

D

RDS(on) -- Tc

Case Temperature, Tc -- °C

VGS(off) -- Tc

Case Temperature, Tc -- °C

SW Time -- I

1.0

Drain Current, I

GS

Tc= --25°C

25°C

75°C

=1.8A

D

=15V, I

=1.8A

D

=10V, I

GS

V

GS

V

50--25 15025 75 100 1250

50 100 1500 25 75 125

D

t

(off)

d

t

f

-- A

D

IT01023

VDS=10V
ID=1mA

IT01025

VDD=200V
VGS=15V

IT01027

No. A1320-3/5

2SK2624FS

Ciss, Coss, Crss -- pF

-- W
D

1000

100

2.5

2.0

1.5

1.0

Ciss, Coss, Crss -- V

D

Ciss

-- Ta

7
5

3
2

7
5

3
2

10

0

51015202530

Drain-to-Source Voltage, V

Coss

Crss

DS

DS

-- V

f=1MHz

IT01028

3
2

IDP=12A

10

7
5

ID=3.5A

3

-- A

2

D

1.0
7

5
3
2

0.1

Drain Current, I

7
5

3

Tc=25°C

2

Single pulse

0.01
23 57

0.1

30

25

-- W

Operation in
this area is
limited by RDS(on).

1.0

Drain-to-Source Voltage, V

A S O

23 57

P

D

PW≤10μs

1ms

10ms

DC operation

23257357

10 100

DS

-- TcP

100

100ms

-- V

10μs

μ

s

1000

IT14035

D

20

15

10

0.5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

E

-- Ta

AS

-- %

120

100

80

60

40

20

Avalanche Energy derating factor

0

0

25 50 75 100 125 150

Ambient Temperature, Ta -- °C

IT01031

IT10478

175

5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc -- °C

IT01030

No. A1320-4/5

2SK2624FS

Note on usage : Since the 2SK2624FS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.

This catalog provides information as of October, 2008. Specifi cations and information herein are subject
to change without notice.

No. A1320-5/5

PS