Datasheet 2SK2624ALS Datasheet (SANYO)

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Ordering number : ENA0362A

2SK2624ALS

SANYO Semiconductors

N-Channel Silicon MOSFET

DATA SHEET

2SK2624ALS

General-Purpose Switching Device
Applications

Features

• Low ON-resistance.

• Low Qg.

• Ultrahigh-speed switching.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 E
Avalanche Current *2 I

*1 VDD=50V, L=10mH, IAV=3A
*2 L≤10mH, single pulse

DSS
GSS

D

DP

D

AS

AV

PW≤10µs, duty cycle≤1% 12 A

Tc=25°C25W

600 V
±30 V

3.5 A

2.0 W

49 mJ

3A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V

Marking : K2624 Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the

'

customer
device, the customer should always evaluate and test devices mounted in the customer
equipment.

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

(BR)DSSID

DSS
GSS

=1mA, VGS=0V 600 V
VDS=600V, VGS=0V 1.0 mA
VGS=±30V , VDS=0V ±100 nA

min typ max

Ratings

'

s products or

Unit

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22107 TI IM TC-00000529 / 72006QB MS IM TC-00000028

No. A0362-1/5

2SK2624ALS

Continued from preceding page.

Parameter Symbol Conditions

Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 550 pF
Output Capacitance Coss VDS=20V , f=1MHz 165 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 85 pF
Total Gate Charge Qg VDS=200V, ID=3A, VGS=10V 15 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 40 ns
Fall Time t
Diode Forward Voltage V

yfs



RDS(on) ID=1.8A, VGS=15V 2.0 2.6 Ω

SD

VDS=10V, ID=1.8A 1.0 2.0 S



See specified Test Circuit. 17 ns

r

See specified Test Circuit. 22 ns

f

IS=3A, VGS=0V 0.98 1.2 V

min typ max

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7509-002

Ratings

VDD=200V

Unit

16.0

14.0

4.5

2.8

1.2

0.7

1 : Gate
2 : Drain

16.1

3.6

10.0

123

0.9

1.2

0.75

3.2

3.5

7.2

2.4

3 : Source

2.55

2.55

SANYO : TO-220FI(LS)

Avalanche Resistance Test Circuit

≥50Ω
RG

0.6

L

PW=1µs
D.C.≤0.5%

P.G

VGS=15V

R

GS

50Ω

ID=1.8A

RL=111Ω

V

D

G

S

OUT

2SK2624ALS

15V

0V

50Ω

2SK2624ALS

V

DD

No. A0362-2/5

I

-- V

4.0

3.5

3.0

-- A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

0

24 810613 795

D

Drain-to-Source Voltage, VDS -- V

4.0

3.5

3.0

(on) -- Ω

RDS(on) -- V

DS

2.5

2.0

1.5

Static Drain-to-Source

On-State Resistance, R

1.0
0

82122014 16 186104

Gate-to-Source Voltage, VGS -- V



y

10

7
5

3
2

1.0
7

5

3
2

fs -- I

Forward Transfer Admittance, yfs -- S

0.1

0.1

Drain Current, ID -- A

I

-- V

C

°

Tc=75

S

C

°

C

°

25

--25

100

7
5
3
2

10

7
5
3
2

-- A
S

1.0
7
5
3

2

0.1
7
5
3

2

Source Current, I

0.01
7
5
3

2

0.001

00.30.61.50.9 1.2

Diode Forward Voltage, VSD -- V

1.0

DS

SD

8V

VGS=6V

GS

ID=3.0A

D

75°C

257325

1.8A

1.0A

25°C

2SK2624ALS

I

-- V

5.0

VDS=10V

15V

10V

7V

IT01020 IT01021

Tc=25°C

IT01022

VDS=10V

Tc= --25

°

C

73

10

IT01024

VGS=0V

IT01026

4.5

4.0

3.5

-- A
D

3.0

2.5

2.0

1.5

Drain Current, I

1.0

0.5
00

0

26 1214 16 18108204

Drain-to-Source Voltage, VDS -- V

7.0

6.5

6.0

5.5

5.0

(on) -- Ω

4.5

DS

4.0

3.5

3.0

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5
0

--5 0

6

5

-- V

4

(off)

GS

3

2

Cutoff Voltage, V

1

0

--5 0 --2 5

100

7
5

3

td(on)

2

t

r

10

7
5

3

Switching Time, SW Time -- ns

2

1.0
57 325

D

RDS(on) -- Tc

Case Temperature, Tc -- °C

VGS(off) -- Tc

Case Temperature, Tc -- °C

SW Time -- I

1.0

Drain Current, I

GS

Tc= --25°C

25°C

75°C

=10V

GS

=1.8A, V

I

D

=1.8A, V

I

D

50--2 5 15025 75 100 1250

50 100 150025 75 125

GS

=15V

D

t

(off)

d

t

f

-- A

D

IT01023

VDS=10V
ID=1mA

IT01025

VDD=200V
VGS=15V

IT01027

No. A0362-3/5

2SK2624ALS

Ciss, Coss, Crss -- pF

-- W
D

1000

100

2.5

2.0

1.5

1.0

Ciss, Coss, Crss -- V

D

Ciss

-- Ta

7
5

3
2

7
5

3
2

10

51015202530

0

Drain-to-Source Voltage, V

Coss

Crss

DS

DS

-- V

f=1MHz

IT01028

100

7
5

3
2

IDP=12A

10

7

ID=3.5A

-- A

5
3

D

2

1.0
7
5

Operation in

3

this area is

2

Drain Current, I

-- W

limited by RDS(on).

0.1
7
5
3

Tc=25°C

2

Single Pulse

0.01
23 571023 57

1.0

30

25

Drain-to-Source Voltage, V

A S O

DC operation

P

-- TcP

D

10ms

100ms

100

1ms

DS

-- V

PW≤10µs

10µs

100

µ

s

23 57

IT10851

1000

D

20

15

10

0.5

Allowable Power Dissipation, P

0

020406080100 120 140 160

Ambient Temperature, Ta -- °C

E

-- Ta

AS

-- %

120

100

80

60

40

20

Avalanche Energy derating factor

0

0

25 50 75 100 125 150

Ambient Temperature, Ta -- °C

IT01031

IT10478

175

5

Allowable Power Dissipation, P

0

020406080100 120 140 160

Case Temperature, Tc -- °C

IT01030

No. A0362-4/5

2SK2624ALS

Note on usage : Since the 2SK2624ALS is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.

This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.

PS

No. A0362-5/5