Datasheet 2SK2623 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6148A

2SK2623

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Low Qg.

Package Dimensions

unit:mm

2083B

[2SK2623]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

2.3

1.5

5.5

1.6

0.5

7.0

1.2

7.5

0.5

2092B

[2SK2623]

6.5

5.0

1.55.5

2.3

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2

0 to 0.2

81000TS (KOTO) TA-2287 No.6148–1/4

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA

2SK2623

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

egrahCetaGlatoTgQVSDV,V002=

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

Marking : K2623

SSD
SSG

D

PD

D

Tc=25˚C

I

V,Am1=

SSD)RB(

D

V

SSD
SSG

r

f

DS

SD

V

SG

V

)ffo(SG

SD

V

)no(SD

SG
SD
SD
SD

)no(d

)ffo(d

I

S

0=006V

SG

V,V006=

0=0.1Am

SG

V,V03±=

0=001±An

SD

I,V01=

Am1=5.35.5V

D

A8.0=5.00.1S

D

I,V51=

A8.0=2.45.5

D

zHM1=f,V02=003Fp
zHM1=f,V02=09Fp
zHM1=f,V02=54Fp

I,V01=

SG

D

tiucriCtseTdeificepseeS9sn
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS71sn

V,A5.1=

0=8.02.1V

SG

006V
03±V

5.1A
6A

0.1W
03W

sgnitaR

nimpytxam

A5.1=8Cn

˚C
˚C

tinU

Ω

Switching Time Test Circuit

PW=1µs
D.C.≤0.5%

15V

0V

P.G

V

IN

V

IN

G

R

GS

50Ω

VDD=200V

D

S

ID=0.8A
RL=250Ω

2SK2623

V

OUT

No.6148–2/4

4.0

3.5

3.0

–A

2.5

D

2.0

ID-

2SK2623

V

DS

3.0

VDS=10V

15V

10V

8V

2.5

–A

2.0

D

1.5

ID-

V

GS

Tc=

-

25°C

°C

25

75

°C

1.5

Drain Current, I

1.0

0.5

0

0 1020304050

10

7
5

fs|–S

y

3
2

1.0
7
5

3
2

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

D

°C

25

-

Tc=

75°C

25°C

7V

VGS=6V

VDS=10V

Forward Transfer Admittance, |

0.1

0.1

11
10

9
8

– Ω

7

DS(on)

6
5
4
3
2
1

Static Drain-to-Source

On-State Resistance, R

0

-50 -25 0 25 75 100 125 15050

23

Drain Current, ID–A

R

DS(on)

75235

1.0

-

Tc

=10V

GS

=15V

=0.8A,V

D

GS

=0.8A,V

D

I

I

Case Temperature, Tc – ˚C Case Temperature, Tc – ˚C

1000

100

Switching Time, SW Time – ns

1.0

SW Time

7
5

3
2

7
5

3
2

10

7
5

3
2

t

f

t

(off)

d

t

r

td(on)

23 57 2375

-

I

D

VDD=200V

VGS=15V

1.00.1

Drain Current, ID–A

1.0

Drain Current, I

0.5

0

0 5 10 2015

10

9

8

– Ω

7

6

DS(on)

5

4

3

2

1

Static Drain-to-Source

On-State Resistance, R

0

02468 2014 16 181210

Gate-to-Source Voltage, VGS–V

I

D

R

=1.5A

DS(on)

-

V

GS

0.8A

0.5A

Gate-to-Source Voltage, VGS–V

V

7

6

–V

5

4

GS(off)

3

2

Cutoff Voltage, V

1

0

-50 0 100 15050

2

VGS=0

10

7
5

3
2

1.0

–A

7

F

5
3

2

0.1
7
5

3
2

Forward Current, I

0.01
7
5

3
2

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

GS(off)

IF-

Tc=75°C

-

Tc

V

SD

C

°C

°

25

25

-

Diode Forward Voltage, VSD–V

Tc=25°C

VDS=10V

VDS=10V
VGS=10V

ID=1mV

No.6148–3/4

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss – pF

3
2

10

0 5 10 15 20 25 30

Ciss,Coss,Crss

-

V

DS

f=1MHz

Ciss

Coss

Crss

Drain-to-Source Voltage, VDS–V

-

1.2

1.0

–W

D

0.8

P

D

Ta

2SK2623

–A

D

,I

Drain Current

0.01

–W

D

10

IDP=6A

7
5

3
2

1.0
7
5

3
2

Operation in this area

0.1

is limited by RDS(on).

7
5

3
2

Tc=25°C
Single pulse

Drain-to-Source Voltage, VDS–V

32
30
28

24

20

A S O

ID=1.5A

DC operation

23 57

101.0 100

-

P

D

Tc

10ms

1ms

100

23 5723 57

10µs

µs

1000

0.6

0.4

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 120100 140 160

16

12

8

4

Allowable Power Dissipation, P

0

0 20 40 60 80 120100 140 160

Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.

PS No.6148–4/4